Data Sheet December Features. Packaging. Symbol
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1 HGTGN1BND Data Sheet December 1 3A, 1V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTGN1BND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low onstate conduction loss of a bipolar transistor. The IGBT used is the development type TA499. The Diode used is the development type TA The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Features 3A, 1V, T C = o C 1V Switching SOA Capability Typical Fall Time ns at T J = 1 o C Short Circuit Rating Low Conduction Loss Packaging JEDEC STYLE TO-47 E C G Formerly Developmental Type TA493. Ordering Information PART NUMBER PACKAGE BRAND HGTGN1BND TO-47 N1BND NOTE: When ordering, use the entire part number. Symbol C G E FAIRCHILD SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,73 4,417,38 4,43,79 4,443,931 4,466,176 4,16,143 4,3,34 4,87,713 4,98,461 4,6,948 4,6,11 4,631,64 4,639,74 4,639,76 4,641,16 4,644,637 4,68,19 4,684,413 4,694,313 4,717,679 4,743,9 4,783,69 4,794,43 4,81,986 4,83,33 4,89,4 4,89,47 4,8,66 4,83,176 4,837,66 4,86,8 4,883,767 4,888,67 4,89,143 4,91,17 4,94,69 4,933,74 4,963,91 4,969,7 1 Fairchild Semiconductor Corporation HGTGN1BND Rev. B
2 HGTGN1BND Absolute Maximum Ratings T C = o C, Unless Otherwise Specified HGTGN1BND Collector to Emitter Voltage BV CES 1 V Collector Current Continuous At T C = o C I C 3 A At T C = 1 o C I C1 17 A Collector Current Pulsed (Note 1) I CM 8 A Gate to Emitter Voltage Continuous V GES ± V Gate to Emitter Voltage Pulsed V GEM ±3 V Switching Safe Operating Area at T J = 1 o C (Figure ) SSOA A at 1V Power Dissipation Total at T C = o C P D 98 W Power Dissipation Derating T C > o C W/ o C Operating and Storage Junction Temperature Range T J, T STG - to 1 o C Maximum Lead Temperature for Soldering T L 6 o C Short Circuit Withstand Time (Note ) at V GE = 1V t SC 8 µs Short Circuit Withstand Time (Note ) at V GE = 1V t SC 1 µs CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature.. V CE(PK) = 84V, T J = 1 o C, R G = Ω. UNITS Electrical Specifications T C = o C, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BV CES I C = µa, V GE = V V Collector to Emitter Leakage Current I CES V CE = 1V T C = o C - - µa T C = 1 o C µa T C = 1 o C - -. ma Collector to Emitter Saturation Voltage V CE(SAT) I C = A, V GE = 1V T C = o C V T C = 1 o C V Gate to Emitter Threshold Voltage V GE(TH) I C = 9µA, V CE = V GE V Gate to Emitter Leakage Current I GES V GE = ±V - - ± na Switching SOA SSOA T J = 1 o C, R G = Ω, V GE = 1V, L = 4µH, V CE(PK) = 1V - - A Gate to Emitter Plateau Voltage V GEP I C = A, V CE = 6V V On-State Gate Charge Q G(ON) I C = A, V CE = 6V V GE = 1V - 1 nc V GE = V nc Current Turn-On Delay Time t d(on)i IGBT and Diode at T J = o C ns Current Rise Time t ri I CE = A V CE = 96V ns Current Turn-Off Delay Time t d(off)i V GE = 1V - 16 ns Current Fall Time t fi R G = Ω L = mh - 14 ns Turn-On Energy E ON Test Circuit (Figure ) mj Turn-Off Energy (Note 3) E OFF mj 1 Fairchild Semiconductor Corporation HGTGN1BND Rev. B
3 HGTGN1BND Electrical Specifications T C = o C, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Current Turn-On Delay Time t d(on)i IGBT and Diode at T J = 1 o C - 1 ns Current Rise Time t ri I CE = A V CE = 96V ns Current Turn-Off Delay Time t V GE = 1V d(off)i - 19 ns R G = Ω Current Fall Time t fi L = mh - 14 ns Turn-On Energy E ON Test Circuit (Figure ) mj Turn-Off Energy (Note 3) E OFF mj Diode Forward Voltage V EC I EC = A V Diode Reverse Recovery Time t rr I EC = A, di EC /dt = A/µs ns I EC = 1A, di EC /dt = A/µs ns Thermal Resistance Junction To Case R θjc IGBT o C/W Diode o C/W NOTE: 3. Turn-Off Energy Loss (E OFF ) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (I CE = A). All devices were tested per JEDEC Standard No. 4-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Typical Performance Curves Unless Otherwise Specified I CE, DC COLLECTOR CURRENT (A) 3 V GE = 1V T J = 1 o C, R G = Ω, V G = 1V, L = 4µH T C, CASE TEMPERATURE ( o C) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE FIGURE. MINIMUM SWITCHING SAFE OPERATING AREA 1 Fairchild Semiconductor Corporation HGTGN1BND Rev. B
4 HGTGN1BND Typical Performance Curves Unless Otherwise Specified (Continued) f MAX, OPERATING FREQUENCY (khz) T J = 1 o C, R G = Ω, L = mh, V CE = 96V T C = 7 o C, V GE = 1V, IDEAL DIODE f MAX1 =. / (t d(off)i + t d(on)i ) f MAX = (P D - P C ) / (E ON + E OFF ) T C V GE P C = CONDUCTION DISSIPATION 7 o C 1V (DUTY FACTOR = %) 7 o C 1V R ØJC =.4 o C/W, SEE NOTES 1 o C 1V 1 o C 1V 1 t SC, SHORT CIRCUIT WITHSTAND TIME (µs) 1 V CE = 84V, R G = Ω, T J = 1 o C t SC V GE, GATE TO EMITTER VOLTAGE (V) I SC 1 I SC, PEAK SHORT CIRCUIT CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO FIGURE 4. SHORT CIRCUIT WITHSTAND TIME 4 3 DUTY CYCLE <.%, V GE = 1V PULSE DURATION = µs T C = - o C T C = o C T C = 1 o C T C = - o C T C = o C T C = 1 o C DUTY CYCLE <.%, V GE = 1V PULSE DURATION = µs FIGURE. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE E ON, TURN-ON ENERGY LOSS (mj) R G = Ω, L = mh, V CE = 96V T J = 1 o C, V GE = 1V, V GE = 1V T J = o C, V GE = 1V, V GE = 1V 1 E OFF, TURN-OFF ENERGY LOSS (mj) R G = Ω, L = mh, V CE = 96V T J = 1 o C, V GE = 1V OR 1V T J = o C, V GE = 1V OR 1V 1 FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO 1 Fairchild Semiconductor Corporation HGTGN1BND Rev. B
5 HGTGN1BND Typical Performance Curves Unless Otherwise Specified (Continued) t di, TURN-ON DELAY TIME (ns) R G = Ω, L = mh, V CE = 96V T J = o C, T J = 1 o C, V GE = 1V T J = o C, T J = 1 o C, V GE = 1V 1 t ri, RISE TIME (ns) R G = Ω, L = mh, V CE = 96V 4 T J = o C, T J = 1 o C, V GE = 1V 3 T J = o C OR T J = 1 o C, V GE = 1V 1 FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO FIGURE. TURN-ON RISE TIME vs COLLECTOR TO t d(off)i, TURN-OFF DELAY TIME (ns) R G = Ω, L = mh, V CE = 96V V GE = 1V, V GE = 1V, T J = 1 o C V GE = 1V, V GE = 1V, T J = o C 1 t fi, FALL TIME (ns) 3 1 R G = Ω, L = mh, V CE = 96V T J = 1 o C, V GE = 1V OR 1V T J = o C, V GE = 1V OR 1V 1 FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO FIGURE 1. FALL TIME vs COLLECTOR TO EMITTER CURRENT DUTY CYCLE <.%, V CE = V PULSE DURATION = µs T C = 1 o C T C = o C T C = - o C V GE, GATE TO EMITTER VOLTAGE (V) 14 1 V GE, GATE TO EMITTER VOLTAGE (V) I G (REF) = 1mA, R L = 6Ω, T C = o C 1 V CE = 1V V CE = 8V V CE = 4V Q G, GATE CHARGE (nc) 1 FIGURE 13. TRANSFER CHARACTERISTIC FIGURE 14. GATE CHARGE WAVEFORMS 1 Fairchild Semiconductor Corporation HGTGN1BND Rev. B
6 HGTGN1BND Typical Performance Curves Unless Otherwise Specified (Continued) C, CAPACITANCE (nf) 4 FREQUENCY = 1MHz 3 C IES 1 C RES C OES DUTY CYCLE <.%, T C = 1 o C PULSE DURATION = µs 1 V GE = 1V V GE = V 3 4 FIGURE 1. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE Z θjc, NORMALIZED THERMAL RESPONSE t 1.1 DUTY FACTOR, D = t 1 / t P D PEAK T J = (P D X Z θjc X R θjc ) + T C SINGLE PULSE t t 1, RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE I F, FORWARD CURRENT (A) 1 o C o C t, RECOVERY TIMES (ns) T C = o C, di EC / dt = A/µs t rr t a - o C V F, FORWARD VOLTAGE (V) 1 t b I F, FORWARD CURRENT (A) FIGURE 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT 1 Fairchild Semiconductor Corporation HGTGN1BND Rev. B
7 HGTGN1BND Test Circuit and Waveforms HGTGN1BND 9% V GE % E ON E OFF L = mh V CE R G = Ω + - V DD = 96V I CE 9% % t d(off)i t fi tri t d(on)i FIGURE. INDUCTIVE SWITCHING TEST CIRCUIT Handling Precautions for IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as ECCOSORBD LD6 or equivalent.. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on.. Gate Voltage Rating - Never exceed the gate-voltage rating of V GEM. Exceeding the rated V GE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. FIGURE 1. SWITCHING TEST WAVEFORMS Operating Frequency Information Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (I CE ) plots are possible using the information shown for a typical unit in Figures, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows f MAX1 or f MAX ; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. f MAX1 is defined by f MAX1 =./(t d(off)i + t d(on)i ). Deadtime (the denominator) has been arbitrarily held to % of the on-state time for a % duty factor. Other definitions are possible. t d(off)i and t d(on)i are defined in Figure 1. Device turn-off delay can establish an additional frequency limiting condition for an application other than T JM. t d(off)i is important when controlling output ripple under a lightly loaded condition. f MAX is defined by f MAX = (P D - P C )/(E OFF + E ON ). The allowable dissipation (P D ) is defined by P D = (T JM - T C )/R θjc. The sum of device switching and conduction losses must not exceed P D. A % duty factor was used (Figure 3) and the conduction losses (P C ) are approximated by P C = (V CE x I CE )/. E ON and E OFF are defined in the switching waveforms shown in Figure 1. E ON is the integral of the instantaneous power loss (I CE x V CE ) during turn-on and E OFF is the integral of the instantaneous power loss (I CE x V CE ) during turn-off. All tail losses are included in the calculation for E OFF ; i.e., the collector current equals zero (I CE = ). 1 Fairchild Semiconductor Corporation HGTGN1BND Rev. B
8 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E CMOS TM EnSigna TM FACT FACT Quiet Series STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms FAST FASTr FRFET GlobalOptoisolator GTO HiSeC ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC OPTOPLANAR PACMAN POP Power47 PowerTrench QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER SMART START STAR*POWER Stealth SuperSOT -3 SuperSOT -6 SuperSOT -8 SyncFET TinyLogic TruTranslation UHC UltraFET. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Product Status Definition VCX Advance Information Preliminary No Identification Needed Formative or In Design First Production Full Production This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4
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