AOP68 Complementary Enhancement Mode Field Effect Transistor General Description The AOP68 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP68 is Pb-free (meets ROHS & Sony 29 specifications). AOP68L is a Green Product ordering option. AOP68 and AOP68L are electrically identical. Features n-channel p-channel V DS (V) = 4V -4V I D = 6.3A (V GS =V) -.A (V GS = -V) < 33mΩ (V GS =V) < 4mΩ (V GS = -V) < 46mΩ (V GS =4.V) < 63mΩ (V GS = -4.V) D2 D S2 G2 S G 2 3 4 8 7 6 D2 D2 D D G2 S2 G S PDIP-8 n-channel p-channel Absolute Maximum Ratings T A =2 C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Units Drain-Source Voltage V DS 4-4 V Gate-Source Voltage V GS ± ± V Continuous Drain T A =2 C 6.3 -. Current A T A =7 C I D -4.4 A Pulsed Drain Current B I DM - T A =2 C 2. 2. P D Power Dissipation T A =7 C.6.6 W Junction and Storage Temperature Range T J, T STG - to - to C Thermal Characteristics: n-channel and p-channel Parameter Maximum Junction-to-Ambient A t s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Maximum Junction-to-Ambient A t s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Steady-State Symbol Device Typ Max Units n-ch 37 C/W R θja n-ch 74 9 C/W R θjl n-ch 28 4 C/W p-ch 3 C/W R θja p-ch 73 9 C/W R θjl p-ch 32 4 C/W
AOP68 N Channel Electrical Characteristics (T J =2 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =2µA, V GS =V 4 V I DSS T J = C I GSS Gate-Body leakage current V DS =V, V GS = ±V na V GS(th) Gate Threshold Voltage V DS =V GS I D =2µA 2.3 3 V I D(ON) On state drain current V GS =V, V DS =V A Zero Gate Voltage Drain Current Static Drain-Source On-Resistance V DS =32V, V GS =V V GS =V, I D =6.3A V GS =4.V, I D =A T J =2 C 4 24. 33 33.7 46 mω g FS Forward Transconductance V DS =V, I D =6.3A 22 S V SD Diode Forward Voltage I S =A,V GS =V.77 V I S Maximum Body-Diode Continuous Current 6.3 A DYNAMIC PARAMETERS C iss Input Capacitance 44 pf C oss Output Capacitance V GS =V, V DS =3V, f=mhz 9 pf C rss Reverse Transfer Capacitance 37 pf R g Gate resistance V GS =V, V DS =V, f=mhz 2.7 Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge 9.2 nc Q g (4.V) Total Gate Charge 4.6 nc V GS =V, V DS =V, I D =6.3A Q gs Gate Source Charge.6 nc Q gd Gate Drain Charge 2. nc t D(on) Turn-On DelayTime 4.3 ns t r Turn-On Rise Time V GS =V, V DS =V, R L =3Ω, 3.4 ns t D(off) Turn-Off DelayTime R GEN =3Ω ns t f Turn-Off Fall Time 2.8 ns t rr Body Diode Reverse Recovery Time I F =6.3A, di/dt=a/µs 2.2 ns Q rr Body Diode Reverse Recovery Charge I F =6.3A, di/dt=a/µs.8 nc A: The value of R θja is measured with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =2 C. The value in any given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6 are obtained using 8 µs pulses, duty cycle.% max. E. These tests are performed with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =2 C. The SOA curve provides a single pulse rating. Rev : Aug µa mω THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
AOP68 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL I D (A) 3 2 V V 4.V 4V I D (A) V DS =V 2 C V GS =3.V 2 C 2 3 4 Fig : On-Region Characteristics 2 2. 3 3. 4 4. V GS (Volts) Figure 2: Transfer Characteristics.8 (mω) 4 3 V GS =4.V V GS =V Normalized On-Resistance.6.4.2 V GS =V I D =6.3A V GS =4.V I D =A I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage.8 2 7 2 7 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 8.E+ 7 I D =6.3A.E+ 6.E- 2 C (mω) 4 3 2 C I S (A).E-2.E-3 2 C 2 C.E-4 2 4 6 8 V GS (Volts) Figure : On-Resistance vs. Gate-Source Voltage.E-..2.4.6.8. V SD (Volts) Figure 6: Body-Diode Characteristics
AOP68 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL V GS (Volts) 8 6 4 2 V DS =3V I D = 6.3A Capacitance (pf) 8 6 4 C oss Crss C iss 2 4 6 8 Q g (nc) Figure 7: Gate-Charge Characteristics 3 4 Figure 8: Capacitance Characteristics I D (Amps)... limited T J(Max) = C T A =2 C µs µs ms ms s s.s DC Power (W) 4 3 T J(Max) = C T A =2 C.. Figure 9: Maximum Forward Biased Safe Operating Area (Note E)... Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance. D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja = C/W In descending order D=.,.3,.,.,.2,., single pulse Single Pulse P D T on T...... Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance
AOP68 P-Channel Electrical Characteristics (T J =2 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =-2µA, V GS =V -4 V I DSS Zero Gate Voltage Drain Current V DS =-32V, V GS =V - T J = C - µa I GSS Gate-Body leakage current V DS =V, V GS =±V ± na V GS(th) Gate Threshold Voltage V DS =V GS I D =-2µA - -.9-3 V I D(ON) On state drain current V GS =-V, V DS =-V - A Static Drain-Source On-Resistance V GS =-V, I D =-.A V GS =-4.V, I D =-4.6A 34.7 4 mω T J =2 C 6 7.6 63 mω g FS Forward Transconductance V DS =-V, I D =-.A 2 S V SD Diode Forward Voltage I S =-A,V GS =V -.7 - V I S Maximum Body-Diode Continuous Current -. A DYNAMIC PARAMETERS C iss Input Capacitance 67 pf C oss Output Capacitance V GS =V, V DS =-V, f=mhz 43 pf C rss Reverse Transfer Capacitance 63 pf R g Gate resistance V GS =V, V DS =V, f=mhz 6. Ω SWITCHING PARAMETERS Q g (V) Total Gate Charge (V) 4.2 nc Q g (4.V) Total Gate Charge (4.V) 7. nc V GS =-V, V DS =-V, I D =-.A Q gs Gate Source Charge 2.2 nc Q gd Gate Drain Charge 4. nc t D(on) Turn-On DelayTime 7.7 ns t r Turn-On Rise Time V GS =-V, V DS =-V, R L =3.6Ω, 8 ns t D(off) Turn-Off DelayTime R GEN =3Ω 26. ns t f Turn-Off Fall Time. ns t rr Body Diode Reverse Recovery Time I F =-.A, di/dt=a/µs 2.9 ns Q rr Body Diode Reverse Recovery Charge I F =-.A, di/dt=a/µs 4.9 nc A: The value of R θja is measured with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =2 C. The A: value The in value any of given R θja application is measured depends with the on device the user's mounted specific on board in 2 FR-4 design. board The with current 2oz. Copper, rating is in based a still on air the environment t s thermal with Tresistance A =2 C. The value rating. in any a given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. B: C. Repetitive The R rating, pulse width limited by junction temperature. θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. C. The static R θja is characteristics the sum of the in thermal Figures impedence to 6,2,4 from are junction obtained to using lead R 8 θjl µs and pulses, lead duty to ambient. cycle.% max. E. D. These static tests characteristics are performed in with Figures the device to 6,2,4 mounted are on obtained 2 FR-4 using board 8 µs with pulses, 2oz. duty Copper, cycle in.% a still max. air environment with T A =2 C. The SOA E. These curve tests provides are performed a single pulse with the rating. device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =2 C. The SOA Rev : curve Aug provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
AOP68 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL -I D (A) 3 2 -V -V -6V -4.V -4V -3.V -I D (A) 2 V DS =-V 2 C V GS =-3V 2 C 2 3 4 - Fig : On-Region Characteristics. 2 2. 3 3. 4 4. -V GS (Volts) Figure 2: Transfer Characteristics (mω) 6 4 4 3 3 V GS =-4.V V GS =-V 2 4 6 8 -I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Normalized On-Resistance.8.6.4.2.8 V GS =-V I D =-.A V GS =-4.V I D =-4.6A 2 7 2 7 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature (mω) 6 4 8 6 4 2 C 2 C I D =-.A 2 3 4 6 7 8 9 -V GS (Volts) Figure : On-Resistance vs. Gate-Source Voltage -I S (A).E+.E+.E-.E-2.E-3.E-4.E-.E-6 2 C 2 C..2.4.6.8. -V SD (Volts) Figure 6: Body-Diode Characteristics
AOP68 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 8 V DS =-3V I D =-.A 8 C iss -V GS (Volts) 6 4 2 Capacitance (pf) 6 4 C rss C oss -Q g (nc) Figure 7: Gate-Charge Characteristics 3 4 - Figure 8: Capacitance Characteristics I D (Amps)... limited T J(Max) = C T A =2 C ms s s DC µs µs ms.s Power (W) 4 3 T J(Max) = C T A =2 C.. Figure 9: Maximum Forward Biased Safe Operating Area (Note E)... Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance. D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja = C/W Single Pulse In descending order D=.,.3,.,.,.2,., single pulse P D T on T..... Pulse. Width (s) Figure : Normalized Maximum Transient Thermal Impedance