to 5GHz Revision: Rev

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1 BGB741L7ESD BGB741L7ESD as Low Noise Amplifier for Applications in 3MHz to 5GHz Application Note AN27 Revision: Rev. 1. RF and Protection Devices

2 Edition Published by Infineon Technologies AG Munich, Germany 212 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

3 BGB741L7ESD BGB741L7ESD for 3MHz to 5GHz Applications Application Note AN27 Revision History: Previous Revision: Page Subjects (major changes since last revision) Trademarks of Infineon Technologies AG A-GOLD, BlueMoon, COMNEON, CONVERGATE, COSIC, C166, CROSSAVE, CanPAK, CIPOS, CoolMOS, CoolSET, CONVERPATH, CORECONTROL, DAVE, DUALFALC, DUSLIC, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, E-GOLD, EiceDRIVER, EUPEC, ELIC, EPIC, FALC, FCOS, FLEXISLIC, GEMINAX, GOLDMOS, HITFET, HybridPACK, INCA, ISAC, ISOFACE, IsoPACK, IWORX, M-GOLD, MIPAQ, ModSTACK, MUSLIC, my-d, NovalithIC, OCTALFALC, OCTAT, OmniTune, OmniVia, OptiMOS, OPTIVERSE, ORIGA, PROFET, PRO-SIL, PrimePACK, QUADFALC, RASIC, ReverSave, SatRIC, SCEPTRE, SCOUT, S-GOLD, SensoNor, SEROCCO, SICOFI, SIEGET, SINDRION, SLIC, SMARTi, SmartLEWIS, SMINT, SOCRATES, TEMPFET, thinq!, TrueNTRY, TriCore, TRENCHSTOP, VINAX, VINETIC, VIONTIC, WildPass, X-GOLD, XMM, X-PMU, XPOSYS, XWAY. Other Trademarks AMBA, ARM, MULTI-ICE, PRIMECELL, REALVIEW, THUMB of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. Mifare of NXP. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO. OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Sattelite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update Application Note AN27, Rev / 28

4 BGB741L7ESD: Broadband MMIC LNA for application from 3MHz to 5GHz Table of Content 1 BGB741L7ESD: Broadband MMIC LNA for application from 3MHz to 5GHz Application Information Summary of Measurement Results BGB741L7ESD Application Schematic Measured Graphs for Measured Graphs for 3.V Measured Graphs for 4.V Evaluation Board and layout Information List of Figures Figure 1 Block Diagram of the BGB741L7ESD Figure 2 Application diagram of th BGB741L7ESD for 3 MHz to 5GHz applications Figure 3 Schematics of the BGB741L7ESD for 3 MHz to 5GHz applications Figure 4 Characteristics current/voltage in function of the resistor Rext for the BGB741L7ESD biasing Figure 5 Insertion power gain of the BGB741L7ESD from 3MHz to 5GHz applications at Figure 6 Noise figure of the BGB741L7ESD from 3MHz to 5GHz applications at Figure 7 Input matching of the BGB741L7ESD from 3MHz to 5GHz applications at Figure 8 Output matching of the BGB741L7ESD from 3MHz to 5GHz applications at Figure 9 Reverse isolation of the BGB741L7ESD from 3MHz to 5GHz applications at Figure 1 Input 1dB compression point of the BGB741L7ESD from 3MHz to 5GHz applications at Figure 11 Input 3 rd interception point of the BGB741L7ESD for 3MHz to 5GHz applications at Figure 12 Stability K-factor of the BGB741L7ESD for 3MHz to 5GHz applications at Figure 13 Insertion power gain of the BGB741L7ESD from 3MHz to 5GHz applications at 3.V Figure 14 Noise figure of the BGB741L7ESD from 3MHz to 5GHz applications at 3.V Figure 15 Input matching of the BGB741L7ESD from 3MHz to 5GHz applications at 3.V Figure 16 Output matching of the BGB741L7ESD from 3MHz to 5GHz applications at 3.V Figure 17 Reverse isolation of the BGB741L7ESD from 3MHz to 5GHz applications at 3.V Figure 18 Input 1dB compression point of the BGB741L7ESD from 3MHz to 5GHz applications at 3.V Figure 19 Input 3 rd intercept point of the BGB741L7ESD for 3MHz to 5GHz applications at 3.V Figure 2 Stability K-factor of the BGB741L7ESD for 3MHz to 5GHz applications at 3.V Figure 21 Insertion power gain of the BGB741L7ESD from 3MHz to 5GHz applications at 4.V Figure 22 Noise figure of the BGB741L7ESD from 3MHz to 5GHz applications at 4.V Figure 23 Input matching of the BGB741L7ESD from 3MHz to 5GHz applications at 4.V Figure 24 Output matching of the BGB741L7ESD from 3MHz to 5GHz applications at 4.V Figure 25 Reverse isolation of the BGB741L7ESD from 3MHz to 5GHz applications at 4.V Figure 26 Input 1dB compression point of the BGB741L7ESD from 3MHz to 5GHz applications at 4.V Figure 27 Input 3 rd intercept point of the BGB741L7ESD from 3MHz to 5GHz applications 4.V Figure 28 Stability K-factor of the BGB741L7ESD for 3MHz to 5GHz applications at 4.V Figure 29 Photo picture of Evaluation Board Figure 3 PCB Layer Information List of Tables Table 1 Pin definition and function... 6 Table 2 Summary of Measurement Results for UHF 3-86MHz... 8 Table 3 Summary of Measurement Results for GPS 1575MHz... 9 Table 4 Summary of Measurement Results for WLAN/WiMax 23MHz to 27MHz... 1 Table 5 Summary of Measurement Results for WiMax 33MHz to 37MHz Table 6 Bill-of-Materials Application Note AN27, Rev / 28

5 BGB741L7ESD: Broadband MMIC LNA for application from 3MHz to 5GHz 1 BGB741L7ESD: Broadband MMIC LNA for application from 3MHz to 5GHz The MMIC LNA BGB741L7ESD from Infineon Technologies is a high performance broadband amplifier for wireless solutions from 3MHz up to 5GHz. Built up with Silicon Germanium (Si:Ge) technology, the BGB741L7ESD offers an excellent noise figure over broad frequency band. The biasing and stabilization circuits built inside the BGB741L7ESD reduce the number of external parts down to 6 and make the BGB741L7ESD interesting for compact and high performance LNA designs. The component can be used from until 4.V and from 5mA to 3mA. Furthermore, this device includes an integrated ESD protection circuit on chip which protects the device upto 4.kV at the input pin and 2.5kV at the output pin (according to Human Body Model). A CMOS-technology compliant power-on/off function is also integrated in the device. For environments more sensitive to ESD discharges, the device can be strengthened by using an additional ESD diode at the RF input of the circuit (ESDP2RFL ESD diodes series from Infineon Technologies for example). The component will be enhanced against stronger ESD aggression potentially caused by non protected devices (like antenna modules). Application Note AN27, Rev / 28

6 BGB741L7ESD: Broadband MMIC LNA for application from 3MHz to 5GHz The first figure presents the block diagram of the BGB741L7ESD. The device is Packaged in TSLP-7-1 format and the pinning information are summarized in the table 1. Figure 1 Block Diagram of the BGB741L7ESD. Table 1 Pin definition and function Pin N Name Function 1 Vcc Voltage supply 2 Vbias Output of biasing circuitry to the transistor base 3 RFin RF input of the BGB741L7ESD LNA 4 RFout RF output of the LNA 5 Vctrl Power off/on mode Function 6 Adj Current adjustment (please see figure 2 and 3) 7 GND Ground of the BGB741L7ESD Application Note AN27, Rev / 28

7 Application Information 2 Application Information This application note presents the performances of the BGB741L7ESD in a broadband mode from 3MHz to 5GHz. Thus, this LNA fits for applications like UHF, ISM bands, GPS, UMTS, WLAN 2.4GHz and WiMax upto 3.8GHz. The following application diagram (please see the figure 2) shows where the BGB741L7ESD can be used on a transmission/reception signal chain. Figure 2 Application diagram of the BGB741L7ESD for 3 MHz to 5GHz applications. This document provides the results for several bands (UHF, GPS, WLAN 2.4G, WiMax) in relation with the current/voltage biasing (Please see the Table 2, 3, 4 and 5 below). Please note that the gains in-band (Table 2, 3, 4 and 5) are referenced to the lowest gain measured in the described frequency band. The related 3 rd order intercept point and -1dB compression point are measured at the frequency point described in the comments. These measurements are measured in-band without out-of-band jammer signalsthe device is unconditionally stable from DC until 1GHz. Application Note AN27, Rev / 28

8 Summary of Measurement Results 3 Summary of Measurement Results Table 2 Summary of Measurement Results for UHF 3-86MHz Parameter Symbol Value Unit Note/Test Condition Frequency Range Freq 3 86MHz MHz DC Voltage Vcc V DC Current Icc ma Gain G db Pin=-3dBm Noise Figure NF db Input Return Loss RLin db Pin=-3dBm Output Return Loss RLout db Pin=-3dBm Reverse Isolation IRev db Pin=-3dBm Input P1dB IP1dB dbm SMA and PCB loss of.1 db included 86MHz Output P1dB OP1dB dbm Input IP3 IIP dbm Output IP3 OIP dbm Stability k >1 -- In-band, f1=859mhz, f2=86mhz, Pin=-3dBm Unconditionally stable from DC to 1GHz Application Note AN27, Rev / 28

9 Summary of Measurement Results Table 3 Summary of Measurement Results for GPS 1575MHz Parameter Symbol Value Unit Note/Test Condition Frequency Range Freq 1575 MHz DC Voltage Vcc V DC Current Icc ma Gain G db Pin=-3dBm Noise Figure NF db Input Return Loss RLin db Pin=-3dBm Output Return Loss RLout db Pin=-3dBm Reverse Isolation IRev db Pin=-3dBm Input P1dB IP1dB dbm SMA and PCB loss of.1 db included 1575MHz Output P1dB OP1dB dbm Input IP3 IIP dbm Output IP3 OIP dbm Stability k >1 -- In-band, f1=1575mhz, f2=1576mhz, Pin=-3dBm Unconditionally stable from DC to 1GHz Application Note AN27, Rev / 28

10 Summary of Measurement Results Table 4 Summary of Measurement Results for WLAN/WiMax 23MHz to 27MHz Parameter Symbol Value Unit Note/Test Condition Frequency Range Freq MHz DC Voltage Vcc V DC Current Icc ma Gain G db Pin=-3dBm Noise Figure NF db Input Return Loss RLin db Pin=-3dBm Output Return Loss RLout db Pin=-3dBm Reverse Isolation IRev db Pin=-3dBm Input P1dB IP1dB dbm SMA and PCB loss of.1 db included 27MHz Output P1dB OP1dB dbm Input IP3 IIP dbm Output IP3 OIP dbm Stability k >1 -- In-band, f1=2699mhz, f2=27mhz, Pin=-3dBm Unconditionally stable from DC to 1GHz Application Note AN27, Rev / 28

11 Summary of Measurement Results Table 5 Summary of Measurement Results for WiMax 33MHz to 37MHz Parameter Symbol Value Unit Note/Test Condition Frequency Range Freq MHz DC Voltage Vcc V DC Current Icc ma Gain G db Pin=-3dBm Noise Figure NF db Input Return Loss RLin db Pin=-3dBm Output Return Loss RLout db Pin=-3dBm Reverse Isolation IRev db Pin=-3dBm Input P1dB IP1dB dbm SMA and PCB loss of.1 db included Output P1dB OP1dB dbm Input IP3 IIP dbm Output IP3 OIP dbm Stability k >1 -- In-band, f1=3699mhz, f2=37mhz, Pin=-3dBm Unconditionally stable from DC to 1GHz Application Note AN27, Rev / 28

12 BGB741L7ESD Application Schematic 4 BGB741L7ESD Application Schematic Figure 3 Schematics of the BGB741L7ESD for 3 MHz to 5GHz applications. Table 6 Bill-of-Materials Symbol Value Unit Size Manufacturer Comment C1 1 pf 42 Various DC block/input matching C2 1 uf 42 Various RF grounding C3 1 uf 42 Various RF grounding C4 1 pf 42 Various DC block/output matching L1 27 nh 42 Murata LQG15A DC feed/ Input matching L2 27 nh 42 Murata LQG15A DC feed/output matching Rext Ω 42 Various Bias current/voltage setting (please refer to Figure 4) R1 Ω 42 Various Jumper, not used N1 BGB741L7 TSLP-7-1 Infineon Technologies SiGe:C MMIC LNA Application Note AN27, Rev / 28

13 4.1 Bias Current/Voltage Configuration BGB741L7ESD for 3MHz to 5GHz Applications BGB741L7ESD Application Schematic Figure 4 Characteristics current/voltage in function of the resistor Rext for the BGB741L7ESD biasing. This graph shows how to find the right external resistor Rext (see Figure 1) to get the working point needed for the desired application. The biasing point is important to set-up since, it affects all the signal parameters like S-parameters, linearity in Power (P1dB), linearity in frequency (IIP3) and the Noise generated by the circuit (Please refer to the table 2,3,4 and 5 for performances comparisons). Application Note AN27, Rev / 28

14 5 Measured Graphs for BGB741L7ESD for 3MHz to 5GHz Applications Measured Graphs for 25 Insertion Power Gain at 1V Figure 5 Insertion power gain of the BGB741L7ESD from 3MHz to 5GHz applications at Noise figure at 1V Figure 6 Noise figure of the BGB741L7ESD from 3MHz to 5GHz applications at. Application Note AN27, Rev / 28

15 Measured Graphs for -5 Input Matching at 1V Figure 7 Input matching of the BGB741L7ESD from 3MHz to 5GHz applications at. Output Matching at 1V Figure 8 Output matching of the BGB741L7ESD from 3MHz to 5GHz applications at. Application Note AN27, Rev / 28

16 Measured Graphs for 3 Reverse Isolation at 1V Figure 9 Reverse isolation of the BGB741L7ESD from 3MHz to 5GHz applications at. 5 Input 1dB compression point at 1V Figure 1 Input 1dB compression point of the BGB741L7ESD from 3MHz to 5GHz applications at. Application Note AN27, Rev / 28

17 Measured Graphs for 1 Input 3rd order Intercept point at 1V Figure 11 Input 3 rd interception point of the BGB741L7ESD for 3MHz to 5GHz applications at. 5 Stability K Factor at 1V Figure 12 Stability K-factor of the BGB741L7ESD for 3MHz to 5GHz applications at. Application Note AN27, Rev / 28

18 6 Measured Graphs for 3.V BGB741L7ESD for 3MHz to 5GHz Applications Measured Graphs for 3.V 25 Insertion Power Gain at Figure 13 Insertion power gain of the BGB741L7ESD from 3MHz to 5GHz applications at 3.V Noise figure at Figure 14 Noise figure of the BGB741L7ESD from 3MHz to 5GHz applications at 3.V. Application Note AN27, Rev / 28

19 Measured Graphs for 3.V -5 Input Matching at Figure 15 Input matching of the BGB741L7ESD from 3MHz to 5GHz applications at 3.V. -5 Output Matching at Figure 16 Output matching of the BGB741L7ESD from 3MHz to 5GHz applications at 3.V. Application Note AN27, Rev / 28

20 Measured Graphs for 3.V 3 Reverse Isolation at Figure 17 Reverse isolation of the BGB741L7ESD from 3MHz to 5GHz applications at 3.V. 5 Input 1dB compression point at Figure 18 Input 1dB compression point of the BGB741L7ESD from 3MHz to 5GHz applications at 3.V. Application Note AN27, Rev / 28

21 Measured Graphs for 3.V 1 Input 3rd order Intercept point at Figure 19 Input 3 rd intercept point of the BGB741L7ESD for 3MHz to 5GHz applications at 3.V. 5 Stability K Factor at Figure 2 Stability K-factor of the BGB741L7ESD for 3MHz to 5GHz applications at 3.V. Application Note AN27, Rev / 28

22 7 Measured Graphs for 4.V BGB741L7ESD for 3MHz to 5GHz Applications Measured Graphs for 4.V 25 Insertion Power Gain at Figure 21 Insertion power gain of the BGB741L7ESD from 3MHz to 5GHz applications at 4.V Noise figure at Figure 22 Noise figure of the BGB741L7ESD from 3MHz to 5GHz applications at 4.V. Application Note AN27, Rev / 28

23 Measured Graphs for 4.V -5 Input Matching at Figure 23 Input matching of the BGB741L7ESD from 3MHz to 5GHz applications at 4.V. Output Matching at Figure 24 Output matching of the BGB741L7ESD from 3MHz to 5GHz applications at 4.V. Application Note AN27, Rev / 28

24 Measured Graphs for 4.V 3 Reverse Isolation at Figure 25 Reverse isolation of the BGB741L7ESD from 3MHz to 5GHz applications at 4.V. 5 Input 1dB compression point at Figure 26 Input 1dB compression point of the BGB741L7ESD from 3MHz to 5GHz applications at 4.V. Application Note AN27, Rev / 28

25 Measured Graphs for 4.V 1 Input 3rd order Intercept point at Figure 27 Input 3 rd intercept point of the BGB741L7ESD from 3MHz to 5GHz applications 4.V. 5 Stability K Factor at Figure 28 Stability K-factor of the BGB741L7ESD for 3MHz to 5GHz applications at 4.V. Application Note AN27, Rev / 28

26 8 Evaluation Board and layout Information BGB741L7ESD for 3MHz to 5GHz Applications Evaluation Board and layout Information Figure 29 Photo picture of Evaluation Board Figure 3 PCB Layer Information Application Note AN27, Rev / 28

27 Authors BGB741L7ESD for 3MHz to 5GHz Applications Authors Anthony Thomas, Engineer in Application Engineering of RF and Protection Devices Dr. Lin Chih-I, Senior Staff Engineer of Technical Marketing of RF and Protection Devices Application Note AN27, Rev / 28

28 w w w. i n f i n e o n. c o m Published by Infineon Technologies AG AN27