SHF Communication Technologies AG

Similar documents
SHF Communication Technologies AG

SHF Communication Technologies AG

Datasheet SHF 100 BPP

SHF Communication Technologies AG

SHF Communication Technologies AG. Wilhelm-von-Siemens-Str. 23D Berlin Germany. Phone Fax

SHF Communication Technologies AG. Wilhelm-von-Siemens-Str. 23D Berlin Germany. Phone Fax

SHF Communication Technologies AG. Wilhelm-von-Siemens-Str. 23D Berlin Germany. Phone Fax

SHF Communication Technologies AG. Wilhelm-von-Siemens-Str. 23D Berlin Germany. Phone Fax

SHF Communication Technologies AG. Wilhelm-von-Siemens-Str. 23D Berlin Germany. Phone Fax

SHF Communication Technologies AG. Wilhelm-von-Siemens-Str. 23D Berlin Germany. Phone Fax

SHF Communication Technologies AG. Wilhelm-von-Siemens-Str. 23D Berlin Germany. Phone / Fax /

Features. = +25 C, +Vdc = +6V, -Vdc = -5V

BROADBAND DISTRIBUTED AMPLIFIER

Features. = +25 C, Vdc = +7V

SHF Communication Technologies AG

Features. = +25 C, +Vdc = +6V, -Vdc = -5V

Features. = +25 C, Vs= +8V to +16V

DR-AN-40-MO 40 GHz Analog Medium Output Voltage Driver

Features. The HMC-C072 is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT. = +25 C, Vdc = +7V

SHF Communication Technologies AG

SHF Communication Technologies AG

SHF Communication Technologies AG

FMAM4032 DATA SHEET. 10 MHz to 6 GHz, Medium Power Broadband Amplifier with 900 mw, 24 db Gain and SMA. Features: Applications:

SHF Communication Technologies AG

SHF Communication Technologies AG

SHF Communication Technologies AG

CHA5294 RoHS COMPLIANT

SHF Communication Technologies AG

GPS LOW NOISE AMPLIFIER GaAs MMIC. -2.0dBm GND RFOUT

Preliminary DATA SHEET VWA Product-Line

GHz 6-Bit Digital Phase Shifter Module

Features. Gain Variation Over Temperature db/ C

Features. = +25 C, Vdc = +5V

CHA2098b RoHS COMPLIANT

Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +10

CHA F RoHS COMPLIANT

Data Sheet. AMMP GHz High Gain Amplifier in SMT Package. Description. Features. Applications. Package Diagram. Functional Block Diagram

FMAM1035 DATA SHEET. 6 db NF Low Phase Noise Amplifier Operating From 3 GHz to 8 GHz with 11 db Gain, 14 dbm P1dB and SMA. Features: Applications:

Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +37

CHA2395 RoHS COMPLIANT

CMD119P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.6 V, T A = 25 o C, F=8GHz

S Band 7 Bit Digital Attenuator

it to 18 GHz, 2-W Amplifier

Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +10

2-20 GHz Driver Amplifier

CMD132P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.

HMC599ST89 / 599ST89E. Features. The HMC599ST89(E) is ideal for: = +25 C MHz. Gain Variation Over Temperature MHz 0.

WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC

Gallium Nitride MMIC Power Amplifier

CMD187C GHz Driver Amplifier. Features. Functional Block Diagram. Description

OBSOLETE HMC5846LS6 AMPLIFIERS - LINEAR & POWER - SMT. Electrical Specifications, T A. Features. Typical Applications. General Description

1-24 GHz Distributed Driver Amplifier

HMC5805ALS6 AMPLIFIERS - LINEAR & POWER - SMT. Typical Applications. Features. Functional Diagram

GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.

SHF Communication Technologies AG

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 70 ma

UHF BAND LOW NOISE AMPLIFIER GaAs MMIC

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 45 ma

GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.

4-8 GHz Low Noise Amplifier

Preliminary DATA SHEET VWA Product-Line

GaAs MMIC Power Amplifier

MGA Low Noise Amplifier. Data Sheet. 42x. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic

Features = +5V. = +25 C, Vdd 1. = Vdd 2

MGA Low Noise Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package SOT-343 /4-lead SC70. Simplified Schematic

Agilent 87415A, 87400A Microwave Amplifiers

GaAs MMIC devices are susceptible to Electrostatic Discharge. Use proper ESD precautions when handling these items.

GaAs MMIC Double Balanced Mixer. Description Package Green Status

CHA2095a RoHS COMPLIANT

Parameter Symbol Units MIN MAX. RF Input power (CW) Pin dbm +20

HMC-AUH232 MICROWAVE & OPTICAL DRIVER AMPLIFIERS - CHIP. GaAs HEMT MMIC MODULATOR DRIVER AMPLIFIER, DC - 43 GHz. Typical Applications.

MODEL GB/S BROADBAND AMPLIFIER

CMD157P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.

BROADBAND DISTRIBUTED AMPLIFIER

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

High Power Ka-Band SPDT Switch

GaAs MMIC Power Amplifier

DR-DG-10-HO. 10 Gbps High Output Voltage Driver Module. Digital Driver. Features. Performance Highlights. Applications Gbps Output Response

4W Ultra Wide Band Power Amplifier 0.1GHz~22GHz

Datasheet SHF D Synthesized Clock Generator

Features. = +25 C, Vdd = 5V

RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]

CMD158P GHz Driver Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 5.

Features. = +25 C, Vdd =+28V, Idd = 850 ma [1]

TEL: FAX: v.117 HMC3 / 3E GENERAL PURPOSE 1 mw GaAs MMIC AMPLIFIER, GHz Broadband Gain & Return Vdd =

= 25 C) Parameter 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units. Gain db. 32 dbm W

Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V

Features. = +25 C, Vdd = +5V, Idd = 400mA [1]

Features. = +25 C, Vdd 1, 2, 3 = +3V

AM002535MM-BM-R AM002535MM-FM-R

GaAs MMIC Power Amplifier

8.5 GHz to 13.5 GHz, GaAs, MMIC, I/Q Mixer HMC521ALC4

HMC326MS8G / 326MS8GE

MMA051PP45 Datasheet. DC 22 GHz 1W GaAs MMIC phemt Distributed Power Amplifier

CHA2159 RoHS COMPLIANT

Transcription:

SHF Communication Technologies AG Wilhelm-von-Siemens-Str. 23 Aufgang D 12277 Berlin Marienfelde Germany Phone ++49 / 772 05 10 Fax ++49 / 753 10 78 E-Mail: sales@shf.biz Web: http://www.shf.biz Datasheet SHF 816 Power Amplifier

Specifications SHF 816 Parameter Symbol Unit Min Typ Max Conditions High frequency 3 db point f HIGH GHz 27 Low frequency 3 db point f LOW GHz 17 Gain G db 31 32 inverting Gain control voltage U gc V 0-5 reduces gain by more than 3 db 1 Output power at 1 db compression Output power at 2 db compression Output power at 3 db compression P 01dB P 02dB P 03dB dbm (V) dbm (V) dbm (V) 29 (17.8) (20).5 (21) (20).5 (21) 31 (22) >17.5GHz <27GHz >17.5GHz <27GHz >17.5GHz <27GHz Input return loss S 11 db -10 >17GHz <27GHz Output return loss S 22 db -10 >17GHz <27GHz Maximum input power dbm 4 10 in operation without power supply Supply voltage U s V 9 10 1.1 A, reverse voltage protected Power consumption W 9.9 using 9 V supply voltage Input connector K (2.9mm) female 2 Output connector K (2.9mm) male 2 Dimensions (LxWxH) mm 51x35x13.5 excluding connectors 1 large signal gain see page 4 2 other connectors available on request The SHF 816 has a three stage amplifier design using special monolithic microwave integrated circuits (MMICs) inside special carriers to achieve low noise performance. The custom made MMIC carrier is optimized for good input return loss between its interior and the 50 Ohm outside hybrid technology. The computer optimized broadband circuit is specially tuned for maximum output power and gain. A voltage regulator IC makes the amplifier insensitive to reverse voltage and line ripple. SHF reserves the right to change specifications and design without notice SHF 816 Rev. 1.2 22/APR/2004 Page 2/6

S-Parameters, group delay and phase response at maximum gain Aperture of group delay measurement: 81 MHz SHF reserves the right to change specifications and design without notice SHF 816 Rev. 1.2 22/APR/2004 Page 3/6

Saturation power Top (red): 3 db compression; Middle (green): 2 db compression; Bottom (blue): 1 db compression Gain reduction function S 21 [ db ] 34 32 28 26 24 S21 (db) - Ugc=0V S21 (db) - Ugc=-2V S21 (db) - Ugc=-3V 22 S21 (db) - Ugc=-4V S21 (db) - Ugc=-5V 20 16 18 20 22 24 26 28 Frequency [ GHz ] S 21 measured at different gain control voltages. Power in = -2dBm Ugc=0V Ugc=-4V Ugc=-3V Ugc=-5V 32 28 26 24 22 Pout [ dbm ] 20 18 16-10 -9-8 -7-6 -5-4 -3-2 -1 Pin [ dbm ] Output power vs. input power at different gain control voltages. Measured at 20GHz SHF reserves the right to change specifications and design without notice SHF 816 Rev. 1.2 22/APR/2004 Page 4/6

Available Options 01: DC return on input 02: Built-in bias-t on input 03: DC return on output 04: Built-in bias-t on output The following options cannot be combined: 01 and 02 03 and 04 02 and 04 Side view Top view Output Bias-T (Optional) 42 44 47,4 7,15 10,6 16,5 4,9 Bottom view Input Bias-T (Optional) Output Input Power supply Gain Control 4,8 32 35 9,5 13,5 42 3 M2,5x5 (4x) 48 51 31 SHF reserves the right to change specifications and design without notice SHF 816 Rev. 1.2 22/APR/2004 Page 5/6

User Instructions ATTENTION! Electrostatic sensitive GaAs FET amplifier 1. To prevent damage through static charge build up, cables should be always discharged before connecting them to the amplifier! 2. Attach a 50 Ohm output load before supplying DC power to the amplifier! 3. The supply voltage can be taken from any regular 9 10V, 1.1A DC power supply and can be connected to the supply feed-through filter via an ON / OFF switch. 4. The minimum supply voltage is 9V. A higher one increases the power dissipation of the internal voltage stabilizer. 5. Using a 3 db or 6 db input attenuator will result in a 6 db or 12 db increase of the input return loss. For minimal degradation these attenuators should have a bandwidth specification of >40 GHz (K/ 2.9mm attenuators)! 6. An input signal of about 0.5 V pp equivalent to -2 dbm will produce the full swing output of 20 V pp 7. We recommend that the amplifier be used in conjunction with a 50 Ohm load. Use of a reflective load for extended periods should be avoided. 8. The input voltage should never be greater than 1 V pp equivalent to 4 dbm input power. The input voltage without DC power supplied to the amplifier should never be greater than 2 V pp equivalent to 10 dbm input power. SHF reserves the right to change specifications and design without notice SHF 816 Rev. 1.2 22/APR/2004 Page 6/6