V DSS R DS(on) max I D

PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note AN) l Fully Characterized Avalanche Voltage and Current l Lead-Free SOT-223 Absolute Maximum Ratings Parameter Max. Units I D @ T A = 25 C Continuous Drain Current, V GS @ V 2.6 I D @ T A = 70 C Continuous Drain Current, V GS @ V 2. A I DM Pulsed Drain Current 2 P D @T A = 25 C Power Dissipation 2.8 W Linear Derating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt 6.3 V/ns T J Operating Junction and -55 to + 50 T STG Storage Temperature Range Soldering Temperature, for seconds 300 (.6mm from case ) C Thermal Resistance Symbol Parameter Typ. Max. Units R θja Junction-to-Ambient (PCB Mount, steady state) 45 C/W Notes through are on page 8 www.irf.com 09/22/

IRFL435PbF Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 50 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient 0.9 V/ C Reference to 25 C, I D = ma ƒ R DS(on) Static Drain-to-Source On-Resistance 85 mω V GS = V, I D =.6A ƒ V GS(th) Gate Threshold Voltage 3.0 5.0 V V DS = V GS, I D = 250µA I DSS Drain-to-Source Leakage Current 25 V µa DS = 50V, V GS = 0V 250 V DS = 20V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage V GS = 30V na Gate-to-Source Reverse Leakage - V GS = -30V Dynamic @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 3.5 S V DS = 50V, I D =.6A Q g Total Gate Charge 2 9 I D =.6A Q gs Gate-to-Source Charge 2. 3. nc V DS = 20V Q gd Gate-to-Drain ("Miller") Charge 6.8 V GS = V t d(on) Turn-On Delay Time 8.4 V DD = 75V t r Rise Time 2 ns I D =.6A t d(off) Turn-Off Delay Time 20 R G = 5Ω t f Fall Time 9 V GS = V ƒ C iss Input Capacitance 420 V GS = 0V C oss Output Capacitance V DS = 25V C rss Reverse Transfer Capacitance 25 pf ƒ =.0MHz C oss Output Capacitance 720 V GS = 0V, V DS =.0V, ƒ =.0MHz C oss Output Capacitance 48 V GS = 0V, V DS = 20V, ƒ =.0MHz C oss eff. Effective Output Capacitance 98 V GS = 0V, V DS = 0V to 20V Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 38 mj I AR Avalanche Current 3. A Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 2.6 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 2 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage.5 V T J = 25 C, I S = 2.A, V GS = 0V ƒ t rr Reverse Recovery Time 6 9 ns T J = 25 C, I F =.6A Q rr Reverse RecoveryCharge 60 240 nc di/dt = A/µs ƒ 2 www.irf.com

I D, Drain-to-Source Current (Α) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFL435PbF VGS TOP 5V 2V V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V VGS TOP 5V 2V V 8.0V 7.0V 6.5V 6.0V BOTTOM 5.5V 5.5V 5.5V 0. 0.0 20µs PULSE WIDTH Tj = 25 C 0. V DS, Drain-to-Source Voltage (V) 0. 20µs PULSE WIDTH Tj = 50 C 0. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics.00 2.5 I D = 2.6A 2.0.00 T J = 50 C T J = 25 C V DS = 50V 20µs PULSE WIDTH.00 5.0 6.0 7.0 8.0 9.0.0 V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized).5.0 0.5 V GS = V 0.0-60 -40-20 0 20 40 60 80 20 40 60 T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3

I D, Drain-to-Source Current (A) C, Capacitance(pF) V GS, Gate-to-Source Voltage (V) IRFL435PbF 00 0 V GS = 0V, f = MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd 2 8 I D =.6A V DS = 20V V DS = 75V V DS = 30V C iss 6 C oss 4 C rss 0 2 0 FOR TEST CIRCUIT SEE FIGURE 3 0 2 4 6 8 2 4 V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on) I SD, Reverse Drain Current (A) T = 50 J C T = 25 J C V GS = 0 V 0. 0.0 0.5.0.5 2.0 2.5 V SD,Source-to-Drain Voltage (V) 0. Tc = 25 C Tj = 50 C Single Pulse µsec msec msec 0 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com

IRFL435PbF 3.0 V DS R D I D, Drain Current (A) 2.5 2.0.5.0 0.5 0.0 25 50 75 25 50 T A, Ambient Temperature ( C) Fig a. Switching Time Test Circuit V DS 90% R G V GS V Pulse Width µs Duty Factor 0. % D.U.T. + - V DD Fig 9. Maximum Drain Current Vs. Ambient Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thja ) D = 0.50 0.20 0. 0.05 0.02 0.0 P DM t t 2 SINGLE PULSE Notes: (THERMAL RESPONSE). Duty factor D = t / t 2 2. Peak T J = P DM x Z thja + T A 0. 0.0000 0.000 0.00 0.0 0. t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5

R DS (on), Drain-to-Source On Resistance (mω) R DS(on), Drain-to -Source On Resistance (mω) IRFL435PbF 240 220 200 4000 3500 3000 80 60 V GS = V 2500 2000 500 40 20 0 500 I D = 2.6A 0 5 5 20 25 I D, Drain Current (A) 0 4.5 6.0 7.5 9.0.5 2.0 3.5 5.0 V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance Vs. Drain Current Fig 3. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. 2V V GS.2µF 50KΩ.3µF + V D.U.T. - DS 3mA I G I D Current Sampling Resistors V GS V G Q GS Q G Q GD Charge 80 TOP BOTTOM I D.4A 2.5A 3.A I AS Fig 4a&b. Basic Gate Charge Test Circuit and Waveform tp V(BR)DSS R G V DS 20V tp L D.U.T I AS 0.0Ω 5V DRIVER + - V DD A E AS, Single Pulse Avalanche Energy (mj) 60 40 20 0 25 50 75 25 50 Starting Tj, Junction Temperature ( C) Fig 5a&b. Unclamped Inductive Test circuit Fig 5c. Maximum Avalanche Energy and Waveforms Vs. Drain Current 6 www.irf.com

IRFL435PbF SOT-223 (TO-26AA) Package Outline Dimensions are shown in milimeters (inches) SOT-223 (TO-26AA) Part Marking Information HEXFET PRODUCT MARKING THIS IS AN IRFL04 INTERNATIONAL RECTIFIER LOGO FL04 34P TOP PART NUMBER DATE CODE (YYWW) YY = YEAR WW = WE E K P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) LOT CODE A = ASSEMBLY SITE CODE AXXXX BOTTOM Notes:. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/ 2. For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7

IRFL435PbF SOT-223 (TO-26AA) Tape & Reel Information Dimensions are shown in milimeters (inches) TR 2.05 (.080).95 (.077) 4. (.6) 3.90 (.54).85 (.072).65 (.065) 0.35 (.03) 0.25 (.0) 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 6.30 (.64) 5.70 (.69).60 (.062).50 (.059) TYP. FEED DIRECTION 2. (.475).90 (.469) 7. (.279) 6.90 (.272) 2.30 (.090) 2. (.083) NOTES :. CONTROLLING DIMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. 3. EACH O330.00 (3.00) REEL CONTAINS 2,500 DEVICES. 3.20 (.59) 2.80 (.504) 5.40 (.607).90 (.469) 4 330.00 (3.000) MAX. 50.00 (.969) MIN. NOTES :. OUTLINE COMFORMS TO EIA-48-. 2. CONTROLLING DIMENSION: MILLIMETER.. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 4.40 (.566) 2.40 (.488) 3 8.40 (.724) MAX. 4 Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 7.8mH R G = 25Ω, I AS = 3.A. ƒ Pulse width 400µs; duty cycle 2%. When mounted on inch square copper board. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. I SD.6A, di/dt 230A/µs, V DD V (BR)DSS, T J 50 C. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) 252-75 TAC Fax: (3) 252-7903 Visit us at www.irf.com for sales contact information.09/20 8 www.irf.com