Benefits l Ultra-Low Gate Impedance l l Very Low R DS(on) Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power l Lead-Free IRF3704PbF IRF3704SPbF IRF3704LPbF HEXFET Power MOSFET V DSS R DS(on) max I D 20V 9.0mΩ 77A TO-220AB IRF3704 Symbol Parameter Max. Units V DS Drain-Source Voltage 20 V V GS Gate-to-Source Voltage ± 20 V I D @ T C = 25 C Continuous Drain Current, V GS @ V 77 I D @ T C = 70 C Continuous Drain Current, V GS @ V 64 A I DM Pulsed Drain Current 308 P D @T C = 25 C Maximum Power Dissipationƒ 87 W P D @T C = 70 C Maximum Power Dissipationƒ 61 W Linear Derating Factor 0.59 mw/ C T J, T STG Junction and Storage Temperature Range -55 to + 175 C * When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994 D 2 Pak IRF3704S PD - 95527 TO-262 IRF3704L Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 1.73 R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θja Junction-to-Ambient 62 R θja Junction-to-Ambient (PCB mount)* 40 Notes through are on page www.irf.com 1 7/20/04
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 20 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient 0.021 V/ C Reference to 25 C, I D = 1mA 6.3 9.0 V GS = V, I D = 15A ƒ R DS(on) Static Drain-to-Source On-Resistance mω 9.8 13.5 V GS = 4.5V, I D = 12A ƒ V GS(th) Gate Threshold Voltage 1.0 3.0 V V DS = V GS, I D = 250µA 20 V µa DS = 16V, V GS = 0V I DSS Drain-to-Source Leakage Current 0 V DS = 16V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage 200 V GS = 16V na Gate-to-Source Reverse Leakage -200 V GS = -16V Dynamic @ T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 42 S V DS = V, I D = 57A Q g Total Gate Charge 19 I D = 28.4A Q gs Gate-to-Source Charge 8.1 nc V DS = V Q gd Gate-to-Drain ("Miller") Charge 6.4 V GS = 4.5V ƒ Q oss Output Gate Charge 16 24 V GS = 0V, V DS = V t d(on) Turn-On Delay Time 8.4 V DD = V t r Rise Time 98 I ns D = 28.4A t d(off) Turn-Off Delay Time 12 R G = 1.8Ω t f Fall Time 5.0 V GS = 4.5V ƒ C iss Input Capacitance 1996 V GS = 0V C oss Output Capacitance 85 V DS = V C rss Reverse Transfer Capacitance 155 pf ƒ = 1.0MHz Avalanche Characteristics Symbol Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 216 mj I AR Avalanche Current 71 A Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol (Body Diode) 77 showing the A I G SM Pulsed Source Current integral reverse 308 (Body Diode) p-n junction diode. S 0.88 1.3 V T V SD Diode Forward Voltage J = 25 C, I S = 35.5A, V GS = 0V ƒ 0.82 T J = 125 C, I S = 35.5A, V GS = 0V ƒ t rr Reverse Recovery Time 38 57 ns T J = 25 C, I F = 35.5A, V R =20V Q rr Reverse Recovery Charge 45 68 nc di/dt = 0A/µs ƒ t rr Reverse Recovery Time 41 62 ns T J = 125 C, I F = 35.5A, V R =20V Q rr Reverse Recovery Charge 50 75 nc di/dt = 0A/µs ƒ 2 www.irf.com
I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRF3704/S/LPbF 00 0 VGS TOP.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V 00 0 VGS TOP.0V 9.00V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V 3.5V 3.5V 20µs PULSE WIDTH Tj = 25 C 1 0.1 1 0 V DS, Drain-to-Source Voltage (V) 1 20µs PULSE WIDTH Tj = 175 C 0.1 1 0 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 00 0 T J = 25 C T J = 175 C V DS= 15V 20µs PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0 V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = 77A 1.5 1.0 0.5 V GS = V 0.0-60 -40-20 0 20 40 60 80 0 120 140 160 180 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3
C, Capacitance (pf) 3000 2500 2000 1500 00 500 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTED V GS, Gate-to-Source Voltage (V) 8 6 4 2 I = D 28.4A V DS = V C rss 0 1 0 V DS, Drain-to-Source Voltage (V) 0 0 20 30 40 Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) 00 0 1 T J = 175 C T J = 25 C V GS = 0 V 0.1 0.2 0.5 0.8 1.1 1.4 1.7 2.0 V SD,Source-to-Drain Voltage (V) I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us 1ms ms TC = 25 C TJ = 175 C Single Pulse 1 0.1 1 0 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com
90 75 LIMITED BY PACKAGE R G V GS V DS R D D.U.T. I D, Drain Current (A) 60 45 30 V Pulse Width 1 µs Duty Factor 0.1 % Fig a. Switching Time Test Circuit 15 V DS 90% + - V DD 0 25 50 75 0 125 150 175 T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) 1 0.1 D = 0.50 0.20 0. 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thjc + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t 1, Rectangular Pulse Duration (sec) PDM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5
R DS ( on ), Drain-to-Source On Resistance ( Ω ) R DS(on), Drain-to -Source On Resistance (Ω) IRF3704/S/LPbF 0.020 0.0 0.015 VGS = 4.5V 0.009 0.008 I D = 35.5A 0.0 VGS = V 0.007 0.005 0 50 0 150 200 250 300 I D, Drain Current ( A ) 0.006 4.0 5.0 6.0 7.0 8.0 9.0.0 V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. 12V I AS V GS.2µF 50KΩ 3mA tp.3µf D.U.T. I G I D Current Sampling Resistors V(BR)DSS + V - DS V GS R G V DS 20V V G tp Q GS L D.U.T I AS 0.01Ω Q G Q GD Charge Fig 14a&b. Basic Gate Charge Test circuit and Waveforms 15V DRIVER + - V DD A E AS, Single Pulse Avalanche Energy (mj) 600 500 400 300 200 0 I D TOP 11.6A 23.8A BOTTOM 28.4A 0 25 50 75 0 125 150 175 Starting T, Junction Temperature ( J C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6 www.irf.com
TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.3).54 (.415).29 (.405) 3.78 (.149) 3.54 (.139) - A - 4.69 (.185) 4.20 (.165) - B - 1.32 (.052) 1.22 (.048) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 1 2 3 4 6.47 (.255) 6. (.240) 1.15 (.045) MIN 4.06 (.160) 3.55 (.140) LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 1- GATE 2 - DRAIN 1- GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 4 - DRAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X 1.40 (.055) 1.15 (.045) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.4) 2.54 (.0) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF LOT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INTE RNAT IONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C www.irf.com 7
D 2 Pak Package Outline Dimensions are shown in millimeters (inches) D 2 Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" N ote: "P " in as s embly line pos ition indicates "L ead-f ree" OR INT E R NAT IONAL RECTIFIER LOGO AS S E MB L Y LOT CODE F530S PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 02 LINE L IN T E R N AT ION AL RECTIFIER LOGO AS S E MB L Y LOT CODE F 530S PART NUMBER DATE CODE P = DES IGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE 8 www.irf.com
TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL33L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" OR INTERNATIONAL RECTIFIER LOGO AS S E MBL Y LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE P = DES IGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = ASSEMBLY SITE CODE www.irf.com 9
D 2 Pak Tape & Reel Infomation TRR 1.60 (.063) 1.50 (.059) 4. (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065).90 (.429).70 (.421) 11.60 (.457) 11.40 (.449) 16. (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.5 mh R G = 25Ω, I AS = 28.4 A. ƒ Pulse width 300µs; duty cycle 2%. This is only applied to TO-220AB package Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information.07/04 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/