DUAL OP AMP AND VOLTAGE REFERENCE General Description. Features

Transcription

1 General Description The is a monolithic IC specifically designed to regulate the output current and voltage levels of switching battery chargers and power supplies. The device contains two Op Amps and a 2.5V precision shunt voltage reference. Op Amp 1 is designed for voltage control with its non-inverting input internally connects to the output of the shunt regulator. Op Amp 2 is for current control with both inputs uncommitted. The IC offers the power converter designer a control solution that features increased precision with a corresponding reduction in system complexity and cost. The is available in standard packages of DIP- 8 and SOIC-8. Features Op Amp Input Offset Voltage: 0.5mV Supply Current: 75µA per Op Amp at 5.0V Supply Voltage Unity Gain Bandwidth: 1MHz Output Voltage Swing: 0 to (V CC -1.5) V Power Supply Range: 3 to 36V Voltage Reference Fixed Output Voltage Reference: 2.5V Voltage Tolerance: ± 0.4%, ± 1% Sink Current Capability: 0.05 to 80mA Typical Output Impedance: 0.2Ω Applications Battery Charger Switching Power Supply SOIC-8 DIP-8 Figure 1. Package Types of 1

2 Pin Configuration M Package/P Package (SOIC-8/DIP-8) OUTPUT V CC INPUT OUTPUT 2 INPUT 1+ / V KA 3 6 INPUT 2- GND 4 5 INPUT 2+ Top View Figure 2. Pin Configuration of Functional Block Diagram OUTPUT 1 1 Op Amp 1 8 V CC INPUT OUTPUT 2 INPUT 1+ / V KA Op Amp 2 6 INPUT 2- GND 4 5 INPUT 2+ Figure 3. Functional Block Diagram of 2

3 Ordering Information - Circuit Type Voltage Tolerance A: ± 0.4% Blank: ± 1% E1: Lead Free Blank: Tin Lead TR: Tape and Reel Blank: Tube Package M: SOIC-8 P: DIP-8 Package Reference Voltage DIP-8 2.5V SOIC-8 2.5V Voltage Tolerance ± 0.4% Temperature Range Part Number Marking ID Packing Type Tin Lead Lead Free Tin Lead Lead Free AP AP-E1 AP AP-E1 ± 1% -40 to105 o C P P-E1 P P-E1 ± 0.4% -40 to105 o C ± 1% -40 to105 o C Tube AM AM-E1 4310AM AM-E1 Tube AMTR AMTR-E1 4310AM AM-E1 Tape & Reel M M-E1 4310M M-E1 Tube MTR MTR-E1 4310M M-E1 Tape & Reel BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant. 3

4 Absolute Maximum Ratings (Note 1) Parameter Symbol Value Unit Power Supply Voltage (V CC to GND) V CC 40 V Op Amp 1 and 2 Input Voltage Range (Pins 2, 5, 6) V IN -0.3 to V CC +0.3 V Op Amp 2 Input Differential Voltage (Pins 5, 6) V ID 40 V Voltage Reference Cathode Current (Pin 3) I K 100 ma Power Dissipation (T A =25 o C) P D DIP SOIC mw Operating Junction Temperature T J 150 o C Storage Temperature Range T STG -65 to 150 o C Lead Temperature (Soldering 10s) T LEAD 260 o C Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability. Recommended Operating Conditions Parameter Min Max Unit Supply Voltage 3 36 V Ambient Temperature o C 4

5 Electrical Characteristics Operating Conditions: V CC =+5V, T A =25 o C unless otherwise specified. Parameter Conditions Min Typ Max Unit Total Supply Current, excluding Current in Voltage Reference Voltage Reference Section V CC =5V, no load, -40 o C T A 105 o C V CC =30V, no load, -40 o C T A 105 o C ma Reference Voltage A I K =10mA T A =25 o C o C T A 105 o C V T A =25 o C o C T A 105 o C V Reference Voltage Deviation Over Full Temperature Range Minimum Cathode Current for Regulation I K =10mA, T A =-40 to 105 o C 5 24 mv ma Dynamic Impedance I K =1.0 to 80mA, f<1khz Ω Op Amp 1 Section (V CC =5V, V O =1.4V, T A =25 o C, unless otherwise noted) Input Offset Voltage T A =25 o C T A =-40 to 105 o C 5 mv Input Offset Voltage Temperature Drift Input Bias Current (Inverting Input Only) T A =-40 to 105 o C 7 µv/ o C T A =25 o C na Large Signal Voltage Gain V CC =15V, R L =2kΩ, V O =1.4 to 11.4V db Power Supply Rejection Ratio V CC =5 to 30V db Output Current Source V CC =15V, V ID =1V, V O =2V ma Sink V CC =15V, V ID =-1V, V O =2V 7 20 ma Output Voltage Swing (High) V CC =30V, R L =10kΩ, V ID =1V V Output Voltage Swing (Low) V CC =30V, R L =10kΩ, V ID =-1V mv Slew Rate V CC =18V, R L =2kΩ, A V =1, V IN =0.5 to 2V, C L =100pF V/µ s Unity Gain Bandwidth V CC =30V, R L =2kΩ, C L =100pF MHz 5

6 Electrical Characteristics (Continued) Operating Conditions: V CC =+5V, T A =25 o C unless otherwise specified. Parameter Conditions Min Typ Max Unit Op Amp 2 Section (V CC =5V, V O =1.4V, T A =25 o C, unless otherwise noted) Input Offset Voltage T A =25 o C T A =-40 to 105 o C 5 mv Input Offset Voltage Temperature Drift T A =-40 to 105 o C 7 µv/ o C Input Offset Current T A =25 o C 2 30 na Input Bias Current T A =25 o C na Input Voltage Range V CC =0 to 36V 0 V CC -1.5 V Common Mode Rejection Ratio T A =25 o C, V CM =0 to 3.5V db Large Signal Voltage Gain V CC =15V, R L =2kΩ, V O =1.4 to 11.4V db Power Supply Rejection Ratio V CC =5 to 30V dβ Output Current Source V CC =15V, V ID =1V, V O =2V ma Sink V CC =15V, V ID =-1V, V O =2V 7 20 ma Output Voltage Swing (High) V CC =30V, R L =10kΩ, V ID =1V V Output Voltage Swing (Low) V CC =30V, R L =10kΩ, V ID =-1V mv Slew Rate V CC =18V, R L =2kΩ, A V =1, V IN =0.5 to 2V, C L =100pF V/µ s Unity Gain Bandwidth V CC =30V, R L =2kΩ, C L =100pF MHz 6

7 Typical Performance Characteristics Reference Voltage (V) Cathode Current (ma) V KA =V REF T A =25 0 C Ambient Temperature ( o C) Cathode Voltage (V) Figure 4. Reference Voltage vs. Ambient Temperature Figure 5. Cathode Current vs. Cathode Voltage Input Bias Current (na) Voltage Gain(dB) R L =2KΩ R L =20KΩ Ambient Temperature ( o C) Supply Voltage (V) Figure 6. Input Bias Current vs. Ambient Temperature Figure 7. Op Amp Voltage Gain 7

8 Typical Application R1 Opto Isolator R6 - AC Line SMPS Op Amp 2 + R7 Battery Pack R3 R4 R5 Current Sense R2 - Op Amp 1 + R8 Figure 8. Application of in a Constant Current and Constant Voltage Charger 8

9 Mechanical Dimensions: DIP-8 Unit: mm(inch) 0.700(0.028) (0.060) TYP (0.300)TYP (0.146) 4.310(0.170) (0.126) 3.600(0.142) (0.118) 3.600(0.142) 0.510(0.020)MIN 0.254(0.010)TYP 0.360(0.014) 0.560(0.022) 0.130(0.005)MIN 2.540(0.100) TYP 8.200(0.323) 9.400(0.370) 0.204(0.008) 0.360(0.014) R0.750(0.030) 6.200(0.244) 6.600(0.260) Φ3.000(0.118) Depth 0.100(0.004) 0.200(0.008) 9.000(0.354) 9.400(0.370) 9

10 Mechanical Dimensions (Continued): SOIC-8 Unit: mm(inch) (0.189) 5.000(0.197) 1.350(0.053) 1.750(0.069) 0.320(0.013) (0.039) (0.050) TYP 0.100(0.004) 0.300(0.012) R0.150(0.006) 0.675(0.027) 0.725(0.029) D 0 8 D 20: (0.228) 6.200(0.244) φ 0.800(0.031) 0.200(0.008) 3.800(0.150) 4.000(0.157) 0.330(0.013) 0.510(0.020) 0.900(0.035) 1 5 R0.150(0.006) 0.190(0.007) 0.250(0.010) 10

11 IMPORTANT NOTICE reserves the right to make changes without further notice to any products or specifications herein. does not assume any responsibility for use of any its products for any particular purpose, nor does assume any liability arising out of the application or use of any its products or circuits. does not convey any license under its patent rights or other rights nor the rights of others. MAIN SITE - Wafer Fab Shanghai SIM- 800, Yi Shan Road, Shanghai , China Tel: , Fax: IC Design Group Advanced Analog Circuits (Shanghai) Corporation 8F, Zone B, 900, Yi Shan Road, Shanghai , China Tel: , Fax: REGIONAL SALES OFFICE Shenzhen Office Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office 27B, Tower C, 2070, Middle Shen Nan Road, Shenzhen , China Tel: , Fax: Taiwan Office BCD Semiconductor (Taiwan) Company Limited 4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei, Taiwan Tel: , Fax: USA Office BCD Semiconductor Corporation 3170 De La Cruz Blvd., Suite 105, Santa Clara, CA , U.S.A Tel: , Fax:

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