Ordering number : ENA16 TIG6SS N-Channel IGBT 4V, 1A, VCE(sat);.8V Single SOIC8 http://onsemi.com Features Low-saturation voltage Enhansment type High speed switching 4.V drive Built-in Gate-to-Emitter protection diode Halogen free compliance Specifications Absolute Maximum Ratings at Ta= C Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage (DC) VCES 4 V Collector-to-Emitter Voltage (Pulse) VCESP PW 1ms 4 V Gate-to-Emitter Voltage (DC) VGES ±6 V Gate-to-Emitter Voltage (Pulse) VGESP PW 1ms ±8 V Collector Current (Pulse) ICP CM=6μF 1 A Maximum Collector-to-Emitter dv / dt dv / dt VCE V, starting Tch= C 1 V / μs Allowable Power Dissipation PD When mounted on FR4 substrate (11,68mm 1.6mm) 1. W Channel Temperature Tch 1 C Storage Temperature Tstg -4 to +1 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) - Product & Package Information Package : SOIC8 JEITA, JEDEC : SC-8, SOT-96 Minimum Packing Quantity : pcs./reel 8 4.9. TIG6SS-TL-W Packing Type: TL Marking 6..9 1. 1 4 1..44.4 (GAGE PLANE) 1...1 1 : Emitter : Emitter : Emitter 4 : Gate : Collector 6 : Collector : Collector 8 : Collector TL Electrical Connection to 8 TIG 6 LOT No..1 SOIC8 4 1 to Semiconductor Components Industries, LLC, 1 September, 1 O1PJ TKIM TC-6 No. A16-1/9
TIG6SS Electrical Characteristics at Ta= C Parameter Symbol Conditions Ratings min typ max Unit Collector-to-Emitter Breakdown Voltage V(BR)CES IC=mA, VGE=V 4 V Collector-to-Emitter Cutoff Current ICES VCE=V, VGE=V 1 μa Gate-to-Emitter Leakage Current IGES VGE=±6V, VCE=V ±1 μa Gate-to-Emitter Threshold Voltage VGE(off) VCE=1V, IC=1mA.4 1. V Collector-to-Emitter Saturation Voltage VCE(sat) IC=1A, VGE=4V.8 V Input Capacitance Cies 1 pf Output Capacitance Coes VCE=1V, f=1mhz 9 pf Reverse Transfer Capacitance Cres 4 pf Fall Time tf IC=1A, VCC=V, Resistor load VGE=4V, RG=6Ω ns Fig1 Large Current R Load Switching Circuit RL CM + VCC R G 4V V 1kΩ TIG6SS Note1. Gate Series Resistance RG 6Ω is recommended for protection purpose at the time of turn OFF. However, if dv / dt 1 / μs is satisfied at customer s actual set evaluation, RG < 6Ω can also be used. Note. The collector voltage gradient dv / dt must be smaller than 1V / μs to protect the device when it is turned off. Ordering Information Device Package Shipping memo TIG6SS-TL-W SOIC8,pcs./reel Pb Free and Halogen Free No. A16-/9
TIG6SS Collector Current, I C -- A 1 1 1 1 4.V V GE =.V IC -- VCE.V Tc= C.V Collector Current, I C -- A V CE =V 1 1 1 1 IC -- VGE Tc= -- C C C Collector-to-Emitter Voltage, V CE -- V 1 9 8 6 4 1 4 6 8 9 1 Collector-to-Emitter Voltage, V CE -- V IT14 VCE -- VGE Tc= -- C I C =1A 1A 1A Collector-to-Emitter Voltage, V CE -- V 1 9 8 6 4. 1. 1..... 4. 4.. Gate-to-Emitter Voltage, V GE -- V IT1 VCE -- VGE Tc= C I C =1A 1A 1A Collector-to-Emitter Voltage, V CE -- V 1 1. 1. 1 9 8 6 4.... 4. 4.. Gate-to-Emitter Voltage, V GE -- V VCE -- VGE Tc= C IC =1A 1A 1A IT16 Collector-to-Emitter Saturation Voltage, V CE (sat) -- V 1 1. 1. 6 4.... 4. 4.. Gate-to-Emitter Voltage, V GE -- V VCE(sat) -- Tc IC =1A 1A 1A IT1 VGE=4V Gate-to-Emitter Cutoff Voltage, V GE (off) -- V 1 1. 1..9.8..6..4...1 -- --.... 4. 4.. 1 1 1 Case Temperature, Tc -- C IT14 -- pf Cies, Coes, Cres 1 -- 1 1 -- 1 1 1 Gate-to-Emitter Voltage, V GE -- V IT18 Case Temperature, Tc -- C IT19 VGE(off) -- Tc Cies, Coes, Cres -- VCE 1 V CE =1V Cies f=1mhz I C =1mA Coes Cres 1 4 6 8 1 1 14 16 18 Collector-to-Emitter Voltage, V CE -- V IT141 No. A16-/9
TIG6SS Turn OFF dv / dt -- V / μs Switching Time, SW Time -- ns 1 1 1 1 1 1 SW Time -- ICP Switching test circuit Fig.1 V GE =4V V CC =V R G =6Ω td(off) tf t r td(on) 1 Collector Current (Pulse), I CP -- A IT19 dv / dt -- RG Switching test circuit Fig.1 V GE =4V V CC =V I CP =1A Switching Time, SW Time -- ns Collector Current (Pulse), I CP -- A 1 1 18 16 14 1 1 8 6 4 SW Time -- RG Switching test circuit Fig.1 V GE =4V V CC =V I CP =1A C M =6μF PW=μS td(off) 4 6 8 1 1 t f t r td(on) Gate Series Resistance, R G -- Ω IT194 ICP -- VGE Tc C C M =6μF Maximum Capacitor, C M -- μf 8 6 4 1 4 6 8 9 1 Gate Series Resistance, R G -- Ω IT14 CM -- ICP V GE =4V V CE =V Tc= C Tc= C dv / dt, dv / dt -- V / μs 1 1 1 1 1 4 6 8 9 Gate-to-Emitter Voltage, V GE -- V IT146 dv / dt -- Turn OFF IC Tc C V CE =V 1 Allowable Power Dissipation, P D -- W 4 6 8 1 1 14 16 18 Collector Current (Pulse), I CP -- A IT14 PD -- Ta 1.4 When mounted on FR4 substrate (11,68mm 1.6mm) 1. 1..8.6.4. 4 6 8 1 1 14 16 Ambient Temperature, Ta -- C IT169 4 6 8 1 1 14 16 18 Turn OFF Collector Current, Turn OFF I C -- A IT148 No. A16-4/9
TIG6SS Definition of dv/dt dv/dt is defined as the maximum slope of the below VCE curve during turn-off period. dv/dt=δvce/δt=δvce/1ns Overall waveform Enlarged picture of turn-off period V,I V CE Turn-off period Turn off V CE Δt=1ns I CP Turn off IC ΔV CE I C t V CE Definition of Switching Time V GE V GE :9% V GE :1% t V CE V CE :9% V CE :1% V CE :1% t I C t d (on) t r t d (off) I C :9% I C :1% t t f No. A16-/9
TIG6SS Taping Specification TIG6SS-TL-W No. A16-6/9
TIG6SS Feed D i rec t ion No. A16-/9
TIG6SS Outline Drawing TIG6SS-TL-W Land Pattern Example Mass (g) Unit Unit: mm.8 * For reference mm.6.6 1. 1. No. A16-8/9
TIG6SS ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A16-9/9
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