STTH2W4TV1 Turbo 2 ultrafast high voltage rectifier Datasheet production data Features Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses Insulated package: Electrical = 25 V RMS Capacitance = 45 pf Description The STTH2W4TV1, which uses ST turbo 2, 4 V technology, is especially suited for use in DC/DC and DC/AC converters in secondary stage of MIG/MMA/TIG welding machine. Packaged in ST s ISOTOP, this device offers high power integration for all welding machines and industrial applications. Table 1. K2 Symbol A1 A2 A2 K1 K2 K1 ISOTOP STTH2W4TV1 Device summary A1 Value I F(AV) 2 x 1 A V RRM 4 V T j (max) 15 C V F (typ) 1.5 V t rr (typ) 4 ns October 212 Doc ID 23217 Rev 2 1/8 This is information on a product in full production. www.st.com 8
Characteristics STTH2W4TV1 1 Characteristics Table 2. Absolute ratings (limiting values, at 25 C, unless otherwise specified, per diode) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 4 V I F(RMS) Forward rms current 2 A I F(Peak) Peak forward current, =.2 T c = 9 C Per diode 2 A I FSM Surge non repetitive forward current t p = 1 ms sinusoidal 8 A T stg Storage temperature range -65 to + 15 C T j Maximum operating junction temperature 15 C Table 3. Thermal resistance Symbol Parameter Value (max). Unit R th(j-c) Junction to case Per diode.9 Total.5 C/W R th(c) Coupling.1 C/W When diodes 1 and 2 are used simultaneously: T j (diode 1) = P(diode 1) x R th(j-c) (per diode) + P(diode 2) x R th(c) Table 4. Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit I R (1) Reverse leakage current 4 V R = V RRM T j = 125 C 4 4 µa V F (2) Forward voltage drop 1.55 I F = 1 A T j = 15 C 1.5 1.3 1.9 I F = 2 A T j = 15 C 1.35 1.65 V 1. Pulse test: t p = 5 ms, < 2% 2. Pulse test: t p = 38 µs, < 2% To evaluate the conduction losses use the following equation: P =.95 x I F(AV) +.35 I F 2 (RMS) 2/8 Doc ID 23217 Rev 2
STTH2W4TV1 Characteristics Table 5. Dynamic electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit Reverse recovery Q RR.9 µc charge T j = 125 C I F = 1 A, V R = 32 V S factor Softness factor.3 di F /dt = -2 A/µs Reverse recovery I RM 17 23 A current t rr t fr V FP Reverse recovery time Forward recovery time Forward recovery voltage I F = 1 A, V R = 3 V di F /dt = -1 A/µs I F = 1 A, di F /dt = 1 A/µs V FR = 2 V 4 55 ns 2 µs 3. 4.5 V Figure 1. Conduction losses versus average forward current (per diode) P F(AV) (W) 2 18 16 δ=.5 δ=.1 δ=.2 δ=.5 δ=1 14 12 1 8 6 T 4 2 I F(AV) (A) δ=tp/t tp 2 4 6 8 1 12 14 Figure 2. 1. 1. 1. I FM (A) I 1. T j =15 C (Typical values) Forward voltage drop versus forward current (per diode) T j =15 C (Maximum values) T j =25 C (Maximum values) V FM (V).1..4.8 1.2 1.6 2. 2.4 Figure 3. Relative variation of thermal impedance junction to case versus pulse duration Figure 4. Peak reverse recovery current versus di F /dt (typical values, per diode) Z th (j-c) /R th(j-c) 1..9.8.7.6.5.4.3.2 Single pulse.1 t P (s). 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 4 35 3 25 2 15 1 5 I RM (A ) V R = 32 V Tj = 125 C di F /dt(a/µs) 5 1 15 2 25 3 35 4 45 5 Doc ID 23217 Rev 2 3/8
Characteristics STTH2W4TV1 Figure 5. Reverse recovery time versus di F /dt (typical values, per diode) Figure 6. Reverse recovery charges versus di F /dt (typical values, per diode) 16 14 12 1 8 6 4 t rr (ns) I F =I F(AV) V R= 32 V T j =125 C 2 di /dt(a/µs) F 5 1 15 2 25 3 35 4 45 5 18 16 14 12 1 8 6 4 Q (nc ) rr V R= 32 V T j =125 C 2 di /dt(a/µs) F 5 1 15 2 25 3 35 4 45 5 Figure 7. Reverse recovery softness factor versus di F /dt (typical values, per diode) Figure 8. Relative variations of dynamic parameters versus junction temperature.5.4 S Factor V R= 32 V T j =125 C 2. 1.5 S FACTOR I F =I F(AV) VR=32 V Reference: Tj =125 C.3 1..2.1 di F /dt(a/µs). 5 1 15 2 25 3 35 4 45 5 I RM.5 Q RR Tj( C). 25 5 75 1 125 Figure 9. Transient peak forward voltage versus di F /dt (typical values, per diode) Figure 1. Forward recovery time versus di F /dt (typical values, per diode) 1 V FP (V) 18 t fr (ns) 8 T j = 125 C 16 14 V FR = 2 V T j=125 C 6 12 1 4 8 6 2 di F /dt(a/µs) 5 1 15 2 25 3 35 4 45 5 4 2 di F /dt(a/µs) 5 1 15 2 25 3 35 4 45 5 4/8 Doc ID 23217 Rev 2
STTH2W4TV1 Characteristics Figure 11. Junction capacitance versus reverse voltage applied (typical values, per diode) 1 C(pF) F=1 MHz V OSC =3 mv RMS T j =25 C 1 V R (V) 1 1 1 1 Doc ID 23217 Rev 2 5/8
Package information STTH2W4TV1 2 Package information Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value: 1.5 N m Maximum torque value: 1.5 N m STMicroelectronics strongly recommend the uses of the screws delivered with this product.the use of another screw is entirely at the user s own risk and will invalidate the warranty. In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 6. ISOTOP dimensions Ref. Millimeters Dimensions Inches E G2 C Min. Max. Min. Max. A 11.8 12.2.465.48 A1 8.9 9.1.35.358 A A1 F1 E2 F C2 B 7.8 8.2.37.323 C.75.85.3.33 C2 1.95 2.5.77.81 D 37.8 38.2 1.488 1.54 D1 31.5 31.7 1.24 1.248 P1 E 25.15 25.5.99 1.4 E1 23.85 24.15.939.951 D S G D1 E2 24.8 typ..976 typ. B G 14.9 15.1.587.594 G1 12.6 12.8.496.54 G2 3.5 4.3.138.169 G1 E1 ØP F 4.1 4.3.161.169 F1 4.6 5..181.197 P 4. 4.3.157.69 P1 4. 4.4.157.173 S 3.1 3.3 1.185 1.193 6/8 Doc ID 23217 Rev 2
STTH2W4TV1 Ordering information 3 Ordering information Table 7. Ordering information Order code Marking Package Weight Base qty (1) Delivery mode STTH2W4TV1 STTH2W4TV1 ISOTOP 27 g without screws 1 with screws Tube 1. This product is supplied with 4 terminal screws and washers for each tube. The screws and washers are supplied in a separate pack with the order. 4 Revision history Table 8. Document revision history Date Revision Changes 19-Jun-212 1 First issue. 2-Oct-212 2 Updated Table 1 and Table 5 Doc ID 23217 Rev 2 7/8
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