Preferred Device Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for half wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Glass Passivated Junctions with Center Gate Fire for Greater Parameter Uniformity and Stability Small, Rugged, Thermowatt Constructed for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 8 Volts A Surge Current Capability PbFree Packages are Available* SCRs 5 AMPERES RMS 5 thru 8 VOLTS A G K MARKING DIAGRAM 4 CASE 1A STYLE N65xG AYWW 1 x = 4, 5, 7, 8 or 9 A = Assembly Location Y = Year WW = Work Week G = PbFree Device PIN ASSIGNMENT 1 Cathode Anode Gate 4 Anode ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 8 1
MAXIMUM RATINGS (T J = 5 C unless otherwise noted) *Peak Repetitive OffState Voltage (Note 1) (Gate Open, Sine Wave 5 to 6 Hz, T J = 5 to 15 C) N654 N655 N657 N658 N659 Rating Symbol Value Unit V DRM, V RRM 5 1 4 6 8 On State Current RMS (18 Conduction Angles; T C = 85 C) I T(RMS) 5 A Average On State Current (18 Conduction Angles; T C = 85 C) I T(AV) 16 A Peak Non repetitive Surge Current (1/ Cycle, Sine Wave 6 Hz, T J = 1 C) I TSM 5 A Forward Peak Gate Power (Pulse Width 1. s, T C = 85 C) P GM W Forward Average Gate Power (t = 8. ms, T C = 85 C) P G(AV).5 W Forward Peak Gate Current (Pulse Width 1. s, T C = 85 C) I GM. A Operating Junction Temperature Range T J 4 to +15 C Storage Temperature Range T stg 4 to +15 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. V DRM and V RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit *Thermal Resistance, JunctiontoCase R JC 1.5 C/W *Maximum Lead Temperature for Soldering Purposes 1/8 in from Case for 1 Seconds T L 6 C V ELECTRICAL CHARACTERISTICS (T C = 5 C unless otherwise noted.) OFF CHARACTERISTICS * Peak Repetitive Forward or Reverse Blocking Current (V AK = Rated V DRM or V RRM, Gate Open) T J = 5 C T J = 15 C ON CHARACTERISTICS Characteristic Symbol Min Typ Max Unit I DRM, I RRM * Forward OnState Voltage (Note ) (I TM = 5 A) V TM 1.8 V * Gate Trigger Current (Continuous dc) T C = 5 C (V AK = 1 Vdc, R L = 1 ) T C = 4 C I GT * Gate Trigger Voltage (Continuous dc) (V AK = 1 Vdc, R L = 1, T C = 4 C) V GT 1. 1.5 V Gate Non Trigger Voltage (V AK = 1 Vdc, R L = 1, T J = 15 C) V GD. V * Holding Current T C = 5 C (V AK = 1 Vdc, Initiating Current =, Gate Open) T C = 4 C I H * Turn On Time (I TM = 5 A, I GT = 5 dc) t gt 1.5. s Turn Off Time (V DRM = rated voltage) (I TM = 5 A, I R = 5 A) (I TM = 5 A, I R = 5 A, T J = 15 C) DYNAMIC CHARACTERISTICS t q Critical Rate of Rise of Off State Voltage (Gate Open, Rated V DRM, Exponential Waveform) dv/dt 5 V/ s *Indicates JEDEC Registered Data.. Pulse Test: Pulse Width s, Duty Cycle %. 9. 18 15 5 1. 75 4 8 A s
Voltage Current Characteristic of SCR + Current Anode + Symbol V DRM I DRM V RRM I RRM V TM I H Parameter Peak Repetitive Off State Forward Voltage Peak Forward Blocking Current Peak Repetitive Off State Reverse Voltage Peak Reverse Blocking Current Peak On State Voltage Holding Current I RRM at V RRM on state Reverse Blocking Region (off state) Reverse Avalanche Region V TM I H + Voltage I DRM at V DRM Forward Blocking Region (off state) Anode T C, MAXIMUM CASE TEMPERATURE ( C) 1 1 11 1 9 α = 6 α α = CONDUCTION ANGLE 9 18 dc P (AV), AVERAGE POWER (WATTS) 4 16 8. α α = CONDUCTION ANGLE α = 6 9 18 T J = 15 C dc 8 4. 8. 1 16 I T(AV), ON STATE FORWARD CURRENT (AMPS) Figure 1. Average Current Derating 4. 8. 1 16 I T(AV), AVERAGE ON STATE FORWARD CURRENT (AMPS) Figure. Maximum OnState Power Dissipation
ORDERING INFORMATION N654 N654G N655 N655G N655T N655TG N657 N657G N657T N657TG N658 N658G N658TG N659 N659G N659T N659TG Device Package Shipping (PbFree) (PbFree) (PbFree) (PbFree) (PbFree) (PbFree) (PbFree) (PbFree) (PbFree) 6
PACKAGE DIMENSIONS CASE 1A7 ISSUE AA H Q Z L V G B 4 1 N D A K F T U C T SEATING PLANE J S R NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 198.. CONTROLLING DIMENSION: INCH.. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A.57.6 14.48 15.75 B.8.45 9.66 1.8 C.16.19 4.7 4.8 D.5.5.64.88 F.14.147.61.7 G.95.15.4.66 H.11.155.8.9 J.14..6.55 K.5.56 1.7 14.7 L.45.6 1.15 1.5 N.19.1 4.8 5. Q.1.1.54.4 R.8.11.4.79 S.45.55 1.15 1.9 T.5.55 5.97 6.47 U..5. 1.7 V.45 1.15 Z.8.4 STYLE : PIN 1. CATHODE. ANODE. GATE 4. ANODE 7