EZ2N6 General Description: EZ2N6, the silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching V DSS 6 V I D 2 A P D (T C =25 ) 25 W R DS(ON)Typ.3 Ω performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-22AB, which accords with the RoHS standard.. Features: Fast Switching Low ON Resistance(Rdson.35Ω) Low Gate Charge (Typical Data:6nC) Low Reverse transfer capacitances(typical: 2pF) % Single Pulse avalanche energy Test Applications: Power switch circuit of adaptor and charger. Absolute(Tc= 25 unless otherwise specified): Symbol Parameter V DSS Drain-to-Source Voltage 6 V I D I DM a Continuous Drain Current 2 A Continuous Drain Current T C = C 4 A Pulsed Drain Current 8 A V GS Gate-to-Source Voltage ±3 V a2 E AS Single Pulse Avalanche Energy 2 mj a E AR Avalanche Energy,Repetitive mj a I AR Avalanche Current 4.5 A dv/dt a3 Peak Diode Recovery dv/dt 5. V/ns P D Power Dissipation 25 W Derating Factor above 25 C 2. W/ T J,T stg Operating Junction and Storage Temperature Range 5, 55 to 5 T L Maximum Temperature for Soldering 3
EZ2N6 Electrical Characteristics(Tc= 25 unless otherwise specified): OFF Characteristics V DSS Drain to Source Breakdown Voltage V GS=V, I D=25µA 6 -- -- V ΔBV DSS /ΔT J Bvdss Temperature Coefficient ID=25uA,Reference25 --.65 -- V/ I DSS Drain to Source Leakage Current V DS = 6V, V GS= V, T a = 25 -- -- V DS =48V, V GS= V, T a = 25 I GSS(F) Gate to Source Forward Leakage V GS= 3V -- -- na I GSS(R) Gate to Source Reverse Leakage V GS =-3V -- -- - na ON Characteristics R DS(ON) Drain-to-Source On-Resistance V GS=V,I D=A --.3.35 Ω V GS(TH) Gate Threshold Voltage V DS = V GS, I D = 25µA 2. -- 4. V Pulse width tp 3µs,δ 2% Dynamic Characteristics g fs Forward Trans conductance V DS=5V, I D =A -- 7 -- S C iss Input Capacitance V GS = V V DS = 25V f =.MHz -- 2847 C oss Output Capacitance -- 252 C rss Reverse Transfer Capacitance -- 2 µa pf Resistive Switching Characteristics t d(on) Turn-on Delay Time I D =2A V DD = 3V R G = 25Ω -- 36 tr Rise Time -- 73 t d(off) Turn-Off Delay Time -- 66 t f Fall Time -- 73 Q g Total Gate Charge I D =2A V DD =3V V GS = V -- 6 Q gs Gate to Source Charge -- 4 -- Q gd Gate to Drain ( Miller )Charge -- 24 -- ns nc
EZ2N6 Source-Drain Diode Characteristics I S Continuous Source Current (Body Diode) -- -- 2 A I SM Maximum Pulsed Current (Body Diode) -- -- 8 A V SD Diode Forward Voltage I S=2A,V GS=V -- --.5 V trr Reverse Recovery Time I S=2A,T j = 25 C -- 425 -- ns di F/dt=A/us, V GS=V Qrr Reverse Recovery Charge -- 3.7 -- µc Pulse width tp 3µs,δ 2% Symbol Parameter Typ. R θjc Junction-to-Case.5 /W R θja Junction-to-Ambient 62 /W a :Repetitive rating; pulse width limited by maximum junction temperature a2 :L=mH, I D =5.5A, Start T J =25 a3 :I SD =2A,di/dt 2A/us,V DD BV DSS, Start T J =25
EZ2N6 Characteristics Curve: 25 2 5 5 OPERATION IN THIS AREA MAY BE LIMITED BY R DS(ON) T J=MAX RATED T C=25 Single Pulse. Vds, Drain-to-Source Voltage, Volts Figure Maximum Forward Bias Safe Operating Area DC μs μs ms ms Pd, Power Dissipation,Watts 28 24 2 6 2 8 4 25 5 75 25 5 Tc, Case Temperature, C Figure 2 Maximum Power Dissipation vs Case Temperature 35 3 25 2 5 5 First: 5V 8V 7V 6.5V 6V Sixth: 5.5V First Sixth PULSE TEST Tc = 25 25 5 75 25 5 TC, Case Temperature, C Figure 3 Maximum Continuous Drain Current vs Case Temperature 2 3 4 5 Vds, Drain-to-Source Voltage, Volts Figure 4 Typical Output Characteristics Thermal Impedance, Normalized.. % 5% Single pulse 2% 5% % 2%...... Rectangular Pulse Duration,Seconds Figure 5 Maximum Effective Thermal Impendance, Junction to Case PDM t t2 NOTES: DUTY FACTOR :D=t/ t2 PEAK Tj=P DM*Z thjc*r thjc+t C
EZ2N6 Idm, Peak Current, Amps TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE 25 DERATE PEAK CURRENT AS FOLLOWS: I = I 25 5 25 T C V GS=V.E-5.E-4.E-3.E-2.E- t Pulse Width, Seconds.E+.E+ Figure 6 Maximun Peak Current Capability PULSED TEST VDS=5V +5 +25 Rds(on), Drain to Source ON Resistance, Ohms.4.2.8.6.4.2 I D= 8A I D= 9A I D = 4.5A PULSE DURATION = μs DUTY FACTOR =.5%MAX Tc =25 Rds(on), Drain to Source ON Resistance, Ohms..8.6.4.2 2 6 8 Vgs, Gate to Source Voltage, Volts Figure 7 Typical Transfer Characteristics PULSED TEST Tc =25-55 V GS=V V GS=2V 2 3 4 5 6 7 Figure 9 Typical Drain to Source ON Resistance vs Drain Current Rds(on), Drain to Source ON Resistance, Nomalized 4 6 8 2 4 Vgs, Gate to Source Voltage,Volts Figure 8 Typical Drain to Source ON Resistance vs Gate Voltage and Drain Current 3 2.5 2.5.5 VGS=V ID=3.A - -5 5 5 2 Tj, Junction temperature, C Figure Typical Drian to Source on Resistance vs Junction Temperature
EZ2N6 Vgs(th),Threshold Voltage, Nomalized Capacitance, pf Isd, Reverse Drain Current, Amps.2..9.8.7.6.5.4 5 4 3 2. -75 VGS=V ID=25μA -5-25 25 5 75 25 5 75 Tj, Junction temperature, C Figure Typical Theshold Voltage vs Junction Temperature V GS=V, f=mhz Ciss=Cgs+Cgd Coss=Cds+Cgd Crss=Cgd. Vds, Drain - Source Voltage, Volts Figure 3 Typical Capacitance vs Drain to Source Voltage PULSE V GS=V TEST 5 Crss 25 Ciss Coss.4.8.2.6 Vsd, Source - Drain Voltage, Volts Figure 5 Typical Body Diode Transfer Characteristics Bvdss,Drain to Source Breakdown Voltage, Normalized Vgs, Gate to Source Voltage,Volts.2..9.8 2 - -5 5 5 2 Tj, Junction temperature, C Figure 2 Typical Breakdown Voltage vs Junction Temperature 8 6 4 2 5 3 45 6 75 Qg, Total Gate Charge, nc..e-6 VDD=2V ID=8A Tc =25 VDS=2V VDS=3V VDS=48V Figure 4 Typical Gate Charge vs Gate to Source Voltage If R=: t AV=(L* I AS) / (.38V DSS-V DD) If R : t AV=(L/R) In[IAS*R/ (.38V DSS-V DD)+] R equals total Series resistance of Drain circuit VGS=V ID=25μA STARTING Tj = 25 STARTING Tj = 5.E-5.E-4.E-3.E-2.E- tav, Time in Avalanche, Seconds Figure 6 Unclamped Inductive Switching Capability
Test Circuit and Waveform EZ2N6
EZ2N6