STARPOWER SEMICONDUCTOR MOSFET MD25CUR120D6S 1200V/25A chopper in one-package General Description STARPOWER MOSFET Power Module provides very low R DS(on) as well as optimized intrinsic diode. It s designed for the applications such SMPS and solar power. Features SiC power MOSFET Low R DS(on) Optimized intrinsic reverse diode Avalanche ruggedness Low inductance case AlN substrate for low thermal resistance Isolated copper baseplate using DBC technology Typical Applications Electric vehicle Solar Power Switching mode power supply Equivalent Circuit Schematic 2017 STARPOWER Semiconductor Ltd. 4/18/2017 1/6 Preliminary
Absolute Maximum Ratings T C =25 o C unless otherwise noted MOSFET V DSS Drain-Source Voltage 1200 V V GSS Gate-Source Voltage -4/+22 V I D Drain Current 25 A I DM Pulsed Drain Current 77 A P D Maximum Power Dissipation @ T j =175 o C 111 W Body Diode I S Source Current 25 A I SM Pulsed Source Current 77 A Diode V RRM Repetitive Peak Reverse Voltage 1200 V I F Diode Continuous Forward Current 25 A I FM Diode Maximum Forward Current t p =1ms 77 A Module T jmax Maximum Junction Temperature 175 o C T jop Operating Junction Temperature -40 to +150 o C T STG Storage Temperature Range -40 to +125 o C V ISO Isolation Voltage RMS,f=50Hz,t=1min 4000 V 2017 STARPOWER Semiconductor Ltd. 4/18/2017 2/6 Preliminary
MOSFET Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit R DS(on) I D =10A,V GS =18V, Static Drain-Source T j =25 o 80 100 C On-Resistance I D =10A,V GS =18V, T j =125 o 120 C mω V GS(th) Gate-Source Threshold Voltage I D =5.0mA,V DS =10V, 2.7 5.6 V g fs Forward Transconductance V DS =10V,I D =10A, 4.4 S I DSS Drain-Source Leakage Current V DS =V DSS,V GS =0V, 10 μa I GSS Gate-Source Leakage Current V GS =V GSS,V DS =0V, 100 na R Gint Internal Gate Resistance 12.0 Ω C iss Input Capacitance 785 pf C oss Output Capacitance V GS =0V,V DS =800V, 75 pf C rss Reverse Transfer f=1.0mhz Capacitance 35 pf Q g Total Gate Charge 60 nc Q gs Gate-Source Charge I D =10A,V DS =600V, 15 nc Q gd Gate-Drain ("Miller") Charge V GS =18V 25 nc t d(on) Turn-On Delay Time 15 ns V DS =400V,I D =10A, t r Rise Time 22 ns R G =0Ω,V GS =18V, t d(off) Turn-Off Delay Time T j =25 o 29 ns C t f Fall Time 24 ns Body Diode Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Diode Forward Voltage I S =10A,V GS =0V, 3.20 3.65 V Diode Reverse 17 ns Recovery Time V R =600V,I S =10A, Diode Reverse di/dt=1100a/μs,v GS =0V, 50 nc Recovery Charge Peak Reverse 6.0 A Recovery Current V SD t rr Q r I RM 2017 STARPOWER Semiconductor Ltd. 4/18/2017 3/6 Preliminary
Diode Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Diode Forward Voltage I S =20A,V GS =0V, 1.40 1.85 V Peak Reverse Recovery Current V R =1200V,V GS =0V, 20 μa V SD I RM Module Characteristics T C =25 o C unless otherwise noted Symbol Parameter Min. Typ. Max. Unit R thjc Junction-to-Case (per MOSFET) 1.348 Junction-to-Case (per Diode) 1.048 K/W R thch Case-to-Heatsink (per MOSFET) Case-to-Heatsink (per Diode) Case-to-Heatsink (per module) 0.343 0.267 0.150 K/W M Terminal Connection Torque, Screw M4 1.1 1.5 Mounting Torque, Screw M4 1.1 1.5 N.m G Weight of Module 35 g 2017 STARPOWER Semiconductor Ltd. 4/18/2017 4/6 Preliminary
Circuit Schematic 3 4 1 2 Package Dimensions Dimensions in Millimeters 2017 STARPOWER Semiconductor Ltd. 4/18/2017 5/6 Preliminary
Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see www.powersemi.cc), For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved. 2017 STARPOWER Semiconductor Ltd. 4/18/2017 6/6 Preliminary