µclamp Description The µclamp TVS diodes are designed for automobile applications and qualifi ed to AECQ1 Grade3. They offer superior electrical characteristics such as lower clamping voltage and no device degradation when compared to other technologies. They are designed to protect sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD), lightning, electrical fast transients (EFT), and cable discharge events (CDE). The µclamp 31PQ is constructed using Semtech s proprietary EPD process technology. The EPD process provides low standoff voltages with signifi cant reductions in leakage currents and capacitance over siliconavalanche diode processes. They feature a true operating voltage of 3. volts for superior protection when compared to traditional pn junction devices. The µclamp31pq is in a 2pin SLP16P2 package measuring 1. x.6 x.5mm. The leads are spaced at a pitch of.65mm and are fi nished with leadfree NiPdAu. Each device will protect one line operating at 3. volts. It gives the designer the fl exibility to protect single lines in applications where arrays are not practical. They may be used to meet the ESD immunity requirements of IEC 6142, Level 4 (±15kV air, ±8kV contact discharge) and above. The combination of small size and high ESD surge capability makes them ideal for use in automobile applications. The µclamp31pq is qualifi ed to AECQ1 Grade 3. Features µclamp31pq Low Voltage µclamp for ESD and CDE Protection u Transient protection for data lines to IEC 6142 (ESD) IEC 6144 (EFT) Cable Discharge Event (CDE) u Ultrasmall package u Protects one data line u Low clamping voltage u Working voltage: 3.V u Low leakage current u Solidstate siliconavalanche technology u AECQ1 Grade 3 Qualifi ed Mechanical Characteristics u SLP16P2 package u PbFree, Halogen Free, RoHS/WEEE Compliant u Nominal Dimensions: 1. x.6 x.5 mm u Lead Finish: NiPdAu u Molding compound fl ammability rating: UL 94V u Marking: Marking code, cathode band u Packaging: Tape and Reel Applications u Automobile Applications u Cellular Handsets & Accessories u Notebooks & Handhelds u Portable Instrumentation u Digital Cameras u Peripherals u MP3 Players Package Dimensions Schematic & Pin Configuration 9/29/214 1
µclamp31pq Absolute Maximum Ratings Rating Symbol Value Units Peak Pulse Power (tp = 8/2µs) P PK 4 W Peak Pulse Current (tp = 8/2µs) I PP 5 A ESD per IEC 6142 (Air) (1) ±3 V ESD per IEC 6142 (Contact) (1) ESD ±25 Operating Temperature T J 4 to +85 O C Storage Temperature T STG 55 to +15 O C Notes: (1): ESD Gun return path to Ground Reference Plane (GRP) kv Electrical Characteristics (T=25 O C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Units Reverse StandOff Voltage V RWM 3. V PunchThrough Voltage V PT I PT = 2μA 3.1 3.9 4.6 V SnapBack Voltage V SB I SB = 5mA 2.8 Reverse Leakage Current I R V RWM = 3.V.5.5 μa Clamping Voltage V C I PP = 1A, tp = 8/2µs 5.5 V Clamping Voltage V C I PP = 5A, tp = 8/2µs 8. V Reverse Clamping Voltage V CR I PP = 1A, tp = 8/2µs 2.4 V Junction Capacitance C J I/O pin to GND f = 1MHz V R = V 25 3 V R = 3.V 18 pf 214 Semtech Corporation. 2
µclamp31pq Typical Characteristics NonRepetative Peak Pulse Power vs. Pulse Time Power Derating Curve Peak Pulse Power P PP (W) 1 1 1 % of Rated Power or I PP 12 1 8 6 4 2 1.1 1 1 1 1 Pulse Duration tp (µs) DR44124 DR451425858515 25 5 75 1 Ambient Temperature T A ( O C) Reverse Leakage Current vs. Temperature Capacitance vs. Temperature 4 3 Leakage Current Ir (na) 3 2 1 Vr = 3V Vr = 1V Capacitance (pf) 25 2 15 1 5 LG V Bias LG 3V Bias AR_UC31PQ_IRvTvV_R 5 5 1 Temperature ( O C) AR_UC31PQ_CAPvTvV_R 5 5 1 Temperature ( O C) ESD Clamping Voltage +8kV Contact ESD Clamping Voltage 8kV Contact 6 2 Clamping Voltage V C (V) 4 2. Discharge to pin2 Waveform IEC6142 +8kV. Measured with and corrected for 5, 2dB Attenuator. 5 Scope Input Impedance, 2GHz BW. ESD Gun Return connected to ESD Ground Plane. Clamping Voltage V C (V) 2 4 6 8. Discharge to pin2 Waveform IEC6142 +8kV. Measured with and corrected for 5, 2dB Attenuator. 5 Scope Input Impedance, 2GHz BW. ESD Gun Return connected to ESD Ground Plane. AR_UC31PQ_+8kV_ESD 2 2 2 4 6 8 1 Time (ns) AR_UC31PQ_+8kV_ESD 1 2 2 4 6 8 1 Time (ns) 214 Semtech Corporation. 3
µclamp31pq Typical Characteristics (Continued) 8x2us Clamping Performance Reverse 8x2us Clamping Performance Forward 12 12 1 8 Waveform Parameters: Pin2 to Pin1 1 8 Waveform Parameters: Pin1 to Pin2 Clamping Voltage V C (V) 6 4 2 Clamping Voltage V C (V) 6 4 2 AR_UC31PQ_8x2 REV_R 5 1 15 2 Peak Pulse Current I PP (A) AR_UC31PQ_8x2 FRWD_R 1 2 3 4 5 6 7 Peak Pulse Current I PP (A) TLP Characteristics Reverse TLP Characteristics Forward 3 25 2 Pin 2 1 Positive pulse TLP Parameters: tp = 1ns tr = 2ps R DYN =.31 (I TLP = 4A to 16A) 5 1 Pin 2 1 Negative pulse TLP Parameters: tp = 1ns tr = 2ps R DYN =.95 (I TLP = 4A to 16A) TLP Current (A) 15 1 TLP Current (A) 15 5 2 AR_UC31PQ_TLP+_R 2 4 6 8 1 12 14 16 TLP Voltage (V) AR_UC31PQ_TLP_R 25 25 2 15 1 5 TLP Voltage (V) 214 Semtech Corporation. 4
µclamp31pq Applications Information Device Connection Options The µclamp31pq is designed to protect one data or I/O line operating at 3. volts. It will present a high impedance to the protected line up to 3. volts. It will turn on when the line voltage exceeds the punch thru voltage. The device is unidirectional and may be used on lines where the signal polarity is above ground. The cathode band should be placed towards the line that is to be protected. These devices should not be connected to DC supply rails as they can latch up as described below. Due to the snapback characteristics of the low voltage TVS, it is not recommended that the I/O line be directly connected to a DC source greater than snapback votlage (VSB) as the device can latch on as described below. EPD TVS Characteristics The µclamp31pq is constructed using Semtech s proprietary EPD technology. The structure of the EPD TVS is vastly different from the traditional pnjunction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, the µclamp31pq can effectively operate at 3.V while maintaining excellent electrical characteristics. The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional siliconavalanche TVS diodes. Since the EPD TVS devices use a 4layer structure, they exhibit a slightly different IV characteristic curve when compared to conventional devices. During normal operation, the device represents a highimpedance to the circuit up to the device working voltage (VRWM). During an ESD event, the device will begin to conduct and will enter a low impedance state when the punch through voltage (VPT) is exceeded. Unlike a conventional device, the low voltage TVS will exhibit a slight negative resistance characteristic as it conducts current. This characteristic aids in lowering the clamping voltage of the device, but must be considered in applications where DC voltages are present. When the TVS is conducting current, it will exhibit a slight snapback or negative resistance characteristics due to its structures. This point is defi ned on the curve by the snapback voltage (VSB) and snapback current (ISB). To return to a nonconducting state, the current through the device must fall below the ISB (approximately <5mA) Device Schematic & Pin Configuration 4 and the voltage must fall below the VSB (normally 2.8 volts for a 3.V device). If a 3.V TVS is connected directly to a 3.V DC source, it will never fall below the snapback voltage of 2.8V and will therefore stay in a conducting state. EPD TVS IV Characteristic Curve 214 Semtech Corporation. 5
µclamp31pq Outline Drawing SLP16P2 % $ $$ " $! %$ $ $$ "$ "& %" & %! $ # $! $ " % $ $ "! % '#(%+#+ Land Pattern SLP16P2 + ) ""!$ % " ) $$ + $$ % '#(%+%+ ' ' ( )( )( ('( ( ( )( )* ('( ( 214 Semtech Corporation. 6
µclamp31pq Marking Ordering Information Part Number Qty per Reel Reel Size µclamp31pqtnt 1 7 Notes: Cathode Band at Pin 2 Tape and Reel Specification!! Notes: 1) Lead fi nish is leadfree NiPdAu. 2) MicroClamp, uclamp and µclamp are trademarks of Semtech Corporation. $ 5 (6. 2 4, / 5 (6 $)) 4 ). / +&123,/ "##$ %&' Contact Information Semtech Corporation Protection Products Division 2 Flynn Rd., Camarillo, CA 9312 Phone: (85)4982111 FAX (85)498384 214 Semtech Corporation. 7
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