Part Ordering code Marking Remarks MMBT2222A MMBT2222A-GS18 or MMBT2222A-GS08 1P Tape and Reel

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Small Signal Transistor (NPN) Features NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. This transistor is also available in the TO-92 case with the type designation MPS2222A. Mechanical Data Case: SOT-2 Plastic Package Weight: approx. 8 mg Packaging Codes/Options: GS18 / 10 k per 1" reel (8 mm tape), 10 k/box 1 2 1856 GS08 / k per 7" reel (8 mm tape), 15 k/box Pinning: 1 = Base, 2 = Emitter, = Collector Parts Table Part Ordering code Marking Remarks -GS18 or -GS08 1P Tape and Reel Absolute Maximum Ratings T amb = 25 C, unless otherwise specified Parameter Test condition Symbol Value Unit Collector - base voltage V CBO 75 V Collector - emitter voltage V CEO 40 V Emitter - base voltage V EBO 6.0 V Collector current I C 600 ma Power dissipation on FR-5 board 1), T A = 25 C P tot 225 mw Derate above 25 C P tot 1.8 mw/k on alumina substrate 2), T A = 25 C P tot 00 mw Derate above 25 C P tot 2.4 mw/k 1) FR-5 = 1.0 x 0.75 x 0.062 in. 2) Alumina = 0.4 x 0. x 0.024 in. 99.5 % alumina. Maximum Thermal Resistance Parameter Test condition Symbol Value Unit Thermal resistance junction to FR-5 board R thja 556 K/W ambient air Alumina substrate R thja 417 K/W Junction temperature T j 150 C Storage temperature range T S - 55 to + 150 C 1

VISHAY Electrical DC Characteristics Parameter Test condition Symbol Min Typ. Max. Unit DC current gain V CE = 10 V, I C = 0.1 ma h FE 5 V CE = 10 V, I C = 1 ma h FE 50 V CE = 10 V, I C = 10 ma h FE 75 h FE 5 T A = - 55 C V CE = 10 V, I C = 150 ma 1) h FE 100 00 V CE = 10 V, I C = 500 ma 1) h FE 40 V CE = 1.0 V, I C = 150 ma 1) h FE 50 Collector - base breakdown I C = 10 µa, I E = 0 V (BR)CBO 75 V voltage Collector - emitter breakdown voltage 1) I C = 10 µa, I B = 0 V (BR)CEO 40 V 15 ma 0. Emitter - base breakdown I E = 10 µa, I C = 0 V (BR)EBO 6.0 V voltage Collector - emiter saturation I C = 150 ma, I B = V CEsat V voltage 1) I C = 500 ma, I B = 50 ma V CEsat 1.0 V Base - emitter saturation voltage I C = 150 ma, I B = 15 ma V BEsat 0.6 1.2 V I C = 500 ma, I B = 50 ma V BEsat 2.0 V Collector-emitter cut-off current V EB = V, V CE = 60 V I CEX 10 na Collector-base cut-off current V CB = 60 V, I E = 0 I CBO 10 na V CB = 50 V, I E = 0, T A = 125 C I CBO 10 µa Base cut - off current V EB = V, V CE = 60 V I BL 20 na Emitter-base cut-off current V EB = V DC, I C = 0 I EBO 100 na 1) Pulse Test: Pulse width 00 µs - Duty cycle 2 % Electrical AC Characteristics Parameter Test condition Symbol Min Typ. Max Unit Current gain - bandwidth product Output capacitance Input capacitance Noise figure Input impedance Small signal current gain V CE = 20 V, I C = 20 ma, f = 100 MHz V CB = 10 V, f = 1 MHz, I E = 0 V EB = 0.5 V, f = 1 MHz, I C = 0 V CE = 10 V, I C = 100 µa, R S = 1 kω, f T 00 MHz C ob 8 pf C ibo 25 pf NF 4.0 db h ie 2 8.0 kω h ie 0.25 1.25 kω h fe 50 00 h fe 75 75 2

Voltage feedback ratio V CE = 10 V, I C = 1 ma h re 50 00 h re 75 75 Output admittance h oe 5.0 5 µs h oe 25 200 µs Collector base time constant I E = 20 ma, V CB = 20 V, r b C CC 150 ps f = 1.8 MHz Delay time (see fig.1) I B1 = 15 ma, I C = 150 ma, V CC = 0 V, V BE = - 0.5 V t d 10 ns Rise time (see fig.1) Storage time (see fig.2) Fall time (see fig.2) Parameter Test condition Symbol Min Typ. Max Unit I B1 = 15 ma, I C = 150 ma, V CC = 0 V, V BE = - 0.5 V I B1 = I B2 = 15 ma, I C = 150 ma, V CC = 0 V I B1 = I B2 = 15 ma, I C = 150 ma, V CC = 0 V t r 25 ns t s 225 ns t s 60 ns 1to100µs, DUTY CYCLE 2 % +0V +16V 0-2V <2ns Scope rise time < 4ns 18564 1kΩ 200 Ω C *) S <10pF *) Total shunt capacitance of test jig, connectors and oscilloscope 1to100µs, DUTY CYCLE 2 % +16V 0-14V 18565 <20ns 1kΩ -4V +0V 200 Ω C *) S <10pF *) Total shunt capacitance of test jig, connectors and oscilloscope Figure 1. Turn-On Time Figure 2. Turn-Off Time

VISHAY Package Dimensions in mm (Inches).1 (.122) 2.8 (.110) Top View 1 2 0.95 (.07) 0.95 (.07) max 0.1 (.004) 1.4 (.056) 1. (.052) ISO Method A 0.175 (.007) 0.125 (.005) 1.15 (.045) 0.95 (.07) 2.6 (.102) 2.4 (.094) 17418 Mounting Pad Layout 0.8 (0.01) 0.9 (0.05) 2.0 (0.079) 0.95 (0.07) 0.95 (0.07) 17417 4

Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use products for any unintended or unauthorized application, the buyer shall indemnify against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 55, D-74025 Heilbronn, Germany Telephone: 49 (0)711 67 281, Fax number: 49 (0)711 67 242 5