DC-6GHz Reflective SPDT. GaAs Monolithic Microwave IC in SMD leadless package
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- Asher Gilmore
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1 Description GaAs Monolithic Microwave IC in SMD leadless package The CHS5104-FAA is a monolithic FET based reflective switch housed in leadless surface mount hermetic metal ceramic 6x6mm² package. It is designed for a wide range of applications, from space and military to commercial communication systems. The circuit is manufactured with a phemt process, 0.25µm gate length. It is supplied in RoHS compliant SMD package. Main Features Broadband performance: DC-6GHz Low insertion loss: Isolation: Input P1dB: 30dBm Main Electrical Characteristics Tamb.= +25 C Vh=0V/VL=-5V Symbol Parameter Min Typ Max Unit Freq Frequency range DC 6 GHz IL On state insertion loss 1.3 db ISOL Off state isolation 30 db RL On state return loss 10 db IP1dB Input gain compression 30 dbm Ref. : DSCHS5104-FAA Feb 18 1/16 Specifications subject to change without notice United Monolithic Semiconductors S.A.S.
2 Electrical Characteristics (1) Tamb.= +25 C, specifications are given for 50Ω source and load impedances. Symbol Parameter Condition Min Typ Max Unit Freq Frequency range DC 6 GHz IL On state insertion loss (1) DC - 2GHz DC - 4GHz DC - 6GHz ISOL Off state isolation DC - 2GHz DC - 4GHz DC - 6GHz RL On state input and output return losses DC - 2GHz DC - 4GHz DC - 6GHz VH Control voltage high level VL Control voltage low level -8-5 V IP1dB Input gain Freq. 0.5GHz dbm compression. VL=-5V/VH=0V VL=-8V/VH=0V Ton / Toff Switching time 50% control to 10 ns 90% RF, and 50% control to 10% RF Ic Current consumption on the control supply voltage µa Freq. 0.5GHz Pin 33dBm VH= 0V VL=-5V VL=-8V (1) These values are representative of onboard measurements as defined on the drawing in paragraph "Evaluation mother board". Reference planes of on-board measurements are defined in the paragraph S-parameters reference planes (2) Variation rate of insertion loss with temperature in the range -40 C to +125 C: dB/ C db db db SPDT truth table PAD A PAD B Electrical path RFC to RF1 VH VL ON OFF VL VH OFF ON Electrical path RFC to RF2 Ref. : DSCHS5104-FAA Feb 18 2/16 Specifications subject to change without notice
3 CHS5104-FAA Absolute Maximum Ratings (1) Tamb.= +25 C Symbol Parameter Values Unit VH High level control voltage 0.8 V VL Low level control voltage -10 ma Pin Maximum peak input power overdrive 37 dbm Tj Maximum Junction temperature 175 C (1) Operation of this device above anyone of these parameters may cause permanent damage. Temperature Range Ta Operating temperature range -55 to +125 C Tstg Storage temperature range -55 to +150 C Ref. : DSCHS5104-FAA Feb 18 3/16 Specifications subject to change without notice
4 Device thermal performances All the figures given in this section are obtained assuming that the FAA device is only cooled down by conduction through the package thermal pad (no convection mode considered). The temperature is monitored at the package back-side interface (Tcase). The system maximum temperature must be adjusted in order to guarantee that Tjunction remains below the maximum value specified in the Absolute Maximum Ratings table. So, the system PCB must be designed to comply with this requirement. Parameter RTH (1) Thermal Resistance ( Junction to Case) Biasing conditions VH= 0V/VL=-5V Pdiss= 2.1W Tjunction ( C) RTH ( C/W) T50 ( hours) E+05 (1) Assuming 85 C Tcase Note: when SPDT operates in linear mode Pdiss can be neglected and Tj=Tcase Ref. : DSCHS5104-FAA Feb 18 4/16 Specifications subject to change without notice
5 CHS5104-FAA Typical Package Sij parameters Tamb.= +25 C, A=0V, B=-5V, on-state RFC-RF1 path Freq (GHz) S11 (db) PhS11 ( ) S21 (db) PhS21 ( ) S12 (db) PhS12 ( ) S22 (db) PhS22 ( ) Ref. : DSCHS5104-FAA Feb 18 5/16 Specifications subject to change without notice
6 Typical Package Sij parameters Tamb.= +25 C, A=-5V, B=0V, off-state RFC-RF1 path Freq (GHz) S11 (db) PhS11 ( ) S21 (db) PhS21 ( ) S12 (db) PhS12 ( ) S22 (db) PhS22 ( ) Ref. : DSCHS5104-FAA Feb 18 6/16 Specifications subject to change without notice
7 CHS5104-FAA Typical Board Measurements Tamb.= +25 C, VH=0V / VL=-5V ON state RFC-RF1 path : S21 versus Frequency (A=0V, B=-5V) ON state RFC-RF1 path : S11 and S22 versus Frequency (A=0V, B=-5V) Ref. : DSCHS5104-FAA Feb 18 7/16 Specifications subject to change without notice
8 Typical Board Measurements Tamb.= +25 C, VH=0V / VL=-5V OFF state RFC-RF1 path : S21 versus Frequency (A=-5V, B=0V) Ref. : DSCHS5104-FAA Feb 18 8/16 Specifications subject to change without notice
9 CHS5104-FAA Typical Board Measurements Tamb.= +25 C, VH=0V / VL=-5V Note: board losses are corrected Insertion Loss RFC-RF1 path versus input power (A=0V/B=-5V) Input power at 1dB Insertion Loss compression (RFC-RF1 path) versus frequency (A=0V/B=-5V) Ref. : DSCHS5104-FAA Feb 18 9/16 Specifications subject to change without notice
10 Typical Board Measurements Tamb.= +25 C, VH=0V / VL=-8V Note: board losses are corrected Insertion Loss RFC-RF1 path versus input power (A=0V/B=-8V) Ref. : DSCHS5104-FAA Feb 18 10/16 Specifications subject to change without notice
11 CHS5104-FAA Package outline Units : mm 1- GND (2) 8- RF1 15- GND (2) 21- GND 2- NC 9- GND (2) 16- NC 3- RFC 10- A 17- GND (2) 4- NC 11- GND (2) 18- NC 5- GND (2) 12- NC 19- RFC 6- NC 13- GND 20- NC 7- GND (2) 14- RF1 (1) The package outline drawing included to this data-sheet is given for indication. Refer to the application note AN0024 ( for exact package dimensions. (2) It is strongly recommended to ground all pins marked GND through the PCB board. Ensure that the PCB board is designed to provide the best possible ground to the package. Ref. : DSCHS5104-FAA Feb 18 11/16 Specifications subject to change without notice
12 Definition of the Sij reference planes The reference planes used for Sij measurements given above are symmetrical from the symmetrical axis of the package (see drawing beside). The input and outputs reference planes are located at 3.39mm offset (input wise or output wise respectively) from these axis. Then, the given Sij parameters incorporate the land pattern of the evaluation motherboard recommended in paragraph "Evaluation mother board". Package Information Parameter Package body material Lead finish Hermetic sealing (fine leak compliant Mil-Std-883 Method Condition A4, tracer gas He at 1atm) Value RoHS-compliant Gold 1x10-8 cche/s/atm Ref. : DSCHS5104-FAA Feb 18 12/16 Specifications subject to change without notice
13 CHS5104-FAA Evaluation board description Compatible with the proposed footprint. Based on typically Ro4003 / 8mils or equivalent. Using a micro-strip to coplanar transition to access the package. Recommended for the implementation of this product on a module board. Recommendation on decoupling Label Type Decoupling Comment A, B Control Not required SPDT switch pad control voltage RFC, RF1, RF2 RF access External DC block must be used to ensure DC decoupling The MMIC is DC coupled Ref. : DSCHS5104-FAA Feb 18 13/16 Specifications subject to change without notice
14 DC Schematic Ref. : DSCHS5104-FAA Feb 18 14/16 Specifications subject to change without notice
15 CHS5104-FAA Notes Ref. : DSCHS5104-FAA Feb 18 15/16 Specifications subject to change without notice
16 Recommended package footprint for FAA Package Refer to the application note AN0024 available at for package foot print recommendations and exact package dimensions. SMD mounting procedure for FAA Package For the mounting process standard techniques involving solder paste and a suitable reflow process can be used. For further details, see application note AN0024 available at Recommended environmental management UMS products are compliant with the regulation in particular with the directives RoHS N 2011/65 and REACh N 1907/2006. More environmental data are available in the application note AN0019 also available at Recommended ESD management Refer to the application note AN0020 available at for ESD sensitivity and handling recommendations for the UMS package products. Ordering Information FAA package: CHS5104-FAA/XY Waffle pack: XY = 24 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHS5104-FAA Feb 18 16/16 Specifications subject to change without notice
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CHA93 RoHS COMPLIANT -3GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description Vd The CHA93 is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard
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CHA98b RoHS COMPLIANT -4GHz High Gain Buffer Amplifier GaAs Monolithic Microwave IC Description Vd1 Vd2,3 The CHA98b is a high gain broadband threestage monolithic buffer amplifier. It is designed for
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RoHS COMPLIANT 3-GHz Low Noise Amplifier Self biased GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 3GHz to GHz
More informationFeatures = +5V. = +25 C, Vdd 1. = Vdd 2
v7.11 HMC1LC3 POWER AMPLIFIER, - GHz Typical Applications The HMC1LC3 is ideal for use as a medium power amplifier for: Microwave Radio & VSAT Military & Space Test Equipment & Sensors Fiber Optics LO
More informationFeatures. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units
Typical Applications The is ideal for: Basestation Infrastructure Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar, & ECM Test Instrumentation Functional Diagram Features
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(db) RoHS COMPLIANT GaAs Monolithic Microwave IC Description LO The is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide
More informationHigh Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz HMC349AMS8G
Data Sheet High Isolation, Nonreflective, GaAs, SPDT Switch,1 MHz to 4 GHz FEATURES Nonreflective, 5 Ω design High isolation: 57 db to 2 GHz Low insertion loss:.9 db to 2 GHz High input linearity 1 db
More informationFeatures. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*
v.4 HMC498LC4 Typical Applications Features The HMC498LC4 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use
More information10 W, Failsafe, GaAs, SPDT Switch 0.2 GHz to 2.7 GHz HMC546LP2E
FEATURES High input P.dB: 4 dbm Tx Low insertion loss:.4 db High input IP3: 67 dbm Positive control: V low control; 3 V to 8 V high control Failsafe operation: Tx is on when no dc power is applied APPLICATIONS
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RoHS COMPLIANT 21-26.5GHz Integrated Down GaAs Monolithic Microwave IC Description LO The CHR3693-99F is a multifunction chip, which integrates a balanced cold FET mixer, a time two multiplier, and a RF
More information5.5 GHz to 14 GHz, GaAs MMIC Fundamental Mixer HMC558A. Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM APPLICATIONS GENERAL DESCRIPTION
FEATURES Conversion loss: 7.5 db typical at 5.5 GHz to 1 GHz Local oscillator (LO) to radio frequency (RF) isolation: 45 db typical at 5.5 GHz to 1 GHz LO to intermediate frequency (IF) isolation: 45 db
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RoHS COMPLIANT -40GHz Frequency Multiplier GaAs Monolithic Microwave IC Description The CHX2092a is a cascadable by 4 frequency multiplier monolithic circuit. It is designed for a wide range of applications,
More information10 GHz to 20 GHz, GaAs, MMIC, Double Balanced Mixer HMC554ALC3B
Data Sheet FEATURES Conversion loss: 8. db LO to RF Isolation: 37 db Input IP3: 2 dbm RoHS compliant, 2.9 mm 2.9 mm, 12-terminal LCC package APPLICATIONS Microwave and very small aperture terminal (VSAT)
More information6 GHz to 26 GHz, GaAs MMIC Fundamental Mixer HMC773ALC3B
FEATURES Conversion loss: 9 db typical Local oscillator (LO) to radio frequency (RF) isolation: 37 db typical LO to intermediate frequency (IF) isolation: 37 db typical RF to IF isolation: db typical Input
More information4 GHz to 8.5 GHz, GaAs, MMIC, I/Q Mixer HMC525ALC4
Data Sheet FEATURES Passive: no dc bias required Conversion loss: 8 db (typical) Input IP3: 2 dbm (typical) LO to RF isolation: 47 db (typical) IF frequency range: dc to 3. GHz RoHS compliant, 24-terminal,
More informationAdvance Information: AI1016. QFN Packaged 10-16GHz Direct Modulator. GaAs Monolithic Microwave IC GND QB Q VG I VD3 VD2 VD1
VD1 VD2 VD3 QB Q VG I IB Advance Information: AI1016 QFN Packaged 10-16GHz Direct Modulator GaAs Monolithic Microwave IC 32 31 30 29 28 27 26 25 1 24 2 23 3 22 RF IN 4 21 5 20 6 19 LO IN 7 18 8 17 9 10
More informationFeatures. = +25 C, Vdd = +4V, Idd = 90 ma [2]
v.91 HMCLCB AMPLIFIER, 1-27 GHz Typical Applications This HMCLCB is ideal for: Features Noise Figure: 2.2 db @ 2 GHz Point-to-Point Radios Point-to-Multi-Point Radios Military & Space Test Instrumentation
More informationFeatures. = +25 C, With 0/-5V Control, 50 Ohm System. Parameter Frequency Min. Typ. Max. Units
Typical Applications Features The HMC232ALP4E is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military Radios, Radar & ECM Test Instrumentation Functional Diagram Isolation: 57 @ 3 GHz 50 @
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v1.716 DIGITAL ATTENUATOR, DC - 1GHz Typical Applications The is ideal for: Cellular/3G Infrastructure WiBro / WiMAX / 4G Microwave Radio & VSAT Test Equipment and Sensors IF & RF Applications Functional
More informationFeatures. Parameter Frequency (GHz) Min. Typ. Max. Units GHz GHz GHz. Attenuation Range GHz 15.
v.6.5 LSB GaAs MMIC 5-BIT DIGITAL ATTENUATOR,. - 33 GHz Typical Applications Features The is ideal for: Fiber Optics & Broadband Telecom Microwave Radio & VSAT Military Radios, Radar & ECM Space Applications
More information0.1 GHz to 18 GHz, GaAs SP4T Switch HMC641A
Data Sheet 0. GHz to 8 GHz, GaAs SP4T Switch FEATURES Broadband frequency range: 0. GHz to 8 GHz Nonreflective 50 Ω design Low insertion loss: 2. db to 2 GHz High isolation: 42 db to 2 GHz High input linearity
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X-band High Power Amplifier GaAs Monolithic Microwave IC CHA7215 RoHS COMPLIANT Description The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides
More informationGaAs, MMIC Fundamental Mixer, 2.5 GHz to 7.0 GHz HMC557A
FEATURES Conversion loss: db LO to RF isolation: db LO to IF isolation: 3 db Input third-order intercept (IP3): 1 dbm Input second-order intercept (IP2): dbm LO port return loss: dbm RF port return loss:
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