Features. = +25 C, Vdc = +7V

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Transcription:

amplifiers Typical Applications The is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT Functional Diagram Features Ultra Low Phase Noise: -7 dbc/hz @ khz Noise Figure: 6 db Gain: 9 db Psat: +25 dbm 5 Ohm Matched Input/Output Single Supply Voltage: +7V @ 3mA Hermetically Sealed Module Field Replaceable sma Connectors -55 C to +85 C Operating Temperature General Description The is a GaAs HBT Ultra Low Noise Amplifier in a miniature, hermetic module designed to operate between 7 and GHz. This high dynamic range amplifier module provides 9 db of gain, 6 db noise figure and up to +25 dbm of output power with a single supply of +7V. The ultra low phase noise contribution of -7 dbc/hz at khz offset, enables superior modulation accuracy within transceiver architectures. The wideband distributed amplifier I/O s are internally matched to 5 Ohms and DC blocked for robust performance. The module features removable sma connectors which can be detached to allow direct connection of the I/O pins to a microstrip or coplanar circuit. Electrical Specifications, T A = +25 C, Vdc = +7V Parameter Min. Typ. Max. Units Frequency Range 7 - GHz Vdc Range 6 7 8 V Gain 5 9 db Gain Variation Over Temperature.2 db/ C Noise Figure 6 db Input Return Loss 2 db Output Return Loss 5 db Output Power for db Compression (PdB) 2 22 dbm Saturated Output Power (Psat) 25 dbm Output Third Order Intercept (IP3) 33 dbm Phase Noise @ Hz, Psat, 9 GHz -6 dbc/hz Phase Noise @ khz, Psat, 9 GHz -7 dbc/hz Phase Noise @ khz, Psat, 9 GHz -8 dbc/hz Supply Current 3 36 ma -

Broadband, Gain & Return Loss Gain vs. Temperature 2 RESPONSE (db) 5-5 - -5-2 S2 S S22 GAIN (db) 8 6 4 Amplifiers -25 3 5 7 9 3 5 2 Input Return Loss vs. Temperature Output Return Loss vs. Temperature RETURN LOSS (db) -5 - -5 RETURN LOSS (db) -5 - -5-2 -2-25 -25 Reverse Isolation vs. Temperature Noise Figure vs. Temperature ISOLATION (db) - -2-3 -4 NOISE FIGURE (db) 8 6 4 2-55 C -5-2

Output PdB vs. Temperature Output Psat vs. Temperature 3 3 amplifiers PdB db) 26 22 8 4 Psat (db) 26 22 8 4 Output IP3 vs. Temperature 4 Phase Noise at Pout = dbm @ 9 GHz - - IP3 (db) 36 32 28 24 SSB PHASE NOISE (dbc/hz) -2-3 -4-5 -6-7 -8-9 2-2 2 3 4 5 OFFSET FREQUENCY (Hz) Phase Noise at Pout = PdB @ 9 GHz SSB PHASE NOISE (dbc/hz) - - -2-3 -4-5 -6-7 -8-9 -2 2 3 4 5 OFFSET FREQUENCY (Hz) Phase Noise at Pout = Psat @ 9 GHz SSB PHASE NOISE (dbc/hz) - - -2-3 -4-5 -6-7 -8-9 -2 2 3 4 5 OFFSET FREQUENCY (Hz) - 3

Absolute Maximum Ratings Bias Supply Voltage (V) +8V RF Input Power (RFIN) +2 dbm Continuous Pdiss (T = 85 C) 2.88W Storage Temperature -65 to +5 C Operating Temperature -55 to +85 C ESD Sensitivity (HBM) Class A ELECTROSTATIC sensitive DEVICE OBserVE HANDLING precautions Amplifiers Pin Descriptions Pin Number Function Description Interface Schematic rfin & RF Ground RF input connector, coaxial female, field replaceable. This pin is AC coupled and matched to 5 Ohms. 2 RFOUT & RF Ground RF output connector, coaxial female, field replaceable. This pin is AC coupled and matched to 5 Ohms. 3 Vdc Power supply voltage for the amplifier. 4 GND Power supply ground. - 4

Outline Drawing amplifiers Package Information Package Type C-6 Package Weight 7 gms [] [] ± gms Tolerance NOTES:. package, leads, COVER material: KOVAR 2. finish: GOLD plate OVER NICKEL plate. 3. all DimeNSIONS are IN INCHES [millimeters]. 4. TOleraNCES: 4..XX = ±.2 4.2.XXX = ±. 5. mark LOT NUMBER ON.8 X.25 label WHere SHOWN, WITH.3 min TEXT HEIGHT. - 5

Notes: Amplifiers - 6