ESD and EMI Filter Devices - 7pF EMI Filter Array with ESD Protection RoHS Pb GREEN Description Littelfuse s integrates 4 and 6 EMI filters (C-R-C) into a small, low-profile µdfn package with each filter providing greater than -20dB attenuation at 1GHz. Additionally, each I/O is capable of shunting ±12kV ESD strikes (IEC61000-4-2, contact discharge) away from sensitive electronic components. The performance of this small, slim design makes it extremely suitable for mobile handsets, PDA s, and notebook computers. Pinout Features µdfn-08 1 4 8 EMI filtering of frequencies from 800MHz to 3GHz Greater than -20dB attenuation (TYP) at 1GHz ESD, IEC61000-4-2, ±12kV contact, ±1kV air Small, low-profile μdfn (JEDEC MO-229) package (TYP 0.mm height) -04UTG-1 Applications µdfn-12 1 6 12 7-06UTG-1 Keypad Interface for Portable Electronics LCD and Camera Display Interfaces for Handsets Connector Interfaces for Handsets PDA s Digital Cameras Notebook Computers Functional Block Diagram Application Example -04UTG-1-06UTG-1 Dx: -04 Silicon Protection Array 1 8 1 12 Input LCD Module Controller 2 7 3 6 4 2 11 3 10 4 9 Outside World 4 1 8-04UTG-1 (µdfn) D1 D3 D4 8 6 7 Signal Ground 1
ESD and EMI Filter Devices - Absolute Maximum Ratings Symbol Parameter Value Units T OP Operating Temperature -40 to 12 C T STOR Storage Temperature - to 10 C CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Thermal Information Parameter Rating Units Storage Temperature Range - to 10 C Maximum Junction Temperature 10 C Maximum Lead Temperature (Soldering 10s) 260 C Electrical Characteristics (T OP =2ºC) Parameter Symbol Test Conditions Min Typ Max Units Reverse Standoff Voltage V RWM.0 V Breakdown Voltage V BR I R =1mA 7.0 V Reverse Leakage Current I LEAK V RWM =V 0.1 1.0 µa Resistance R A I R =10mA 80 100 120 Ω Diode Capacitance 1,2 C D V R =2.V,f=1MHz 7 pf Line Capacitance 1,2 C L V R =2.V,f=1MHz 11 14 17 pf ESD Withstand Voltage 1 V ESD IEC61000-4-2 (Contact Discharge) ±12 kv IEC61000-4-2 (Air Discharge) ±1 kv Cutoff Frequency 3 F -3dB Above this frequency, appreciable attenutation occurs 20 MHz Notes: 1 Parameter is guaranteed by design and/or device characterization. 2 Total line capacitance is two times the diode capacitance (C D ). 3 0Ω source and 0Ω load termination Insertion Loss (S21) Analog Crosstalk (S41) 0 0 - -10-1 -30 Attenuation (db) -1-20 -2 Attenuation (db) -4-60 -7-30 -90-3 -40-4 -10-120 -13-0 10 100 1000 Frequency (MHz) 10 100 1000 Frequency (MHz) 2 Please refer to http://www.littelfuse.com for current information.
Temperature TVS Diode Arrays (SPA Diodes) ESD and EMI Filter Devices - Line Capacitance vs. DC Bias Soldering Parameters Capacitance (pf) 30.0 28.0 26.0 24.0 22.0 20.0 18.0 16.0 14.0 12.0 10.0 8.0 6.0 4.0 2.0 0.0 0.0 0. 1.0 1. 2.0 2. 3.0 3. 4.0 4..0 DC Bias (V) Reflow Condition Pb Free assembly - Temperature Min (T s(min) ) 10 C Pre Heat - Temperature Max (T s(max) ) 200 C - Time (min to max) (t s ) 60 180 secs Average ramp up rate (Liquidus) Temp (T L ) to peak 3 C/second max T S(max) to T L - Ramp-up Rate 3 C/second max Reflow - Temperature (T L ) (Liquidus) 217 C - Temperature (t L ) 60 10 seconds Peak Temperature (T P ) 260 +0/- C Time within C of actual peak Temperature (t p ) 20 40 seconds Ramp-down Rate 6 C/second max Time 2 C to peak Temperature (T P ) 8 minutes Max. Do not exceed 260 C Product Characteristics Lead Plating Lead Material Lead Coplanarity Substitute Material Body Material Pre-Plated Frame Copper Alloy 0.0004 inches (0.102mm) Silicon Molded Epoxy Flammability UL 94 V-0 T P T L T S(max) T S(min) t S Preheat Ramp-up t P t L Critical Zone TL to TP Ramp-down Notes : 1. All dimensions are in millimeters 2. Dimensions include solder plating. 3. Dimensions are exclusive of mold flash & metal burr. 4. Blo is facing up for mold and facing down for trim/form, i.e. reverse trim/form.. Package surface matte finish VDI 11-13. 2 time to peak temperature Time Part Numbering System SP 6003 ** U T G -1 TVS Diode Arrays (SPA Diodes) Series Number of Channels 04 = 4 Channel µdfn-08 06 = 6 Channel µdfn-12 G= Green T= Tape & Reel Package µdfn-08 (1.7x1.3mm) µdfn-12 (2.x1.3mm) Ordering Information Part Number Package Size Marking Min. Order Qty. -04UTG-1 µdfn-08 1.7x1.3mm C114 3000-06UTG-1 µdfn-12 2.x1.3mm C116YYWW 3000 3
ESD and EMI Filter Devices - Package Dimensions μdfn-08 E D 8 7 6 Pin 1 Marking Pin 1 Locator r 8X M 0.10 C A B e C0.2 PAD b E2 μdfn-08 JEDEC MO-229 Millimeters Inches Min Max Min Max A 0.4 0. 0.018 0.022 A1 0.00 0.0 0.000 0.002 A3 0.12 REF 0.006 REF Top View K 8 7 6 Bottom View L b 0.1 0.2 0.006 0.010 D 1.60 1.80 0.063 0.071 1.10 1.30 0.043 0.01 E 1.2 1.4 0.049 0.07 0. 10 C E2 0.30 0.0 0.012 0.020 e 0.400 BSC 0.016 BSC 0. 08 C K 0.20 0.008 L 0.1 0.3 0.006 0.014 A1 Side View A A3 Package Dimensions μdfn-12 E D 12 11 10 9 8 7 Pin 1 Marking 6 Top View Pin 1 Locator e 12X M 0.10 C A B C0.2 PAD 12 11 10 9 Bottom View 6 8 7 b L E2 μdfn-12 JEDEC MO-229 Millimeters Inches Min Max Min Max A 0.4 0. 0.018 0.022 A1 0.00 0.0 0.000 0.002 A3 0.102 REF 0.004 REF b 0.1 0.2 0.006 0.010 D 2.40 2.60 0.09 0.103 0.10 C 1.90 2.10 0.07 0.083 E 1.2 1.4 0.00 0.08 0. 0 C E2 0.30 0.0 0.012 0.020 e 0.400 BSC 0.016 BSC Side View A1 A A3 L 0.1 0.3 0.006 0.014 4 Please refer to http://www.littelfuse.com for current information.
TVS Diode Arrays (SPA Devices) ESD and EMI Filter Devices - Embossed Carrier Tape & Reel Specification μdfn-08 8.00± 0.30 0.10 22.12 W 2.00±0.0 ø1.± 0.01 0.00 3.0±0.10 1.7±0.10 ø13.22 ø70. ø1.37 ø179.90 ø1.00± 0.2 0.00 1.47±0.0 A0 0.6±0.0 K0 1.8±0.10 B0 ø8.11 ø1.7 1.46 9.04 T=0.20±0.03 24.32 1.11 Embossed Carrier Tape & Reel Specification μdfn-12 8.00±0.20 2.00±0.0 ø1.0± 0.10 1.7±0.10 3.0±0.0 22.12 ø13.22 ø70. ø1.37 ø179.90 ø1.00± 0.0 0.20±0.0 1.±0.10 A0 12º MAX 0.80±0.10 K0 2.80±0.10 B0 12º MAX ø8.11 ø1.7 24.32 1.46 9.04 1.11