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1 BFP84FESD Low Noise Amplifier for 3.4GHz - 3.8GHz (Band 42/ 43) Technical Report TR1129 Revision: Rev. 1.1 RF and Protection Devices

2 Edition Published by Infineon Technologies AG Munich, Germany 213 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office ( Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

3 BFP84FESD Technical Report TR1129 Revision History: Previous Revision: Page Subjects (major changes since last revision) 17 to 22 Figure 17 to Figure 28: Temperature measurement results are included Trademarks of Infineon Technologies AG AURIX, C166, CanPAK, CIPOS, CIPURSE, EconoPACK, CoolMOS, CoolSET, CORECONTROL, CROSSAVE, DAVE, DI-POL, EasyPIM, EconoBRIDGE, EconoDUAL, EconoPIM, EconoPACK, EiceDRIVER, eupec, FCOS, HITFET, HybridPACK, I²RF, ISOFACE, IsoPACK, MIPAQ, ModSTACK, my-d, NovalithIC, OptiMOS, ORIGA, POWERCODE, PRIMARION, PrimePACK, PrimeSTACK, PRO-SIL, PROFET, RASIC, ReverSave, SatRIC, SIEGET, SINDRION, SIPMOS, SmartLEWIS, SOLID FLASH, TEMPFET, thinq!, TRENCHSTOP, TriCore. Other Trademarks Advance Design System (ADS) of Agilent Technologies, AMBA, ARM, MULTI-ICE, KEIL, PRIMECELL, REALVIEW, THUMB, µvision of ARM Limited, UK. AUTOSAR is licensed by AUTOSAR development partnership. Bluetooth of Bluetooth SIG Inc. CAT-iq of DECT Forum. COLOSSUS, FirstGPS of Trimble Navigation Ltd. EMV of EMVCo, LLC (Visa Holdings Inc.). EPCOS of Epcos AG. FLEXGO of Microsoft Corporation. FlexRay is licensed by FlexRay Consortium. HYPERTERMINAL of Hilgraeve Incorporated. IEC of Commission Electrotechnique Internationale. IrDA of Infrared Data Association Corporation. ISO of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB of MathWorks, Inc. MAXIM of Maxim Integrated Products, Inc. MICROTEC, NUCLEUS of Mentor Graphics Corporation. MIPI of MIPI Alliance, Inc. MIPS of MIPS Technologies, Inc., USA. murata of MURATA MANUFACTURING CO., MICROWAVE OFFICE (MWO) of Applied Wave Research Inc., OmniVision of OmniVision Technologies, Inc. Openwave Openwave Systems Inc. RED HAT Red Hat, Inc. RFMD RF Micro Devices, Inc. SIRIUS of Sirius Satellite Radio Inc. SOLARIS of Sun Microsystems, Inc. SPANSION of Spansion LLC Ltd. Symbian of Symbian Software Limited. TAIYO YUDEN of Taiyo Yuden Co. TEAKLITE of CEVA, Inc. TEKTRONIX of Tektronix Inc. TOKO of TOKO KABUSHIKI KAISHA TA. UNIX of X/Open Company Limited. VERILOG, PALLADIUM of Cadence Design Systems, Inc. VLYNQ of Texas Instruments Incorporated. VXWORKS, WIND RIVER of WIND RIVER SYSTEMS, INC. ZETEX of Diodes Zetex Limited. Last Trademarks Update Technical Report, Rev / 26

4 BFP84FESD Table of Content 1 Application Circuit and Performance Overview Summary of Measurement Results High Gain Low Noise Amplifier using BFP84FESD for GHz LTE Application Schematics and Bill-of-Materials Measured Graphs Evaluation Board and layout Information Authors List of Figures Figure 1 Package and pin connections of BFP84FESD in Topview... 6 Figure 2 Schematics of BFP84FESD Low Noise Amplifier for GHz Application... 8 Figure 3 Insertion Power Gain of the GHz LNA with BFP84FESD... 1 Figure 4 Wideband Insertion Power Gain of the GHz LNA with BFP84FESD... 1 Figure 5 Noise Figure of BFP84FESD LNA for MHz Figure 6 Reverse Isolation of the GHz LNA with BFP84FESD Figure 7 Input Matching of the GHz LNA with BFP84FESD Figure 8 Input Matching of the GHz LNA with BFP84FESD (Smith Chart) Figure 9 Output Matching of the GHz LNA with BFP84FESD Figure 1 Output Matching of the GHz LNA with BFP84FESD (Smith Chart) Figure 11 Wideband Stability k Factor of the GHz LNA with BFP84FESD Figure 12 Wideband Stability Mu Factor of the GHz LNA with BFP84FESD Figure 13 1dB Compression Point of the BFP84FESD Circuit at 36 MHz Figure 14 Output 3 rd Order Intercept Point of BFP84FESD at 36 MHz Figure 15 OFF-Mode (Vcc = V, Icc = ma) S21 of the GHz LNA with BFP84FESD Figure 16 OFF-Mode (Vcc = V, Icc = ma) S21 of the GHz LNA with BFP84FESD Figure 17 Bias current in the Temperature Range from -4 C to 85 C (Vcc=3. V) Figure 18 Noise Figure of BFP84FESD LNA in the Temperature Range from -4 C to 85 C (Vcc=3.V) Figure 19 BFP84FESD LNA Insertion Power Gain in the Temperature Range from -4 C to 85 C (Vcc=3. V) Figure 2 BFP84FESD LNA Reverse Isolation in the Temperature Range from -4 C to 85 C (Vcc=3.V) 18 Figure 21 BFP84FESD LNA Input Matching in the Temperature Range from -4 C to 85 C (Vcc=3. V) Figure 22 BFP84FESD LNA Input Matching in the Temperature Range from -4 C to 85 C (Smith Chart) (Vcc=3. V) Figure 23 BFP84FESD LNA Output Matching in the Temperature Range from -4 C to 85 C (Vcc=3.V)... 2 Figure 24 BFP84FESD LNA Output Matching in the temperature range from -4 C to 85 C (Smith Chart) Figure 25 (Vcc=3. V) dB Compression Point of the BFP84FESD LNA at 3.6 GHz in the Temperature Range from -4 C to 85 C (Vcc=3. V) Figure 26 K Factor of the BFP84FESD LNA in the Temperature Range from -4 C to 85 C (Vcc=3. V) Figure 27 µ1 Factor of the BFP84FESD LNA in the Temperature Range from -4 C to 85 C (Vcc=3. V) Figure 28 µ2 Factor of the BFP84FESD LNA in the Temperature Range from -4 C to 85 C (Vcc=3. V) Figure 29 Photo Picture of Evaluation Board Figure 3 Zoom-In Picture of the BFP84FESD GHz LNA Evaluation Board Figure 31 Layout Proposal for RF Grounding of the GHz LNA with BFP84FESD Figure 32 PCB Layer Information List of Tables Table 1 Summary of Measurement Results... 5 Table 2 Bill-of-Materials... 9 Technical Report, Rev / 26

5 BFP84FESD 1 Application Circuit and Performance Overview Device: BFP84FESD Application: (Band 42/ 43) PCB Marking: M mmEDG TSFP-4-1 BFP84FESD 1.1 Summary of Measurement Results Table 1 Summary of Measurement Results Parameter Symbol Value Unit Note/Test Condition DC Voltage Vcc 3. V DC Current Icc 14.5 ma Frequency Range Freq MHz Gain G db Noise Figure NF db Input Return Loss RLin db Output Return Loss RLout db Reverse Isolation IRev db SMA and PCB losses (~.5 db) are subtracted Input P1dB IP1dB dbm 36MHz Output P1dB OP1dB 4.1 dbm Input IP3 IIP3-3 dbm Output IP3 OIP dbm 36MHz, f =1 MHz, Pin= - 3 dbm Stability k > Measured up to 15 GHz Technical Report, Rev / 26

6 XYs BFP84FESD Application Circuit and Performance Overview 1.2 High Gain Low Noise Amplifier using BFP84FESD for GHz LTE Application The BFP84FESD is a discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance GHz low noise amplifier (LNA) solutions for LTE connectivity applications. It combines the 8 GHz ft silicon-germanium:carbide (SiGe:C) B9HFM process with special device geometry engineering to reduce the parasitic capacitance between substrate and transistor that degrades high-frequency characteristics, resulting in an inherent input matching and a major improvement in power gain Band 42/43 together with a low noise figure performance that is industry's best. The BFP84FESD has an integrated 1.5kV HBM ESD protection which makes the device robust against electrostatic discharge and extreme RF input power. The device offers its high performance at low current and voltage and is especially well-suited for portable battery powered applications in which energy efficiency is a key requirement. The BFP84FESD is housed in flat-leads TSFP-4-1 package. Further variants are available in industry standard visible-leads SOT343 package (BFP84ESD) and in the low-height.31mm TSLP-3-9 package (BFR84L3RHESD) specially fitting into modules. Figure 1 shows the pin assignment of package of BFP84FESD in the top view: B 1 4 E E 2 3 BFPXXXF C Figure 1 Package and pin connections of BFP84FESD in Topview Technical Report, Rev / 26

7 BFP84FESD Application Circuit and Performance Overview This application note presents the measurement results of the Low Noise Amplifier using BFP84FESD for 34 MHz to 38 MHz LTE applications. It requires 1 passive 42 SMD components and can provide 17.7 db gain at 36 MHz. The noise figure varies from 1.3 db to 1.8 db (SMA and PCB losses are subtracted) over the frequency band. The circuit achieves an input return loss of 12 db and output return loss 24 db. Furthermore, the circuit is unconditionally stable from 1 MHz to 15 GHz. However, Proper RF grounding on PCB has to be ensured in order to achieve stability k-factor > 1 (Figure 3111). At 36 MHz, using two tones spacing of 1 MHz, the output third order intercept point OIP3 reaches 14.7 dbm. Besides, we obtain input 1dB input compression point IP1dB of dbm at 36 MHz. Technical Report, Rev / 26

8 BFP84FESD Application Circuit and Performance Overview 1.3 Schematics and Bill-of-Materials V cc = 3. V All passives are 42 case size Inductors: LQG Series Capacitors: Various J3 DC Connector I = 14.5 ma C3 39 pf R1 33 kω R2 2 Ω C4 39 pf J1 RF Port1 INPUT C1 6.8 pf L1 1.8 nh Q1 BFP84FESD R3 1 Ω R4 5.1 Ω L2 1.6 nh C2 1.2 pf J2 RF Port2 OUTPUT Please refer to chapter 5 for layout proposal PCB = M BFP84FESD TSFP-4-1 PCB Board Material = Standard FR4 Layer spacing (top RF to internal ground plane):.2 mm Total Component Count = 1 including BFP84FESD transistor Inductors = 2 (Low Q) Resistors = 4 Capacitors = 4 Figure 2 Schematics of BFP84FESD Low Noise Amplifier for GHz Application Technical Report, Rev / 26

9 BFP84FESD Application Circuit and Performance Overview Table 2 Bill-of-Materials Symbol Value Unit Size Manufacturer Comment C1 6.8 pf 42 Various DC block & input matching C2 1.2 pf 42 Various DC block & output matching C3 39 pf 42 Various RF decoupling C4 39 pf 42 Various RF decoupling L1 1.8 nh 42 LQG Input matching L2 1.6 nh 42 LQG Output matching and high frequency stability improvement R1 33 kω 42 Various DC biasing DC biasing (provides DC negative feedback to stabilize DC operating point R2 2 Ω 42 Various over temperature variation, transistor hfe variation, etc.) R3 1 Ω 42 Various Stability and input/output mathcing R4 5.1 Ω 42 Various Output matching and stability improvement Q1 TSLP-4-1 Infineon Technologies BFP84FESD SiGe: C Heterojunction Bipolar RF Transistor Technical Report, Rev / 26

10 BFP84FESD Measured Graphs 2 Measured Graphs 2 Insertion Power Gain InBand 1 36 MHz 17.7 db 34 MHz 18.2 db 38 MHz 17.2 db Frequency (MHz) Figure 3 Insertion Power Gain of the GHz LNA with BFP84FESD 2 Insertion Power Gain WideBand 1 34 MHz 18.2 db 36 MHz 17.7 db 38 MHz 17.2 db Frequency (MHz) Figure 4 Wideband Insertion Power Gain of the GHz LNA with BFP84FESD Technical Report, Rev / 26

11 NF(dB) BFP84FESD Measured Graphs 2 Noise Figure_3G4_3G MHz 1.8 db 38 MHz 1.8 db 1 36 MHz 1.3 db Frequency (MHz) Figure 5 Noise Figure of BFP84FESD LNA for MHz -2 Reverse Isolation MHz db 36 MHz db 38 MHz -29 db Frequency (MHz) Figure 6 Reverse Isolation of the GHz LNA with BFP84FESD Technical Report, Rev / 26

12 BFP84FESD Measured Graphs Input Matching 36 MHz db MHz db 38 MHz db Frequency (MHz) Figure 7 Input Matching of the GHz LNA with BFP84FESD.6 Input Matching Smith Swp Max 5MHz MHz r x MHz r x MHz r x Swp Min 2MHz Figure 8 Input Matching of the GHz LNA with BFP84FESD (Smith Chart) Technical Report, Rev / 26

13 BFP84FESD Measured Graphs Output Matching 38 MHz -15 db MHz db 36 MHz db Frequency (MHz) Figure 9 Output Matching of the GHz LNA with BFP84FESD.6 Output Matching Smith Swp Max 5MHz MHz r x MHz r x MHz r x Swp Min 2MHz Figure 1 Output Matching of the GHz LNA with BFP84FESD (Smith Chart) Technical Report, Rev / 26

14 BFP84FESD Measured Graphs 3 Stability k Factor MHz Frequency (MHz) Figure 11 Wideband Stability k Factor of the GHz LNA with BFP84FESD 4 MU1 MU2 Stability Mu Factor Frequency (MHz) Figure 12 Wideband Stability Mu Factor of the GHz LNA with BFP84FESD Technical Report, Rev / 26

15 Power (dbm) Gain(dB) BFP84FESD Measured Graphs 25 2 Input 1dB Compression Point_3G dbm db dbm db Pin (dbm) Figure 13 1dB Compression Point of the BFP84FESD Circuit at 36 MHz Output 3rd Order Intercept Point_3G6 36 MHz MHz MHz MHz Frequency (MHz) Figure 14 Output 3 rd Order Intercept Point of BFP84FESD at 36 MHz Technical Report, Rev / 26

16 BFP84FESD Measured Graphs MHz db OFF_Mode 38 MHz db MHz db Frequency (MHz) Figure 15 OFF-Mode (Vcc = V, Icc = ma) S21 of the GHz LNA with BFP84FESD MHz db OFF_Mode 38 MHz db MHz db Frequency (MHz) Figure 16 OFF-Mode (Vcc = V, Icc = ma) S21 of the GHz LNA with BFP84FESD Technical Report, Rev / 26

17 NF (db) Icc (ma) BFP84FESD Measured Graphs DegC 16.8 Bias Current 25 DegC 14.6 PlotCol(1,2) Bias_current DegC Temperature (DegC) Figure 17 Bias current in the Temperature Range from -4 C to 85 C (Vcc=3. V) 1.5 Noise Figure C C 25 C 5 C 85 C Frequency (GHz) Figure 18 Noise Figure of BFP84FESD LNA in the Temperature Range from -4 C to 85 C (Vcc=3.V) Technical Report, Rev / 26

18 S12 (db) S21 (db) BFP84FESD Measured Graphs GHz 18.9 db 3.8 GHz db GHz db 3.8 GHz 16.4 db C C 25 C 5 C 85 C Frequency (GHz) Figure 19 BFP84FESD LNA Insertion Power Gain in the Temperature Range from -4 C to 85 C (Vcc=3. V) C C 25 C 5 C 85 C Frequency (GHz) Figure 2 BFP84FESD LNA Reverse Isolation in the Temperature Range from -4 C to 85 C (Vcc=3.V) Technical Report, Rev / 26

19 S11 (db) BFP84FESD Measured Graphs GHz db -4 C C 25 C 5 C 85 C 3.8 GHz db GHz db 3.8 GHz db Frequency (GHz) Figure 21 BFP84FESD LNA Input Matching in the Temperature Range from -4 C to 85 C (Vcc=3. V).6 S11.8 Swp Max 4GHz C C 25 C 5 C 85 C Swp Min 3.2GHz Figure 22 BFP84FESD LNA Input Matching in the Temperature Range from -4 C to 85 C (Smith Chart) (Vcc=3. V) Technical Report, Rev / 26

20 S22 (db) BFP84FESD Measured Graphs GHz db GHz db C C 25 C 5 C 85 C Frequency (GHz) Figure 23 BFP84FESD LNA Output Matching in the Temperature Range from -4 C to 85 C (Vcc=3.V).6.8 S Swp Max 4GHz C C 25 C 5 C 85 C Swp Min 3.2GHz Figure 24 BFP84FESD LNA Output Matching in the temperature range from -4 C to 85 C (Smith Chart) (Vcc=3. V) Technical Report, Rev / 26

21 Output power (dbm) BFP84FESD Measured Graphs dbm dbm dbm dbm C C 25 C 5 C 85 C Input power (dbm) Figure 25 1dB Compression Point of the BFP84FESD LNA at 3.6 GHz in the Temperature Range from -4 C to 85 C (Vcc=3. V) 5 K factor GHz C C 25 C 5 C 85 C Frequency (GHz) Figure 26 K Factor of the BFP84FESD LNA in the Temperature Range from -4 C to 85 C (Vcc=3. V) Technical Report, Rev / 26

22 BFP84FESD Measured Graphs 4 u C C 25 C 5 C 85 C Frequency (GHz) Figure 27 µ1 Factor of the BFP84FESD LNA in the Temperature Range from -4 C to 85 C (Vcc=3. V) 4 u C C 25 C 5 C 85 C Frequency (GHz) Figure 28 µ2 Factor of the BFP84FESD LNA in the Temperature Range from -4 C to 85 C (Vcc=3. V) Technical Report, Rev / 26

23 3 Evaluation Board and layout Information In this Technical Report, the following PCB is used: BFP84FESD Evaluation Board and layout Information PCB Marking: M mmEDG TSFP-4-1 BFP84FESD PCB Board Material: Standard FR4 ᵋr of PCB Material: 4.3 (FR4) Figure 29 Photo Picture of Evaluation Board Figure 3 Zoom-In Picture of the BFP84FESD GHz LNA Evaluation Board Technical Report, Rev / 26

24 BFP84FESD Evaluation Board and layout Information.3mm BFP84FESD.6mm Figure 31 Layout Proposal for RF Grounding of the GHz LNA with BFP84FESD Vias FR4 Core,.2 mm Copper 35µm FR4 Prepreg,.8 mm Figure 32 PCB Layer Information Technical Report, Rev / 26

25 BFP84FESD Authors 4 Authors Shamsuddin Ahmed, Application Engineer of Business Unit RF and Protection Devices Fang Jie, Application Engineer of Business Unit RF and Protection Devices Technical Report, Rev / 26

26 w w w. i n f i n e o n. c o m Published by Infineon Technologies AG TR1129