MUSES Rail-to-Rail Output, High Quality Audio, Dual Operational Amplifier GENERAL DESCRIPTION The MUSES is a Rail-to-Rail output High quality audio operational amplifier, which is optimized for high-end audio and portable audio applications. The MUSES features.nv/ Hz low noise, MHz wide gain bandwidth,.9% low distortion, Ω drive capability, - C to + C operating temperature range, and various reliabilities and conveniences are improved. It is the best for audio preamplifiers, active filters, microphone amplifiers, and line amplifiers with excellent sound. FEATURES Operating Voltage +.V to +V ±.V to ±.V Low Noise.nV/ Hz typ. at f=khz.μvrms typ. (Hz to khz) Output Current ma typ. (Capability of driving Ω loads) GBW MHz typ. Low Distortion.9% typ. at V+=+V, Vo=.Vrms Slew Rate Bipolar Technology Package Outline V/µs typ. Operating Temperature Range - to + C APPLICATIONS Portable Audio Home Audio PC Audio Car Audio SOP JEDEC mil, SSOP-A DFN-W (ESON-W) (.mm x.mm) PACKAGE OUTLINE MUSESE (SOP JEDEC mil (EMP)) MUSESKW (DFN-W (ESON-W)) PIN CONFIGLATION A B DFN-W (ESON-W) Top View SOP JEDEC mil, SSOP-A A B MUSESVA (SSOP-A). A OUTPUT. A -INPUT. A +INPUT. V-. B +INPUT. B -INPUT. B OUTPUT.V+ Bottom View Exposed Pad About Exposed Pad Connect the Exposed Pad on the GND. I/V Digital Input DA Converter I/V LPF Buff Analog Output DAC Output I/V converter + LPF circuit MUSES and this logo are trademarks of New Japan Radio Co., Ltd. Ver.9. - -
MUSES ABSOLUTE MAXIMUM RATINGS (Ta= C) PARAMETER SYMBOL RATING UNIT Supply Voltage V + (V + /V - ) + (.) V Input Voltage V IN + (Note) V Differential Input Voltage V ID V Power Dissipation P D SOP JEDEC mil: 9 SSOP-A: (Note) DFN-W: (Note) mw : (Note) Operating Temperature Range T opr - to + C Storage Temperature Range T stg - to + C (Note) For supply Voltages less than + V, the maximum input voltage is equal to the Supply Voltage. (Note) EIA/JEDEC STANDARD Test board (. x. x.mm, layers, FR-) mounting. (Note) EIA/JEDEC STANDARD Test board (. x. x.mm, layers, FR-) mounting. The PAD connecting to GND in the center part on the back (Note) EIA/JEDEC STANDARD Test board (. x. x.mm, layers, FR-, Applying a thermal via hole to a board based on JEDEC standard JESD-) mounting. The PAD connecting to GND in the center part on the back RECOMMENDED OPERATING CONDITION (Ta= C) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Supply Voltage V + +. - +. V V + /V -. -. V ELECTRIC CHARACTERISTICS V + = +V, V - =V, Ta= C, R L to V + /, unless otherwise specified PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Supply Current I CC No Signal, R L = -. ma Power Dissipation P D No Signal -. mw Input Offset Voltage V IO Rs= -.. mv Input Bias Current I B -. μa Input Offset Current I IO - na Open-Loop Voltage Gain A V R L =k to V+/, V O =. to.v 9 - db Common Mode Input Voltage Range V ICM CMR 9dB. -. V Common Mode Rejection Ratio CMR R S =Ω 9 - db Supply Voltage Rejection Ratio SVR R S =Ω 9 - db Maximum Output Voltage Maximum Output Voltage R L =kω to V.9.9 - V R L =kω to V -.. V R L =Ω to V + /..9 - V R L =Ω to V + / -.. V Output Source Current I SOURCE V O =V + -.V - ma Output Sink Current I SINK V O =.V - ma Gain Bandwidth Product GBW f=khz - - MHz Slew Rate SR R L =kω - - V/μs Total Harmonic Distortion + Noise THD+N Gain=,V O =.Vrms,R L =kω,f=khz -.9 - % Channel Separation CS Gain=, R S =kω, R L =kω, f=khz - - db Input Noise Voltage e n f=khz -. - nv/ Hz Input Noise Voltage V n f=hz to khz -. - μvrms - - Ver.9.
MUSES NOTE. The closed gain should be db or higher to prevent the oscillation. Unity gain follower application may cause the oscillation.. Minimize the load capacitor for the better performance. A large load capacitor CL reduces the frequency response and causes oscillation or ringing.. Be careful to the circuit of high impedance. Input bias current influences an input noise and output offset voltage. POWER DISSIPATION vs. AMBIENT TEMPERATURE IC is heated by own operation and possibly gets damage when the junction power exceeds the acceptable value called Power Dissipation P D. The dependence of the MUSES P D on ambient temperature is shown in Fig. The plots are depended on following two points. The first is P D on ambient temperature ºC, which is the maximum power dissipation. The second is W, which means that the IC cannot radiate any more. Conforming the maximum junction temperature Tjmax to the storage temperature Tstg derives this point. Fig. is drawn by connecting those points and conforming the P D lower than ºC to it on ºC. The P D is shown following formula as a function of the ambient temperature between those points. Dissipation Power P D = Tjmax - Ta ja [W] ( to Ta=ºC) Where, ja is heat thermal resistance which depends on parameters such as package material, frame material and so on. Therefore, P D is different in each package. While, the actual measurement of dissipation power on MUSES is obtained using following equation. (Actual Dissipation Power) = (Supply Current Icc) X (Supply Voltage V + V-) (Output Power Po) The MUSES should be operated in lower than P D of the actual dissipation power. To sustain the steady state operation, take account of the Dissipation Power and thermal design. Fig DFN-W layers Power Dissipation Pd [mw] SOP SSOP-A DFN-W layers Ambient Temperature Ta [ C] Ver.9. - -
MUSES PACKAGE OUTLINE (ESON-W) - - Ver.9.
MUSES TYPICAL CHARACTERISTICS (V - =V, V CM =V + /, unless otherwise specified) Equivalent Input Noise Voltage [nv/ Hz] Equivalent Input Noise Current [pa/ Hz] Voltage Noise Density / Current Noise Density vs. Frequency, R L =kω, Current Noise Voltage Noise k k k THD+N [%]... THD+N vs. Output Voltage V + =V, R L =kω, Gain=, f=khz f=khz f=hz f=hz... Output Voltage [Vrms] THD+N vs. Output Voltage, R L =kω, Gain=, THD+N vs. Output Voltage V + =.V, R L =kω, Gain=,.. THD+N [%].. f=khz f=hz f=hz f=khz THD+N [%].. f=khz f=khz f=hz f=hz... Output Voltage [Vrms]... Output Voltage [Vrms] db Voltage Gain/Phase vs. Frequency V + =V, G V =db, R L =kω, C L =pf db Voltage Gain/Phase vs. Frequency V + =V, G V =db, R L =kω, Gain Ta=-ºC Phase - Ta=-ºC - - - - - k k k M M M Phase [deg] Gain C L =pf C L =pf Phase C L =pf - - - C L =pf - C L =pf - - k k k M M M Phase [deg] Ver.9. - -
MUSES TYPICAL CHARACTERISTICS (V - =V, V CM =V + /, unless otherwise specified) db Voltage Gain/Phase vs. Frequency, G V =db, R L =kω, C L =pf db Voltage Gain/Phase vs. Frequency, G V =db, R L =kω, Gain Ta=-ºC Phase - Ta=-ºC - - - - - k k k M M M Phase [deg] Gain C L =pf C L =pf Phase C L =pf - - - - C L =pf - C L =pf - k k k M M M Phase [deg] db Voltage Gain/Phase vs. Frequency V + =.V, G V =db, R L =kω, C L =pf db Voltage Gain/Phase vs. Frequency V + =.V, G V =db, R L =kω, Gain Ta=-ºC Phase - Ta=-ºC - - - - - k k k M M M Phase [deg] Gain C L =pf C L =pf Phase C L =pf - - - - C L =pf - C L =pf - k k k M M M Phase [deg] 9 - - -9 db Voltage Gain vs. Frequency G V =db, R L =kω,, C L =pf V + =V V + =.V - k k M M 9 - - -9 db Voltage Gain vs. Frequency G V =db, R L =kω,, C L =pf V + =V V + =.V - k k M M - - Ver.9.
MUSES TYPICAL CHARACTERISTICS (V - =V, V CM =V + /, unless otherwise specified) Common-Mode Rejection Ratio [db] CMR vs. Frequency V + =V V + =.V k k k M M Supply Voltage Rejection Ratio [db] SVR+ SVR vs. Frequency SVR- k k k M M Channel Separation vs. Frequency Pulse Response, Gain=+, R L =kω, C L =pf Channel Separation [db] V + =V Voltage [.V/div] Ta=-ºC k k k M M Time [μs/div] Voltage [.V/div] Pulse Response, Gain=+, R L =kω, C L =pf C L =pf Supply Current [ma] Supply Current vs. Supply Voltage V CM =V + / Ta=-ºC Time [μs/div] + + +9 + + Supply Voltage V + [V] Ver.9. - -
MUSES TYPICAL CHARACTERISTICS (V - =V, V CM =V + /, unless otherwise specified) Supply Current vs. Temperature V CM =V + /. Input Offset Voltage vs. Supply Voltage V CM =V + / Supply Current [ma] V + =V V + =.V Input Offset Voltage [mv]. -. -. Ta=-ºC - - Ambient Temperature [ºC] -. + + +9 + + Supply Voltage V + [V]. Input Offset Voltage vs. Temperature V CM =V + /. Input Offset Voltage vs. Common-Mode Input Voltage V + =V Input Offset Voltage [mv].. -. -. V + =.V V + =V Input Offset Voltage [mv]. -. -. Ta=-ºC -. - - Ambient Temperature [ºC] -. Common-Mode Input Voltage [V]. Input Offset Voltage vs. Common-Mode Input Voltage. Input Offset Voltage vs. Common-Mode Input Voltage V + =.V Input Offset Voltage [mv]. -. -. Ta=-ºC Input Offset Voltage [mv]. -. -. Ta=-ºC -. -...... Common-Mode Input Voltage [V] -. -....9..... Common-Mode Input Voltage [V] - - Ver.9.
MUSES TYPICAL CHARACTERISTICS (V - =V, V CM =V + /, unless otherwise specified) Input Bias Current [μa] Input Bias Current vs. Temperature V CM =V + / V + =.V V + =V - - Ambient Temperature [ºC] Input Offset Current [na] 9 Input Offset Current vs. Temperature V CM =V + / V + =.V V + =V - - Ambient Temperature [ºC] Input Bias Current vs. Common-Mode Input Voltage V + =V, V CM =V + / Input Bias Current vs. Common-Mode Input Voltage, V CM =V + / Ta=-ºC Ta=-ºC Input Bias Current [μa] Input Bias Current [μa] - Common-Mode Input Voltage [V] - -...... Common-Mode Input Voltage [V] Input Bias Current [μa] Input Bias Current vs. Common-Mode Input Voltage V + =.V, V CM =V + / Ta=-ºC - -....9..... Common-Mode Input Voltage [V] Common Mode and Supply Voltage Rejection Ratio [db] 9 Common Mode and Supply Volrage Rejection Ratio vs. Temperature SVR CMR () - - Ambient Temperature [ºC] Ver.9. - 9 -
MUSES TYPICAL CHARACTERISTICS (V - =V, V CM =V + /, unless otherwise specified) Open-Loop Voltage Gain vs. Temperature, R L =kω Output Current vs. Output Voltage V + =V Open-Loop 9 Output Voltage [V] Ta=-ºC - - Ambient Temperature [ºC] Output Current [ma] Output Voltage [V]..... Output Current vs. Output Voltage Ta=-ºC Output Current [ma] Output Voltage [V].......9.. Output Current vs. Output Voltage V + =.V Ta=-ºC Output Current [ma] Output Source Current I SOURCE [ma] Output Source Current vs. Temperature V O =V + -.V V + =V V + =.V - - Ambient Temperature [ 度 ] Output Sink Current I SINK [ma] Output Sink Current vs. Temperature V O =V - +.V V + =V V + =.V - - Ambient Temperature [ 度 ] - - Ver.9.
MUSES TYPICAL CHARACTERISTICS (V - =V, V CM =V + /, unless otherwise specified) Output Voltage vs. Load Resistance V + =+V, R L connected to V. Output Voltage vs. Load Resistance, R L connected to V Output Voltage [V] Ta=-ºC Ta=-ºC k k Load Resistance [Ω] 9 Output Voltage [mv] Output Voltage [V].. Ta=-ºC.. Ta=-ºC k k Load Resistance [Ω] Output Voltage [mv] Output Voltage [V].......9.. Output Voltage vs. Load Resistance V + =+.V, R L connected to V Ta=-ºC Ta=-ºC k k Load Resistance [Ω] Output Voltage [mv] Output Voltage [V] - - - Output Voltage vs. Load Resistance V + /V - =±V, R L connected to V Ta=-ºC Ta=-ºC - k k Load Resistance [Ω] Output Voltage [V]..... -. -. -. -. Output Voltage vs. Load Resistance V + /V - =±.V, R L connected to V Ta=-ºC Ta=-ºC -. k k Load Resistance [Ω] Output Voltage [V].... -. -. -. Output Voltage vs. Load Resistance V + /V - =±.V, R L connected to V Ta=-ºC Ta=-ºC -. k k Load Resistance [Ω] Ver.9. - -
MUSES APPLICATION CIRCUIT Analog Input Gain Stage Att Buff AD Converter Digital Output Digital Input DA Converter I/V I/V LPF Buff Analog Output (Fig.: ADC Input) (Fig.:DAC Output) HPF DAC (Fig.:DAC LPF Circuit ) NOTE Precaution for counterfeit semiconductor products We have recently detected many counterfeit semiconductor products that have very similar appearances to our operational amplifier MUSES in the world-wide market.in most cases, it is hard to distinguish them from our regular products by their appearance, and some of them have very poor quality and performance. They can not provide equivalent quality of our regular product, and they may cause breakdowns or malfunctions if used in your systems or applications. We would like our customers to purchase MUSES through our official sales channels : our sales branches, sales subsidiaries and distributors. Please note that we hold no responsibilities for any malfunctions or damages caused by using counterfeit products. We would appreciate your understanding. [CAUTION] The specifications on this databook are only given for information, without any guarantee as regards either mistakes or omissions. The application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. - - Ver.9.
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