TCLT.. Series Optocoupler, Phototransistor Output, SOP-4L, Long Mini-Flat Package Features SMD Low profile 4 lead package High Isolation 5 V RMS CTR flexibility available see order information Special construction Extra low coupling capacitance Connected base DC input with transistor output C E 4 3 2 A C C 7295 V D E Agency Approvals UL 577 Recognized, File No. E76222 - Double Protection CSA (C-UL) 577 Recognized File No. E- 76222 - Double Protection BSI: BS EN 43, BS EN 695 (BS 45), BS EN 695 (BS 72), Certificate number 78 and 742 DIN EN 6747-5-2(VDE884) DIN EN 6747-5-5 pending FIMKO (SETI): EN 695, Certificate No. 27 NOTE: See the Safety Standard Approval List "Agency Table" for more detailed information. Applications Switchmode power supplies Computer peripheral interface Microprocessor system interface Description The TCLT.. Series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead SOP4L package. The elements are mounted on one leadframe providing a fixed distance between input and output for highest safety requirements. Order Information TCLT TCLT2 TCLT3 TCLT5 TCLT6 TCLT7 TCLT8 TCLT9 Part NOTE: Available only on tape and reel. Remarks CTR 5-6 %, SMD-4 CTR 63-25 %, SMD-4 CTR - 2 %, SMD-4 CTR 5-5 %, SMD-4 CTR - 3 %, SMD-4 CTR 8-6 %, SMD-4 CTR 3-26 %, SMD-4 CTR 2-4 %, SMD-4 Rev..7, 2-Apr-4
TCLT.. Series VISHAY Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Parameter Test condition Symbol Value Unit Reverse voltage V R 6 V Forward current I F 6 ma Forward surge current t p µs I FSM.5 A Power dissipation P diss mw Junction temperature T j 25 C Output Parameter Test condition Symbol Value Unit Collector emitter voltage V CEO 7 V Emitter collector voltage V ECO 7 V Collector current I C 5 ma Collector peak current t p /T =.5, t p ms I CM ma Power dissipation P diss 5 mw Junction temperature T j 25 C Coupler Parameter Test condition Symbol Value Unit Isolation test voltage (RMS) V ISO 5 V RMS Total power dissipation P tot 25 mw Operating ambient temperature T amb - 4 to + C range Storage temperature range T stg - 4 to + C Soldering temperature T sld 24 C Electrical Characteristics T amb = 25 C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Forward voltage I F = ± 5 ma V F.25.6 V Junction capacitance V R = V, f = MHz C j 5 pf Output Collector emitter voltage I C = ma V CEO 7 V Emitter collector voltage I E = µa V ECO 7 V Collector-emitter cut-off current V CE = 2 V, I f =, E = I CEO na 2 Rev..7, 2-Apr-4
TCLT.. Series Coupler Collector emitter saturation I F = ma, I C = ma V CEsat.3 V voltage Cut-off frequency V CE = 5 V, I F = ma, R L = Ω f c khz Coupling capacitance f = MHz C k.3 pf Current Transfer Ratio Parameter Test condition Part Symbol Min Typ. Max Unit I C /I F V CE = 5 V, I F = 5 ma TCLT CTR 5 6 % V CE = 5 V, I F = ma TCLT2 CTR 63 25 % TCLT3 CTR 2 % V CE = 5 V, I F = ma TCLT2 CTR 22 45 % TCLT3 CTR 34 7 % V CE = 5 V, I F = 5 ma TCLT5 CTR 5 5 % TCLT6 CTR 3 % TCLT7 CTR 8 6 % TCLT8 CTR 3 26 % TCLT9 CTR 2 4 % Maximum Safety Ratings (according to DIN EN 6747-5-2(VDE884)/ DIN EN 6747-5-5 pending) see figure This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. Input Forward current I F 3 ma Output Power dissipation P diss 265 mw Coupler Rated impulse voltage V IOTM 8 kv Safety temperature T si 5 C Rev..7, 2-Apr-4 3
TCLT.. Series VISHAY Insulation Rated Parameters Partial discharge test voltage - %, t test = s V pd.6 kv Routine test Partial discharge test voltage - Lot test (sample test) t Tr = 6 s, t test = s, (see figure 2) V IOTM 8 kv V pd.3 kv Insulation resistance V IO = 5 V R IO 2 Ω V IO = 5 V, T amb = C R IO Ω V IO = 5 V, T amb = 5 C (construction test only) R IO 9 Ω P tot Total Power Dissipation ( mw ) 94 982 3 25 Phototransistor Psi ( mw ) 2 5 5 IR-Diode Isi ( ma ) 25 5 75 25 T si Safety Temperature ( C ) 5 V IOTM 393 V Pd V IOWM V IORM t t, t 2 = to s t 3, t 4 = s t test = s t stres = 2 s t Tr = 6 s t 3 t test t 4 t 2 t stres t Fig. Derating diagram Fig. 2 Test pulse diagram for sample test according to DIN EN 6747-5-2(VDE884)/ DIN EN 6747-; IEC6747 4 Rev..7, 2-Apr-4
TCLT.. Series Switching Characteristics Delay time V S = 5 V, I C = 2 ma, R L = Ω t d 3. µs Rise time V S = 5 V, I C = 2 ma, R L = Ω t r 3. µs Turn-on time V S = 5 V, I C = 2 ma, R L = Ω t on 6. µs Storage time V S = 5 V, I C = 2 ma, R L = Ω t s.3 µs Fall time V S = 5 V, I C = 2 ma, R L = Ω t f 4.7 µs Turn-off time V S = 5 V, I C = 2 ma, R L = Ω t off 5. µs Turn-on time V S = 5 V, I F = ma, R L = kω t on 9. µs (see figure 4) Turn-off time V S = 5 V, I F = ma, R L = kω (see figure 4) t off. µs I F 96 698 95 84 I F R G = 5 t p T =. t p = 5 s I F 5 + 5 V I C = 2 ma; adjusted through input amplitude Channel I Channel II Oscilloscope R L = M C L = 2 pf I C % 9% % t p t d t r t on (= t d +t r ) t p t r t d t on pulse duration delay time rise time turn-on time t s t f t off t s t f t off (= t s +t f ) t t storage time fall time turn-off time Fig. 3 Test circuit, non-saturated operation Fig. 5 Switching Times I F I F =ma +5V I C R G =5Ω t p T =. t p =5µ s 5 Ω kω Channel I Channel II Oscilloscope R L MΩ C L 2 pf 95 843 Fig. 4 Test circuit, saturated operation Rev..7, 2-Apr-4 5
TCLT.. Series VISHAY Typical Characteristics (T amb = 25 C unless otherwise specified) P tot Total Power Dissipation ( mw) 3 Coupled device 25 2 Phototransistor 5 IR-diode 5 4 8 2 96 7 T amb Ambient Temperature( C ) I CEO - Collector Dark Current, with open Base ( na ) 95 26 V CE =2V I F = 25 5 75 T amb - Ambient Temperature ( C ) Fig. 6 Total Power Dissipation vs. Ambient Temperature Fig. 9 Collector Dark Current vs. Ambient Temperature I F - Forward Current ( ma ).... I Collector Current ( ma ) C. V CE =5V...2.4.6.8..2.4.6.8 2. 96 862 V F - Forward Voltage (V) 95 27.. I F Forward Current ( ma ) Fig. 7 Forward Current vs. Forward Voltage Fig. Collector Current vs. Forward Current CTR rel Relative Current Transfer Ratio 95 25 2..5..5 25 25 5 V CE =5V I F =5mA T amb Ambient Temperature ( C ) 75 I Collector Current ( ma) C 95 985 I F =5mA.. 2mA ma 5mA 2mA ma V CE Collector Emitter Voltage (V) Fig. 8 Relative Current Transfer Ratio vs. Ambient Temperature Fig. Collector Current vs. Collector Emitter Voltage 6 Rev..7, 2-Apr-4
TCLT.. Series V CEsat Collector Emitter Saturation Voltage (V)..8.6.4.2 CTR=5% % 2% t on / t off Turn on / Turn off Time ( µ s ) 5 4 3 2 Saturated Operation V S =5V R L =k Ω 5 5 t off t on 2 95 28 I C Collector Current ( ma ) 95 3 I F Forward Current ( ma ) Fig. 2 Collector Emitter Saturation Voltage vs. Collector Current Fig. 5 Turn on / off Time vs. Forward Current CTR Current Transfer Ratio ( % ) V CE =5V 95 29. I F Forward Current ( ma ) Fig. 3 Current Transfer Ratio vs. Forward Current t on / t off Turn on / Turn off Time ( µ s ) 95 3 8 6 4 2 t on t off Non Saturated Operation V S =5V R L = Ω 2 4 6 I C Collector Current ( ma ) Fig. 4 Turn on / off Time vs. Collector Current Rev..7, 2-Apr-4 7
TCLT.. Series VISHAY Package Dimensions in mm 5243 8 Rev..7, 2-Apr-4
TCLT.. Series Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (987) and its London Amendments (99) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents.. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 99 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/54/EEC and 9/69/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-7425 Heilbronn, Germany Telephone: 49 ()73 67 283, Fax number: 49 ()73 67 2423 Rev..7, 2-Apr-4 9