6V 3A Module MG63D-BN4MM RoHS Features High short circuit capability, self limiting short circuit current (sat) with positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Low switching losses Agency Approvals Applications AGENCY AGENCY FILE NUMBER E71639 High frequency switching application Medical applications Motion/servo control UPS systems Module Characteristics ( Symbol Parameters est Conditions Min yp Max Unit max Max. Junction emperature 175 C op Operating emperature -4 15 C stg Storage emperature -4 125 C V isol Insulation est Voltage AC, t=1min 3 V Comparative racking Index 35 orque Module-to-Sink Recommended (M6) 3 5 N m orque Module Electrodes Recommended (M6) 2.5 5 N m Weight 32 g Absolute Maximum Ratings ( Symbol Parameters est Conditions Values Unit S Collector - Emitter Voltage =25 C 6 V V GES Gate - Emitter Voltage ±2 V DC Collector Current C =25 C 4 A =7 C 3 A M Repetitive Peak Collector Current t p =1ms 6 A P tot Power Dissipation Per 94 W V RRM Repetitive Reverse Voltage =25 C 6 V I F(AV) =25 C 4 A Average Forward Current =7 C 3 A I FRM Repetitive Peak Forward Current t p =1ms 6 A I 2 t =125 C, t=1ms, V R =V 8 A 2 s Life Support Note: Not Intended for Use in Life Support or Life Saving Applications he products shown herein are not designed for use in life sustaining or life saving applications unless otherwise expressly indicated. MG63D-BN4MM 1 164 216 Littelfuse, Inc Revised:7/21/16
6V 3A Module Electrical and hermal Specifications ( Symbol Parameters est Conditions Min yp Max Unit V GE(th) Gate - Emitter hreshold Voltage =V GE, =4.8mA 4.9 5.8 6.5 V (sat) Collector - Emitter =3A, V GE =15V, =25 C 1.45 V Saturation Voltage =3A, V GE =15V, =125 C 1.6 V ES Collector Leakage Current =6V, V GE =V, =25 C 1 ma =6V, V GE =V, =125 C 5 ma I GES Gate Leakage Current =V,V GE =±15V, =125 C -4 4 na R Gint Integrated Gate Resistor 1 Ω Q ge Gate Charge V CC =3V, =3A, V GE =±15V 3.2 μc C ies Input Capacitance 19 nf =25V, V GE =V, f =1MHz C res Reverse ransfer Capacitance.57 nf t d(on) urn - on Delay ime =25 C 11 ns =125 C 12 ns t r Rise ime V CC =3V =25 C 5 ns =125 C 6 ns =3A t d(off) urn - off Delay ime J =25 C 49 ns =125 C 52 ns R G =2.4Ω t f Fall ime J =25 C 6 ns V GE =±15V =125 C 7 ns E on urn - on Energy Inductive Load =25 C 2. mj =125 C 3.1 mj E off urn - off Energy =25 C 9 mj =125 C 12 mj I SC Short Circuit Current t psc 6μS, V GE =15V; =125 C,V CC =36V 15 A R thjc Junction-to-Case hermal Resistance (Per ).16 K/W V F Forward Voltage I F =3A, V GE =V, =25 C 1.55 V I F =3A, V GE =V, =125 C 1.5 V I RRM Max. Reverse Recovery Current I F =3A, V R =3V 235 A Q rr Reverse Recovery Charge di F /dt=-65a/μs 24 μc E rec Reverse Recovery Energy =125 C 6.2 mj R thjcd Junction-to-Case hermal Resistance (Per ).32 K/W MG63D-BN4MM 165 2 216 Littelfuse, Inc Revised:7/21/16
6V 3A Module Figure 1: ypical Output Characteristics Figure 2: ypical Output characteristics 6 48 36 V GE =15V =25 C 6 48 36 =125 C V GE =19V V GE =17V V GE =15V V GE =13V V GE =11V V GE = 9V 24 24 =125 C 12 12.4.8 1.2 1.6 2. 2.4.5 1. 1.5 2. 2.5 3. 3.5 4. 4.5 5. Figure 3: ypical ransfer characteristics Figure 4: Switching Energy vs. Gate Resistor 6 48 =2V =25 C 45 35 V CC=3V =3A V GE=±15V =125 C 36 24 =125 C Eon Eoff (mj) 25 15 E on E off 12 5 5 6 7 8 9 V GE V 1 11 4 8 12 16 2 R G Ω Figure 5: Switching Energy vs. Collector Current Figure 6: Reverse Biased Safe Operating Area Eon Eoff (mj) 3 25 2 15 1 5 VCC=3V RG=2.4Ω VGE=±15V =125 C Eoff Eon 7 6 5 4 3 2 1 R G=2.4Ω V GE=±15V =125 C 2 4 A 6 1 2 3 4 5 6 7 MG63D-BN4MM 166 3 216 Littelfuse, Inc Revised:7/21/16
6V 3A Module Figure 7: Forward Characteristics Figure 8: Switching Energy vs. Gate Resistor 6 48 1 8 I F=3A =3V =125 C IF (A) 36 24 =125 C IF (A) Erec (mj) 6 4 12 =25 C 2.4.8 1.2 1.6 2. V F V 4 8 12 R G Ω 16 Figure 9: Switching Energy vs. Forward Current Figure 1: ransient hermal Impedance 1 8 R G=2.4Ω =3V =125 C 1 Erec (mj) 6 4 ZthJC (K/W).1.1 2 2 I F (A) 4 6.1.1.1.1 1 1 Rectangular Pulse Duration (seconds) MG63D-BN4MM 167 4 216 Littelfuse, Inc Revised:7/21/16
6V 3A Module Dimensions-Package D 2.8x.5 Circuit Diagram 3-M6 Packing Options Part Number Marking Weight Packing Mode M.O.Q MG63D-BN4MM MG63D-BN4MM 32g Bulk Pack 6 Part Numbering System Part Marking System MG63 D - BN4 MM PRODUC YPE M: Power Module ASSEMBLY SIE MODULE YPE G: VOLAGE RAING 6: 6V CURREN RAING 3:3A WAFER YPE CIRCUI YPE 2x(+FWD) PACKAGE YPE MG63D-BN4MM LO NUMBER MG63D-BN4MM 168 5 216 Littelfuse, Inc Revised:7/21/16