Features. Upconversion & Downconversion Applications MIXERS - SINGLE & DOUBLE BALANCED - SMT

Similar documents
Features. Upconversion & Downconversion Applications MIXERS - SINGLE & DOUBLE BALANCED - SMT

Features. = +25 C, IF = 200 MHz, LO = 0 dbm, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V*

OBSOLETE HMC915LP4E. GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram. General Description

Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter

Parameter Min. Typ. Max. Units

Features. = +25 C, IF= 100 MHz, LO= +15 dbm* Parameter Min. Typ. Max. Min. Typ. Max. Units

HMC694LP4 / 694LP4E. Variable gain amplifiers - ANALOG - smt. GaAs MMIC ANALOG VARIABLE GAIN AMPLIFIER, 6-17 GHz. Typical Applications

Features. = +25 C, Vdd1 = Vdd2 = +3.5V, Idd = 80 ma [2]

Features. = +25 C, Vdd = +5V, Rbias = 10 Ohms*

Features. = +25 C, Vcc = +8V

Features. = +25 C, Vs = +5V. Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range MHz Gain

Features. = +25 C, Vdd= 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz

HMC948LP3E POWER DETECTORS - SMT. 54 db, LOGARITHMIC DETECTOR, 1-23 GHz. Typical Applications. Features. Functional Diagram. General Description

HMC1040LP3CE. Amplifiers - Low Noise - smt. GaAs phemt MMIC LOW NOISE AMPLIFIER, GHz. Features. Typical Applications. General Description

Features. = +25 C, 50 Ohm System, Vcc= +5V

Features. = +25 C, Vdd= +12V, Vgg2= +5V, Idd= 400 ma*

HMC1013LP4E. SDLVAs - SMT. SUCCESSIVE DETECTION LOG VIDEO AMPLIFIER (SDLVA), GHz

Features. = +25 C, Vcc = +5V. Parameter Min. Typ. Max. Units Fo Fo/2 RFOUT RFOUT/2

= +25 C, 50 Ohm System, Vdd = +5V

Features OBSOLETE. = +25 C, 50 Ohm system, Vdd = +5V. Parameter Frequency Min. Typ. Max. Units GHz

Features. = +25 C, Vcc1, Vcc2 = +3V. Parameter Min. Typ. Max. Units Fo Fo/2 RFOUT RFOUT/2 RFOUT/4

HMC618ALP3E AMPLIFIERS - LOW NOISE - SMT. GaAs SMT phemt LOW NOISE AMPLIFIER, GHz. Typical Applications. Features. Functional Diagram

Features. = +25 C, 50 Ohm system

HMC662LP3E POWER DETECTORS - SMT. 54 db, LOGARITHMIC DETECTOR, 8-30 GHz. Typical Applications. Features. Functional Diagram. General Description

HMC695LP4 / HMC695LP4E

Features. = +25 C, Vdd = +7V, Idd = 1340 ma [1]

Gain Control Range db

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vcc= 5V

Features OBSOLETE. Saturated Output Power (Psat) dbm Output Third Order Intercept (IP3) dbm Supply Current (Idd) ma

HMC486LP5 / 486LP5E LINEAR & POWER AMPLIFIERS - SMT. SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER, 7-9 GHz. Typical Applications.

Features OBSOLETE. LO Port Return Loss db RF Port Return Loss db

Parameter Min. Typ. Max. Units Frequency Range GHz

= +25 C, Vdd = Vs= P/S= +5V

Features. = +25 C, Vcc = +5V. Parameter Min. Typ. Max. Units Fo Fo/2 RFOUT RFOUT/2

OBSOLETE. = +25 C, With Vdd = +5V & Vctl = 0/+5V. Parameter Frequency Min. Typ. Max. Units DC - 4 GHz GHz Attenuation Range DC - 10 GHz 10 db

OBSOLETE. = +25 C, Vdd = Vs= +5V, Vctl= 0/ +5V. Parameter Frequency Min. Typ. Max. Units DC GHz 37. db Gain (Maximum Gain State)

Features. = +25 C, Vcc = +3V

Features. = +25 C, Vdd = +5V, 5 dbm Drive Level

Features OBSOLETE. = +25 C, Vcc= 5V [1]

Features. Output Power: 2 dbm Typical Spurious Suppression: >20 dbc SSB Phase Noise: khz Offset Test Instrumentation

Features OBSOLETE. = +25 C, IF= 1 GHz, USB, LO = +15 dbm [1]

Features. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz GHz. Attenuation Range GHz 15.

HMC368LP4 / 368LP4E FREQ. MULTIPLIERS - ACTIVE - SMT. SMT GaAs PHEMT MMIC AMP-DOUBLER-AMP, 9-16 GHz OUTPUT. Typical Applications.

Features OBSOLETE. = +25 C, With 0/+5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units

Features. = +25 C, Vcc1, Vcc2 = +5V. Parameter Min. Typ. Max. Units Fo Fo/2 RFOUT RFOUT/2 RFOUT/4

v3.99 Attenuation vs. Frequency over Vctrl V -1.6 V -.6 V. V Attenuation vs. Vctrl1 Over 1 GHz, Vctrl2

Frequency vs. Tuning Voltage, Vcc = +4.2V 17 Frequency vs. Tuning Voltage, T= 25 C FREQUENCY (GHz) FREQUENCY (GHz) Vcc = 4.

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vcc1, Vcc2, Vcc3 = +5V. Parameter Min. Typ. Max. Units Frequency Range GHz

Features. = +25 C, Vcc = +3V

TEL: FAX: HMC3LP / 3LPE v.21 SMT GaAs HBT MMIC x ACTIVE FREQUENCY MULTIPLIER, GHz OUTPUT Evalua

OBSOLETE. Output Power for 1 db Compression dbm Output Third Order Intercept Point (Two-Tone Output Power= 12 dbm Each Tone)

Features OBSOLETE. = +25 C, Vcc1 = Vcc2 = +5V

SURFACE MOUNT PHEMT 2 WATT POWER AMPLIFIER,

OBSOLETE. Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz. Attenuation Range DC - 3 GHz 31 db

= +25 C, Vcc = +3.3V, Z o = 50Ω (Continued)

DC GHz GHz

Features. = +25 C, Vdd = +5V, Idd = 400mA [1]

Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz GHz Attenuation Range DC - 5.

OBSOLETE. Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC - 5.

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features. = +25 C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V. Parameter Min. Typ. Max. Units Fo Fo/4 RFOUT RFOUT/4

Features = +5V. = +25 C, Vdd 1. = Vdd 2

HMC705LP4 / HMC705LP4E

Features. Gain: 14.5 db. Electrical Specifications [1] [2] = +25 C, Rbias = 825 Ohms for Vdd = 5V, Rbias = 5.76k Ohms for Vdd = 3V

Features. = +25 C, Vcc =5V, Vpd = 5V. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max Units

HMC1095LP4E v db LSB GaAs MMIC 6-BIT 75 Ohms DIGITAL ATTENUATOR, DC - 3 GHz. Typical Applications. Functional Diagram. General Description

= +25 C, Vdd = Vs= P/S= +5V

HMC600LP4 / 600LP4E POWER DETECTORS - SMT. 75 db LOGARITHMIC DETECTOR / CONTROLLER MHz. Features. Typical Applications. General Description

= +25 C, IF = 2350 MHz, LO = +4 dbm, VDLO1, 2 = +3V, IDLO = 150 ma, VDRF = +3V, IDRF = 200mA, USB [1][2] Parameter Min. Typ. Max.

HMC540SLP3E v db LSB SILICON MMIC 4-BIT DIGITAL POSITIVE CONTROL ATTENUATOR, GHz

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Frequency vs. Tuning Voltage, Vcc = +5V OUTPUT FREQUENCY (GHz) Frequency vs. Tuning Voltage, T= 25 C OUTPUT F

Insertion Loss INSERTION LOSS () C +85C -4C Normalized Attenuation (Only Major States are Shown)

HMC662LP3E POWER DETECTORS - SMT. 54 db, LOGARITHMIC DETECTOR, 8-30 GHz. Typical Applications. Features. Functional Diagram. General Description

Features. = +25 C, IF = 100 MHz, LO = +13 dbm, LSB [1]

HMC412BMS8GE MIXER - SINGLE & DOUBLE BALANCED - SMT. Typical Applications. Features. Functional Diagram. General Description

Features. = +25 C, Vdd = +3V

HMC601LP4 / 601LP4E POWER DETECTORS - SMT. 75 db, FAST SETTLING, LOGARITHMIC DETECTOR / CONTROLLER MHz. Typical Applications.

Features

Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC GHz 31.5 db

HMC542LP4 / 542LP4E v

HMC656LP2E TO HMC658LP2E v

HMC478SC70 / 478SC70E v

Features. Pout: +9 dbm. Parameter Min. Typ. Max. Units

Features. = +25 C, Vcc = +5V, Z o = 50Ω, Bias1 = GND

Features. = +25 C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V. Parameter Min. Typ. Max. Units Fo Fo/2 RFOUT RFOUT/2 RFOUT/4

Features. = +25 C, Vcc1 = Vcc2 = 5V, Zo = 75 Ohm [1]

Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC GHz 31.5 db

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

7 GHz INTEGER N SYNTHESIZER CONTINUOUS (N = ), NON-CONTINUOUS (N = 16-54) Features

Features. = +25 C, Vcc (Dig), Vcc (Amp), Vcc (RF) = +5V

HMC468LP3 / 468LP3E v

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

Features db

Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED

HMC471MS8G / 471MS8GE. Features OBSOLETE. DC GHz GHz GHz GHz GHz

HMC602LP4 / 602LP4E POWER DETECTORS - SMT. 70 db, LOGARITHMIC DETECTOR / CONTROLLER, MHz

Features +3V +5V GHz

Transcription:

v1. Typical Applications The HMC688LP4(E) is Ideal for: Cellular/3G & LTE/WiMAX/4G Basestations & Repeaters GSM, CDMA & OFDM Transmitters and Receivers Features High Input IP3: +35 dbm Low Conversion Loss: 7.5 db Low LO Drive: Optimized for Low Side LO Input Upconversion & Downconversion Applications Functional Diagram 24 Lead 4x4mm SMT Package: 16mm 2 General Description Electrical Specifications, T A = +25 C, IF = 3 MHz, LO =, Vcc = Vcc1, 2, 3 = +5V, G_Bias = +2.5V* Parameter Min. Typ. Max. Units Frequency Range, RF 2. - 2.7 GHz Frequency Range, LO 1.7-2.4 GHz Frequency Range, IF DC - 7 MHz Conversion Loss 7.5 db Noise Figure (SSB) 8 db LO to RF Isolation 16 25 db LO to IF Isolation 2 27 db RF to IF Isolation 25 34 db IP3 (Input) 35 dbm 1 db Compression (Input) 25 dbm LO Drive Input Level (Typical) -9 to Supply Current Icc total 14 168 ma * Unless otherwise noted all measurements performed as downconverter with low side LO & IF = 3 MHz. The HMC688LP4(E) is a high dynamic range passive MMIC mixer with integrated LO amplifier in a 4x4 SMT QFN package covering 2. to 2.7 GHz. Excellent input IP3 performance of +35 dbm for down conversion is provided for 3G & 4G GSM/CDMA applications at an LO drive of. With an input 1 db compression of +25 dbm, the RF port will accept a wide range of input signal levels. Conversion loss is 7.5 db typical. The DC to 7 MHz IF frequency response will satisfy GSM/CDMA transmit or receive frequency plans. The HMC688LP4(E) is pin for pin compatible with the HMC689LP4(E) which is a 2. - 2.7 GHz mixer with LO amplifier optimized for high side LO applications. - 1 One Technology Way, P.O. Box 96, Norwood, MA 262-96

v1. Conversion Gain vs. Temperature Isolation CONVERSION GAIN (db) - -4 C Conversion Gain vs. LO Drive CONVERSION GAIN (db) IF Bandwidth (LO= 2.1 GHz) RESPONSE (db) - - -25-3 IF Return Loss Conversion Gain ISOLATION (db) - -3-4 Return Loss RETURN LOSS (db) - RF LO Input P1dB vs. Temperature P1dB (dbm) RF/IF LO/RF LO/IF -25 1.6 1.8 3.2 3.4 3 25 2 15-4 C -35.1.2.3.4.5.6.7.8.9 One Technology Way, P.O. Box 96, Norwood, MA 262-96 - 2

v1. Input IP3 vs. Temperature [1] 4 Input IP3 vs. LO Drive [1] 4 IP3 (dbm) 35 3 IP3 (dbm) 35 3 25-4 C 2 +2RF -2LO Response vs. Temperature [2] +2RF-2LO RESPONSE (dbc) 9 8 7 6 5-4 C 4 2 2.2 2.4 2.6 2.8 +3RF -3LO Response vs. Temperature [2] +3RF-3LO RESPONSE (dbc) 9 85 8 75 7-4 C 25 2 +2RF -2LO Response vs. LO Drive [2] +2RF-2LO RESPONSE (dbc) 9 8 7 6 5 4 2 2.2 2.4 2.6 2.8 +3RF -3LO Response vs. LO Drive [2] +3RF-3LO RESPONSE (dbc) 9 85 8 75 7 65 2 2.2 2.4 2.6 2.8 65 2 2.2 2.4 2.6 2.8 [1] Two-tone input power = +9 dbm each tone, 1 MHz spacing. [2] Referenced to RF Input Power at. - 3 One Technology Way, P.O. Box 96, Norwood, MA 262-96

v1. Upconverter Performance Conversion Gain vs. LO Drive Upconverter Performance Input IP3 vs. LO Drive [1] 4 CONVERSION GAIN (db) - Absolute Maximum Ratings RF / IF Input (Vcc1, 2, 3 = +5V) LO Drive (Vcc1, 2, 3 = +5V) Vcc1, 2, 3 Typical Supply Current vs. Vcc Vcc1, 2, 3 (V) +23 dbm + dbm +5.5V Channel Temperature 125 C Continuous Pdiss (T = 85 C) (derate 36.23 mw/ C above 85 C) Thermal Resistance (channel to ground paddle) 1.45 W 27.6 C/W Storage Temperature -65 to 15 C Operating Temperature -4 to +85 C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Icc total (ma) 4.75 13 5. 14 5.25 15 Downconverter will operate over full voltage range shown above. [1] Two-tone input power = +9 dbm each tone, 1 MHz spacing. IP3 (dbm) 35 3 25 MxN Spurious @ IF Port Harmonics of LO 2 nlo mrf 1 2 3 4 xx 2 26 52 3 1 28 41 22 66 2 78 68 63 64 68 3 115 93 99 76 95 4 129 >133 >133 12 121 RF Freq. = 2.5 GHz @ LO Freq. = 2.2 GHz @ All values in dbc below IF power level (1RF - 1LO). nlo Spur @ RF Port LO Freq. (GHz) 1 2 3 4 1.8 26 29 51 24 1.9 24 27 46 27 2. 22 23 55 27 2.1 21 2 38 23 2.2 22 19 34 22 2.3 22 18 36 21 2.4 24 17 39 22 2.5 26 16 39 25 2.6 27 16 39 29 2.7 28 18 37 3 LO = All values in dbc below input LO level measured at RF port. One Technology Way, P.O. Box 96, Norwood, MA 262-96 - 4

v1. Outline Drawing Package Information Part Number Package Body Material Lead Finish MSL Rating Package Marking [3] [1] H688 HMC688LP4 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 XXXX [2] H688 HMC688LP4E RoHS-compliant Low Stress Injection Molded Plastic % matte Sn MSL1 XXXX [1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 26 C [3] 4-Digit lot number XXXX NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY. 3. LEAD AND GROUND PADDLE PLATING: % MATTE TIN. 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE. 6. PAD BURR LENGTH SHALL BE.15mm MAX. PAD BURR HEIGHT SHALL BE.25mm MAX. 7. PACKAGE WARP SHALL NOT EXCEED.5mm 8. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN. - 5 One Technology Way, P.O. Box 96, Norwood, MA 262-96

v1. Pin Descriptions Pin Number Function Description Interface Schematic 1, 6, 7, 11-14, 18, 2, 23 N/C 2, 5, 15, 17 GND No connection. These pins may be connected to RF ground. Performance will not be affected. Package bottom must be connected to RF/DC ground. 3 RF 4 TAP 8,, 24 Vcc1, Vcc2, Vcc3 9 LO_BIAS 16 LO 19 G_BIAS This pin is matched single-ended 5 Ohm and DC shorted to ground through a balun. Center tap of secondary side of the internal RF balun. Short to ground with a zero ohms close to the IC. Power supply voltage. See application circuit for required external components. Adjust the LO buffer current through an external resistor. See application circuit for required external components. This pin is matched single-ended 5 Ohm and DC shorted to ground through a balun. External optional bias. See application circuit for required external components. Apply +2.5V for nominal performance. 21, 22 IFN, IFP Differential IF input / output pins matched to differential 5 Ohms. For applications not requiring operation to DC an off chip DC blocking capacitor should be used. One Technology Way, P.O. Box 96, Norwood, MA 262-96 - 6

v1. Evaluation PCB List of Materials for Evaluation PCB 12974 [1] Item J1 - J3 J4 - J7 C1 C4 Description SMA Connector DC Pin 1.8 pf Capacitor, 42 Pkg. 1.5 pf Capacitor, 42 Pkg. C7, C8 nf Capacitor, 42 Pkg. C, C12, C16, C18 1 nf Capacitor, 42 Pkg. C11, C15, C17, C21.1 µf Capacitor, 42 Pkg. C19 C2 L1 L2 R2 - R4 R9 T1 U1 PCB [2] 22 pf Capacitor, 42 Pkg. 4.7 µf Case A, Tantalum 7.5 nh Inductor, 42 Pkg. nh Inductor, 42 Pkg. Ohm Resistor, 42 Pkg. 243 Ohm Resistor, 63 Pkg. 1:1 Transformer - M/A-COM MABACT39 HMC688LP4(E) Downconverter 118162 Evaluation PCB [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Arlon 25R, FR4 The circuit board used in the application should use RF circuit design techniques. Signal lines should have 5 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. - 7 One Technology Way, P.O. Box 96, Norwood, MA 262-96

v1. Application Circuit One Technology Way, P.O. Box 96, Norwood, MA 262-96 - 8