SUM5N3-3LC N-Channel 3-V (D-S) MOSFET with Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) (Ω) (A).3 at V GS = V 5 a 3.7 at V GS =.5 V 8 a D PAK-5 FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode Low Thermal Resistance Package APPLICATIONS Industrial Available RoHS* COMPLIANT D (Tab, 3) 3 5 G () () KELVIN SENSE () SENSE G D S KELVIN S (5) Ordering Information: SUM5N3-3LC-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T C = 5 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS 3 Gate-Source Voltage V GS ± V T C = 5 C 5 a Continuous Drain Current (T J = 75 C) T C = 5 C 3 a A Pulsed Drain Current M Avalanche Current I AR 5 Repetitive Avalanche Energy b L =. mh E AR 3 mj T Maximum Power Dissipation b C = 5 C 83 c P D T A = 5 C.7 d W Operating Junction and Storage Temperature Range T J, T stg - 55 to 75 C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient PCB Mount d R thja 55 C/W Junction-to-Case R thjc.8 Notes: a. Package limited. b. Duty cycle %. c. See SOA curve for voltage derating. d. When mounted on " square PCB (FR- material). * Pb containing terminations are not RoHS compliant, exemptions may apply. Document Number: 78 S-87-Rev. B, -Feb-8
SUM5N3-3LC MOSFET SPECIFICATIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V (BR)DSS V GS = V, = 5 µa 3 V Gate-Threshold Voltage V GS(th) V DS = V GS, S = 5 µa 3 Gate-Body Leakage I GSS V DS = V, V GS = ± V ± na Zero Gate Voltage Drain Current SS V DS = 3 V, V GS = V, T J = 5 C 5 µa V DS = 3 V, V GS = V V DS = 3 V, V GS = V, T J = 75 C 5 On-State Drain Current a (on) V DS = 5 V, V GS = V 5 A Notes: a. Pulse test; pulse width 3 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V GS = V, = 5 A..3 V Drain-Source On-State Resistance a GS = V, = 5 A, T J = 5 C.6. Ω V GS = V, = 5 A, T J = 75 C.8. V GS =.5 V, = A..7 Forward Transconductance a g fs V DS = 5 V, = 5 A 3 S Dynamic b Total Gate Charge c Q g Input Capacitance C iss 96 Output Capacitance C oss V GS = V, V DS = 5 V, f = MHz 38 Reverse Transfer Capacitance C rss 8 35 5 Gate-Source Charge c Q gs V DS = 5 V, V GS = V, = 5 A 7.6 Gate-Drain Charge c Q gd 5.6 Turn-On Delay Time c t d(on) Rise Time c t r V DD = 5 V, R L =.3 Ω 93 8 Turn-Off Delay Time c t d(off) 5 A, V GEN = V, R G =.5 Ω 3 6 Fall Time c t f Source-Drain Diode Ratings and Characteristics T C = 5 C b Continuous Current I S 5 Pulsed Current I SM A Forward Voltage a V SD I F = 5 A, V GS = V.3.6 V Reverse Recovery Time t rr 35 7 ns Peak Reverse Recovery Current I RM(REC) I F = 5 A, di/dt = A/µs.5 A Reverse Recovery Charge Q rr.6 µc Current Sense Characteristics Current Sensing Ratio r = A, V GSS = V, ENSE =. Ω 5 6 Mirror Active Resistance r m(on) V GS = V, = ma 3.5 Ω pf nc ns Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 78 S-87-Rev. B, -Feb-8
SUM5N3-3LC TYPICAL CHARACTERISTICS 5 C, unless otherwise noted 8 V GS = thru 5 V 8 T C = - 55 C 5 C 6 V 6 5 C 3 V 3 5 V DS - Drain-to-Source Voltage (V) Output Characteristics 8 3 5 6 Transfer Characteristics.6 T C = - 55 C.5 - Transconductance (S) g fs 6 5 C 5 C - On-Resistance (Ω)..3.. V GS =.5 V V GS = V 6 8 Transconductance 3. 6 8 On-Resistance vs. Drain Current C - Capacitance (pf) 5 5 C iss - Gate-to-Source Voltage (V) 8 6 V GS = 5 V = 5 A 5 C oss V GS C rss 6 8 3 V DS - Drain-to-Source Voltage (V) Capacitance 5 5 5 3 35 Q g - Total Gate Charge (nc) Gate Charge Document Number: 78 S-87-Rev. B, -Feb-8 3
SUM5N3-3LC TYPICAL CHARACTERISTICS 5 C, unless otherwise noted..8 V GS = V = 5 A - On-Resistance (Normalized).6... - Source Current (A) I S T J = 75 C T J = 5 C.8.6-5 - 5 5 5 75 5 5 75 T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature THERMAL RATINGS 6.3.6.9..5 V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 3 Limited by *. s. s 5 5 75 5 5 75 T C - Case Temperature ( C) Maximum Drain Current vs. Case Temperature T C = 5 C Single Pulse. V DS - Drain-to-Source Voltage (V) * V GS minimum V GS at which is specified Safe Operating Area. s. s DC Normalized Effective Transient Thermal Impedance. Duty Cycle =.5...5. Single Pulse. -5 - -3 - - Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 3 Document Number: 78 S-87-Rev. B, -Feb-8
SUM5N3-3LC SENSE DIE TYPICAL CHARACTERISTICS 5 C, unless otherwise noted - On-Resistance (Ω) 8 6 V GS =.5 V V GS = V - On-Resistance (Ω) 8 6 = ma....6.8. I SENSE (A) On-Resistance vs. Sense Current 6 8 On-Resistance vs. Gate-Source Voltage 8 Ratio 6 G V G SENSE S KELVIN 8 6 Current Ratio (I (MAIN)/IS ) vs. Gate-Source Voltage (Figure ) Figure. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http:///ppg?78 Document Number: 78 S-87-Rev. B, -Feb-8 5
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