General Description MagnaChip s IGBT Module 7DM- package devices are optimized to reduce losses and switching noise in high frequency power conditioning electrical systems. These IGBT Module series are ideally suited for IH, High Power inverters, Motors drives and other applications where switching lossess are significant portion of the total losses. MPMB75BRH NPT & Rugged Type IGBT Module Features B CES = Low Conductionn Loss : CE(sa at) =.7 (typ.) Fast & Soft nti-parallel FWDD Short circuit rated : Min. uss at = Isolation Type Package P pplications Induction Heating, Motor Drives, High Power Inverters Welding Machine, UPS MPMB75BRH NPT & Rugged Type IGBT Module 7DM- E393 Equivalent Circuit bsolute Maximum Ratings @ @Tc = 5 o C (Per Leg) Characteristicss Symbol Rating Unit Collector-Emitter oltage CES Gate- oltage GES ± Continuous Collector Current =5 o C =8 o C I C 75 Pulsed Collector Current () I CM 5 Diode Continuous Forward Current =8 o C I F 75 Diode Maximum Forward Current I FM 5 Power Dissipation =5 o C P D 5 W Short Circuit Withstand Time T SC us Operating Junction Temperature Tj -55~5 o C Storage Temperature Range T stg -55~5 o C Isolation oltage C minute iso 5 Mounting screw Torque : M - N.m Note : () Repetitive rating : Pulse width limitedd by max. junction temperaturee Dec.ersion.
Electrical Characteristics of IGBT @ =5 o C(unless otherwise specified) Static Characteristics Characteristics Symbol Test Condition Min. Typ. Max. Unit Collector-Emitter Breakdown oltage B CES I C = m, GE = - - Gate Threshold oltage GE(th) CE = GE, I C = m.5-7.5 Collector Cut-Off Current I CES CE =, GE = - - m Gate Leakage Current I GES GE = ±, CE = - - ±5 n Collector-Emitter saturation voltage Dynamic Characteristics CE(sat) GE = 5, I C =75 -.7 3. = - 3.3 - Total Gate Charge Q g - 3 - Gate-Emitter Charge Q ge CC =, I C = 75, GE = ±5-33 - Gate-Collector Charge Q gc - 77 - Input Capacitance C ies - 8 - Output Capacitance C oes CE = 3, GE =, f =.MHz - - Reverse Transfer Capacitance C res - 5 -- nc pf MPMB75BRH NPT & Rugged Type IGBT Module Turn-On Delay Time t d(on) - 5 - Rise Time t r - 5 - Turn-Off Delay Time t CC =, I C = 75, d(off) - 75 - ns Fall Time t f GE =±5, - - Turn on Switching Loss E on R G =.Ω, Inductive Load -. - mj Turn off Switching Loss E off - 3.5 - mj Total Switching Loss E ts -. - mj Short Circuit Withstand Time T sc cc =, GE = ±5 R G = Ω @ Tc = - - us Electrical Characteristics of FRD @Ta =5 o C(unless otherwise specified) Diode Forward oltage FM I F =75 -.9 3.5 = -.3 - Diode Reverse Recovery Time t rr - 8 - = ns Diode Peak Reverse Recovery Current I rr I F =75, R = di/dt = -5/uS - 3.5 - = - - Diode Reverse Recovery Charge Q rr - - = - - nc Dec.ersion.
Thermal Characteristics and Weight Characteristics Symbol Min. Typ. Max. Unit Junction-to-Case(IGBT Part) R θjc - -.5 /W Junction-to-Case(DIODE Part) R θjc - -.5 /W Case-to-Sink ( Conductive grease applied) R θcs.5 - - /W Weight of Module Weight - - g MPMB75BRH NPT & Rugged Type IGBT Module Dec.ersion. 3
Collector Current, I C [] Collector Current,I C [] 3 5 5 5 Common Emitter 5 3 5 3 5 5 5 Collector-Emitter oltage, CE 8 Fig. Typical Output Characteristics =5 Collector Current,I C [] Gate-Emitter oltage, GE 3 5 5 5 Common Emitter =5 5 3 5 8 8 Collector - Emitter oltage, GE Fig. Typical Output Characteristics CE =,I C =75 MPMB75BRH NPT & Rugged Type IGBT Module 3 5 Collector-Emitter oltage, CE 3 Gate Charge, Qg[nC] Fig.3 Typical Saturation oltage Characteristics Fig. Gate Charge Characteristics 9 8 7 Eon( =5 ) Eon( =5 ) 5 Eoff( =5 ) Eoff( =5 ) Eon[mJ] 5 Eoff[mJ] 3 3 5 5 5 R G [Ω ] Fig.5 Typical turn-on energy = f(r G ) GE = ±5, IC = 75, CE = 5 5 5 R G [Ω ] Fig. Typical turn-off energy = f(r G ) GE = ±5, IC = 75, CE = Dec.ersion.
Collector Current,I C [] Thermal Response Zthjc[ /W] 8 8.. Fig.7 Rated Current vs. Case Temperature FRD IGBT Case Temperatute, Tc[ ] Fig.9 Transient Thermal Impedance T J = 5 GE 5 E-3 E-5 E- E-3.. Rectangular Pulse Duration Time[sec] Power Dissipation[W] Forward Current, I F [] 5 3 8 3 5 5 5 [ ] Fig.8 Power Dissipation vs. Case Temperature =5 Fig. Forward Characteristics T J 5 P D =f( ) 3 5 Forward Drop oltage, F MPMB75BRH NPT & Rugged Type IGBT Module Dec.ersion. 5
Package Dimension 7DM- Dimensions are in millimeters, unless otherwise specified MPMB75BRH NPT & Rugged Type IGBT Module Dec.ersion.
MPMB75BRH NPT & Rugged Type IGBT Module DISCLIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Dec.ersion. 7