N-Channel Enhancement Mode Field Effect Transistor General Description The AOD436 uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD436 is Pb-free (meets ROHS & Sony 259 specifications). AOD436L is a Green Product ordering option. AOD436 and AOD436L are electrically identical. Features V DS (V) = 3V I D = 6A (V GS = 1V) R DS(ON) < 7.5mΩ (V GS = 1V) R DS(ON) < 13mΩ (V GS = 4.5V) TO-252 D-PAK D G D S Top View Drain Connected to Tab G S Absolute Maximum Ratings T A =25 C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol V DS V GS Maximum 3 ±2 Units V V Continuous Drain T C =25 C G 6 Current B,G T C =1 C B I D 43 A Pulsed Drain Current Avalanche Current C I DM I AR 13 3 A Repetitive avalanche energy L=.1mH C E AR 113 mj T C =25 C 5 P D Power Dissipation B T C =1 C 25 W T A =25 C 2.5 Power Dissipation A P DSM T A =7 C 1.6 W Junction and Storage Temperature Range T J, T STG -55 to 175 C Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t 1s 14.2 2 C/W Maximum Junction-to-Ambient A R θja Steady-State 39 5 C/W Maximum Junction-to-Case C Steady-State R θjc 2 3 C/W
Electrical Characteristics (T J =25 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =25µA, V GS =V 3 V I DSS Zero Gate Voltage Drain Current V DS =24V, V GS =V 1 T J =55 C 5 µa I GSS Gate-Body leakage current V DS =V, V GS = ±2V 1 na V GS(th) Gate Threshold Voltage V DS =V GS I D =25µA 1 1.8 3 V I D(ON) On state drain current V GS =1V, V DS =5V 85 A V GS =1V, I D =2A 5.4 7.5 R DS(ON) Static Drain-Source On-Resistance T J =125 C 8.1 9.7 mω V GS =4.5V, I D =2A 9.8 13 mω g FS Forward Transconductance V DS =5V, I D =2A 88 S V SD Diode Forward Voltage I S =1A,V GS =V.71 1 V I S Maximum Body-Diode Continuous Current 85 A DYNAMIC PARAMETERS C iss Input Capacitance 152 1825 pf C oss Output Capacitance V GS =V, V DS =15V, f=1khz 36 pf C rss Reverse Transfer Capacitance 214 pf R g Gate resistance V GS =V, V DS =V, f=1mhz.47.7 Ω SWITCHING PARAMETERS Q g (1V) Total Gate Charge 31.9 39 nc Q g (4.5V) Total Gate Charge 16.2 2 nc V GS =4.5V, V DS =15V, I D =2A Q gs Gate Source Charge 5 nc Q gd Gate Drain Charge 9.6 nc t D(on) Turn-On DelayTime 7 ns t r Turn-On Rise Time V GS =1V, V DS =15V, R L =.75Ω, 11.6 ns t D(off) Turn-Off DelayTime R GEN =3Ω 24.2 ns t f Turn-Off Fall Time 7.7 ns t rr Body Diode Reverse Recovery Time I F =2A, di/dt=1a/µs 23.8 3 ns Q rr Body Diode Reverse Recovery Charge I F =2A, di/dt=1a/µs 15.7 nc A: The value of R θja is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C. The Power dissipation P DSM is based on steady-state R θja and the maximum allowed junction temperature of 15 C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175 C may be used if the PCB or heatsink allows it. B. The power dissipation P D is based on T J(MAX) =175 C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature T J(MAX) =175 C. D. The R θja is the sum of the thermal impedence from junction to case R θjc and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <3 µs pulses, duty cycle.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25 C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. Rev 4 : July 25 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 1V 6 4.V 5 V DS =5V I D (A) 2 3.5V I D (A) 4 3 125 C 1 V GS =3V 2 1 25 C 1 2 3 4 5 V DS (Volts) Fig 1: On-Region Characteristics 1.5 2 2.5 3 3.5 4 4.5 V GS (Volts) Figure 2: Transfer Characteristics 12 1.8 R DS(ON) (mω) 11 1 9 8 7 6 5 V GS =4.5V V GS =1V Normalized On-Resistance 1.6 1.4 1.2 1 I D =2A V GS =1V V GS =4.5V 4 5 1 15 2 25 3 I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage.8 25 5 75 1 125 15 175 Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 16 1.E+2 R DS(ON) (mω) 12 8 I D =2A 125 C I S (A) 1.E+1 1.E+ 1.E-1 1.E-2 1.E-3 125 C 25 C 4 25 C 2.E+ 4.E+ 6.E+ 8.E+ 1.E+1 V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.E-4 1.E-5..2.4.6.8 1. 1.2 V SD (Volts) Figure 6: Body-Diode Characteristics
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1 8 V DS =15V I D =2A 24 2 C iss V GS (Volts) 6 4 Capacitance (pf) 16 12 8 C oss 2 4 5 1 15 2 25 3 35 Q g (nc) Figure 7: Gate-Charge Characteristics C rss 5 1 15 2 25 3 V DS (Volts) Figure 8: Capacitance Characteristics I D (Amps) 1 1 1 R DS(ON) limited 1ms 1ms.1s 1s 1µs 1µs Power (W) 1 8 6 4 T J(Max) =15 C T A =25 C 1 T J(Max) =15 C T A =25 C 1s DC 2.1.1 1 1 1 V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F).1.1.1 1 1 1 1 Pulse Width (s) Figure 1: Single Pulse Power Rating Junction-to- Ambient (Note F) Z θja Normalized Transient Thermal Resistance 1 1.1.1 D=T on /T T J,PK =T A +P DM.Z θja.r θja R θja =5 C/W Single Pulse In descending order D=.5,.3,.1,.5,.2,.1, single pulse P D T on T.1.1.1.1.1.1 1 1 1 1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS I D (A), Peak Avalanche Current 6 4 2 t A T A =25 C L I D = BV V DD Power Dissipation (W) 12 1 8 6 4 2.1.1.1.1 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 25 5 75 1 125 15 175 T CASE ( C) Figure 13: Power De-rating (Note B) 1 8 Current rating I D (A) 6 4 2 25 5 75 1 125 15 175 T CASE ( C) Figure 14: Current De-rating (Note B)
ALPHA & OMEGA SEMICONDUCTOR, LTD. Document No. Version Title PD-148 rev C AOD436 Marking Description DPAK PACKAGE MARKING DESCRIPTION D 4 3 6 D 4 3 6 Standard product Green product NOTE: LOGO - AOS LOGO D436 - PART NUMBER CODE. F&A - FOUNDRY AND ASSEMBLY LOCATION Y - YEAR CODE W - WEEK CODE. L T - ASSEMBLY LOT CODE PART NO. AOD436 AOD436L DESCRIPTION Standard product Green product CODE D436 D436 Rev. A
ALPHA & OMEGA SEMICONDUCTOR, LTD. TO-252 (DPAK) Tape and Reel Data TO-252 (DPAK) Carrier Tape TO-252 (DPAK) Reel TO-252 (DPAK) Leader / Trailer & Orientation