BFP720. Data Sheet. RF & Protection Devices. SiGe:C Heterojunction Wideband RF Bipolar Transistor. Revision 1.0,

Transcription

1 SiGe:C Heterojunction Wideband RF Bipolar Transistor Data Sheet Revision 1.0, RF & Protection Devices

2 Edition Published by Infineon Technologies AG Munich, Germany 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

3 SiGe:C Heterojunction Wideband RF Bipolar Transistor Revision History: , Revision 1.0 Previous Revision: Page Subjects (major changes since last revision) Converted to the new IFX Template. Business Unit, Infineon Logo and the Trademarks were changed. Trademarks of Infineon Technologies AG A-GOLD, BlueMoon, COMNEON, CONVERGATE, COSIC, C166, CROSSAVE, CanPAK, CIPOS, CoolMOS, CoolSET, CONVERPATH, CORECONTROL, DAVE, DUALFALC, DUSLIC, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPACK, EconoPIM, E-GOLD, EiceDRIVER, EUPEC, ELIC, EPIC, FALC, FCOS, FLEXISLIC, GEMINAX, GOLDMOS, HITFET, HybridPACK, INCA, ISAC, ISOFACE, IsoPACK, IWORX, M-GOLD, MIPAQ, ModSTACK, MUSLIC, my-d, NovalithIC, OCTALFALC, OCTAT, OmniTune, OmniVia, OptiMOS, OPTIVERSE, ORIGA, PROFET, PRO-SIL, PrimePACK, QUADFALC, RASIC, ReverSave, SatRIC, SCEPTRE, SCOUT, S-GOLD, SensoNor, SEROCCO, SICOFI, SIEGET, SINDRION, SLIC, SMARTi, SmartLEWIS, SMINT, SOCRATES, TEMPFET, thinq!, TrueNTRY, TriCore, TRENCHSTOP, VINAX, VINETIC, VIONTIC, WildPass, X-GOLD, XMM, X-PMU, XPOSYS, XWAY. Other Trademarks AMBA, ARM, MULTI-ICE, PRIMECELL, REALVIEW, THUMB of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. Mifare of NXP. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO. OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Sattelite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update Data Sheet 3 Revision 1.0,

4 Table of Contents Table of Contents Table of Contents List of Figures List of Tables Features Product Brief Maximum Ratings Thermal Characteristics Electrical Characteristics DC Characteristics General AC Characteristics Frequency Dependent AC Characteristics Characteristic Curves Simulation Data Package Information Data Sheet 4 Revision 1.0,

5 List of Figures List of Figures Figure 1 Total Power Dissipation P tot = f (T s ) Figure 2 Permissible Pulse Load P tot_max / P tot_dc = f (tp) Figure 3 Permissible Pulse Load R thjs = f (tp) Figure 4 Testing Circuit Figure 5 Transition Frequency f T = f (I C, V CE ) f = 1 GHz, V CE Parameter in V Figure 6 Power Gain G ma,, I I² = f (f) V CE = 3 V, I C = 13 ma Figure 7 Input Matching S 11 vs. Frequency V CE = 3 V, I C = 5 ma / 13 ma Figure 8 Output Matching S 22 vs. Frequency V CE = 3 V, I C = 5 ma / 13 ma Figure 9 Source Impedance Z opt for NF min vs. Frequency V CE = 3 V, I C = 5 ma / 13 ma Figure 10 Noise Figure NF min = f (I C ) V CE = 3 V, Z S = Z opt Figure 11 Noise Figure NF min = f (f) V CE = 3 V, Z S = Z op Figure 12 Power Gain G ma, = f (I C ) V CE = 3 V, f = Parameter in GHz Figure 13 Power Gain G ma, = f (V CE ) I C = 13 ma, f = Parameter in GHz Figure 14 Package Outline SOT343 (top / side view) Figure 15 Footprint Figure 16 Marking Example (Marking : R9s) Figure 17 Tape Dimensions Data Sheet 5 Revision 1.0,

6 List of Tables List of Tables Table 1 Quick Reference DC Characteristics at T A = 25 C Table 2 Quick Reference AC Characteristics at T A = 25 C Table 3 Maximum Ratings (T A = 25 C unless otherwise specified) Table 4 Thermal Resistance Table 5 DC Characteristics at T A = 25 C Table 6 AC Characteristics at T A = 25 C Table 7 AC Characteristics, V CE = 3 V, f = 150 MHz Table 8 AC Characteristics, V CE = 3 V, f = 450 MHz Table 9 AC Characteristics, V CE = 3 V, f = 900 MHz Table 10 AC Characteristics, V CE = 3 V, f = 1500 MHz Table 11 AC Characteristics, V CE = 3 V, f = 1.9 GHz Table 12 AC Characteristics, V CE = 3 V, f = 2.4 GHz Table 13 AC Characteristics, V CE = 3 V, f = 3.5 GHz Table 14 AC Characteristics, V CE = 3 V, f = 5.5 GHz Table 15 AC Characteristics, V CE = 3 V, f = 10 GHz Data Sheet 6 Revision 1.0,

7 SiGe:C Heterojunction Wideband RF Bipolar Transistor 1 Features Main features: High performance general purpose wideband LNA transistor 150 GHz f T -Silicon Germanium Carbon technology 3 Enables Best-In-Class performance for wireless applications due to high dynamic range Transistor geometry optimized for low-current applications Operation voltage: 1.0 V to 4.0 V Very high gain at high frequencies and low current consumption 26 db maximum stable gain at 1.9 GHz and only 13 ma 15 db maximum available gain at 10 GHz and only 13 ma Ultra low noise figure from latest SiGe:C technology 0.7 db minimum noise figure at 5.5 GHz and 0.95 db at 10 GHz High linearity OP1dB = +8.5 dbm and OIP3 = +23 dbm at 5.5 GHz and low current consumption of 13 ma Pb-free (RoHS compliant) package Application FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Bluetooth, WiFi, Cordless phone, UMTS, WLAN, UWB, LNB Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions Product Name Package Pin Configuration Marking SOT343 1 = B 2 = E 3 = C 4 = E R9s Data Sheet 7 Revision 1.0,

8 Product Brief 2 Product Brief The is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in a plastic 4-pin dual emitter SOT343 package. The device combines very high gain with lowest noise figure at low operating current for use in a wide range of wireless applications. The is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Collector design supports operation voltages from 1.0 V to 4.0 V. Table 1 Quick Reference DC Characteristics at T A = 25 C Collector-emitter breakdown voltage V (BR)CEO V I C =1mA, I B =0 ma Collector-base breakdown voltage V (BR)CBO V I E =0mA Collector current I C 25 ma Total power dissipation P tot 100 mw T S 108 C DC current gain h FE V CE =3V, Data Sheet 8 Revision 1.0,

9 Product Brief Table 2 Quick Reference AC Characteristics at T A = 25 C Transition frequency f T 45 GHz V CE =3V, f = 2.4 GHz Maximum Power Gain db Transducer Gain db Z S = Z L =50 Ω Associated Gain Linearity 1 db Gain Compression Point 3 rd Order Intercept Point f = 5.5 GHz Maximum Power Gain Transducer Gain Associated Gain Linearity 1 db Gain Compression Point 3 rd Order Intercept Point NF min G ass OP 1dB OIP 3 G ma NF min G ass OP 1dB OIP db Z S = Z opt dbm Z S = Z L =50 Ω db db Z S = Z L =50 Ω db Z S = Z opt dbm Z S = Z L =50 Ω Data Sheet 9 Revision 1.0,

10 Maximum Ratings 3 Maximum Ratings Table 3 Maximum Ratings (T A = 25 C unless otherwise specified) Collector-emitter voltage V CEO 4.0 V T A = -55 C 3.5 Collector-emitter voltage V CES 13 V Collector-base voltage V CBO 13 V Emitter-base voltage V EBO 1.2 V Collector current I C 25 ma Base current I B 2 ma Total power dissipation 1) T S 108 C P tot 100 mw Operation junction temperature T JOp C Storage temperature T Stg C 1) T S measured on the emitter lead at the soldering point of the pcb Note: Exceeding only one of the above maximum rating limits even for a short moment may cause permanent damage to the device. Even if the device continues to operate, its lifetime may be considerably shortened. Maximum ratings are stress ratings only and do not mean unaffected functional operation and lifetime at others than standard operation conditions. Data Sheet 10 Revision 1.0,

11 Thermal Characteristics 4 Thermal Characteristics Table 4 Thermal Resistance Parameter Symbol Value Unit Junction - soldering point 1) R thjs 420 K/W 1)For calculation of R thja please refer to Application Note Thermal Resistance Ptot [mw] Ts [ C] Figure 1 Total Power Dissipation P tot = f (T s ) Data Sheet 11 Revision 1.0,

12 Thermal Characteristics 10 D= 0 D=.005 D=.01 D=.02 Ptot_max / Ptot_DC D=0 D= E-07 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 D=.05 D=.1 D=.2 D=.5 tp [sec] Figure 2 Permissible Pulse Load P tot_max / P tot_dc = f (tp) 1000 D=0.5 RthJS [K/W] D=0 D=.5 D=.2 D=.1 D=.05 D=.02 D=.01 D=.005 D= E-07 1.E-06 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 tp [sec] Figure 3 Permissible Pulse Load R thjs = f (tp) Data Sheet 12 Revision 1.0,

13 Electrical Characteristics 5 Electrical Characteristics 5.1 DC Characteristics Table 5 DC Characteristics at T A =25 C Collector-emitter breakdown voltage V (BR)CEO V I C =1mA, I B =0 ma Collector-emitter cutoff current I CES 30 μa V CE =13V, V BE =0 V Collector-base cutoff current I CBO 100 na V CB =5V, I E =0 ma Emitter-base cutoff current I EBO 2 μa V EB =0.5V, I C =0 ma DC current gain h FE , V CE =3V pulse measured 5.2 General AC Characteristics Table 6 AC Characteristics at T A =25 C Transition frequency f T 45 GHz, V CE =3V f =1GHz Collector-base capacitance C cb 0.06 pf V CB =3V, V BE =0 V f =1MHz emitter grounded Collector-emitter capacitance C ce 0.35 pf V CE =3V, V BE =0 V f =1MHz base grounded Emitter-base capacitance C eb 0.35 pf V EB =0.5V, V CB =0 V f =1MHz collector grounded Data Sheet 13 Revision 1.0,

14 Electrical Characteristics 5.3 Frequency Dependent AC Characteristics Measurement setup is a testfixture with Bias T s in a 50 Ω system, T A = 25 C Top View VC Bias -T OUT E C VB IN Bias-T B (Pin 1) E Figure 4 Testing Circuit Table 7 AC Characteristics, V CE = 3 V, f =150MHz Maximum Power Gain db Transducer Gain db Z S = Z L =50 Ω Associated Gain Linearity 1 db Gain Compression Point 3rd Order Intercept Point NF min G ass OP 1dB OIP db Z S = Z opt dbm Z S = Z L =50 Ω Data Sheet 14 Revision 1.0,

15 Electrical Characteristics Table 8 AC Characteristics, V CE = 3 V, f =450MHz Maximum Power Gain db Transducer Gain db Z S = Z L =50 Ω Associated Gain Linearity 1 db Gain Compression Point 3 rd Order Intercept Point NF min G ass OP 1dB OIP db Z S = Z opt dbm Z S = Z L =50 Ω Table 9 AC Characteristics, V CE = 3 V, f =900MHz Maximum Power Gain db Transducer Gain db Z S = Z L =50 Ω Associated Gain Linearity 1 db Gain Compression Point 3 rd Order Intercept Point NF min G ass OP 1dB OIP db Z S = Z opt dbm Z S = Z L =50 Ω Data Sheet 15 Revision 1.0,

16 Electrical Characteristics Table 10 AC Characteristics, V CE = 3 V, f =1500MHz Maximum Power Gain db Transducer Gain db Z S = Z L =50 Ω Associated Gain Linearity 1 db Gain Compression Point 3 rd Order Intercept Point NF min G ass OP 1dB OIP db Z S = Z opt dbm Z S = Z L =50 Ω Table 11 AC Characteristics, V CE = 3 V, f = 1.9 GHz Maximum Power Gain db Transducer Gain db Z S = Z L =50 Ω Associated Gain Linearity 1 db Gain Compression Point 3 rd Order Intercept Point NF min G ass OP 1dB OIP db Z S = Z opt dbm Z S = Z L =50 Ω Data Sheet 16 Revision 1.0,

17 Electrical Characteristics Table 12 AC Characteristics, V CE = 3 V, f = 2.4 GHz Maximum Power Gain db Transducer Gain db Z S = Z L =50 Ω Associated Gain Linearity 1 db Gain Compression Point 3 rd Order Intercept Point NF min G ass OP 1dB OIP db Z S = Z opt dbm Z S = Z L =50 Ω Table 13 AC Characteristics, V CE = 3 V, f = 3.5 GHz Maximum Power Gain db Transducer Gain db Z S = Z L =50 Ω Associated Gain Linearity 1 db Gain Compression Point 3 rd Order Intercept Point NF min G ass OP 1dB OIP db Z S = Z opt dbm Z S = Z L =50 Ω Data Sheet 17 Revision 1.0,

18 Electrical Characteristics Table 14 AC Characteristics, V CE = 3 V, f = 5.5 GHz Maximum Power Gain db G ma Transducer Gain db Z S = Z L =50 Ω Associated Gain Linearity 1 db Gain Compression Point 3 rd Order Intercept Point NF min G ass OP 1dB OIP db Z S = Z opt dbm Z S = Z L =50 Ω Table 15 AC Characteristics, V CE = 3 V, f =10GHz Maximum Power Gain db G ma G ma Transducer Gain db Z S = Z L =50 Ω 9 10 Associated Gain Linearity 1 db Gain Compression Point 3 rd Order Intercept Point NF min G ass OP 1dB OIP 3 Notes 1. = I / S 12 I for k < 1; G ma = I / S 12 I(k-(k 2-1) 1/2 ) for k > 1 2. In order to get the NF min values stated in this chapter the test fixture losses have been subtracted from all measured results db Z S = Z opt dbm Z S = Z L =50 Ω Data Sheet 18 Revision 1.0,

19 Electrical Characteristics 5.4 Characteristic Curves V V 30 ft [GHz] V 0.5 V Ic [ma] Figure 5 Transition Frequency f T = f (I C, V CE ) f = 1 GHz, V CE Parameter in V G [db] G ma f [GHz] Figure 6 Power Gain G ma,, I I² = f (f) V CE = 3 V, I C = 13 ma Data Sheet 19 Revision 1.0,

20 Electrical Characteristics GHz 5 GHz GHz 5 GHz 4 GHz GHz 7 GHz 6 GHz GHz 8 GHz 7 GHz 9 GHz 10 GHz mA 13mA Swp Max 10GHz GHz GHz 2 GHz GHz 1 GHz GHz GHz Swp Min 0GHz Figure 7 Input Matching S 11 vs. Frequency V CE = 3 V, I C = 5 ma / 13 ma GHz GHz 7 GHz 6 GHz 10 GHz 5 GHz GHz 8 GHz 7 GHz 6 GHz 5 GHz mA 13mA 4 GHz 3 GHz 2 GHz 4 GHz 3 GHz GHz GHz Swp Max 10GHz GHz Swp Min 0GHz Figure 8 Output Matching S 22 vs. Frequency V CE = 3 V, I C = 5 ma / 13 ma Data Sheet 20 Revision 1.0,

21 Electrical Characteristics GHz 5.5GHz 2.4GHz 2.4GHz GHz GHz 0.45GHz Swp Max 10GHz Δ: Ic = 13mA Δ: Ic = 13mA : Ic = 5mA : Ic = 5mA GHz Swp Min 0.45GHz Figure 9 Source Impedance Z opt for NF min vs. Frequency V CE = 3 V, I C = 5 ma / 13 ma F [db] I c [ma] f = 10GHz f = 5.5GHz f = 2.4GHz f = 1.9GHz f = 0.45GHz Figure 10 Noise Figure NF min = f (I C ) V CE = 3 V, Z S = Z opt Data Sheet 21 Revision 1.0,

22 Electrical Characteristics F [db] I C = 13mA I C = 5.0mA f [GHz] Figure 11 Noise Figure NF min = f (f) V CE = 3 V, Z S = Z op GHz GHz G [db] GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz GHz GHz I C [ma] Figure 12 Power Gain G ma, = f (I C ) V CE = 3 V, f = Parameter in GHz Data Sheet 22 Revision 1.0,

23 Electrical Characteristics GHz 36 G [db] GHz 0.90GHz 1.50GHz 1.90GHz 2.40GHz 3.50GHz 5.50GHz GHz V CE [V] Figure 13 Power Gain G ma, = f (V CE ) I C = 13 ma, f = Parameter in GHz Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves. Data Sheet 23 Revision 1.0,

24 Simulation Data 6 Simulation Data For SPICE-model as well as for S-parameters including noise parameters please refer to our internet website: Please consult our website and download the latest versions before actually starting your design. The simulation data have been generated and verified using typical devices. The nonlinear SPICE-model reflects the typical DC- and RF-device performance with high accuracy. Data Sheet 24 Revision 1.0,

25 Package Information 7 Package Information 4 2 ± MAX ±0.1 A x 0.1 M ± MIN. 0.2 M A ±0.1 SOT343-PO V08 Figure 14 Package Outline SOT343 (top / side view) SOT343-FP V08 Figure 15 Footprint Figure 16 Marking Example (Marking : R9s) Pin SOT323-TP V02 Figure 17 Tape Dimensions Data Sheet 25 Revision 1.0,

26 Published by Infineon Technologies AG