VS-GT3FD6N Dual INT-A-PAK Low Profile 3-Level Half Bridge Inverter Stage, 3 A FEATURES Trench plus Field Stop IGBT technology FRED Pt antiparallel and clamping diodes Short circuit capability Low stray internal inductances Low switching loss UL approved file E78996 Material categorization: for definitions of compliance please see www.vishay.com/doc?9992 PRIMARY CHARACTERISTICS V CES V CE(on) typical at I C = 3 A I C at T C = 25 C Speed Package Circuit configuration 6 V.72 V 379 A 8 khz to 3 khz Dual INT-A-PAK low profile 3-level half bridge inverter stage APPLICATION Solar converters Uninterruptible power supplies BENEFITS Direct mounting on heatsink Low junction to case thermal resistance Easy paralleling due to positive T C of V CE(sat) ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS Operating junction temperature T J 75 Storage temperature range T Stg -4 to +75 C RMS isolation voltage V ISOL, all terminals shorted, f = 5 Hz, t = s 35 Collector to emitter voltage V CES 6 V Gate to emitter voltage V GES 2 Pulsed collector current I CM 65 Clamped inductive load current I LM 65 A T C = 25 C 379 Continuous collector current I C T C = 8 C 288 T C = 25 C 25 Power dissipation P D T C = 8 C 792 W D5 - D6 CLAMPING DIODE Repetitive peak reverse voltage V RRM 6 V Single pulse forward current I FSM ms sine or 6 ms rectangular pulse, 8 T C = 25 C 25 A Diode continuous forward current I F T C = 8 C 6 T C = 25 C 5 Power dissipation P D T C = 8 C 37 W D - D2 - D3 - D4 AP DIODE Single pulse forward current I FSM ms sine or 6 ms rectangular pulse, 8 T C = 25 C 25 A Diode continuous forward current I F T C = 8 C 6 T C = 25 C 5 Power dissipation P D T C = 8 C 37 W Note Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur Revision: -Dec-7 Document Number: 93569 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT3FD6N ELECTRICAL SPECIFICATIONS ( unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q - Q2 - Q3 - Q4 TRENCH IGBT Collector to emitter breakdown voltage BV CES V GE = V, I C = 5 μa 6 - - V GE = 5 V, I C = 3 A -.72 2.5 Collector to emitter voltage V CE(on) V GE = 5 V, I C = 3 A, -.93 - V Gate threshold voltage V GE(th) V CE = V GE, I C = 6.8 ma 2.9 4.8 7.5 Temperature coefficient of threshold voltage V GE(th) / T J V CE = V GE, I C = ma (25 C to 25 C) - -7.8 - mv/ C Forward transconductance g fe V CE = 2 V, I C = 3 A - 35 - S Transfer characteristics V GE V CE = 2 V, I C = 3 A - 7.9 - V V GE = V, V CE = 6 V -.4 25 Zero gate voltage collector current I CES V GE = V, V CE = 6 V, - 3 - μa Gate to emitter leakage current I GES V GE = ± 2 V, V CE = V - - ± 5 na D5 - D6 CLAMPING DIODE Cathode to anode blocking voltage V BR I R = μa 6 - - I F = 5 A - 2.7 2.7 Forward voltage drop V FM I F = 5 A, -.6 - V R = 6 V -.25 Reverse leakage current I RM V R = 6 V, - 4 - D - D2 - D3 - D4 AP DIODE I F = 5 A - 2.7 2.7 Forward voltage drop V FM I F = 5 A, -.6 - V μa V SWITCHING CHARACTERISTICS ( unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q - Q2 - Q3 - Q4 TRENCH IGBT Total gate charge (turn-on) Q g I C = 3 A - 75 - Gate to emitter charge (turn-on) Q ge V CC = 4 V - 2 - nc Gate to collector charge (turn-on) Q gc V GE = 5 V - 3 - Turn-on switching loss E on IC = 5 A, V CC = 3 V - 2. - Turn-off switching loss E off V GE = 5 V, R g = - 3. - Total switching loss E tot L = 5 μh, - 5.2 - Turn-on switching loss E on IC = 3 A, V CC = 3 V - 8.6 - Turn-off switching loss E off V GE = 5 V, R g = 22-5.4 - mj Total switching loss E tot L = 5 μh, - 24 - Turn-on switching loss E on - 2.6 - Turn-off switching loss E off I C = 5 A - 3.7 - Total switching loss E tot V CC = 3 V - 6.3 - V GE = 5 V Turn-on delay time t d(on) - 453 - R g = Rise time t r - 2 - L = 5 μh ns Turn-off delay time t d(off) - 366 - Fall time t f - 9 - Revision: -Dec-7 2 Document Number: 93569 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT3FD6N SWITCHING CHARACTERISTICS ( unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Q - Q2 - Q3 - Q4 TRENCH IGBT Turn-on switching loss E on -.7 - Turn-off switching loss E off I C = 3 A - 5.6 - mj V CC = 3 V Total switching loss E tot - 26.3 - V GE = 5 V Turn-on delay time t d(on) - 84 - R g = 22 Rise time t r - 279 - L = 5 μh ns Turn-off delay time t d(off) - 566 - Fall time t f - 29 - Input capacitance C ies VGE = V - 23.3 - Output capacitance C oes V CC = 3 V -.7 - nf Reverse transfer capacitance C res f = MHz -.7 - Reverse bias safe operating area RBSOA T J = 75 C, I C = 65 A V CC = 27 V, V P = 6 V R g = 22, V GE = 5 V to V Short circuit safe operating area SCSOA V CC = 4 V, V p = 6 V R g =, V GE = 5 V to V - - 5. μs D5 - D6 CLAMPING DIODE Diode reverse recovery time t rr VR = V - 5 - ns Diode peak reverse current I rr I F = 5 A - 3.5 - A Diode recovery charge Q rr dl/dt = 5 A/μs - 72 - nc Diode reverse recovery time t rr VR = V - 66 - ns Diode peak reverse current I rr I F = 5 A - 24.5 - A Diode recovery charge Q rr dl/dt = 5 A/μs, - 25 - nc D - D2 - D3 - D4 AP DIODE Diode reverse recovery time t rr VR = V - 5 - ns Diode peak reverse current I rr I F = 5 A - 3.5 - A Diode recovery charge Q rr dl/dt = 5 A/μs - 72 - nc Diode reverse recovery time t rr VR = V - 66 - ns Diode peak reverse current I rr I F = 5 A - 24.5 - A Diode recovery charge Q rr dl/dt = 5 A/μs, - 25 - nc THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL MIN. TYP. MAX. UNITS Junction to case IGBT thermal resistance (per switch) - -.2 R thjc Junction to case diode thermal resistance (per diode) - -.3 C/W Case to sink, flat, greased surface (per module) R thcs -.5 - Mounting torque, case to heatsink: M6 screw 4-6 Mounting torque, case to terminal:, 2, 3, 4: M5 screw 2-5 Nm Weight - 27 - g Revision: -Dec-7 3 Document Number: 93569 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT3FD6N www.vishay.com 6 55 5 45 4 35 3 25 T J = 75 C 5 5.5.5 2 2.5 3 3.5 4 V CE (V) 2.4 2.2 3 A 2.8.6 5 A.4.2 8 A.8 2 4 6 8 2 4 6 8 V CE (V) T J - Junction Temperature ( C) Fig. - Typical Trench IGBT Output Characteristics, V GE = 5 V Fig. 4 - Typical Trench IGBT Collector to Emitter Voltage vs. Junction Temperature, V GE = 5 V 6 55 V GE = 8 V 5 45 V GE = 5 V 4 V GE = 2 V 35 V GE = 9 V 3 25 5 5.5.5 2 2.5 3 3.5 4 I CE (A) 6 55 V CE = 2 V 5 45 4 35 3 25 5 5 3. 4. 5. 6. 7. 8. 9.. V CE (V) V GE (V) Fig. 2 - Typical Trench IGBT Output Characteristics, Fig. 5 - Typical Trench IGBT Transfer Characteristics 6. Allowable Case Temperature ( C) 8 6 4 2 DC 8 6 4 2 5 5 25 3 35 4 45 V GE(th) (V) 5.5 5. 4.5 4. 3.5 3. 2.5 2..5..2.3.4.5.6.7.8.9 I C - Continuous Collector Current (A) I C (ma) Fig. 3 - Maximum Trench IGBT Continuous Collector Current vs. Case Temperature (per switch) Fig. 6 - Typical Trench IGBT Gate Threshold Voltage Revision: -Dec-7 4 Document Number: 93569 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT3FD6N 75 C T J = 75 C I CES (ma).. 25 C I CES (ma).... 25 C... 3 4 5 6 V CES (V) Fig. 7 - Typical Trench IGBT Zero Gate Voltage Collector Current. 3 4 5 6 V CES (V) Fig. - Typical Diode Reverse Leakage Current I F (A) 6 55 5 45 4 35 3 25 5 5 T J = 75 C.5.5 2 2.5 3 3.5 4 Energy (mj) 3.8 3.4 3. 2.6 E OFF 2.2 E ON.8.4. 4 6 8 2 4 6 V FM (V) Fig. 8 - Typical Diode Forward Characteristics Fig. - Typical Trench IGBT Energy Loss vs. I C,, V CC = 3 V, R g =, V GE = 5 V, L = 5 μh Allowable Case Temperature ( C) 8 6 4 2 DC 8 6 4 2 4 8 2 6 24 Switching time (ns) t d(on) t d(off) t f t r 4 6 8 2 4 6 I F - Continuous Forward Current (A) Fig. 9 - Maximum Diode Forward Current vs. Case Temperature Fig. 2 - Typical IGBT Switching Time vs. I C,, V CC = 3 V, R g =, V GE = 5 V, L = 5 μh Revision: -Dec-7 5 Document Number: 93569 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT3FD6N 7 5 Energy (mj) 3 9 7 5 E OFF E ON Switching time (ns) t r t f t d(on) t d(off) 3 2 6 4 8 22 26 3 34 Fig. 3 - Typical Trench IGBT Energy Loss vs. I C,, V CC = 3 V, R g = 22, V GE = 5 V, L = 5 μh 2 23 26 29 32 35 38 4 44 47 5 R g (Ω) Fig. 6 - Typical Trench IGBT Switching Time vs.r g,, V CC = 3 V, I C = 3 A, V GE = 5 V, L = 5 μh t d(on) t d(off) Switching time (ns) t f t r 2 6 4 8 22 26 3 34 Fig. 4 - Typical IGBT Switching Time vs. I C,, V CC = 3 V, R g = 22, V GE = 5 V, L = 5 μh 3 4 5 6 7 V CE (V) Fig. 7 - Trench IGBT Reverse Bias SOA T J = 75 C, V GE = 5 V, R g = 22 32 24 29 22 Energy (mj) 26 23 2 7 4 E OFF t rr (ns) 8 6 4 2 E ON 8 8 2 23 26 29 32 35 38 4 44 47 5 R g (Ω) Fig. 5 - Typical Trench IGBT Energy Loss vs.r g,, V CC = 3 V, I C = 3 A, V GE = 5 V, L = 5 μh 6 3 4 5 di F /dt (A/μs) Fig. 8 - Typical Diode Reverse Recovery Time vs. di F /dt, V rr = V, I F = 5 A Revision: -Dec-7 6 Document Number: 93569 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT3FD6N I rr (A) 28 26 24 22 2 8 6 4 2 8 6 4 2 3 4 5 Q rr (nc) 24 2 8 6 4 8 6 4 3 4 5 di F /dt (A/μs) di F /dt (A/μs) Fig. 9 - Typical Diode Reverse Recovery Current vs. di F /dt, V rr = V, I F = 5 A Fig. 2 - Typical Diode Reverse Recovery Charge vs. di F /dt, V rr = V, I F = 5 A Z thjc - Thermal Impedance Junction to Case ( C/W)....5.2..5.2. DC...... t - Rectangular Pulse Duration (s) Fig. 2 - Maximum Thermal Impedance Z thjc Characeristics (Trench IGBT) Z thjc - Thermal Impeadnce Junction to Case ( C/W)....5.2..5.2. DC...... t - Rectangular Pulse Duration (s) Fig. 22 - Maximum Thermal Impedance Z thjc Characeristics (Diode) Revision: -Dec-7 7 Document Number: 93569 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
VS-GT3FD6N ORDERING INFORMATION TABLE Device code VS- G T 3 F D 6 N 2 3 4 5 6 7 8 - product 2 - Insulated gate bipolar transistor 3 - T = trench IGBT 4 - Current rating (3 = 3 A) 5 - F = 3-level circuit configuration 6 - Package indicator D = dual INT-A-PAK low profile 7 - Voltage rating (6 = 6 V) 8 - N = ultrafast CIRCUIT CONFIGURATION 5 6 Q D 7 8 2 9 Q2 Q3 D2 D3 D5 D6 4 2 Q4 D4 3 Dimensions LINKS TO RELATED DOCUMENTS www.vishay.com/doc?9555 Revision: -Dec-7 8 Document Number: 93569 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Outline Dimensions DIAP Low Profile - 4 Leads DIMENSIONS in millimeters 3.5 M5 screwing depth max. 8 7.5 2.8 x.5 5 ±.5 2.9 ±.5 48 ±.5 48 ±.5 27 ±.5 27 ±.5 2 5. ±.5 6 ±.5 7.2 62 ± 48 ±.3 27 ±.4 5 ±.4 5 6 8 7 9 2 7 ±.5 8.2 ±.5 Ø 6.4 93 ±.3 8 ± Revision: -Nov-4 Document Number: 9555 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
Outline Dimensions ECONO3 4 Pack DIMENSIONS in millimeters and inches 22 2 2 9 8 7 6 5 23 24 4 3 25 26 2 2 3 4 5 6 7 8 9 Revision: 2-Apr-6 Document Number: 95686 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?9
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