MTP IGBT Power Module Primary Dual Forward VS5MTWDF MTP (Package example) PRIMARY CHARACTERISTICS IGBT, T J = 5 C V CES V V CE(on) at 25 C at 8 A 2. V I C at 8 C 9 A FRED Pt AP DIODE, T J = 5 C V RRM V I F(DC) at 8 C A V F at 25 C at 5 A. V FRED Pt CHOPPER DIODE, T J = 5 C V R V I F(DC) at 8 C 22 A V F at 25 C at A 2.7 V Speed 3 khz to 5 khz Package MTP Circuit configuration Dual forward FEATURES Buck PFC stage with warp 3 IGBT and FRED Pt hyperfast diode Integrated thermistor Isolated baseplate UL approved file E7899 Very low stray inductance design for high speed operation Ultrafast switching IGBT Designed and qualified for industrial level Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 BENEFITS Lower conduction losses and switching losses Optimized for welding, UPS, and SMPS applications PCB solderable terminals Direct mounting to heatsink ABSOLUTE MAXIMUM RATINGS IGBT Antiparallel diode PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Collector to emitter voltage V CES V Gate to emitter voltage V GE ± 2 V Maximum continuous collector current T C = 25 C 38 I at V GE = 5 V, T J = 5 C maximum C T C = 8 C 9 A Pulse collector current I () CM 33 Clamped inductive load current I LM 33 Maximum power dissipation P D T C = 25 C 543 W Repetitive peak reverse voltage V RRM V Maximum continuous forward current T C = 25 C 7 I T J = 5 C maximum F(DC) T C = 8 C A ms sine or ms rectangular Maximum nonrepetitive peak current I FSM pulse, Maximum power dissipation P D T C = 25 C 24 W Revision: 8Mar8 Document Number: 957 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS5MTWDF ABSOLUTE MAXIMUM RATINGS Chopper diode PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Repetitive peak reverse voltage V RRM V Maximum continuous forward current T C = 25 C 33 I T J = 5 C maximum F T C = 8 C 22 A ms sine or ms rectangular Maximum nonrepetitive peak current I FSM 35 pulse, Maximum power dissipation P D T C = 25 C 57 W Maximum operating junction T temperature J 5 C Storage temperature range T Stg 4 to +5 T Isolation voltage V J = 25 C, all terminals shorted, ISOL 35 V f = 5 Hz, t = s Notes Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur () V CC = 3 V, V GE = 5 V, L = 5 μh, R g = 4.7, T J = 5 C ELECTRICAL SPECIFICATIONS ( unless otherwise noted) IGBT AP diode Chopper diode PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Collector to emitter breakdown voltage BV CES V GE = V, I C =.5 ma V Temperature coefficient of breakdown voltage V BR(CES) /T J I C =. ma (25 C to 25 C). V/ C V GE 5 V, I C = 8 A 2. 2.48 Collector to emitter voltage V CE(on) V GE = 5 V, l C = 8 A, 2.43 V Gate threshold voltage V GE(th) V CE = V GE, I C = 75 μa 3.2 4.4.2 V Temperature coefficient of threshold voltage V GE(th) /T J V CE = V GE, I C =. ma (25 C to 25 C) 2 mv/ C Forward transconductance g fe V CE = 2 V, I C = 8 A 97 S Transfer characteristics V GE V CE = 2 V, I C = 8 A. V Collector to emitter leakage current I CES V GE = V, V CE = V,. ma V GE = V, V CE = V 8 μa Gate to emitter leakage I GES V GE = ± 2 V ± 25 na Blocking voltage BV RRM I R = μa V I F = 5 A..27 Forward voltage drop V FM V I F = 5 A,.9 I F = A 2.7 2.53 Forward voltage drop V FM I F = A,.87 Blocking voltage BV RM I R = μa V RRM = V 2 7 Reverse leakage current I RM V RRM = V, 2 V μa Revision: 8Mar8 2 Document Number: 957 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS5MTWDF SWITCHING CHARACTERISTICS ( unless otherwise noted) PFC IGBT PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Total gate charge (turnon) Gate to emitter charge (turnon) Gate to collector charge (turnon) Q g Q ge Q gc IC = A V CC = 4 V V GE = 5 V 54 84 92 Turnon switching loss E on.5 Turnoff switching loss E off 2. Total switching loss E tot I C = 5 A, V CC = 3 V, 3.7 Turnon delay time t d(on) V GE = 5 V, R g = 4.7, 73 Rise time t r L = 5 μh, () 79 Turnoff delay time t d(off) 374 Fall time t f Turnon switching loss E on. Turnoff switching loss E off 2.75 Total switching loss E tot I C = 5 A, V CC = 3 V, 3.4 Turnon delay time t d(on) V GE = 5 V, R g = 4.7, 7 Rise time t r L = 5 μh, () 8 Turnoff delay time t d(off) 389 Fall time t f 9 Input capacitance C ies VGE = V 4 2 Output capacitance C oes V CC = 3 V Reverse transfer capacitance C res f = MHz 74 Reverse bias safe operating area Note () Energy losses include tail and diode reverse recovery RBSOA I C = 33 A, V CC = 3 V, V P = V, R g = 4.7, V GE = 5 V, L = 5 μh, T J = 5 C Full square nc mj ns mj ns pf RECOVERY PARAMETER ( unless otherwise noted) AP diode Chopper diode PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Peak reverse recovery current I rr IF = A A Reverse recovery time t rr di/dt = 2 A/μs 4 ns Reverse recovery charge Q rr V rr = 2 V 537 nc Peak reverse recovery current I rr IF = 5 A 4.7 A Reverse recovery time t rr di/dt = 2 A/μs 73 ns Reverse recovery charge Q rr V rr = 2 V 7 nc Peak reverse recovery current I rr IF = 5 A.3 A Reverse recovery time t rr di/dt = 2 A/μs 4 ns Reverse recovery charge Q rr V rr = 2 V, 7 nc THERMISTOR ELECTRICAL CHARACTERISTICS ( unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Resistance R 3 B value B /T J = 85 C 4 K Revision: 8Mar8 3 Document Number: 957 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS5MTWDF THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS IGBT Junction to case IGBT thermal resistance.23 AP FRED Pt Junction to case diode thermal resistance 5. R thjc FRED Pt Junction to case diode thermal resistance 2.2 C/W Case to sink, flat, greased surface per module R thcs. C/W Mounting torque ± % to heatsink () 4 Nm Approximate weight 5 g Note () A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound Allowable Case Temperature ( C) 4 2 8 4 2 2 4 8 2 4 Fig. Allowable Case Temperature vs. Continuous Collector Current (Maximum IGBT Continuous Collector Current vs. Case Temperature) DC I C Continuous Collector Current (A) 3 25 2 5 5. 2. 3. 4. 5.. V CE (V) T J = 5 C Fig. 3 I C vs. V CE (Typical IGBT Output Characteristics, V GE = 5 V) 3 25 2 V GE = 2 V V GE = 5 V V GE = 8 V V GE = 9 V 5 5.. 2. 3. 4. 5.. V CE (V) V CE (V) Fig. 2 I C vs. V CE (IGBT Reverse BIAS SOA, T J = 5 C, V GE = 5 V) Fig. 4 I C vs. V CE (Typical IGBT Output Characteristics, ) Revision: 8Mar8 4 Document Number: 957 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS5MTWDF www.vishay.com 4 2 8 4 2 V CE = 2 V 3 4 5 7 8 I F (A) 9 8 7 5 4 3 2 T J = 5 C.5..5 2. 2.5 3. V GE (V) V FM (V) Fig. 5 I C vs. V GE (Typical IGBT Transfer Characteristics) Fig. 8 I F vs. V FM (Typical Antiparallel Diode Forward Characteristics) V GEth (V) 5.5 5. 4.5 4. 3.5 3. 2.5 2..2.3.4.5..7.8.9. I C (ma) Fig. V GEth vs. I C (Typical IGBT Gate Threshold Voltage) Allowable Case Temperature ( C) 4 2 8 4 2 2 4 8 2 4 8 2 Fig. 9 Allowable Case Temperature vs. Continuous Forward Current (Maximum Antiparallel Diode Continuous Forward Current vs. Case Temperature) DC I F Continuous Forward Current (A). T J = 5 C 4 2 I CES (ma)... 2 3 4 5 I F (A) 8 4 2 T J = 5 C.5..5 2. 2.5 3. 3.5 V CES (V) V FM (V) Fig. 7 I CES vs. V CES (Typical IGBT Zero Gate Voltage Collector Current) Fig. I F vs. V FM (Typical Chopper Diode Forward Characteristics) Revision: 8Mar8 5 Document Number: 957 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS5MTWDF Allowable Case Temperature ( C) 4 2 8 4 2 5 5 2 25 3 35 4 I F Continuous Forward Current (A) Fig. Allowable Case Temperature vs. Continuous Forward Current (Maximum Chopper Diode Continuous Forward Current vs. Case Temperature) DC Switching Time (ns) t d(off) t d(on) t f t r 2 4 8 2 4 Fig. 4 Switching Time vs. I C (Typical IGBT Switching Time vs. I C ), V CC = 3 V, R g = 4.7, V GE = 5 V, L = 5 μh. T J = 5 C 9 8 I RM (ma).. Energy (mj) 7 5 4 3 Eoff Eon 2. 2 3 4 5 5 5 2 25 3 35 4 45 5 V R (V) R g (Ω) Fig. 2 I RM vs. V R (Typical Chopper Diode Reverse Leakage Current) Fig. 5 Energy Loss vs. R g (Typical IGBT Energy Loss vs. R g ), V CC = 3 V, I C = 5 A, V GE = 5 V, L = 5 μh 3 2.5 Energy (mj) 2.5.5 Eoff Eon Switching Time (ns) t d(off) t d(on) t r t f 2 4 8 2 4 5 5 2 25 3 35 4 45 5 R g (Ω) Fig. 3 Energy Loss vs. I C (Typical IGBT Energy Loss vs. I C ), V CC = 3 V, R g = 4.7, V GE = 5 V, L = 5 μh Fig. Switching Time vs. R g (Typical IGBT Switching Time vs. R g ), V CC = 3 V, I C = 5 A, V GE = 5 V, L = 5 μh Revision: 8Mar8 Document Number: 957 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS5MTWDF 2 2 8 8 t rr (ns) 4 2 t rr (ns) 4 2 8 8 2 3 4 5 Fig. 7 t rr vs. di F /dt (Typical Antiparallel Diode Reverse Recovery Time vs. di F /dt) V rr = 2 V, I F = A 4 2 3 4 5 Fig. 2 t rr vs. di F /dt (Typical Chopper Diode Reverse Recovery Time vs. di F /dt) V rr = 2 V, I F = 5 A 3 2 I rr (A) 28 2 24 22 2 8 4 I rr (A) 8 4 2 8 2 8 4 2 4 2 3 4 5 2 3 4 5 Fig. 8 I rr vs. di F /dt (Typical Antiparallel Diode Reverse Recovery Current vs. di F /dt) V rr = 2 V, I F = A Fig. 2 I rr vs. di F /dt (Typical Chopper Diode Reverse Recovery Current vs. di F /dt) V rr = 2 V, I F = 5 A 9 2 7 5 9 Q rr (nc) 3 9 Q rr (nc) 8 7 5 4 7 3 5 2 3 2 3 4 5 2 3 4 5 Fig. 9 Q rr vs. di F /dt (Typical Antiparallel Diode Reverse Recovery Charge vs. di F /dt) V rr = 2 V, I F = A Fig. 22 Q rr vs di F /dt (Typical Chopper Diode Reverse Recovery Charge vs. di F /dt) V rr = 2 V, I F = 5 A Revision: 8Mar8 7 Document Number: 957 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS5MTWDF Z thjc Thermal Impedance Junction to Case ( C/W)..5..2..5.2. DC...... t Rectangular Pulse Duration (s) Fig. 23 Z thjc vs. t Rectangular Pulse Duration (Maximum Thermal Impedance Z thjc Characteristics (IGBT)) Z thjc Thermal Impedance Junction to Case ( C/W)..5.2..5.2. DC...... t Rectangular Pulse Duration (s) Fig. 24 Z thjc vs. t Rectangular Pulse Duration (Maximum Thermal Impedance Z thjc Characteristics (Chopper Diode)) CIRCUIT CONFIGURATION E F Q A7 E D D3 Th I L E7 G D2 G7 M7 A B Q4 D4 M2 M3 Revision: 8Mar8 8 Document Number: 957 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS5MTWDF ORDERING INFORMATION TABLE Device code VS 5 MT W DF 2 3 4 5 product 2 3 4 5 Current rating (5 = 5 A) Essential part number (MT = MTP package) Voltage code x = voltage rating (example: = V) Die IGBT technology (W = warp speed IGBT) Circuit configuration (DF = dual forward) Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?95383 Revision: 8Mar8 9 Document Number: 957 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Outline Dimensions MTP Full Pin DIMENSIONS in millimeters 3. 2 ±.3 39.5 ±.3 2. ±.3 2..5 Ø. ±.25 z detail 2.5 ±. 3 7 ±.3 Use Self Tapping Screw 45 ±. or M2.5 x X. e.g. M2.5 x or M2.5 x 8.8 Ra 3.5 ±.5 according to PCB thickness used.3 48.7 ±.3 7.4 2. ±.5 4. A B C D E F G H I L M 9.8 ±. 45 2 3 4 5 7 X 5.2 7. 5.2 22.8 33.2 ±.3 3.8 ±.5 Ø 5 (x 4) 27.5 ±.3 Ø 2. (x 4) 2 R 2. (x 2) 8 24 3 PINS POSITION WITH TOLERANCE Ø. Revision: 4Sep Document Number: 95383 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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