Insulated Gate Bipolar Transistor (Trench IGBT), 65 V, A VS-GTDA65U SOT-7 PRIMARY CHARACTERISTICS V CES 65 V I C DC A at 9 C V CE(on) typical at A, 5 C.7 V I F DC 76 A at 9 C Speed 8 khz to 3 khz Package SOT-7 Circuit configuration Single switch with AP diode FEATURES Trench IGBT technology with positive temperature coefficient Square RBSOA FRED Pt antiparallel diodes with ultrasoft reverse recovery Fully isolated package Very low internal inductance ( 5 nh typical) Industry standard outline UL pending Material categorization: for definitions of compliance please see www.vishay.com/doc?999 BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-7 packages Lower conduction losses and switching losses Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 65 V T C = 5 C 67 Continuous collector current I C T C = 9 C Pulsed collector current I CM Clamped inductive load current I LM A T C = 5 C Diode continuous forward current I F T C = 9 C 76 Single pulse forward current I FSM ms sine or 6 ms rectangular pulse, 55 A Gate-to-emitter voltage V GE ± V T C = 5 C 577 Power dissipation, IGBT P D T C = 9 C 37 T C = 5 C 38 Power dissipation, diode P D T C = 9 C 35 W Isolation voltage V ISOL Any terminal to case, t = min 5 V Revision: 3-Oct-7 Document Number: 95737 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GTDA65U ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = μa 65 - - Collector to emitter voltage V CE(on) V GE = 5 V, I C = A, -. - V V GE = 5 V, I C = A -.7. V GE = 5 V, I C = A, T J = 75 C -.7 - Gate threshold voltage V GE(th) V CE = V GE, I C = 3.3 ma 5. 6. 8.3 Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = ma (5 C to 5 C) - - - mv/ C V GE = V, V CE = 65 V -. 5 μa Collector to emitter leakage current I CES V GE = V, V CE = 65 V, - 8 - V GE = V, V CE = 65 V, T J = 75 C -. - ma Forward voltage drop, diode V FM I C = A, V GE = V, -.69 - V I C = A, V GE = V -..53 I C = A, V GE = V, T J = 75 C -.55 - Gate to emitter leakage current I GES V GE = ± V - - ± 66 na SWITCHING CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Input capacitance C iss - 66 - Output capacitance C oss V GE = V, V CE = 3 V, f =. MHz - 34 - pf Reverse transfer capacitance C rss - 8 - Total gate charge (turn-on) Q g - 9 - Gate to emitter charge (turn-on) Q ge I C = A, V CC = 4 V, V GE = 5 V - 65 - nc Gate to collector charge (turn-on) Q gc - 8 - Turn-on switching loss E on -.3 - Turn-off switching loss E off -.5 - mj Total switching loss E tot I C = A, V CC = 35 V, -.8 - Turn-on delay time t d(on) V GE = 5 V, R g = 4.7-4 - Rise time t L = 5 μh r - 73 - ns Turn-off delay time t d(off) - 7 - Energy losses Fall time t f include tail and - 68 - Turn-on switching loss E on diode -.5 - recovery. Turn-off switching loss E off -.85 - mj Total switching loss E tot I = A, V = 35 V, C CC -.37 - Turn-on delay time t d(on) V GE = 5 V, R g = 4.7-5 - Rise time t r L = 5 μh, - 74 - Turn-off delay time t d(off) - 4 - ns Fall time t f - 89 - Reverse bias safe operating area RBSOA T J = 75 C, I C = A, R g = V GE = 5 V to V, V CC = 35 V, Fullsquare V P = 65 V, L = 5 μh Short circuit safe operating area SCSOA V GE = 5 V, V CC = 4 V, R g = 4.7 V P 65 V, T J = 5 C - - 5.5 μs Diode reverse recovery time t rr - 7 - ns Diode peak reverse current I rr I F = 5 A, di F /dt = A/μs, V R = V - 5.3 - A Diode recovery charge Q rr - 9 - nc Diode reverse recovery time t rr - 49 - ns Diode peak reverse current I rr I F = 5 A, di F /dt = A/μs, V R = V, - 3 - A Diode recovery charge Q rr - 974 - nc Revision: 3-Oct-7 Document Number: 95737 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GTDA65U THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T J, T Stg -4-75 C Junction to case IGBT - -.6 R thjc Diode - -.63 C/W Case to heatsink R thcs Flat, greased surface -. - Weight - 3 - g Mounting torque Torque to terminal - -. (9.7) Nm (lbf.in) Torque to heatsink - -.8 (5.9) Nm (lbf.in) Case style SOT-7 4 8 6 4 8 6 4 T J = 75 C.5..5..5 3. 3.5 4. Allowable Case Temperature ( C) 8 6 4 8 6 4 DC 4 6 8 4 6 8 V CE (V) I C - Continuous Collector Current (A) Fig. - Typical IGBT Output Characteristics, V GE = 5 V Fig. 3 - Maximum IGBT Continuous Collector Current vs. Case Temperature 4 8 6 4 8 6 4 V GE = V V GE = 5 V V GE = 8 V V GE = 9 V.5..5..5 3. 3.5 4. V CE (V).4. A..8.6 5 A.4. A..8.6 4 6 8 4 6 8 V CE (V) T J ( C) Fig. - Typical IGBT Output Characteristics, Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature Revision: 3-Oct-7 3 Document Number: 95737 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GTDA65U www.vishay.com 9 V CE = V T J = 75 C 8 7 6 5 4 I CES (ma).. 3. 5 6 7 8 9. 3 4 5 6 7 V GE (V) V CES (V) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current V GEth (V) 7. 6.5 6. 5.5 5. 4.5 4. 3.5 3..5.5..5..5 3. 3.5 I F (A) 4 8 6 4 8 6 4 T J = 75 C.5..5..5 3. I C (ma) V FM (V) Fig. 6 - Typical IGBT Gate Threshold Voltage Fig. 9 - Typical Diode Forward Characteristics 8 Allowable Case Temperature ( C) 6 4 8 6 4 DC 4 6 8 4 V CE (V) I F - Continuous Forward Current (A) Fig. 7 - IGBT Reverse BIAS SOA T J = 75 C, V GE = 5 V Fig. - Maximum Diode Continuous Forward Current vs. Case Temperature Revision: 3-Oct-7 4 Document Number: 95737 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GTDA65U 3.5 t d(on) t d(off) Energy (mj).5.5 Eoff Eon Switching Time (ns) t r t f 4 6 8 4 5 5 5 3 35 4 45 5 R g (Ω) Fig. - Typical IGBT Energy Loss vs. I C, V CC = 35 V, R g = 4.7, V GE = 5 V, L = 5 μh Fig. 4 - Typical IGBT Switching Time vs. R g, V CC = 6 V, I C = A, V GE = 5 V, L = 5 μh 8 6 4 Switching Time (ns) t d(off) t d(on) t f t r t rr (ns) 8 6 4 4 6 8 4 3 4 5 di F /dt (A/μs) Fig. - Typical IGBT Switching Time vs. I C, V CC = 35 V, R g = 4.7, V GE = 5 V, L = 5 μh Fig. 5 - Typical t rr Diode vs. di F /dt V rr = V, I F = 5 A Energy (mj) 7 6 5 4 3 Eon Eoff 5 5 5 3 35 4 45 5 I rr (A) 4 8 6 4 8 6 T 4 J = 5 C 3 4 5 R g (Ω) di F /dt (A/μs) Fig. 3 - Typical IGBT Energy Loss vs. R g, V CC = 35 V, I C = A, V GE = 5 V, L = 5 μh Fig. 6 - Typical I rr Diode vs. di F /dt V rr = V, I F = 5 A Revision: 3-Oct-7 5 Document Number: 95737 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GTDA65U 6 4 Q rr (nc) 8 6 4 3 4 5 di F /dt (A/μs) Fig. 7 - Typical Diode Reverse Recovery Charge vs. di F /dt V rr = V, I F = 5 A Z thjc - Thermal Impedance Junction to Case ( C/W)..5....5.. DC...... t - Rectangular Pulse Duration (s) Fig. 8 - Maximum Thermal Impedance Z thjc Characteristics, IGBT Z thjc - Thermal Impedance Junction to Case ( C/W)...5...5.. DC...... t - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance Z thjc Characteristics, Diode Revision: 3-Oct-7 6 Document Number: 95737 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GTDA65U ORDERING INFORMATION TABLE Device code VS- G T D A 65 U 3 4 5 6 7 8 3 4 5 6 7 8 - product - Insulated gate bipolar transistor (IGBT) - T = trench IGBT - Current rating ( = A) - Circuit configuration (D = single switch with antiparallel diode) - Package indicator (A = SOT-7) - Voltage rating (65 = 65 V) - Speed/type (U = ultrafast IGBT) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Lead Assignment 4 3 Single switch with AP diode D (G), 4 (E) Dimensions Packaging information LINKS TO RELATED DOCUMENTS www.vishay.com/doc?9543 www.vishay.com/doc?9545 Revision: 3-Oct-7 7 Document Number: 95737 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Outline Dimensions SOT-7 Generation II DIMENSIONS in millimeters (inches) Ø 4. (.6) Ø 4.3 (.69) 38.3 (.58) 37.8 (.488) -A- 4 x M4 nuts.5 (.49) 3. (.5) 6.5 (.46) 6.5 (.56) 5.7 (.) 4.7 (.97) -B- 7.45 (.93) 7.6 (.99) 3.5 (.) 9.8 (.73) 4.9 (.587) 5. (.598) R full. (.83). (.87) 3.5 (.4) 3. (.64) 8.3 (.37) 4 x 7.7 (.33).5 (.) M C A M B M. (.87).9 (.75) 4. (.6) 4.5 (.77) -C-.3 (.5).3 (.484).7 (.46) 5. (.984) 5.5 (.4) Note Controlling dimension: millimeter Revision: -Aug- Document Number: 9543 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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