ST300S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center amplifying gate Hermetic metal case with ceramic insulator International standard case TO-209AE (TO-118) Threaded studs UNF 3/4-16UNF2A or ISO M24x1.5 Compression Bonded Encapsulation for heavy duty operations such as severe thermal cycling 300A Typical Applications DC motor controls Controlled DC power supplies AC controllers Major Ratings and Characteristics Parameters ST300S Units I T(AV) 300 A @ T C 75 C I T(RMS) 470 A I TSM @ 50Hz 8000 A @ 60Hz 8380 A I 2 t @ 50Hz 320 KA2 s @ 60Hz 292 KA 2 s V DRM /V RRM 400 to 2000 V t q typical µs - 40 to 125 C case style TO-209AE (TO-118) 1
ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM, max. repetitive V RSM, maximum non- I DRM /I RRM max. Type number Code peak and off-state voltage repetitive peak voltage @ max V V ma 04 400 500 08 800 900 ST300S 12 1200 1300 50 16 1600 1700 18 1800 1900 20 2000 2 On-state Conduction I T(AV) Max. average on-state current 300 A 180 conduction, half sine wave @ Case temperature 75 C I T(RMS) Max. RMS on-state current 470 A DC @ 64 C case temperature I TSM Max. peak, one-cycle 8000 t = 10ms No voltage non-repetitive surge current 8380 t = 8.3ms reapplied 6730 A t = 10ms % V RRM 7040 t = 8.3ms reapplied Sinusoidal half wave, I 2 t Maximum I 2 t for fusing 320 t = 10ms No voltage Initial max. 292 t = 8.3ms reapplied KA 2 s 226 t = 10ms % V RRM 207 t = 8.3ms reapplied I 2 t Maximum I 2 t for fusing 3200 KA 2 s t = 0.1 to 10ms, no voltage reapplied V T(TO)1 Low level value of threshold 0.97 voltage V (16.7% x π x I T(AV) < I < π x I T(AV) ), max. V T(TO)2 High level value of threshold voltage 0.98 (I > π x I T(AV) ), max. r t1 Low level value of on-state slope resistance 0.74 mω (16.7% x π x I T(AV) < I < π x I T(AV) ), max. r t2 High level value of on-state slope resistance 0.73 (I > π x I T(AV) ), max. V TM Max. on-state voltage 1.66 V I pk = 940A, max, t p = 10ms sine pulse I H Maximum holding current 600 I L Typical latching current 0 ma = 25 C, anode supply 12V resistive load 2
Switching di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, t 1µs 0 A/µs r of turned-on current max, anode voltage 80% V DRM t d Typical delay time 1.0 Gate current 1A, di /dt = 1A/µs g V d = 0.67% V µs DRM, = 25 C t q Typical turn-off time I TM = 550A, max, di/dt = 40A/µs, V R = 50V dv/dt = 20V/µs, Gate 0V Ω, t p = 500µs Blocking dv/dt I RRM I DRM Maximum critical rate of rise of off-state voltage Max. peak reverse and off-state leakage current 500 V/µs max. linear to 80% rated V DRM 50 ma max, rated V DRM /V RRM applied Triggering P GM Maximum peak gate power 10.0 max, t 5ms p P G(AV) Maximum average gate power 2.0 W max, f = 50Hz, d% = 50 I GM Max. peak positive gate current 3.0 A max, t 5ms p +V GM Maximum peak positive gate voltage 20 -V GM Maximum peak negative gate voltage 5.0 V max, t 5ms p TYP. I GT DC gate current required 200 - = - 40 C to trigger 50 200 - ma = 25 C = 125 C V GT DC gate voltage required 2.5 - = - 40 C to trigger 1.8 1.1 3 - V = 25 C = 125 C I GD DC gate current not to trigger 10.0 ma V GD DC gate voltage not to trigger 0.25 V max Max. required gate trigger/ current/ voltage are the lowest value which will trigger all units 12V anode-to-cathode applied Max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated V DRM anode-to-cathode applied 3
Thermal and Mechanical Specification Max. operating temperature range -40 to 125 C T Max. storage temperature range -40 to 150 stg R thjc Max. thermal resistance, 0.10 DC operation junction to case K/W R thcs Max. thermal resistance, 0.03 Mounting surface, smooth, flat and greased case to heatsink T Mounting torque, ± 10% 48.5 Nm Non lubricated threads (425) (lbf-in) wt Approximate weight 535 g Case style TO - 209AE (TO-118) See Outline Table R thjc Conduction (The following table shows the increment of thermal resistence R thjc when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions 180 0.011 0.008 max. 120 0.013 0.014 90 0.017 0.018 K/W 60 0.025 0.026 30 0.041 0.042 Ordering Information Table Device Code ST 30 0 S 20 P 0 1 2 3 4 5 6 7 8 1 - Thyristor 2 - Essential part number 3-0 = Converter grade 4 - S = Compression bonding Stud 5 - Voltage code: Code x = V RRM (See Voltage Rating Table) 6 - P = Stud base 16UNF threads M = Stud base metric threads (M24 x 1.5) 7-0 = Eyelet terminals (Gate and Auxiliary Cathode Leads) 1 = Fast - on terminals (Gate and Auxiliary Cathode Leads) 3 = Threaded top terminal 3/8" 24UNF-2A 8 - Critical dv/dt: None = 500V/µsec (Standard value) L = 0V/µsec (Special selection) 4
Outline Table CERAMIC HOUSING RED SILICON RUBBER 245 (9.65) 255 (10.04) 38 (1.50) DIA. RED SHRINK 22 (0.87) 10.5 (0.41) NOM. 4.3 (0.17) DIA. RED CATHODE WHITE SHRINK WHITE GATE FLEXIBLE LEAD 245 (9.65) ± 10 (0.39) C.S. 50mm2 (0.078 s.i.) 4.5 (0.18) 9.5 (0.37) MIN. 22 (0.86) MIN. Fast-on Terminals AMP. 280000-1 REF-250 27.5 (1.08) SW 45 21 (0.82) 47 (1.85) 3/4"16 UNF-2A 49 (1.92) Case Style TO-209AE (TO-118) All dimensions in millimeters (inches) * FOR METRIC DEVICE: M24 X 1.5 - LENGHT SCREW 21 (0.83) CERAMIC HOUSING 17 (0.67) DIA. 3/8"-24UNF-2A 25 (0.98) Case Style TO-209AE (TO-118) with top thread terminal 3/8" All dimensions in millimeters (inches) 27.5 (1.08) 77.5 (3.05) 80.5 (3.17) 38 (1.5) DIA. 21 (0.83) 47 (1.85) SW 45 3/4"-16UNF-2A * * FOR METRIC DEVICE: M24 x 1.5 - LENGHT SCREW 21 (0.83) 5
Maximum Allowable Case Temperature ( C) 130 R (DC) = 0.10 K/W thjc 120 110 Conduction Angle 30 90 60 90 120 80 180 70 0 50 150 200 250 300 350 Average On-state Current (A) Maximum Allowable Case Temperature ( C) 130 120 110 90 R (DC) = 0.10 K/W thjc Conduction Period 80 30 60 70 90 120 180 DC 60 0 200 300 400 500 Average On-state Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 480 440 400 360 320 280 240 200 160 120 80 40 180 120 90 60 30 RMS Limit Conduction Angle T = 125 C J 0.08 K/W 0.12 K/W 0.2 K/W 0.3 K/W 0.4 K/W 0.6 K/W 1.2 K/W R = 0.03 K/W - Delta R 0 0 40 80 120 160 200 240 280 320 25 50 75 125 Average On-state Current (A) Maximum Allowable Ambient Temperature ( C) thsa Fig. 3 - On-state Power Loss Characteristics Maximum Average On-state Power Loss (W) 650 600 550 500 450 400 DC 180 120 90 60 30 R = 0.03 K/W - Delta R thsa 0.08 K/W 0.12 K/W 350 300 RMS Limit 250 Conduction Period 200 150 = 125 C 50 0 0 200 300 400 500 25 50 75 125 Average On-state Current (A) Maximum Allowable Ambient Temperature ( C) 0.2 K/W 0.3 K/W 0.6 K/W 1.2 K/W 6 Fig. 4 - On-state Power Loss Characteristics
Peak Half Sine Wave On-state Current (A) 7500 7000 6500 6000 5500 5000 4500 4000 3500 At Any Rated Load Condition And With Rated V Applied Following Surge. RRM Initial = 125 C @ 60 Hz 0.0083 s @ 50 Hz 0.0 s 3000 1 10 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 00 Peak Half Sine Wave On-state Current (A) 8500 Maximum Non Repetitive Surge Current 8000 Versus Pulse Train Duration. Control 7500 Of Conduction May Not Be Maintained. 7000 Initial = 125 C No Voltage Reapplied 6500 Rated V Reapplied RRM 6000 5500 5000 4500 4000 3500 3000 0.01 0.1 1 Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 0 T = 25 C J T = 125 C J 0 1 2 3 4 5 6 7 8 9 Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics Transient Thermal Impedance Z (K/W) thjc 1 Steady State Value R thjc= 0.10 K/W (DC Operation) 0.1 0.01 0.001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 8 - Thermal Impedance Z thjc Characteristic 7
Instantaneous Gate Voltage (V) 10 1 Rectangular gate pulse a) Recommended load line for rated di/dt : 20V, 10ohms; tr<=1 µs b) Recommended load line for <=30% rated di/dt : 10V, 10ohms tr<=1 µs (b) Tj=125 C Tj=25 C Tj=-40 C VGD IGD 0.1 Device: Frequency Limited by PG(AV) 0.001 0.01 0.1 1 10 (a) Instantaneous Gate Current (A) (1) PGM = 10W, tp = 4ms (2) PGM = 20W, tp = 2ms (3) PGM = 40W, tp = 1ms (4) PGM = 60W, tp = 0.66ms (1) (2) (3) (4) Fig. 9 - Gate Characteristics 8