Bulletin I2734 rev. E /2 IRKU/V4, 56 SERIES THYRISTOR/ THYRISTOR ADD-A-pak TM GEN V Power Modules Features High Voltage Industrial Standard Package Thick Al metal die and double stick bonding Thick copper baseplate UL E78996 approved 35V RMS isolating voltage Benefits Up to 6V Full compatible TO-24AA High Surge capability Easy Mounting on heatsink Al 2 3 DBC insulator Heatsink grounded 45 A 6 A Mechanical Description The Generation V of Add-A-pak module combine the excellent thermal performance obtained by the usage of Direct Bonded Copper substrate with superior mechanical ruggedness, thanks to the insertion of a solid Copper baseplate at the bottom side of the device. The Cu baseplate allow an easier mounting on the majority of heatsink with increased tolerance of surface roughness and improve thermal spread. The Generation V of AAP module is manufactured without hard mold, eliminating in this way any possible direct stress on the leads. The electrical terminals are secured against axial pull-out: they are fixed to the module housing via a click-stop feature already tested and proved as reliable on other IR modules. Electrical Description These modules are intended for general purpose high voltage applications such as high voltage regulated power supplies, lighting circuits, temperature and motor speed control circuits, UPS and battery charger. Major Ratings and Characteristics Parameters IRKU/V4 IRKU/V56 Units I T(AV) @ 85 C 45 6 A I T(RMS) 7 95 A I TSM @ 5Hz 85 3 A @ 6Hz 89 37 A I 2 t @ 5Hz 3.6 8.5 KA 2 s @ 6Hz 3.3 7.82 KA 2 s I 2 t 36. 85. KA 2 s V RRM range 4 to 6 V T STG - 4 to 25 o C - 4 to25 o C
Bulletin I2734 rev. E /2 ELECTRICAL SPECIFICATIONS Voltage Ratings Type number V RRM, maximum V RSM, maximum V DRM, max. repetitive I RRM Voltage repetitive non-repetitive peak off-state voltage, I DRM Code peak reverse voltage peak reverse voltage gate open circuit 25 C - V V V ma 4 4 5 4 IRKU/V4, 56 8 9 5 2 2 3 2 6 6 7 6 On-state Conduction Parameters IRKU/V4 IRKU/V56 Units Conditions I T(AV) Max. average on-state 45 6 o conduction, half sine wave, current A T C = 85 o C I T(RMS) Max. RMS on-state 7 95 DC current @ T C 82 C I TSM Max. peak, one cycle 85 3 t=ms No voltage Sinusoidal non-repetitive on-state 89 37 t=8.3ms reapplied half wave, current 75 A t=ms % V RRM Initial = max. 75 5 t=8.3ms reapplied 94 45 t=ms = 25 o C, 985 52 t=8.3ms no voltage reapplied I 2 t Max. I 2 t for fusing 3.6 8.56 t=ms No voltage 3.3 7.82 t=8.3ms reapplied 2.56 6.5 KA 2 s t=ms % V RRM Initial = max. 2.33 5.53 t=8.3ms reapplied 4.42.5 t=ms = 25 o C, 4.3 9.6 t=8.3ms no voltage reapplied I 2 t Max. I 2 t for fusing () 36. 85.6 KA 2 s t=. to ms, no voltage reapplied V T(TO) Max. value of threshold.88.85 Low level (3) V voltage (2).9.88 High level (4) r t Max. value of on-state 5.9 3.53 Low level (3) mω slope resistance (2) 5.74 3.4 High level (4) V TM Max. peak on-state I TM = π x I T(AV).8.54 V voltage I FM = π x I F(AV) = max = max = 25 C di/dt Max. non-repetitive rate = 25 o C, from.67 V DRM, of rise of turned on 5 A/µs I TM =π x I T(AV), I = 5mA, g current t r <.5 µs, t p > 6 µs I H Max. holding current 2 = 25 o C, anode supply = 6V, ma resistive load, gate open circuit I L Max. latching current 4 = 25 o C, anode supply = 6V,resistive load () I 2 t for time t = I 2 t x t. x x (2) Average power = V T(TO) x I T(AV) + r t x (I T(RMS) ) 2 (3) 6.7% x π x I AV < I < π x I AV (4) I > π x I AV 2
Triggering IRKU/V4, 56 Series Bulletin I2734 rev. E /2 Parameters IRKU/V4 IRKU/V56 Units Conditions P GM Max. peak gate power P G(AV) Max. average gate power 2.5 2.5 W I GM Max. peak gate current 2.5 2.5 A -V GM Max. peak negative gate voltage V GT Max. gate voltage 4. = - 4 C V required to trigger 2.5 = 25 C.7 = 25 C I GT Max. gate current 27 = - 4 C required to trigger 5 ma = 25 C = 25 C V GD Max. gate voltage that will not trigger.25 V I GD Max. gate current that will not trigger 6 ma Blocking I RRM Max. peak reverse and I DRM off-state leakage current 5 ma = 25 o C, gate open circuit at V RRM, V DRM V INS RMS isolation voltage 25 ( min) 5 Hz, circuit to base, all terminals V 35 ( sec) shorted dv/dt Max. critical rate of rise = 25 o C, linear to.67 V DRM, 5 V/µs of off-state voltage (5) gate open circuit (5) Available with dv/dt = V/µs, to complete code add S9 i.e. IRKU4/6AS9. Thermal and Mechanical Specifications = 25 o C, rated V DRM applied = 25 o C, rated V DRM applied Parameters IRKU/V4, 56 Units Conditions Parameters IRKU/V4 IRKU/V56 Units Conditions Anode supply = 6V resistive load Anode supply = 6V resistive load Junction operating - 4 to 25 temperature range C T stg Storage temper. range - 4 to 25 R thjc Max. internal thermal resistance, junction.23.2 Per module, DC operation to case K/W R thcs Typical thermal resistance Mounting surface flat, smooth and greased. case to heatsink T Mounting torque ± % A mounting compound is recommended 5 and the torque should be rechecked after to heatsink Nm a period of 3 hours to allow for the spread busbar 3 of the compound wt Approximate weight (4) g (oz) Case style TO-24AA JEDEC R Conduction (per Junction) (The following table shows the increment of thermal resistance R thjc when devices operate at different conduction angles than DC) Devices Sine half wave conduction Rect. wave conduction o 2 o 9 o 6 o 3 o o 2 o 9 o 6 o 3 o IRKU/V4..3.7.23.34.9.4.8.23.34 IRKU/V56.9..3.8.27.7..4.9.28 Units C/W 3
Bulletin I2734 rev. E /2 Ordering Information Table Device Code IRK U 56 / 6 A S9 IRK.57 types With no auxiliary cathode 2 3 4 5 6 - Module type 2 - Circuit configuration (See Circuit Configuration table below) 3 - Current code * * 4 - Voltage code (See Voltage Ratings table) 5 - A : Gen V 6 - dv/dt code: S9 = dv/dt V/µs No letter = dv/dt 5 Vµs * * Available with no auxiliary cathode. To specify change: 56 to 57 4 to 42 e.g. : IRKU57/6A etc. Outline Table Dimensions are in millimeters and [inches] IRKU () + IRKV () - - (2) + (2) - (3) G K K2 G2 (4) (5) (7) (6) + (3) G K K2 G2 (4) (5) (7) (6) 4 NOTE: To order the Optional Hardware see Bulletin I279
Bulletin I2734 rev. E /2 Maximum Allowable Case Temperature ( C) 3 R (DC) =.46 K/W thjc 2 Conduction Angle 3 9 2 9 2 3 4 5 Maximum Allowable Case Temperature ( C) 3 2 9 3 R thjc (DC) =.46 K/W 9 2 Conduction Period DC 2 4 6 Fig. - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Average On-state Power Loss (W) 7 6 5 4 2 9 3 RMS Limit 3 Conduction Angle 2 = 25 C 2 3 4 5 Maximum Average On-state Power Loss (W) 6 4 DC 2 9 3 RMS Limit Conduction Period 2 T J = 25 C 2 4 6 Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 7 6 5 4 3 Number Of Equal Amplitude Half Cycle Current Pulses (N) At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial = 25 C @ 6 Hz.83 s @ 5 Hz. s Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) 9 7 6 5 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial = 25 C No Voltage Reapplied Rated V RRMReapplied 4 3.. Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current 5
Bulletin I2734 rev. E /2 35 Maximum Total Power Loss (W) 3 25 2 5 (Sine) (Rect).5 K/W.7 K/W K/W 2 x Single Phase Bridge 5 Connected = 25 C 2 4 6 2 4 6 2 4 Total Output Current (A) Maximum Allowable Ambient Temperature ( C).3 K/W.5 K/W.2 K/W R =. K/W - Delta R thsa Fig. 7 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV) 35 Maximum Total Power Loss (W) 3 25 2 5 I o (Rect) R =. K/W - Delta R 3 x 6-Pulse Midpoint 5 Connection Bridge = 25 C 2 4 6 2 4 6 2 4 6 2 4 Total Output Current (A) Maximum Allowable Ambient Temperature ( C).3 K/W.5 K/W.7 K/W K/W.2 K/W thsa Fig. 8 - On-state Power Loss Characteristics Maximum Allowable Case Temperature ( C) 3 R thjc (DC) =.4 K/W 2 Conduction Angle 9 3 9 2 7 2 3 4 5 6 7 Maximum Allowable Case Temperature ( C) 3 R thjc(dc) =.4 K/W 2 Conduction Period 9 9 3 2 DC 7 2 4 6 Fig. 9 - Current Ratings Characteristics Fig. - Current Ratings Characteristics 6
Bulletin I2734 rev. E /2 Maximum Average On-state Power Loss (W) 9 7 6 5 4 3 2 9 3 RMS Limit Conduction Angle 2 = 25 C 2 3 4 5 6 Maximum Average On-state Power Loss (W) 2 6 4 2 DC 2 9 3 RMS Limit Conduction Period T = 25 C J 2 4 6 Fig. - On-state Power Loss Characteristics Fig. 2 - On-state Power Loss Characteristics Peak Half Sine Wave On-state Current (A) 2 9 7 At Any Rated Load Condition And With Rated V RRM Applied Following Surge. Initial = 25 C @ 6 Hz.83 s @ 5 Hz. s 6 5 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 3 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) 4 2 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial = 25 C No Voltage Reapplied Rated V RRMReapplied 6 4.. Pulse Train Duration (s) Fig. 4 - Maximum Non-Repetitive Surge Current 45 Maximum Total Power Loss (W) 4 35 3 25 2 (Sine) (Rect).3 K/W.5 K/W.7 K/W 5 2 x Single Phase Bridge 5 Connected = 25 C 2 4 6 2 4 2 4 6 2 4 Total Output Current (A) Maximum Allowable Ambient Temperature ( C).2 K/W K/W 2 K/W R =. K/W - Delta R thsa Fig. 5 - On-state Power Loss Characteristics (Single Phase Bridge IRKU+IRKV) 7
Bulletin I2734 rev. E /2 45 Maximum Total Power Loss (W) 4 35 3 25 2 I o (Rect).5 K/W.7 K/W R =. K/W - Delta R 5 3 x 6-Pulse Midpoint 5 Connection Bridge = 25 C 5 5 2 25 2 4 6 2 4 Total Output Current (A) Maximum Allowable Ambient Temperature ( C).3 K/W K/W.2 K/W thsa Fig. 6 - On-state Power Loss Characteristics Instantaneous On-state Current (A) T = 25 C J T = 25 C J Instantaneous On-state Current (A) T = 25 C J T = 25 C J 2 3 4 5 6 7.5.5 2 2.5 3 3.5 4 4.5 Instantaneous On-state Voltage (V) Instantaneous On-state Voltage (V) Fig. 7 - On-state Voltage Drop Characteristics Fig. 8 - On-state Voltage Drop Characteristics Maximum Reverse Recovery Charge - Qrr (µc) 5 45 4 35 3 25 2 5 T = 25 C J I TM = 2 A A 5 A 2 A A 2 3 4 5 6 7 9 Maximum Reverse Recovery Current - Irr (A) 9 7 6 5 4 I TM = 2 A A 5 A 2 A A T = 25 C J 3 2 3 4 5 6 7 9 Rate Of Fall Of On-state Current - di/dt (A/µs) Rate Of Fall Of Forward Current - di/dt (A/µs) Fig. 9 - Recovery Charge Characteristics Fig. 2 - Recovery Current Characteristics 8
Bulletin I2734 rev. E /2 Transient Thermal Impedance Z thjc (K/W). Steady State Value: R thjc=.46 K/W R thjc=.4 K/W (DC Operation).... Square Wave Pulse Duration (s) Fig. 2 - Thermal Impedance Z thjc Characteristics Instantaneous Gate Voltage (V) Rectangular gate pulse a)recommended load line for rated di/dt: 2 V, 3 ohms tr =.5 µs, tp >= 6 µs b)recommended load line for <= 3% rated di/dt: 2 V, 65 ohms tr = µs, tp >= 6 µs (a) (b) TJ = 25 C TJ = 25 C TJ = -4 C VGD IGD. IRK.4../.56.. Series Frequency Limited by PG(AV)... Instantaneous Gate Current (A) Fig. 22 - Gate Characteristics () PGM = W, tp = 5 µs (2) PGM = 5 W, tp = ms (3) PGM = 2 W, tp = 25 ms (4) PGM = W, tp = 5 ms (4) (3) (2) () Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) 252-75 TAC Fax: (3) 252-739 Visit us at for sales contact information. /2 9