Low Side Chopper IGBT SOT-227 (Warp 2 Speed IGBT), 7 A VS-GB75LA6UF FEATURES NPT warp 2 speed IGBT technology with positive temperature coefficient Higher switching frequency up to 5 khz Square RBSOA SOT-227 PRIMARY CHARACTERISTICS V CES 6 V I C DC 7 A at 87 C V CE(on) typical at 7 A, 25 C 2.3 V I F DC 7 A at 86 C Package SOT-227 Circuit configuration Low side chopper Low V CE(on) FRED Pt hyperfast rectifier Fully isolated package Very low internal inductance ( 5 nh typical) Industry standard outline UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 BENEFITS Designed for increased operating efficiency in power conversion: UPS, SMPS, welding, induction heating Easy to assemble and parallel Direct mounting to heatsink Plug-in compatible with other SOT-227 packages Lower conduction losses and switching losses Low EMI, requires less snubbing ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES 6 V T C = 25 C 9 Continuous collector current I C T C = 8 C 75 Pulsed collector current I CM 2 Clamped inductive load current I LM 2 A T C = 25 C 3 Diode continuous forward current I F T C = 8 C 75 Single pulse forward current I FSM ms sine or 6 ms rectangular pulse, 39 Gate to emitter voltage V GE ± 2 V T C = 25 C 447 Power dissipation, IGBT P D T C = 8 C 25 T C = 25 C 236 Power dissipation, diode P D T C = 8 C 32 W RMS isolation voltage V ISOL Any terminal to case, t = min 25 V Revision: 5-Oct-7 Document Number: 95858 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB75LA6UF ELECTRICAL SPECIFICATIONS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage V BR(CES) V GE = V, I C = ma 6 - - V GE = 5 V, I C = 35 A -.73 2. Collector to emitter voltage V CE(on) V GE = 5 V, I C = 7 A - 2.3 - V V GE = 5 V, I C = 35 A, T J = 25 C - 2.4 - V GE = 5 V, I C = 7 A, T J = 25 C - 3. - Gate threshold voltage V GE(th) V CE = V GE, I C = 5 μa 2.7 4.5 5.4 Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = ma (25 C to 25 C) - -.8 - mv/ C V GE = V, V CE = 6 V - 5 5 μa Collector to emitter leakage current I CES V GE = V, V CE = 6 V, T J = 25 C -.7 - ma Diode reverse breakdown voltage V BR I R = ma 6 - - V I F = 35 A, V GE = V -.67 2.33 I F = 7 A, V GE = V -.96 - Diode forward voltage drop V FM V I F = 35 A, V GE = V, T J = 25 C -.23 - I F = 7 A, V GE = V, T J = 25 C -.55 - V R = 6 V -. 5 μa Diode reverse leakage current I RM T J = 25 C, V R = 6 V -.4 - ma Gate to emitter leakage current I GES V GE = ± 2 V - - ± 2 na SWITCHING CHARACTERISTICS ( unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turn-on) Q g - 32 - Gate to emitter charge (turn-on) Q ge I C = 5 A, V CC = 4 V, V GE = 5 V - 42 - nc Gate to collector charge (turn-on) Q gc - - Turn-on switching loss E on IC = 7 A, V = 3 V, CC -.33 - Turn-off switching loss E off V GE = 5 V, R g = 4.7 -.46 - Total switching loss E tot L = 5 μh, -.79 - Turn-on switching loss E on -.5 - mj Turn-off switching loss E Energy losses off -.56 - include tail and Total switching loss E tot I = 7 A, V = 3 V, diode recovery -.7 - C CC Turn-on delay time t d(on) V GE = 5 V, R g = 4.7-66 - Rise time t r L = 5 μh, T J = 25 C - 44 - Turn-off delay time t d(off) - 88 - ns Fall time t f - 53 - Reverse bias safe operating area RBSOA T J = 5 C, I C = 2 A, R g = 22 V GE = 5 V to V, V CC = 4 V, V P = 6 V Fullsquare Diode reverse recovery time t rr - 64 - ns Diode peak reverse current I rr I F = 5 A, di F /dt = 2 A/μs, V R = 2 V - 4.5 - A Diode recovery charge Q rr - 44 - nc Diode reverse recovery time t rr - 36 - ns Diode peak reverse current I rr I F = 5 A, di F /dt = 2 A/μs, V R = 2 V, T J = 25 C - 2 - A Diode recovery charge Q rr - 87 - nc Revision: 5-Oct-7 2 Document Number: 95858 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB75LA6UF THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Junction and storage temperature range T J, T Stg -4-5 C Junction to case IGBT - -.28 R thjc Diode - -.53 C/W Case to heatsink R thcs Flat, greased surface -.5 - Weight - 3 - g Mounting torque Torque to terminal - -. (9.7) Nm (lbf.in) Torque to heatsink - -.8 (5.9) Nm (lbf.in) Case style SOT-227 5 6 25 75 5 25 T J = 25 C T J = 5 C. 2. 3. 4. 5. Allowable Case Temperature ( C) 4 2 8 6 4 2 DC 2 4 6 8 2 V CE (V) I C - Continuous Collector Current (A) Fig. - Typical IGBT Output Characteristics, V GE = 5 V Fig. 3 - Maximum IGBT Continuous Collector Current vs. Case Temperature 5 4.5 25 75 5 V GE = 2 V V GE = 5 V V GE = 8 V V GE = 9 V V CE (V) 4. 3.5 3. 2.5 2. A 7 A 35 A 25.5. 2. 3. 4. 5. 6. V CE (V). 2 4 6 8 2 4 6 T J ( C) Fig. 2 - Typical IGBT Output Characteristics, T J = 25 C Fig. 4 - Collector to Emitter Voltage vs. Junction Temperature Revision: 5-Oct-7 3 Document Number: 95858 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB75LA6UF 7 6 5 4 3 V CE = 2 V T J = 25 C I CES (ma).. T J = 5 C T J = 25 C 2. 2 3 4 5 6 7 8 9 V GE (V) Fig. 5 - Typical IGBT Transfer Characteristics. 2 3 4 5 6 V CES (V) Fig. 8 - Typical IGBT Zero Gate Voltage Collector Current 5. 5 V GEth (V) 4.5 4. 3.5 3. T J = 25 C I F (A) 25 75 5 25 T J = 25 C T J = 5 C 2.5.2.3.4.5.6.7.8.9..5..5 2. 2.5 3. I C (ma) V FM (V) Fig. 6 - Typical IGBT Gate Threshold Voltage Fig. 9 - Typical Diode Forward Characteristics 6 Allowable Case Temperature ( C) 4 2 8 6 4 2 DC 2 4 6 8 2 V CE (V) I F - Continuous Forward Current (A) Fig. 7 - IGBT Reverse BIAS SOA, T J = 5 C, V GE = 5 V Fig. - Maximum Diode Continuous Forward Current vs. Case Temperature Revision: 5-Oct-7 4 Document Number: 95858 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB75LA6UF.6.5 Energy (mj).4.3.2. E on E off Switching Time (ns) t d(off) t d(on) t r t f 2 3 4 5 6 7 8 5 5 2 25 3 35 4 45 5 R g (Ω) Fig. - Typical IGBT Energy Loss vs. I C T J = 25 C, V CC = 3 V, R g = 4.7, V GE = 5 V, L = 5 μh Fig. 4 - Typical IGBT Switching Time vs. R g T J = 25 C, V CC = 3 V, I C = 7 A, V GE = 5 V, L = 5 μh Switching Time (ns) t d(off) t f t d(on) t r 2 3 4 5 6 7 8 t rr (ns) 6 5 4 T 3 J = 25 C 2 9 8 7 6 5 4 2 3 4 5 di F /dt (A/μs) Fig. 2 - Typical IGBT Switching Time vs. I C T J = 25 C, V CC = 3 V, R g = 4.7, V GE = 5 V, L = 5 μh Fig. 5 - Typical Diode Reverse Recovery Time vs. di F /dt V rr = 2 V, I F = 5 A Energy (mj) 3 2.5 2.5.5 E on E off 5 5 2 25 3 35 4 45 5 I rr (A) 24 22 2 8 T J = 25 C 6 4 2 8 6 4 2 2 3 4 5 R g (Ω) di F /dt (A/μs) Fig. 3 - Typical IGBT Energy Loss vs. R g T J = 25 C, V CC = 3 V, I C = 7 A, V GE = 5 V, L = 5 μh Fig. 6 - Typical Diode Reverse Recovery Current vs. di F /dt V rr = 2 V, I F = 5 A Revision: 5-Oct-7 5 Document Number: 95858 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB75LA6UF 4 2 T J = 25 C Q rr (nc) 8 6 4 2 2 3 4 5 di F /dt (A/μs) Fig. 7 - Typical Diode Reverse Recovery Charge vs. di F /dt V rr = 2 V, I F = 5 A Z thjc - Thermal Impedance Junction to Case ( C/W)..5..2..5.2. DC...... t - Rectangular Pulse Duration (s) Fig. 8 - Maximum Thermal Impedance Z thjc Characteristics (IGBT) Z thjc - Thermal Impedance Junction to Case ( C/W)...5.2..5.2. DC...... t - Rectangular Pulse Duration (s) Fig. 9 - Maximum Thermal Impedance Z thjc Characteristics (Diode) Revision: 5-Oct-7 6 Document Number: 95858 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB75LA6UF ORDERING INFORMATION TABLE Device code VS- G B 75 L A 6 U F 2 3 4 5 6 7 8 9 - product 2 - Insulated gate bipolar transistor (IGBT) 3 - B = IGBT Gen 5 4 - Current rating (75 = 7 A) 5 - Circuit configuration (L = low side chopper) 6 - Package indicator (A = SOT-227) 7 - Voltage rating (6 = 6 V) 8 - Speed/type (U = ultrafast IGBT) 9 - Diode (F = FRED Pt diode) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 4 Lead Assignment 4 3 Low side chopper L 3 2 2 Dimensions Packaging information LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95423 www.vishay.com/doc?95425 Revision: 5-Oct-7 7 Document Number: 95858 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GB75LA6UF DIMENSIONS in millimeters (inches) Ø 4. (.6) Ø 4.3 (.69) 38.3 (.58) 37.8 (.488) -A- 4 x M4 nuts 2.5 (.492) 3. (.52) 6.25 (.246) 6.5 (.256) 25.7 (.2) 24.7 (.972) -B- 7.45 (.293) 7.6 (.299) 3.5 (.2) 29.8 (.73) 4.9 (.587) 5.2 (.598) R full 2. (.83) 2.2 (.87) 3.5 (.24) 32. (.264) 8.3 (.327) 4 x 7.7 (.33).25 (.) M C A M B M 2.2 (.87).9 (.75) 4. (.6) 4.5 (.77) -C-.3 (.5) 2.3 (.484).7 (.46) 25. (.984) 25.5 (.4) Note Controlling dimension: millimeter PACKAGING INFORMATION Revision: 5-Oct-7 8 Document Number: 95858 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9