FP Description. Features. Applications. Packaging Information. 260W, 48V GaN HEMT D

Similar documents
FP Description. Features. Applications. Packaging Information. 340W, 48V GaN HEMT D

FP Description. Features. Applications. Packaging Information. 104W, 48V GaN HEMT D

FP Description. Features. Applications. Packaging Information. 50W, 28V GaN HEMT Die

CGHV1J070D. 70 W, 18.0 GHz, GaN HEMT Die

CGHV1J025D. 25 W, 18.0 GHz, GaN HEMT Die

CGH80030D. 30 W, 8.0 GHz, GaN HEMT Die. 2-Way Private Radio. Broadband Amplifiers. Cellular Infrastructure. Test Instrumentation

CGHV60040D. 40 W, 6.0 GHz, GaN HEMT Die. Cellular Infrastructure Class AB, Linear amplifiers suitable for OFDM, W-CDMA, LTE, EDGE, CDMA waveforms

= 25 C) Parameter 2.7 GHz 2.9 GHz 3.1 GHz 3.3 GHz 3.5 GHz Units Small Signal Gain db

= 25 C) Parameter 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units. Gain db. 32 dbm W

PRELIMINARY = 25 C) Parameter GHz 14.0 GHz 14.5 GHz Units Small Signal Gain db P SAT. = 26 dbm W P 3dB

D1H010DA1 10 W, 6 GHz, GaN HEMT Die

= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W

= 25 C) Parameter 2.5 GHz 4.0 GHz 6.0 GHz Units Gain db W Power P OUT. = 43 dbm

= 25 C) Parameter 8.0 GHz 9.0 GHz 10.0 GHz 11.0 GHz Units Small Signal Gain db P OUT. = 25 dbm W Power P IN

= 25 C) Parameter 5.5 GHz 6.5 GHz 7.5 GHz 8.5 GHz Units Small Signal Gain db P OUT

= 25 C) Parameter 0.5 GHz 1.0 GHz 2.5 GHz 4.0 GHz 6.0 GHz Units. Gain db. 23 dbm W

60 W, DC MHz, 50 V, GaN HEMT for LTE and Pulse Radar Applications. = 25 C) of Demonstration Amplifier

PRELIMINARY. Parameter 500 MHz 1.0 GHz 1.5 GHz 2.0 GHz 2.5 GHz Units. Small Signal Gain db

CGH55030F2 / CGH55030P2

= 25 C) of Demonstration Amplifier. Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units. 43 dbm

CG2H W, DC - 6 GHz, RF Power GaN HEMT APPLICATIONS FEATURES

CGH40006P. 6 W, RF Power GaN HEMT APPLICATIONS FEATURES

= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain

= 25 C), 50 V. Parameter 500 MHz 1.0 GHz 1.5 GHz 2.0 GHz 2.5 GHz Units. Small Signal Gain db

Features. Output Third Order Intercept (IP3) [2] dbm Power Added Efficiency %

CMPA F. 25 W, GHz, GaN MMIC, Power Amplifier. Typical Performance Over GHz (T C. Applications. Features

= 25 C) Parameter 20 MHz 0.5 GHz 1.0 GHz 2.0 GHz 3.0 GHz 4.0 GHz 5.0 GHz 6.0 GHz Units Gain

CGH55015F2 / CGH55015P2

transistor is available in a flange and pill package. Package Types: & PN s: CG2H40045F & CG2H40045P

transistor is available in a flange and pill package. Package Types: & PN s: CGH40045F & CGH40045P

CGH35060F1 / CGH35060P1

well as multi-octave bandwidth amplifiers up to 4 GHz. The transistor is available in a 2-lead flange and = 25 C), 50 V

NPA105-D. Preliminary GHz GaN 40W Power Amplifier. Product Description: Key Features:

= 25 C), CW. Parameter 1.7 GHz 1.8 GHz 1.9 GHz Units Small Signal Gain db P in. = 38 dbm

15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz = 25 C) Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.

15 W, 28V, GaN HEMT for Linear Communications ranging from VHF to 3 GHz. Parameter 2.3 GHz 2.4 GHz 2.5 GHz 2.6 GHz 2.7 GHz Units

= 25 C), 50 V. Parameter 0.96 GHz 1.1 GHz 1.25 GHz 1.4 GHz Units. Saturated Output Power W

transistor is available in a flange and pill package. Package Types: & PN s: CG2H40045P & CG2H40045F

= 25 C), CW. Parameter 1.7 GHz 1.8 GHz 1.9 GHz Units Small Signal Gain db P in. = 38 dbm

QPA1003D. 1 8 GHz 10 W GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information

NPA100-D GHz GaN 20W Power Amplifier. Product Description: Key Features:

MECGaNC30. 4 to 6 GHz GaN HEMT Power Amplifier. Main Features. Product Description. Applications

= 25 C), 50 V. Parameter 800 MHz 850 MHz 900 MHz 950 MHz 1000 MHz Units. Small Signal Gain db

MECGaNLNACX. C- to X-Band GaN HEMT Low Noise Amplifier. Main Features. Product Description. Typical Applications. Measured Data

= 25 C) Note: Measured at -30 dbc, 1.6 MHz from carrier, in the CGHV96050F1-AMP (838176) under OQPSK modulation, 1.6 Msps, PN23, Alpha Filter = 0.

Parameter 5.2 GHz 5.5 GHz 5.9 GHz Units. Small Signal Gain db. Output Power W. Efficiency

CGH40120P. 120 W, RF Power GaN HEMT FEATURES APPLICATIONS

maintaining high gain and efficiency. Parameter 5.5 GHz 6.0 GHz 6.5 GHz Units Small Signal Gain db = 28 dbm

CGH55030F1 / CGH55030P1

Features. Noise Figure db Supply Current (Idd) ma Supply Voltage (Vdd) V

NME6003H GaN TRANSISTOR

maintaining high gain and efficiency. Package Type: 3x4 DFN PN: CGHV1F025S Parameter 8.9 GHz 9.2 GHz 9.4 GHz 9.6 GHz Units = 37 dbm W

NPA110-D. Preliminary GHz GaN 38W Power Amplifier. Product Description: Key Features:

= 25 C) Note: Measured in CGHV96100F2-TB (838179) under 100 µs pulse width, 10% duty, Pin 42.0 dbm (16 W) Applications. Marine Radar.

PRELIMINARY. Cree s CGHV59070 is an internally matched gallium nitride (GaN) high electron mobility transistor

CMPA801B W, GHz, GaN MMIC, Power Amplifier. Typical Performance Over GHz (T C. Features. Applications

which offers high efficiency, high gain and wide bandwidth capabilities. The CGHV27030S GaN

MHz. The package options are ceramic/metal flange and pill package. Package Type: , PN: CGHV14250F, CGHV14250P

85W Power Transistor. GaN HEMT on SiC

= 25 C) Parameter 6.0 GHz 7.5 GHz 9.0 GHz 10.5 GHz 12.0 GHz Units Small Signal Gain db P OUT

Features. = +25 C, Vdd = +10V, Idd = 350mA

GaN/SiC Bare Die Power HEMT DC-15 GHz

MHz. The package options are ceramic/metal flange and pill package. Package Type: , PN: CGHV14250F, CGHV14250P

Advance Datasheet Revision: October Applications

Advance Datasheet Revision: January 2015

TGF um Discrete GaAs phemt

33-47 GHz Wide Band Driver Amplifier TGA4522

CMPA F. 30 W, GHz, GaN MMIC, Power Amplifier. Typical Performance Over GHz (T C. Features. Applications

HMC994A AMPLIFIERS - LINEAR & POWER - CHIP. GaAs phemt MMIC 0.5 WATT POWER AMPLIFIER, DC - 30 GHz. Features. Typical Applications

2 GHz to 30 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC8402

Preliminary Datasheet Revision: January 2016

GaN/SiC Bare Die Power HEMT DC-15 GHz

Features. = +25 C, Vdd= 2V [1], Idd = 55mA [2]

81 GHz to 86 GHz, E-Band Power Amplifier With Power Detector HMC8142

350 W, MHz, 50-Ohm Input/Output Matched, GaN HEMT for C-Band Radar Systems. = 25 C) of Demonstration Amplifier

Ka-Band 2W Power Amplifier

CGY2651UH/C1. Advance Information GHz 10 W Power Amplifier. Description. Features

CMPA1D1E025F. 25 W, GHz, 40 V, Ku-Band GaN MMIC, Power Amplifier. Typical Performance Over GHz (T C. Features.

71 GHz to 76 GHz, 1 W E-Band Power Amplifier with Power Detector ADMV7710

GaAs, phemt, MMIC, Power Amplifier, HMC1126. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION

Part Number: IGN2729M500-IGN2729M500S

HMC906A. Amplifiers - Linear & Power - CHIP. Electrical Specifications, T A. Typical Applications. Features. General Description. Functional Diagram

Advance Datasheet Revision: May 2013

TGF Watt Discrete Power GaN on SiC HEMT

71 GHz to 76 GHz, 1 W E-Band Power Amplifier with Power Detector ADMV7710

Product Data Sheet August 5, 2008

20 GHz to 44 GHz, GaAs, phemt, MMIC, Low Noise Amplifier HMC1040CHIPS

CCharacteristic Symbol Min Typ Max Unit. Adjacent Channel Power Ratio ACPR 30 dbc. Output 0.01% CCDF OPAR 7 db

RF3932D 60W GaN on SiC Power Amplifier Die

DC - 20 GHz Discrete power phemt

DC to 28 GHz, GaAs phemt MMIC Low Noise Amplifier HMC8401

GHz GaAs MMIC Power Amplifier

TEST FREQ. 12 GHz 18 GHz 12 GHz 18 GHz. P1dB Output p1db (Vds = 2V, Id = 10mA) 12 GHz dbm

GaAs, phemt, MMIC, Power Amplifier, 2 GHz to 50 GHz HMC1126

Part Number: IGN2735M250

Simplified Schematic and Pad description DRAIN GATE SOURCE. Description

Features. = +25 C, Vdd = 5V

Absolute Maximum Ratings Parameter Rating Unit Drain Voltage (V D ) 150 V Gate Voltage (V G ) -8 to +2 V Gate Current (I G ) 8 ma Operational Voltage

Electrical Characteristics (Ambient Temperature T = 25 o C) Units GHz db db db db db dbm dbm VDC VDC ma

Innogration (Suzhou) Co., Ltd.

Transcription:

FP48005260 260W, 48V GaN HEMT D Description The FP48005260 is a 260W gallium nitride (GaN) High Electron Mobility Transistor (HEMT). This GaN HEMT is a wideband transistor optimized for 3.5GHz operation in a user-friendly device for high bandwidth applications. Gallium nitride (GaN) HEMT is a device optimized for 5G. GaN HEMT resistance is only 1/10 that of silicon transistors, making it capable of switching frequencies faster for greater energy efficiency.. Applications U/VHF Amplifiers Broadband Amplifiers Base Station Communications Drone, UAV WiMAX, LTE, WCDMA, GSM WPT, V2X Radar application Features Up to 5 GHz Operation 14.0 db Typical Small Signal Gain @ 3.5 GHz 260 W Typical Psat @3.5GHz 48V Operation High Breakdown Voltage High Efficiency Reliability Monitoring Supporting Packaging Information Bare die are shipped in Wafer-level with Expander Ring or Gel-Pak containers. Possible UV Curing for Wafer-level with dicing saw 1 2018.05.24-12:23

Absolute Maximum Ratings (not simultaneous) at 25 C Parameter Parameter Typical Value Units Conditions Threshold voltage @ Id=1mA/mm, Vd=10V V to -3.4 V 25 C Breakdown voltage @ Id=1mA/mm V DG 160 V 25 C Drain-source current, Id @ Vd=10V, Vg=0 I dss 800 ma/mm 25 C Operating Junction Temperature T J 225 C Storage Temperature T STG -65, +150 C Thermal Resistance, Junction to Case (packaged) R θjc C/W Thermal Resistance, Junction to Case (die only) R θjc C/W Mounting Temperature (30 seconds) T S 320 C 30 seconds Electrical Characteristics ((Frequency = 3.5 GHz unless otherwise stated; TC = 25 C) DC Characteristics Parameter Parameter Typical Value Units Conditions Ohmic contact resistance RC 0.3 Ohm-mm 25 C Maximum Drain-source current, Id @ Vd=10V, Vg=1V (1X125μm device) Max. trans-conductance, @ Vd=10V, Vg=-4V ~ -1V (1X125μm device) Maximum Drain-source current, Id @ Vd=10V, Vg=1V (1X125μm device) I dmax 1000 ma/mm 25 C GM_PEAK 290 ms/mm 25 C I dmax 1000 ma/mm 25 C RF Characteristics Small Signal Gain G SS >12 db Saturated Power Output P SAT 260 W Drain Efficiency η >55 % Intermodulation Distortion IM3 <-30 dbc Output Mismatch Stress VSWR 10:1 ψ 2

DIE Dimensions (units in microns) 6893 6470 130 80 50 79 940 89 112 552 83 Overall die size 6893 x 940 (+0/-50) microns, die thickness 100 (+/- 10) microns. All Gate and Drain pads must be wire bonded for electrical connection. Assembly Notes Recommended solder is AuSn (80/20) solder. Refer to ferarf s guide for the Eutectic Die Bond Procedure Vacuum collet is the preferred method of pick-up. The backside of the die is the Source (ground) contact. Die back side gold plating is 5 microns thick minimum. Thermosonic ball or wedge bonding are the preferred connection methods. Gold wire must be used for connections. 3

Typical Performance Simulated Maximum Available Gain (MAG) and K Factor of the WP48005260 VDD = 48 V, IDQ = 1320 ma Intrinsic die parameters - reference planes at centers of gate and drain bonding pads. No wire bonds assumed. Typical Performance Simulated Minimum Noise Figure of the WP48005260 VDD = 48 V, IDQ = 1320 ma 4

Typical Die S-Parameters (Small Signal, VDS = 48 V, IDQ = 1320 ma, magnitude / angle) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 100MHz 0.976668-155.255 28.3582 100.5665 0.003799 10.72547 0.840368-175.964 200MHz 0.975938-167.452 14.40755 92.87321 0.00386 3.19119 0.848269-177.545 300MHz 0.975869-171.584 9.618342 89.17357 0.003865-0.34943 0.850309-177.927 400MHz 0.975928-173.649 7.203394 86.5022 0.003858-2.86173 0.851641-177.997 500MHz 0.976046-174.884 5.746818 84.25091 0.003846-4.9539 0.85292-177.945 600MHz 0.976204-175.702 4.771307 82.21682 0.003831-6.82879 0.854303-177.834 700MHz 0.976395-176.282 4.071318 80.3138 0.003812-8.57252 0.855836-177.694 800MHz 0.976616-176.715 3.543825 78.49963 0.00379-10.2273 0.857528-177.54 900MHz 0.976862-177.049 3.131511 76.75155 0.003765-11.8159 0.859378-177.38 1000MHz 0.977131-177.314 2.79996 75.05647 0.003738-13.3513 0.861377-177.219 1100MHz 0.977422-177.53 2.52726 73.40655 0.003709-14.8415 0.863513-177.062 1200MHz 0.977731-177.709 2.298799 71.7969 0.003677-16.2912 0.865772-176.909 1300MHz 0.978057-177.86 2.104461 70.22443 0.003644-17.7035 0.86814-176.764 1400MHz 0.978397-177.99 1.937018 68.68713 0.003608-19.0805 0.870601-176.626 1500MHz 0.978749-178.103 1.79117 67.18368 0.003572-20.4235 0.873142-176.498 1600MHz 0.979112-178.202 1.662938 65.71317 0.003533-21.7332 0.875746-176.379 1700MHz 0.979483-178.29 1.54928 64.27495 0.003493-23.0105 0.878401-176.269 1800MHz 0.97986-178.37 1.447829 62.86855 0.003452-24.2556 0.881094-176.17 1900MHz 0.980242-178.442 1.356711 61.49357 0.00341-25.4691 0.883811-176.079 2000MHz 0.980627-178.508 1.274428 60.14964 0.003368-26.6512 0.886541-175.999 2100MHz 0.981013-178.569 1.199763 58.83641 0.003324-27.8024 0.889274-175.927 2200MHz 0.9814-178.625 1.131718 57.55354 0.00328-28.9228 0.892001-175.865 2300MHz 0.981785-178.679 1.069468 56.30065 0.003235-30.013 0.894711-175.811 2400MHz 0.982169-178.729 1.01232 55.07733 0.00319-31.0732 0.897399-175.765 2500MHz 0.982549-178.776913 0.959693 53.88315 0.003145-32.1039 0.900056-175.728 2600MHz 0.982924-178.822512 0.91109 52.71765 0.003099-33.1055 0.902677-175.697 2700MHz 0.983295-178.866236 0.866089 51.58033 0.003054-34.0785 0.905256-175.673 2800MHz 0.98366-178.908336 0.824323 50.47068 0.003008-35.0235 0.907791-175.656 2900MHz 0.984019-178.949021 0.785477 49.38814 0.002963-35.9409 0.910275-175.645 3000MHz 0.984372-178.988467 0.749273 48.33215 0.002918-36.8312 0.912708-175.64 3100MHz 0.984717-179.02682 0.71547 47.30213 0.002873-37.6951 0.915086-175.64 3200MHz 0.985054-179.064205 0.683854 46.29748 0.002828-38.5332 0.917407-175.645 3300MHz 0.985384-179.100725 0.654237 45.31758 0.002784-39.3459 0.919671-175.654 3400MHz 0.985707-179.136467 0.626451 44.36183 0.00274-40.134 0.921875-175.667 3500MHz 0.986021-179.171507 0.600346 43.4296 0.002696-40.898 0.924021-175.684 3600MHz 0.986327-179.205906 0.575789 42.52026 0.002653-41.6384 0.926106-175.704 3700MHz 0.986624-179.23972 0.552659 41.6332 0.00261-42.3561 0.928133-175.728 3800MHz 0.986914-179.272993 0.530848 40.76779 0.002568-43.0514 0.9301-175.754 3900MHz 0.987196-179.306 0.510258 39.92342 0.002526-43.725 0.932008-175.783 5

Typical Die S-Parameters (Small Signal, VDS = 48 V, IDQ = 1320 ma, magnitude / angle) Frequency Mag S11 Ang S11 Mag S21 Ang S21 Mag S12 Ang S12 Mag S22 Ang S22 4000MHz 0.987469-179.33807 0.490799 39.09948 0.002485-44.3775 0.933859-175.814 4100MHz 0.987735-179.37 0.472392 38.29537 0.002444-45.0094 0.935652-175.848 4200MHz 0.987992-179.401392 0.454963 37.51051 0.002404-45.6214 0.93739-175.883 4300MHz 0.988242-179.432457 0.438444 36.7443 0.002365-46.214 0.939073-175.92 4400MHz 0.988484-179.46315 0.422775 35.9962 0.002326-46.7876 0.940703-175.958 4500MHz 0.988719-179.49349 0.407899 35.26563 0.002287-47.343 0.94228-175.998 4600MHz 0.988947-179.523491 0.393765 34.55206 0.00225-47.8804 0.943806-176.038 4700MHz 0.989168-179.553168 0.380324 33.85496 0.002212-48.4006 0.945283-176.08 4800MHz 0.989381-179.582531 0.367534 33.17381 0.002176-48.9039 0.946711-176.123 4900MHz 0.989588-179.611593 0.355354 32.50812 0.00214-49.3907 0.948093-176.166 5000MHz 0.989789-179.640364 0.343747 31.8574 0.002104-49.8617 0.94943-176.21 5100MHz 0.989983-179.669 0.332678 31.22117 0.002069-50.3172 0.950722-176.255 5200MHz 0.990171-179.697066 0.322115 30.59898 0.002035-50.7576 0.951973-176.3 5300MHz 0.990353-179.725014 0.312029 29.99039 0.002001-51.1833 0.953182-176.346 5400MHz 0.990529-179.752704 0.302393 29.39496 0.001968-51.5948 0.954351-176.391 5500MHz 0.990699-179.780143 0.29318 28.81229 0.001935-51.9924 0.955482-176.437 5600MHz 0.990864-179.807336 0.284366 28.24196 0.001903-52.3764 0.956576-176.483 5700MHz 0.991024-179.834291 0.275931 27.68358 0.001871-52.7473 0.957634-176.53 5800MHz 0.991179-179.861 0.267852 27.13679 0.00184-53.1054 0.958658-176.576 6000MHz 0.991329-179.887508 0.26011 26.60122 0.00181-53.4509 0.959648-176.622 6100MHz 0.991474-179.913782 0.252689 26.07652 0.00178-53.7842 0.960607-176.668 6200MHz 0.991615-179.939839 0.24557 25.56235 0.00175-54.1056 0.961534-176.714 6300MHz 0.991751-179.965685 0.238738 25.05839 0.001721-54.4154 0.962432-176.76 6400MHz 0.991883-179.991 0.232178 24.56431 0.001692-54.7138 0.9633-176.806 6500MHz 0.992011 179.983238 0.225876 24.07982 0.001664-55.0011 0.964141-176.852 6600MHz 0.992134 179.957997 0.219819 23.60461 0.001636-55.2775 0.964956-176.897 6700MHz 0.992254 179.932948 0.213995 23.13842 0.001609-55.5433 0.965744-176.942 6800MHz 0.992371 179.908088 0.208393 22.68096 0.001582-55.7987 0.966508-176.987 6900MHz 0.992483 179.883412 0.203002 22.23197 0.001556-56.0438 0.967248-177.032 7000MHz 0.992593 179.858915 0.197811 21.7912 0.00153-56.2789 0.967965-177.076 6

Disclaimer Information furnished by FeraRF Ltd. is believed to be accurate and reliable. However, no responsibility is assumed by FeraRF Ltd. for its use, nor for any infringements of patents or other rights of third parties that may result from its use. The information contained is provided as it is" and with all defects, and the whole risk associated with such information is entirely with the user. Specifications subject to change without notice. FeraRF Ltd. and registered trademarks are the property of their respective owners. Customers must search and verify the updated information before placing orders for our products. We makes no guarantee or representation regarding the information contained herein the useing of products for any specific purpose. FeraRF Ltd. products are not warranted or authorized for use as key components in conditions, or other applications where a failure would be expected to cause severe personal injury or death. If you have question, please leave detailed message below. We will respond to your inquiry soon after a careful review Website : http://ferarf.com/contact/ E-mail : ferax@ferarf.com 7