Features OBSOLETE. = +25 C, 50 Ohm system, Vdd = +5V. Parameter Frequency Min. Typ. Max. Units GHz

Similar documents
Features. = +25 C, 50 Ohm system

v3.99 Attenuation vs. Frequency over Vctrl V -1.6 V -.6 V. V Attenuation vs. Vctrl1 Over 1 GHz, Vctrl2

Gain Control Range db

HMC694LP4 / 694LP4E. Variable gain amplifiers - ANALOG - smt. GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6-17 GHz. Typical Applications

Parameter Min. Typ. Max. Units Frequency Range GHz

HMC1040LP3CE. Amplifiers - Low Noise - smt. GaAs phemt MMIC LOW NOISE AMPLIFIER, GHz. Features. Typical Applications. General Description

Features. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz GHz. Attenuation Range GHz 15.

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]

Features OBSOLETE. = +25 C, Vcc= 5V [1]

Features OBSOLETE. Parameter Min. Typ. Max. Units. Frequency Range GHz Insertion Loss 5 7 db. Input Return Loss 16 db

OBSOLETE. = +25 C, With Vdd = +5V & Vctl = 0/+5V. Parameter Frequency Min. Typ. Max. Units DC - 4 GHz GHz Attenuation Range DC - 10 GHz 10 db

HMC695LP4 / HMC695LP4E

OBSOLETE. = +25 C, Vdd = Vs= +5V, Vctl= 0/ +5V. Parameter Frequency Min. Typ. Max. Units DC GHz 37. db Gain (Maximum Gain State)

OBSOLETE HMC881LP5E FILTERS - TUNABLE - SMT. FILTER - TUNABLE, LOW PASS SMT GHz. Typical Applications. General Description. Functional Diagram

HMC1013LP4E. SDLVAs - SMT. SUCCESSIVE DETECTION LOG VIDEO AMPLIFIER (SDLVA), GHz

HMC948LP3E POWER DETECTORS - SMT. 54 db, LOGARITHMIC DETECTOR, 1-23 GHz. Typical Applications. Features. Functional Diagram. General Description

= +25 C, With Vee = -5V & VCTL= 0/-5V

Features. = +25 C, Vcc= 5V

OBSOLETE HMC915LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram. General Description

Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter

HMC997LC4. Variable Gain Amplifier - SMT. VARIABLE GAIN AMPLIFIER GHz. Typical Applications. General Description. Functional Diagram

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. Output Power: 2 dbm Typical Spurious Suppression: >20 dbc SSB Phase Noise: khz Offset Test Instrumentation

Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC GHz 31.5 db

OBSOLETE HMC894LP5E FILTERS - TUNABLE - SMT. FILTER - TUNABLE, BAND PASS SMT GHz. Typical Applications. General Description

HMC486LP5 / 486LP5E LINEAR & POWER AMPLIFIERS - SMT. SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 7-9 GHz. Typical Applications.

HMC368LP4 / 368LP4E FREQ. MULTIPLIERS - ACTIVE - SMT. SMT GaAs PHEMT MMIC AMP-DOUBLER-AMP, 9-16 GHz OUTPUT. Typical Applications.

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 70 ma

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 45 ma

Features. = +25 C, Vdd= 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz

Features. Output Power for 1 db Compression (P1dB) dbm Saturated Output Power (Psat) dbm

Parameter Min. Typ. Max. Units

= +25 C, Vdd = Vs= P/S= +5V

Features OBSOLETE. Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) dbm Supply Current (Idd) ma

Features. = +25 C, Vdd = +5V, Idd = 400mA [1]

Features. = +25 C, Vdd= +12V, Vgg2= +5V, Idd= 400 ma*

Features. = +25 C, 50 Ohm system

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation

= +25 C, 50 Ohm System, Vdd = +5V

= +25 C, Vdd = Vs= P/S= +5V

Features. = +25 C, Vcc = +5V. Parameter Min. Typ. Max. Units Fo Fo/2 RFOUT RFOUT/2

Features. = +25 C, Vcc1, Vcc2 = +5V. Parameter Min. Typ. Max. Units Fo Fo/2 RFOUT RFOUT/2 RFOUT/4

SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER,

Features db

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

HMC662LP3E POWER DETECTORS - SMT. 54 db, LOGARITHMIC DETECTOR, 8-30 GHz. Typical Applications. Features. Functional Diagram. General Description

HMC540SLP3E v db LSB SILICON MMIC 4-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, GHz

HMC618ALP3E AMPLIFIERS - LOW NOISE - SMT. GaAs SMT phemt LOW NOISE AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

OBSOLETE. Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz. Attenuation Range DC - 3 GHz 31 db

Features. Parameter Frequency Min. Typ. Max. Units. Return Loss Off State DC - 20 GHz 13 db

Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC GHz 31.5 db

Features OBSOLETE. = +25 C, Vcc1 = Vcc2 = +5V

Features +3V +5V GHz

Features. = +25 C, Vdd = +5V, Rbias = 10 Ohms*

Features. = +25 C, 50 Ohm System, Vcc= +5V

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vdd = +5V, 5 dbm Drive Level

HMC849ALP4CE SWITCHES - SPDT - SMT. HIGH ISOLATION SPDT NON-REFLECTIVE SWITCH, DC - 6 GHz. Typical Applications. Features. Functional Diagram

Features. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vdd = +7V, Idd = 1340 ma [1]

Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz GHz Attenuation Range DC - 5.

OBSOLETE. Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC - 5.

HMC659LC5 LINEAR & POWER AMPLIFIERS - SMT. GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz. Features. Typical Applications. General Description

HMC662LP3E POWER DETECTORS - SMT. 54 db, LOGARITHMIC DETECTOR, 8-30 GHz. Typical Applications. Features. Functional Diagram. General Description

Features

HMC349LP4C / 349LP4CE

Features. = +25 C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V. Parameter Min. Typ. Max. Units Fo Fo/2 RFOUT RFOUT/2 RFOUT/4

Features. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units

Features. = +25 C, Vdd= 8V, Idd= 75 ma*

HMC468LP3 / 468LP3E v

Features OBSOLETE. = +25 C, With 0/+5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units

OBSOLETE. Output Power for 1 db Compression dbm Output Third Order Intercept Point (Two-Tone Output Power= 12 dbm Each Tone)

Features. = +25 C, IF= 100 MHz, LO= +15 dbm* Parameter Min. Typ. Max. Min. Typ. Max. Units

= +25 C, Vcc = +3.3V, Z o = 50Ω (Continued)

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

HMC1095LP4E v db LSB GaAs MMIC 6-BIT 75 Ohms DIGITAL ATTENUATOR, DC - 3 GHz. Typical Applications. Functional Diagram. General Description

Features. = +25 C, Vdd= +3V. Parameter Min. Typ. Max. Units Frequency Range GHz Gain db

Features. = +25 C, Vs = +5V. Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range MHz Gain

Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V

Features. = +25 C, With Vdd = Vdd1 = +5V, Vss = -5V. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz

Features. = +25 C, Vss= -5V, Vdd= +5V, Control Voltage= 0/ +5V, 50 Ohm System. Frequency Range GHz Insertion Loss* 4 6.

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

= +25 C, with Vcc = +5V. Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC GHz 31.

TEL: FAX: HMC3LP / 3LPE v.21 SMT GaAs HBT MMIC x ACTIVE FREQUENCY MULTIPLIER, GHz OUTPUT Evalua

Features. = +25 C, IF = 200 MHz, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V*

DC GHz GHz

Features. Upconversion & Downconversion Applications MIXERS - SINGLE & DOUBLE BALANCED - SMT

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

= +25 C, IF = 2350 MHz, LO = +4 dbm, VDLO1, 2 = +3V, IDLO = 150 ma, VDRF = +3V, IDRF = 200mA, USB [1][2] Parameter Min. Typ. Max.

HMC478SC70 / 478SC70E v

HMC913LC4B. SDLVAs - SMT. SUCCESSIVE DETECTION LOG VIDEO AMPLIFIER (SDLVA), GHz

Features. Parameter Frequency Min. Typ. Max. Units Insertion Loss DC GHz db

Features. = +25 C, Vcc = +5V. Parameter Min. Typ. Max. Units Fo Fo/2 RFOUT RFOUT/2

Features. Upconversion & Downconversion Applications MIXERS - SINGLE & DOUBLE BALANCED - SMT

Features. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz GHz. Attenuation Range GHz 15.

HMC596LP4 / HMC596LP4E

HMC639ST89 / 639ST89E

Transcription:

Typical Applications v.91 ATTENUATOR,.5-6. GHz Features The is ideal for: Point-to-Point Radio Cellular/3G & WiMAX/4G Infrastructure Test Instrumentation Microwave Sensors Military, ECM & Radar Functional Diagram Excellent Linearity: +35 dbm Input IP3 Wide Attenuation Range: 26 db Single Positive Voltage Control: to +5V Absorptive Topology 16 Lead 3x3mm SMT Package: 9mm² General Description Electrical Specifications, T A = +25 C, 5 Ohm system, Vdd = +5V Insertion Loss Attenuation Range The is an absorptive Voltage Variable Attenuator (VVA) which operates from.5 to 6 GHz and is ideal in designs where an analog DC control signal must be used to control RF signal levels over a 26 db amplitude range. It features a shunt-type attenuator controlled by an analog voltage, Vctrl. Unlike other GaAs FET based VVA s the exhibits excellent linearity of +35 dbm input IP3, throughout it s control range. The is an unidirectional device with optimum linearity performance achieved when the RF input signal is applied to the RFIN package lead. The is housed in a RoHS compliant 3x3 mm QFN leadless package. Parameter Frequency Min. Typ. Max. Units.5-4. GHz 3.5 5 db 4. - 6. GHz 5.5 db.5-3. GHz 3. - 6. GHz Input Return Loss.5-6. GHz 12 db Output Return Loss.5-6. GHz 1 db Input Power for 1 db Compression (any attenuation).5-6. GHz 3 dbm Input Third Order Intercept (Two-tone Input Power = +5 dbm Each Tone).5-6. GHz 26 2 db 35 dbm Supply Current (Idd).5-6. GHz 2 3 µa - 1 For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, 2 Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 124Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 97-3343 Fax: 97-3373 Phone: Order 71-329-47 On-line at www.hittite.com Application Support: Phone: 97-3343 Application or apps@hittite.com Support: Phone: 1--ANALOG-D

Insertion Loss vs. Frequency Over Temperature INSERTION LOSS (db) -4 C Vctrl Over Temperature @.5 GHz Vctrl Over Temperature @ 4 GHz v.91 1 2 3 4 5 6 7-2 -3-4 C 1 2 3 4 5-2 -3-4 C ATTENUATOR,.5-6. GHz Frequency Over Vctrl -2-3. V 1. V -4 1.6 V 2. V 2.6 V 3.4 V 2 4 6 Vctrl Over Temperature @ 2 GHz -2-3 -4 C 1 2 3 4 5 Vctrl Over Temperature @ 6 GHz -2-3 -4 C 1 2 3 4 5-4 1 2 3 4 5 For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, 2 Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 124Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 97-3343 Fax: 97-3373 Phone: Order 71-329-47 On-line at www.hittite.com Application Support: Phone: 97-3343 Application or apps@hittite.com Support: Phone: 1--ANALOG-D - 2

-2-4 C v.91 Input Return Loss Over Temperature (Vctrl = ) IP3 (dbm) -2-3 2 4 6 6 5 4 3 2-4 C -3 2 4 6 Output Return Loss Over Temperature (Vctrl = ). V 1. V 1.6 V 2. V 2.6 V 3.4 V ATTENUATOR,.5-6. GHz Input Return Loss Over Vctrl Output Return Loss Over Vctrl IP3 (dbm) -4 2 4 6-2 -3. V 1. V 2. V 3. V -4 2 4 6 6 5 4 3 2 Input IP3 Over Vctrl Input IP3 Over Temperature (Vctrl = V) -2-3. V 1. V 2. V 3. V -4 C 1.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 1.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5-3 For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, 2 Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 124Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 97-3343 Fax: 97-3373 Phone: Order 71-329-47 On-line at www.hittite.com Application Support: Phone: 97-3343 Application or apps@hittite.com Support: Phone: 1--ANALOG-D

Absolute Maximum Ratings v.91 ATTENUATOR,.5-6. GHz Voltages & Currents RF Input Power +29 dbm Vdd 5.5V Control Voltage Range -.5 to 5.5V Channel Temperature 15 C Continuous Pdiss (T = 5 C).W Thermal Resistance (Channel to ground paddle) C/W Storage Temperature -65 to +15 C Operating Temperature -4 to +5 C ESD Sensitivity (HBM) Outline Drawing Package Information Class 1A NOTES: Vdd 5V @ 2 µa Vctrl to +5V @ 1 µa ELECTROSTATIC sensitive DEVICE OBserVE HANDLING PRECAUTIONS 1. PACKAGE BODY MATERIAL: LOW stress INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GrounD PADDLE MATERIAL: COPPER ALLOY. 3. LEAD AND GrounD PADDLE PLATING: 1% MATTE TIN. 4. DIMENSIONS ARE IN INCHES [MILLIMeters]. 5. LEAD SPACING TOLERANCE IS non-cumulative. 6. PAD BURR LENGTH SHALL BE.15mm MAX. PAD BURR HEIGHT SHALL BE.5mm MAX. 7. PACKAGE WARP SHALL NOT EXCEED.5mm. ALL GrounD LEADS AND GrounD PADDLE MUST BE SOLDERED TO PCB RF GrounD. 9. REFER TO HITTITE APPLICATION note FOR SUGGesteD PCB LAND PAttern. Part Number Package Body Material Lead Finish MSL Rating Package Marking [1] [2] H973 RoHS-compliant Low Stress Injection Molded Plastic 1% matte Sn MSL1 XXXX [1] 4-Digit lot number XXXX [2] Max peak reflow temperature of 26 C For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, 2 Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 124Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 97-3343 Fax: 97-3373 Phone: Order 71-329-47 On-line at www.hittite.com Application Support: Phone: 97-3343 Application or apps@hittite.com Support: Phone: 1--ANALOG-D - 4

Pin Descriptions v.91 ATTENUATOR,.5-6. GHz Pin Number Function Description Interface Schematic 1, 2, 4, 9, 11, 12 Ground Paddle Application Circuit GND 3 RFOUT These pins and the exposed ground paddle must be connected to RF/DC ground. This pin is DC coupled and matched to 5 Ohms. A blocking capacitor is required if RF line potential is not equal to V. 5 Vdd Supply Voltage 6,, 13-16 N/C The pins are not connected internally; however, all data shown herein was measured with these pins connected to RF/DC ground externally. 7 Vctrl Control Voltage 1 RFIN This pin is DC coupled and matched to 5 Ohms. A blocking capacitor is required if RF line potential is not equal to V. The is a unidirectional device with optimum linearity performance achieved with RF input signal applied to RFIN package lead. - 5 For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, 2 Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 124Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 97-3343 Fax: 97-3373 Phone: Order 71-329-47 On-line at www.hittite.com Application Support: Phone: 97-3343 Application or apps@hittite.com Support: Phone: 1--ANALOG-D

Evaluation PCB v.91 ATTENUATOR,.5-6. GHz List of Materials for Evaluation PCB 131552 [1] Item Description J1, J2 PCB Mount SMA RF Connector J3 - J5 DC Pin C1, C2 1 pf Capacitor, 42 Pkg. C3, C4 1 pf Capacitor, 42 Pkg. U1 PCB [2] Voltage Variable Attenuator 13155 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Arlon 25FR or Rogers 435 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 5 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. For price, delivery and to place orders: Hittite Microwave Corporation, For price, delivery, 2 Alpha and Road, to place Chelmsford, orders: Analog MA Devices, 124Inc., One Technology Way, P.O. Box 916, Norwood, MA 262-916 Phone: 97-3343 Fax: 97-3373 Phone: Order 71-329-47 On-line at www.hittite.com Application Support: Phone: 97-3343 Application or apps@hittite.com Support: Phone: 1--ANALOG-D - 6