Insulated Gate Bipolar Transistor (Trench IGBT), 8 A VS-GT8DAU SOT-7 PRIMARY CHARACTERISTICS V CES V I C(DC) 85 A at 9 C V CE(on) typical at A, 5 C.55 V I F(DC) 3 A at 9 C Speed 8 khz to 3 khz Package SOT-7 Circuit configuration Single switch FEATURES V trench and field stop technology Low switching losses Positive temperature coefficient Easy paralleling Square RBSOA μs short circuit capability HEXFRED antiparallel diodes with ultrasoft reverse recovery T J maximum = 5 C Fully isolated package Very low internal inductance ( 5 nh typical) Industry standard outline UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc?999 BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-7 packages Very low V CE(on) Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES V Continuous collector current I () C T C = 9 C 85 Pulsed collector current I CM 39 A T C = 5 C 8 Clamped inductive load current I LM 45 Gate to emitter voltage V GE ± V T C = 5 C 5 Diode continuous forward current I F T C = 9 C 3 A Single pulse forward current I FSM ms sine or 6 ms rectangular pulse, 85 T C = 5 C 87 Power dissipation, IGBT P D T C = 9 C 5 T C = 5 C 6 Power dissipation, diode P D T C = 9 C 3 W Isolation voltage V ISOL Any terminal to case, t = min 5 V Note () Maximum collector current admitted is A, to do not exceed the maximum temperature of terminals Revision: 3-Apr-8 Document Number: 9644 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT8DAU ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = 5.7 ma - - Collector to emitter voltage V CE(on) V GE = 5 V, I C = A, T J = 5 C -.7 - V GE = 5 V, I C = A, T J = 5 C -.76 - V V GE = 5 V, I C = A -.55.5 V CE = V GE, I C = 5.7 ma 4.75 5.8 7. Gate threshold voltage V GE(th) V CE = V GE, I C = 5.7 ma, T J = 5 C - 4.7 - Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = 5.7 ma (5 C to 5 C) - -.4 - mv/ C Transfer characteristics V GE V DS = V, I D = A - 8.5 - V V GE = V, V CE = V -.6 μa Collector to emitter leakage current I CES V GE = V, V CE = V, T J = 5 C -.4 - ma V GE = V, V CE = V, T J = 5 C -.6 - Forward voltage drop, diode V FM I F = 4 A, V GE = V, T J = 5 C - 3. - V I F = 4 A, V GE = V - 3. 3.5 I F = 4 A, V GE = V, T J = 5 C - 3. - Gate to emitter leakage current I GES V GE = ± V - - ± na SWITCHING CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Input capacitance C ies VCE = 5 V, V GE = V, f = MHz, - 935 - Reverse transfer capacitance C res - 35 - pf Turn-on switching loss E on - 4.4 - Turn-off switching loss E off - 7.3 - mj Total switching loss E tot I C = A, V CC = 7 V, -.7 - Turn-on delay time t d(on) V GE = 5 V, R g =. - 9 - L = 5 μh, Rise time t r - 59 - ns Turn-off delay time t d(off) - 334 - Energy losses Fall time t f include tail - 37 - Turn-on switching loss E on and diode - 5.7 - recovery Turn-off switching loss E off -.6 - mj Total switching loss E tot I = A, V = 7 V, C CC - 7.3 - Turn-on delay time t d(on) V GE = 5 V, R g =. - - Rise time t r L = 5 μh, T J = 5 C - 6 - Turn-off delay time t d(off) - 485 - ns Fall time t f - 38 - Reverse bias safe operating area RBSOA T J = 5 C, I C = 45 A, R g =. V GE = 5 V to V, V CC = 6 V, V P = V, L = 5 μh Fullsquare Diode reverse recovery time t rr - 63 - ns Diode peak reverse current I rr I F = 5 A, di F /dt = A/μs, V R = 4 V -.4 - A Diode recovery charge Q rr - 85 - nc Diode reverse recovery time t rr - 5 - ns Diode peak reverse current I rr I F = 5 A, di F /dt = A/μs, V R = 4 V, T J = 5 C - 4.9 - A Diode recovery charge Q rr - 698 - nc Short circuit safe operating area SCSOA T J = 5 C, V GE = 5 V to V, V CC = 8 V, V p = V μs Revision: 3-Apr-8 Document Number: 9644 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT8DAU THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T J, T Stg -4-5 C Junction to case IGBT - -.5 R thjc Diode - -.57 C/W Case to heatsink R thcs Flat, greased surface -.5 - Weight - 3 - g Mounting torque Torque to terminal - -. (9.7) Nm (lbf. in) Torque to heatsink - -.3 (.5) Nm (lbf. in) Case style SOT-7 I C (A) 3 75 5 5 75 5 5 75 5 5 T J = 5 C T J = 5 C.5..5..5 3. 3.5 4. Allowable Case Temperature ( C) 8 6 4 8 6 4 DC 5 5 5 3 V CE (V) I C - Continuous Collector Current (A) Fig. - Typical IGBT Output Characteristics, V GE = 5 V Fig. 3 - Maximum IGBT Continuous Collector Current vs. Case Temperature I C (A) 3 75 5 5 75 5 5 75 5 5 V GE = 9 V V GE = V V GE = 5 V V GE = 8 V.5..5..5 3. 3.5 4. 4.5 5. V CE (V).4 V GE = 5 V.. 5 A.8.6 A.4. 5 A. 4 6 8 4 6 V CE (V) T J ( C) Fig. - Typical IGBT Output Characteristics, T J = 5 C Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature Revision: 3-Apr-8 3 Document Number: 9644 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT8DAU www.vishay.com 5 V CE = V 5 T J = 5 C 8 I C (A) 75 I F (A) 6 T J = 5 C 5 4 T J = 5 C 5 5 6 7 8 9.. 3. 4. 5. 6. V GE (V) V FM (V) Fig. 5 - Typical IGBT Transfer Characteristics Fig. 8 - Typical Diode Forward Characteristics 7. 8 V GEth (V) 6.5 6. 5.5 5. 4.5 4. 3.5 3. T J = 5 C.. 3. 4. 5. 6. 7. 8. Allowable Case Temperature ( C) 6 4 8 6 4 DC 3 4 5 6 I C (ma) I F - Continuous Forward Current (A) Fig. 6 - Typical IGBT Gate Threshold Voltage Fig. 9 - Maximum Diode Continuous Forward Current vs. Case Temperature 4 T J = 5 C I CES (ma)... T J = 5 C Energy (mj) 8 6 4 Eoff Eon. 3 4 5 6 7 8 9 V CES (V) Fig. 7 - Typical IGBT Zero Gate Voltage Collector Current 3 4 5 6 7 8 9 I C (A) Fig. - Typical IGBT Energy Loss vs. I C T J = 5 C, V CC = 7 V, R g =., V GE = 5 V, L = 5 μh Revision: 3-Apr-8 4 Document Number: 9644 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT8DAU www.vishay.com 3 t d(off) 3 8 Switching Time (ns) t f t d(on) t r t rr (ns) 6 4 8 6 4 T J = 5 C 4 6 8 3 4 5 I C (A) di F /dt (A/μs) Fig. - Typical IGBT Switching Time vs. I C T J = 5 C, V CC = 7 V, R g =.,, V GE = 5 V, L = 5 μh Fig. 4 - Typical Diode Reverse Recovery Time vs. di F /dt V rr = 4 V, I F = 5 A 6 6 Energy (mj) 4 8 6 Eoff Eon I rr (A) 4 8 6 4 T J = 5 C 4 8 6 4 6 8 4 3 4 5 R g (Ω) di F /dt (A/μs) Fig. - Typical IGBT Energy Loss vs. R g T J = 5 C, V CC = 7 V, I C = A, V GE = 5 V, L = 5 μh Fig. 5 - Typical Diode Reverse Recovery Current vs. di F /dt V rr = 4 V, I F = 5 A t d(off) T J = 5 C Switching Time (ns) t d(on) t f t r Q rr (nc) 8 6 4 8 4 6 8 R g (Ω) 6 3 4 5 di F /dt (A/μs) Fig. 3 - Typical IGBT Switching Time vs. R g T J = 5 C, V CC = 7 V, I C = A, V GE = 5 V, L = 5 μh Fig. 6 - Typical Diode Reverse Recovery Charge vs. di F /dt V rr = 4 V, I F = 5 A Revision: 3-Apr-8 5 Document Number: 9644 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT8DAU I CE - Collector-Emitter Current (A). Limited by V CE(on) T A = 5 C T J = 5 C V GE = 5 V Single pulse t p = μs t p = ms t p = 6 ms V CE - Collector-Emitter Voltage (V) Fig. 7 - IGBT Safe Operating Area Z thjc - Thermal Impedance Junction to Case ( C/W)...5....5.. DC...... t - Rectangular Pulse Duration (s) Fig. 8 - Maximum Thermal Impedance Z thjc Characteristics - (IGBT) Z thjc - Thermal Impedance Junction to Case ( C/W)...5...5.. DC...... t - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance Z thjc Characteristics - (Diode) Revision: 3-Apr-8 6 Document Number: 9644 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT8DAU 5 45 I C - Collector Curent (A) 4 35 3 5 5 5 V CE (V) Fig. - IGBT Reverse Bias SOA V GE = 5 V, T J = 5 C 5 V V L V C * D.U.T. D.U.T. R = V CC I CM + - V CC R g * Driver same type as D.U.T.; V C = 8 % of V ce(max) * Note: Due to the 5 V power supply, pulse width and inductor will increase to obtain Id Fig. - Clamped Inductive Load Test Circuit Fig. - Pulsed Collector Current Test Circuit Diode clamp/ D.U.T. L - + - 5 V R g D.U.T./ driver + - V CC Fig. 3 - Switching Loss Test Circuit Revision: 3-Apr-8 7 Document Number: 9644 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT8DAU 9 % 3 % V C 9 % t d(off) I C % 5 % t r t f t d(on) t = 5 µs E on E off ORDERING INFORMATION TABLE E ts = (E on + E off ) Fig. 4 - Switching Loss Waveforms Test Circuit Device code VS- G T 8 D A U 3 4 5 6 7 8 3 4 5 6 7 8 - product - Insulated gate bipolar transistor (IGBT) - Trench IGBT technology - Current rating (8 = 8 A) - Circuit configuration (D = single switch with antiparallel diode) - Package indicator (A = SOT-7) - Voltage rating ( = V) - Speed/type (U = ultrafast) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 3 (C) Lead Assignment 4 3 Single switch diode D (G), 4 (E) Dimensions Packaging information LINKS TO RELATED DOCUMENTS www.vishay.com/doc?9543 www.vishay.com/doc?9545 Revision: 3-Apr-8 8 Document Number: 9644 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Outline Dimensions SOT-7 Generation II DIMENSIONS in millimeters (inches) Ø 4. (.6) Ø 4.3 (.69) 38.3 (.58) 37.8 (.488) -A- 4 x M4 nuts.5 (.49) 3. (.5) 6.5 (.46) 6.5 (.56) 5.7 (.) 4.7 (.97) -B- 7.45 (.93) 7.6 (.99) 3.5 (.) 9.8 (.73) 4.9 (.587) 5. (.598) R full. (.83). (.87) 3.5 (.4) 3. (.64) 8.3 (.37) 4 x 7.7 (.33).5 (.) M C A M B M. (.87).9 (.75) 4. (.6) 4.5 (.77) -C-.3 (.5).3 (.484).7 (.46) 5. (.984) 5.5 (.4) Note Controlling dimension: millimeter Revision: -Aug- Document Number: 9543 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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