INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >2 khz in resonant mode). Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-packaged with HEXFRED TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations Industry standard TO-247C package Lead-Free Benefits Generation -4 IGBT's offer highest efficiencies available IGBT's optimized for specific application conditions HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's bsolute Maximum Ratings IRG4PC3FDPbF G C E n-channel Fast CoPack IGBT TO-247C PD - 95556 V CES = 6V V CE(on) typ. =.59V @V GE = 5V, I C = 7 Parameter Max. Units V CES Collector-to-Emitter Voltage 6 V I C @ T C = 25 C Continuous Collector Current 3 I C @ T C = C Continuous Collector Current 7 I CM Pulsed Collector Current 2 I LM Clamped Inductive Load Current 2 I F @ T C = C Diode Continuous Forward Current 2 I FM Diode Maximum Forward Current 2 V GE Gate-to-Emitter Voltage ± 2 V P D @ T C = 25 C Maximum Power Dissipation P D @ T C = C Maximum Power Dissipation 42 W T J Operating Junction and-55 to +5 T STG Storage Temperature Range C Soldering Temperature, for sec. 3 (.63 in. (.6mm) from case) Mounting Torque, 6-32 or M3 Screw. lbf in (. N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case - IGBT.2 R θjc Junction-to-Case - Diode 2.5 R θcs Case-to-Sink, Flat, Greased Surface.24 C/W R θj Junction-to-mbient, typical socket mount 4 Wt Weight 6 (.2) g (oz) www.irf.com 7/26/4
Electrical Characteristics @ (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)CES Collector-to-Emitter Breakdown Voltageƒ 6 V V GE = V, I C = 25µ V (BR)CES/ T J Temperature Coeff. of Breakdown Voltage.69 V/ C V GE = V, I C =.m V CE(on) Collector-to-Emitter Saturation Voltage.59.8 I C = 7 V GE = 5V.99 V I C = 3 See Fig. 2, 5.7 I C = 7, T J = 5 C V GE(th) Gate Threshold Voltage 3. 6. V CE = V GE, I C = 25µ V GE(th) / T J Temperature Coeff. of Threshold Voltage - mv/ C V CE = V GE, I C = 25µ g fe Forward Transconductance 6. S V CE = V, I C = 7 I CES Zero Gate Voltage Collector Current 25 µ V GE = V, V CE = 6V 25 V GE = V, V CE = 6V, T J = 5 C V FM Diode Forward Voltage Drop.4.7 V I C = 2 See Fig. 3.3.6 I C = 2, T J = 5 C I GES Gate-to-Emitter Leakage Current ± n V GE = ±2V Switching Characteristics @ (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge (turn-on) 5 77 I C = 7 Q ge Gate - Emitter Charge (turn-on) 7.9 2 nc V CC = 4V See Fig. 8 Q gc Gate - Collector Charge (turn-on) 9 28 V GE = 5V t d(on) Turn-On Delay Time 42 t r Rise Time 26 ns I C = 7, V CC = 48V t d(off) Turn-Off Delay Time 23 35 V GE = 5V, R G = 23Ω t f Fall Time 6 23 Energy losses include "tail" and E on Turn-On Switching Loss.63 diode reverse recovery. E off Turn-Off Switching Loss.39 mj See Fig. 9,,, 8 E ts Total Switching Loss 2.2 3.9 t d(on) Turn-On Delay Time 42 T J = 5 C, See Fig. 9,,, 8 t r Rise Time 27 ns I C = 7, V CC = 48V t d(off) Turn-Off Delay Time 3 V GE = 5V, R G = 23Ω t f Fall Time 3 Energy losses include "tail" and E ts Total Switching Loss 3.2 mj diode reverse recovery. L E Internal Emitter Inductance 3 nh Measured 5mm from package C ies Input Capacitance V GE = V C oes Output Capacitance 74 pf V CC = 3V See Fig. 7 C res Reverse Transfer Capacitance 4 ƒ =.MHz t rr Diode Reverse Recovery Time 42 6 See Fig. ns 8 2 4 I F = 2 I rr Diode Peak Reverse Recovery Current 3.5 6. See Fig. 5.6 5 V R = 2V Q rr Diode Reverse Recovery Charge 8 8 See Fig. nc 22 6 6 di/dt 2/µs di (rec)m /dt Diode Peak Rate of Fall of Recovery 8 See Fig. /µs During t b 2 7 2 www.irf.com
25 Load Current ( ) 2 5 6% of rated voltage Duty cycle: 5% T sink = 9 C Gate drive as specified Turn-on losses include effects of reverse recovery Power Dissipation = 24W 5. f, Frequency (khz) Fig. - Typical Load Current vs. Frequency (Load Current = I RMS of fundamental) I C, Collector-to-Emitter Current () T J = 5 C V GE = 5V V CC = 5V 2µs PULSE WIDTH 5µs PULSE WIDTH 5 6 7 8 9 2 3 V CE, Collector-to-Emitter Voltage (V) I C, Collector-to-Emitter Current () T J = 5 C V GE, Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3
Maximum DC Collector Current () 4 3 2 V GE = 5V V CE, Collector-to-Emitter Voltage (V) 2.5 2..5 V GE = 5V 8µs PULSE WIDTH I C = 34 I C = 7 I C = 8.5 25 5 75 25 5 T, Case Temperature ( C) C Fig. 4 - Maximum Collector Current vs. Case Temperature. -6-4 -2 2 4 6 8 2 4 6 T, Junction Temperature ( C) J Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thjc ). D =.5.2..5.2. SINGLE PULSE (THERML RESPONSE) Notes:. Duty factor D = t / t 2. 2. Peak T J = P DMx Z thjc + T C..... t, Rectangular Pulse Duration (sec) P DM t t 2 Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
C, Capacitance (pf) 2 6 2 8 4 V GE = V f = MHz Cies = Cge + Cgc + Cce Cres = Cce Coes = Cce + Cgc C ies C oes C res SHORTED V GE, Gate-to-Emitter Voltage (V) 2 6 2 8 4 V CE I C = 4V = 7 V CE, Collector-to-Emitter Voltage (V) 2 3 4 5 6 Q g, Total Gate Charge (nc) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switchig Losses (mj) 2.2 2. 2..9 V CC = 48V V GE = 5V I C = 7.8 2 4 6 8 R, Gate Resistance ( Ω ) G Total Switchig Losses (mj) I C = 34 I C = 7 I C = 8.5 R G = 23 Ω V GE = 5V V CC. = 48V -6-4 -2 2 4 6 8 2 4 6 T, Junction Temperature ( C) J Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. - Typical Switching Losses vs. Junction Temperature www.irf.com 5
Total Switchig Losses (mj) 8. 6. 4. 2. R G = 23 Ω T J = 5 C V CC = 48V V GE = 5V I, Collector-to-Emitter Current () C V GE = 2V T = 25 C J SFE OPERTING RE. 2 3 4 I C, Collector-to-Emitter Current () Fig. - Typical Switching Losses vs. Collector-to-Emitter Current V, Collector-to-Emitter Voltage (V) CE Fig. 2 - Turn-Off SO Instantaneous Forward Current - I F () T J = 5 C.4.8.2.6 2. 2.4 Forward Voltage Drop - V FM (V) Fig. 3 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com
6 V R = 2V V R = 2V 2 t rr - (ns) 8 I F = 24 I F = 2 I = 6. F I IRRM - () I F = 6. I F = 2 I = 24 F 4 di f /dt - (/µs) Fig. 4 - Typical Reverse Recovery vs. di f /dt di f /dt - (/µs) Fig. 5 - Typical Recovery Current vs. di f /dt 6 V R = 2V V R = 2V Q RR - (nc) 4 2 I F = 2 I F = 24 di(rec)m/dt - (/µs) I F = 6. I F = 2 I F = 6. I F = 24 di f /dt - (/µs) Fig. 6 - Typical Stored Charge vs. di f /dt Fig. 7 - Typical di (rec)m /dt vs. di f /dt www.irf.com 7 di f /dt - (/µs)
+Vge 9% Vge Same type device as D.U.T. Vce Ic % Vce Ic 9% Ic 8% of Vce 43µF D.U.T. td(off) tf 5% Ic t+5µs Eoff = Vce ic dt t Fig. 8a - Test Circuit for Measurement of I LM, E on, E off(diode), t rr, Q rr, I rr, t d(on), t r, t d(off), t f t t2 Fig. 8b - Test Waveforms for Circuit of Fig. 8a, Defining E off, t d(off), t f % +Vg GTE VOLTGE D.U.T. +Vg Ic trr trr Qrr id dt = tx % Ic Vcc td(on) t Vce tr 9% Ic 5% Vce Ipk Ic t2 Eon = ie dt Vce t t2 DUT VOLTGE ND CURRENT Vpk tx % Vcc Irr DIODE REVERSE RECOVERY ENERGY % Irr DIODE RECOVERY WVEFORMS t4 Erec Vd id dt = t3 Vcc t3 t4 Fig. 8c - Test Waveforms for Circuit of Fig. 8a, Fig. 8d - Test Waveforms for Circuit of Fig. 8a, Defining E on, t d(on), t Defining E r rec, t rr, Q rr, I rr 8 www.irf.com
Vg GTE SIGNL DEVICE UNDER TEST CURRENT D.U.T. VOLTGE IN D.U.T. CURRENT IN D t t t2 Figure 8e. 8' V L V * c D.U.T. - 48V R L = 48V 4 X I C @25 C 5V 6µF V Figure 9. Figure 2. www.irf.com 9
Notes: Repetitive rating: V GE =2V; pulse width limited by maximum junction temperature (figure 2) V CC =8%(V CES ), V GE =2V, L=µH, R G = 23Ω (figure 9) ƒpulse width 8µs; duty factor.%. Pulse width 5.µs, single shot. TO-247C Package Outline Dimensions are shown in millimeters (inches) TO-247C Part Marking Information EXMPLE: THIS IS N IRFPE3 WITH SSEMBLY LOT CODE 5657 SSEMBLED ON WW 35, 2 IN THE SSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNTIONL RECTIFIER LOGO SSEMBLY LOT CODE IRFPE3 35H 56 57 PRT NUMBER DTE CODE YER = 2 WEEK 35 LINE H IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 9245, US Tel: (3) 252-75 TC Fax: (3) 252-793 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 7/4 www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/