NSVFSB RF Transistor 1 V, 1 ma, ft = GHz, NPN Single This RF transistor is designed for low noise amplifier applications. CPH package is suitable for use under high temperature environment because it has superior heat radiation characteristics. This RF transistor is AEC-Q11 qualified and PPAP capable for automotive applications. Features High Gain (f T = GHz typ) High Current (I C = 1 ma) Miniature and Thin pin Package Large Collector Dissipation (8 mw) AEC-Q11 qualified and PPAP capable Pb-Free, Halogen Free and RoHS compliance Typical Applications Low Noise Amplifier for FM Radio Low Noise Amplifier for TV SPECIFICATIONS ABSOLUTE MAXIMUM RATING at Ta = C (Note 1) Parameter Symbol Value Unit Collector to Base Voltage VCBO V Collector to Emitter Voltage VCEO 1 V Emitter to Base Voltage VEBO V Collector Current IC 1 ma Collector Dissipation (Note ) PC 8 mw Operating Junction and Storage Temperature Tj, Tstg to +1 C Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Note : Surface mounted on ceramic substrate ( mm.8 mm). ELECTRICAL CONNECTION NPN 1 V, 1 ma ft = GHz typ. RF Transistor 1,,, 1 CPH 1 : Collector : Collector : Base : Emitter : Collector : Collector MARKING GC ORDERING INFORMATION See detailed ordering and shipping information on page of this data sheet. LOT No. Semiconductor Components Industries, LLC, 1 1 Publication Order Number : May 1 - Rev. NSVFSB/D
NSVFSB ELECTRICAL CHARACTERISTICS at Ta C (Note ) Parameter Symbol Conditions Value min typ max Collector Cutoff Current ICBO VCB = 1 V, IE = A 1. A Emitter Cutoff Current IEBO VEB = 1 V, IC = A 1 A DC Current Gain hfe 1 18 VCE = V, IC = ma Gain-Bandwidth Product ft GHz Output Capacitance Cob 1.. pf VCB = 1 V, f = 1 MHz Reverse Transfer Capacitance Cre.9 pf Forward Transfer Gain S1e VCE = V, IC = ma, f = 1 GHz 9. db Noise Figure NF VCE = V, IC = ma, f = 1 GHz 1.8. db Note : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Note : Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted. Unit
NSVFSB Collector Current, I C -- ma 1 1 1 1 8 1 IC -- VCE 1 A 9 A Collector-to-Emitter Voltage, VCE -- V ft -- IC 8 A A A A A A A 1 A IB= A 8 1 VCE=V DC Current Gain, hfe hfe -- IC VCE=V 1 1. 1 1 Collector Current, IC -- ma Cob -- VCB f=1mhz Gain-Bandwidth Product, f T -- GHz Output Capacitance, Cob -- pf 1. Reverse Transfer Capacitance, Cre -- pf 1. 1. 1 1 1. Collector Current, I C -- ma Cre -- VCB f=1mhz Forward Transfer Gain, S1e -- db.1 1. 1 1 1 8 Collector-to-Base Voltage, V CB -- V S1e -- IC V CE =V f=1ghz.1 1. 1 8 Collector-to-Base Voltage, VCB -- V NF -- IC VCE=V f=1ghz 1. 1 1 9 8 Collector Current, IC -- ma PC -- Ta Surface mounted on ceramic substrate ( mm.8 mm) Noise Figure, NF -- db Collector Dissipation, PC -- mw 1 1. 1 1 Collector Current, I C -- ma 8 1 1 1 1 Ambient Temperature, Ta -- C
NSVFSB S Parameters (Common emitter) VCE = V, IC = ma, ZO = Freq(MHz) S11 S11 S1 S1 S1 S1 S S 1..1 1. 119.9... -.8.9 18.1 1. 1.... -8.. 1.9 8.8 9.. 1.. -88.. 19.. 9..8.. 8.1.18 181..1 8.8.89 8..1..1 1.8.1 8.9.1..1.8.1 11..8 81..1 1..1. 8.8 1.. 8.9.1.. 9. 9. 1..9..1.. 1. 1.9 1.1...1..1. 11.9 1.8.19..181.9.9. 1.89 1....19.1. 8.8 VCE = V, IC = ma, ZO = Freq(MHz) S11 S11 S1 S1 S1 S1 S S 1. 1.1. 111.9.9 9..1-9.9.9. 1.19 98....9 9.. 191. 9.1 9..1.... 18..9 88.8.8.8.18.. 1.. 8.1.9..1..9 1.. 8..11..9..9 1..9 81..1...1 8.9 1.8.8 9..1..8 9.9 9.8 19.1.1..11... 1.8 1..8..18.1..1 11. 1..8..19.9. 8. 1.8 19.. 1.9.11..9. VCE = V, IC = 1 ma, ZO = Freq(MHz) S11 S11 S1 S1 S1 S1 S S 1.1 19..88 18....9-8..8 19. 1.9 9.8. 9.8..1.8 18. 9.19 91...8.1.9. 18..9 8.8.8....8 1..8 8..9.9.8 19.9. 18.. 8.1.11.. 1.. 1..9 81..18.8.. 8.9 11..8 9..1.8.. 9.9 1..1..1..8 9.1 1.8 1..8..18.1..1 11.9 11..1..19...8 1. 1.8. 1..1.. 9.
NSVFSB PACKAGE DIMENSIONS unit : mm CPH CASE 18BD ISSUE O RECOMMENDED SOLDERING FOOTPRINT.. 1..9.9 1 : Collector : Collector : Base : Emitter : Collector : Collector
NSVFSB ORDERING INFORMATION NSVFSBT1G Device Marking Package Shipping (Qty / Packing) GC CPH (Pb-Free / Halogen Free), / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. http:///pub_link/collateral/brd811-d.pdf ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent-marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.