Introduction... 2 Optocoupler Overview... 3 Effects of System Transients... 3 Effects of EMI... 6 Conclusion... 6
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- Horace Casey
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1 APPLICATION NOTE Use of Optocouplers in Battery AN1975 Rev 0.00 Abstract Optocouplers can present challenges when used in noisy environments. These devices are often used to provide an enable function in Battery (BMS). This applications note discusses the issues that can occur in such systems when operating with high levels of system transients or Electromagnetic Interference (EMI), and provides simple solutions to the problems encountered. Table of Contents Introduction Optocoupler Overview Effects of System Transients Effects of EMI Conclusion List of Figures FIGURE 1. Battery Management System Diagram FIGURE 2. Optocoupler Equivalent Circuit FIGURE 3. Simplified Optocoupler Simulation Circuit FIGURE 4. Input Waveform (Vx) used for Optocoupler Circuit Simulations FIGURE 5. Enable Signal Waveforms Produced by Optocoupler Simulation FIGURE 6. Detail of Enable Signal Waveforms FIGURE 7. Recommended Optocoupler Circuit FIGURE 8. Recommended Circuit of Figure 7 - Enable Signal Response to 3kV Common-Mode Transient AN1975 Rev 0.00 Page 1 of 7
2 Introduction The optocoupler's primary function is to transmit a signal across an isolation barrier. The isolation in the optocoupler is provided by a physical barrier between the input and output devices. Light generated by an integrated LED passes through this barrier and provides base current to the output bipolar transistor device. As with any isolation barrier there are parasitic leakage paths, which carry unwanted signals from input to output. The primary leakage elements in optocouplers are capacitive and provide a common-mode signal path between input and output, which responds to changes in the grounds associated with the input and output circuits. Figure 1 shows a diagram of an automotive BMS. The system is split into two voltage domains: High Voltage (HV) and Low Voltage (LV). These domains are isolated from each other. The LV side is typically connected to system ground (chassis), while the HV side, which contains the batteries, is typically floating. Large transients can occur between the LV and HV grounds when the HV side is connected to another system, such as a battery charger, or when the battery charger changes current level abruptly. These transients, represented by voltage Vx in Figure 1, then appear directly across any optocoupler or other isolation devices used to carry signals between the LV and HV domains. + HV CHARGER BMS ICs ISOLATION OPTOCOUPLER Vx 12V + µc + LOGIC LV ISOLATION FIGURE 1. BATTERY MANAGEMENT SYSTEM DIAGRAM AN1975 Rev 0.00 Page 2 of 7
3 Optocoupler Overview A simplified equivalent circuit of an optocoupler is shown in Figure 2. Cw Effects of System Transients A simplified model of the optocoupler can be used to show the effect of the common-mode transients on the optocoupler output. Figure 3 shows a circuit arranged to provide an enable function. The common-mode voltage between the LV and HV grounds is shown as Vx. Cz Cy Cx Note that the optocoupler output transistor is shown on the high-side of the enable output, with the load resistor (R 1 ) to ground. There are two reasons to choose this arrangement. The first is that the circuit draws no current when enable is low. The second concerns resistance to EMI. More on this later. FIGURE 2. OPTOCOUPLER EQUIVALENT CIRCUIT Referring to Figure 2, capacitor Cx is dependent on the characteristics of the output transistor. Capacitors Cw, Cy and Cz are parasitic elements related to the process and layout of the optocoupler die. There are various techniques employed in the optocoupler design to minimize the effect of these parasitic elements, but the effects can never be completely eliminated. Cw and Cx are typically specified in optocoupler datasheets while Cy and Cz are not typically specified. Also note that Cw, Cy and Cz will have a strong voltage dependence so the effects seen in response to transients will vary with the voltage across the optocoupler. Simulations run with various values for external components R 1, R 2 and C 1 show the effect of common-mode transients on the enable output signal. The waveform used for these simulations is shown in Figure 4. The enable signal response for various circuit arrangements is shown in Figure 5, while Figure 6 shows detail of the reset event signals. The enable input falling threshold (EN Vth) is nominally 0.3 x 3.3V or approximately 1V and is shown on Figures 5 and 6 for reference. LV SIDE HV SIDE 5µA R 2 0.8pF 0.05pF 10pF 0.1pF BC547 R 1 C 1 ENABLE + 3.3V + Vx ISOLATION BARRIER FIGURE 3. SIMPLIFIED OPTOCOUPLER SIMULATION CIRCUIT AN1975 Rev 0.00 Page 3 of 7
4 FIGURE 4. INPUT WAVEFORM (Vx) USED FOR OPTOCOUPLER CIRCUIT SIMULATIONS R1 = 20k, R2 = 2k, C1 = open R1 = 20k, R2 = 2k, C1 = 100pF R1 = 20k, R2 = 0, C1 = open R1 = 10k, R1 = 0, C1 = 10nF EN Vth FIGURE 5. ENABLE SIGNAL WAVEFORMS PRODUCED BY OPTOCOUPLER SIMULATION AN1975 Rev 0.00 Page 4 of 7
5 R1 = 20k, R2 = 2k, C1 = open R1 = 20k, R2 = 0, C1 = open R1 = 20k, R2 = 2k, C1 = 100pF R1 = 10k, R1 = 0, C1 = 10nF EN Vth FIGURE 6. DETAIL OF ENABLE SIGNAL WAVEFORMS Examination of Figures 5 and 6 shows that, with an input transient of -250V, a reset event would occur with the case where R 1 = 20k and R 2 = 2k. Other simulations show progressive improvement as R 2 is reduced in value or if C 1 is increased in value. The result when R 1 = 10k and C 1 = 10nF, with R 2 is shorted, is seen in the green trace on Figures 5 and 6. This leads to the recommended circuit arrangement shown in Figure 7, which has only two components (R 1 and C 1 ). R 2 is not used. An additional simulation shows the effect of a 3kV common-mode transient on the enable output of Figure 7. The input (Vx) signal used for this simulation has the same form as that shown in Figure 4, except that the peak value in this case is 3kV. The result can be seen in Figure 8, which shows no reset event in response to a 3kV transient. 3.3V ENABLE 10k 10nF HV GND FIGURE 7. RECOMMENDED OPTOCOUPLER CIRCUIT AN1975 Rev 0.00 Page 5 of 7
6 Enable EN Vth Effects of EMI High frequency modulation of the isolation voltage Vx couples to the optocoupler output transistor base through capacitor Cy (see Figure 2). This results in an average DC current flowing from the emitter of the output transistor through the load resistor R 1 (see Figure 3). This effect of this is often seen as a delay in the time required to turn off the Enable signal in cases where the system is subject to high levels of EMI and value of R 1 is too large, and can be reduced or eliminated simply by reducing the value of R 1. For example, reducing the value of R 1 from 10k to 1k will improve EMI immunity by a factor of 10. The only penalty of this change is an increase in the current drawn by the Enable circuit, when the enable signal is high, from 330µA (10k) to 3.3mA (1k). Conclusion FIGURE 8. RECOMMENDED CIRCUIT OF FIGURE 7 - ENABLE SIGNAL RESPONSE TO 3kV COMMON-MODE TRANSIENT Optocoupler circuits need careful design to eliminate effects due to system transients and EMI. The simple addition of a filter capacitor can provide immunity to transient voltages in excess of 3kV. EMI effects are addressed by appropriate selection of the optocoupler load resistor. AN1975 Rev 0.00 Page 6 of 7
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NP45N6VDK 6 V 45 A N-channel Power MOS FET Application: Automotive Data Sheet R7DS295EJ2 Rev.2. May 24, 28 Description NP45N6VDK is N-channel MOS Field Effect Transistor designed for high current switching
Part Number Lead Plating Packing Package 2SK1581C-T1B-A/AT -A:Sn-Bi, -AT:Pure Sn 3000p/Reel SC-59 (3pMM)
N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R7DS1287EJ2 Rev.2. Description The 2SK1581C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly
2SK E. Data Sheet. 1500V - 2A - MOS FET High Speed Power Switching. Features. Outline. Absolute Maximum Ratings. R07DS1275EJ0200 Rev.2.
SK5-8-E 5V - A - MOS FET High Speed Power Switching Data Sheet R7DS75EJ Rev.. Features High breakdown voltage (V DSS = 5 V) High speed switching Low drive current Outline RENESAS Package code: PRSSZD-A
RJP4301APP-M0. Preliminary Datasheet. Nch IGBT for Strobe Flash. Features. Outline. Applications. Maximum Ratings. R07DS0749EJ0100 Rev.1.
Nch IGBT for Strobe Flash Datasheet R07DS0749EJ0100 Rev.1.00 Features V CES : 430 V TO-220FL package High Speed Switching Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 2 1 1 : Gate
Part Number Lead Plating Packing Package µpa502ct-t1-a/at -A : Sn-Bi, -AT : Pure Sn 3000p/Reel SC-74A (5pMM)
µpa52ct N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R7DS277EJ2 Rev.2. Jul 6, 25 Description The µpa52ct, N-channel vertical type MOSFET designed for general-purpose switch, is a device which
APPLICATION NOTE. Introduction. Question 1. Question 4. Question 2. Question 3. Everything You Always Wanted to Know About the ICL8038
APPLIATION NOTE Everything You Always Wanted to Know About the IL03 AN013 Rev.1.00 Introduction The 03 is a function generator capable of producing sine, square, triangular, sawtooth and pulse waveforms
APPLICATION NOTE. Introduction. Getting Started. isim ISL6742 Virtual Evaluation Platform. AN1245 Rev 0.00 Page 1 of 9. March 8, AN1245 Rev 0.
APPLICATION NOTE isim ISL6742 Virtual Evaluation AN1245 Rev 0.00 Introduction Intersil s isim is an interactive, web-based tool for selecting and simulating products and their applications from Intersil
APPLICATION NOTE. Abstract. Table of Contents. List of Figures. ISL29501 Sand Tiger Optics Application Note. AN1966 Rev 0.00 Page 1 of 6.
APPLICATION NOTE ISL29501 Sand Tiger Optics AN1966 Rev 0.00 Abstract This application note describes important optical and opto-mechanical features of the ISL29501 Sand Tiger distance measurement system.
APPLICATION NOTE. Abstract. Contents. List of Figures. Voltage Feedback versus Current Feedback Operational Amplifiers
APPLICATION NOTE AN993 Rev.0.00 May 3, 208 Abstract This application note compares the basic performance features of Voltage Feedback (VFB) and Current Feedback (CFB) operational amplifiers (op amps),
RMLV0808BGSB - 4S2. 8Mb Advanced LPSRAM (1024k word 8bit) Description. Features. Part Name Information. R10DS0232EJ0200 Rev
8Mb Advanced LPSRAM (1024k word 8bit) Description The RMLV0808BGSB is a family of 8-Mbit static RAMs organized 1,048,576-word 8-bit, fabricated by Renesas s high-performance Advanced LPSRAM technologies.
Types of Ambient Light Sensors
APPLICATION NOTE Making Sense of Light Sensors AN1311 Rev 0.00 As electronics seamlessly weave their way into our lives, sensors play an increasingly important role. Light sensors are one of the simplest
RJP65T54DPM-A0. Data Sheet. 650V - 30A - IGBT Application: Partial switching circuit. Features. Outline. Absolute Maximum Ratings
3 RJP65T54DPM-A 65V - 3A - IGBT Application: Partial switching circuit Data Sheet R7DS365EJ Rev.. Dec 9, 6 Features Low collector to emitter saturation voltage V CE(sat) =.35 V typ. (at I C = 3 A, V GE
APPLICATION NOTE. Recommended Test Equipment. Introduction. Power and Load Connections. Reference Design. Quick Start Evaluation
APPLICATION NOTE Embedded ACPI Compliant DDR AN1056 Rev 0.00 Introduction The ISL6532A provides a complete ACPI compliant power solution for dual channel DDRI and DDRII Memory systems. Included are both
RJH60F7BDPQ-A0. Preliminary Datasheet. 600V - 50A - IGBT High Speed Power Switching. Features. Outline. Absolute Maximum Ratings
RJH6F7BDPQ-A 6V - 5A - IGBT High Speed Power Switching Datasheet R7DS677EJ2 Rev.2. Nov 2, 24 Features Low collector to emitter saturation voltage V CE(sat) =.35 V typ. (at I C = 5 A, V GE = 5 V, Tj = 25
RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA)
7V - 3A - Triac Medium Power Use R7DS963EJ11 Rev.1.1 Features I T (RMS) : 3 A V DRM : 8 V (Tj = 125 C) Tj: 15 C I FGTI, I RGTI, I RGT III: 3 ma Insulated Type Planar Passivation Type Viso: V Outline RENESAS
USER S MANUAL ISL8011EVAL1Z. Features. Ordering Information. Applications. Pinout. 1.2A Integrated FETs, High Efficiency Synchronous Buck Regulator
USER S MANUAL ISL80EVALZ.A Integrated FETs, High Efficiency Synchronous Buck Regulator AN9 Rev 0.00 ISL80 is an integrated FET,.A synchronous buck regulator for general purpose point-of load applications.
SECONDARY PROTECTION F 100V PROTECTION RESISTORS AND FUSE 0.1 F 100V 100V RFI CAPS FIGURE 1. BASIC PROTECTION CIRCUIT
APPLICATION NOTE Implementing Tip and Ring Protection Circuitry Introduction A very important segment of the design of telecommunications equipment is proving adequate surge protection circuitry for the
Absolute Maximum Ratings (Tc = 25 C)
Datasheet RJP3HDPD Silicon N Channel IGBT High speed power switching R7DS465EJ2 Rev.2. Jun 5, 2 Features Trench gate and thin wafer technology (G6H-II series) High speed switching: t r = 8 ns typ., t f
USER S MANUAL. The Need for Testing Transient Load Response of POL (Point of Load) Regulators. Limitations of Commercially Available Electronic Loads
USER S MANUAL ISL800MEVALPHZ Using the Transient Load Generator on the ISL800M -Phase Power Module Evaluation Board AN76 Rev 0.00 January 6, 0 The Need for Testing Transient Load Response of POL (Point
1. Operating Modes Half-Duplex Configuration Circuit Schematics Revision History... 5
COMM INFOMTI S-232/S-485 Transceivers esigning a 3-Wire, Half-uplex, ual Protocol Interface Using the ISL3330 and ISL3331 T513 ev.1.00 bstract The ISL3330 and ISL331 are dual protocol (S-232/S-485) transceivers
USER S MANUAL ISL6841EVAL3Z. Target Design Specifications. Topology Selection. Typical Performance Characteristics. Waveforms
USER S MANUAL ISL6841EVAL3Z Evaluation Board for General Purpose Industrial Applications AN1384 Rev 0.00 The ISL684x family of devices are superior performing pin compatible replacements for the industry
RBN75H125S1FP4-A0. Preliminary Data Sheet. 1250V - 75A - IGBT Application: Uninterruptible Power Supply. Features. Outline. Absolute Maximum Ratings
1250V - 75A - IGBT Application: Uninterruptible Power Supply Data Sheet R07DS1382EJ0004 Rev.0.04 Features Low collector to emitter saturation voltage V CE(sat) = 1.8 V typ. (at I C = 75 A, V GE = 15 V,
APPLICATION NOTE. Linear Arrays Have Advantages Over Discrete Transistors. What Comprises A Linear Array
ALICATIO OTE RF Up/Down Conversion Is Simplified A Rev.00 un 00 Linear Arrays Have Advantages Over Discrete Transistors Discrete transistors have been used to build RF up/down converters in the past because
Absolute Maximum Ratings (Ta = 25 C)
RJP63K2DPP-M Silicon N Channel IGBT High Speed Power Switching Datasheet R7DS468EJ2 Rev.2. Jun 5, 2 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage:
60 Co irradiator located in the Palm Bay, Florida Intersil facility TABLE 1. ISL72813SEH PINOUT
TEST REPORT TR040 Rev 0 Introduction This report provides results of low dose rate and high dose rate, Total Ionizing Dose (TID) testing of the, a high-voltage, high-current driver. The tests were conducted
DATASHEET ISL70024SEH, ISL73024SEH. Features. Related Literature. Applications. 200V, 7.5A Enhancement Mode GaN Power Transistor
DATASHEET ISL724SEH, ISL7324SEH 2V, 7.5A Enhancement Mode GaN Power Transistor FN8976 Rev. 3. The ISL724SEH and ISL7324SEH are 2V N-channel enhancement mode GaN power transistors. These GaN FETs have been
NP90N04VUK. Preliminary Data Sheet MOS FIELD EFFECT TRANSISTOR. Description. Features. Ordering Information. Absolute Maximum Ratings (TA = 25 C)
NP9NVUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R7DS577EJ Rev.. May, 8 Description The NP9NVUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
1 2 3 E. Note1. Note1
Datasheet RJH6TDPQ-A 6V - 3A - IGBT Application:Current resonance circuit R7DS9EJ2 Rev.2. Apr 2, 2 Features Optimized for current resonance application Low collector to emitter saturation voltage V CE(sat)
APPLICATION NOTE ISL Abstract. 1. Advanced Calibration Process. 1.1 Advanced Calibration Registers
APPLICATION NOTE ISL29501 Temperature and Ambient Light Error Correction AN1984 Rev.0.00 Abstract The ISL29501 has the ability to perform real time correction of distance measurements due to changing temperature
CR12LM-12B. Preliminary Datasheet. Thyristor. Medium Power Use. Features. Outline. Applications. Maximum Ratings. R07DS0213EJ0100 Rev.1.
Thyristor Medium Power Use Datasheet R7DS213EJ1 Rev.1. Features I T (AV) : 12 A V DRM : 6 V I GT : 3 ma Viso : 1 V The product guaranteed maximum junction temperature of 15 C Insulated Type Planar Passivation
APPLICATION NOTE. Abstract. Table of Contents. List of Figures. ISL29501 Layout Design Guide. AN1917 Rev 0.00 Page 1 of 6.
APPLICATION NOTE ISL29501 Layout Design Guide AN1917 Rev 0.00 Abstract This document discusses best practices for board layout design for the ISL29501. Design goals are laid out for critical parameters
APPLICATION NOTE. RS-422 vs RS-485. Abstract. Contents. List of Figures. Similarities and Key Differences
PPLICTION NOTE S-422 vs S-485 N1989 ev.0.00 bstract The S-422 and S-485 standards specify the physical characteristics of driver and receiver components for differential data transmission interfaces in
USER S MANUAL ISL8112EVAL1Z. Recommended Equipment. Evaluation Board Setup Procedure. Quick Start. Evaluating the Other Output Voltage
USER S MANUAL ISLEVALZ Evaluation Board Setup Procedure The ISL is a dual-output Synchronous Buck controller with A integrated driver. It features high light load efficiency which is especially preferred
RJH1CF7RDPQ-80. Preliminary Datasheet. Silicon N Channel IGBT High Speed Power Switching. Features. Outline. Absolute Maximum Ratings
RJHCF7RDPQ-8 Silicon N Channel IGBT High Speed Power Switching Datasheet R7DS357EJ Rev.. May 2, 2 Features Voltage resonance circuit use Reverse conducting IGBT with monolithic body diode High efficiency
2SK975. Preliminary Datasheet. Silicon N Channel MOS FET. Application. Features. Outline. Absolute Maximum Ratings
Silicon N Channel MOS FET Datasheet R7DS44EJ (Previous: REJG9-) Rev.. Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can
Item Symbol Ratings Unit Collector to emitter voltage V CES 600 V Gate to emitter voltage V GES ±30 V Collector current. Note1.
2 3 RJP6FDPM 6 V - 25 A - IGBT High Speed Power Switching Datasheet R7DS585EJ Rev.. Features Low collector to emitter saturation voltage V CE(sat) =.4 V typ. (at I C = 25 A, V GE = 5 V, ) Trench gate and
APPLICATION NOTE. 100V DC Stable High Switch. Variable Pulse Width Variable Frequency Pulse Generator. CMOS Applications Information
APPLICATION NOTE CMOS Applications Information Variable Pulse Width Variable Frequency Pulse Generator This application uses the B driver of the EL7972 as an oscillator to drive the A driver. The frequency
RJK1054DPB. Preliminary Datasheet. 100V, 20A, 22m max. Silicon N Channel Power MOS FET Power Switching. Features. Outline. Absolute Maximum Ratings
V, A, 22m max. Silicon N Channel Power MOS FET Power Switching Features High speed switching Low drive current Low on-resistance R DS(on) = 7 m typ. (at V GS = V) Pb-free Halogen-free High density mounting
Washing machine, electric fan, air cleaner, other general purpose control applications
7V-.8A-Triac Low Power Use Features I T (RMS) :.8 A V DRM :7 V I FGTI, I RGTI, I RGTIII : 5 ma Planar Passivation Type Surface Mounted Type Completed Pb Free Datasheet R7DS258EJ3 Rev.3. Outline RENESAS
RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA)
7V - 16A - Triac Medium Power Use R7DS1189EJ4 Rev.4. Features I T (RMS) : 16 A V DRM : 8 V (Tj=125 C) Tj: 15 C I FGTI, I RGTI, I RGT III:3 ma(2ma) Note6 Insulated Type Planar Passivation Type Viso: 2V
SHUNT LOAD LOAD CURRENT SENSE CIRCUITRY FIGURE 1. SIMPLIFIED BLOCK DIAGRAM FIGURE 2. ISL28006 HIGHLY INTEGRATED AND ACCURATE CURRENT SENSE AMPLIFIER
APPLICATION NOTE ISL28006, ISL28133, ISL28134, ISL28191 HighSide, High Current Sensing Introduction There is a need in many applications to sense currents on the highside rail of a power bus and translate
HD74LV1GW16ACME W J. Data Sheet. Dual Buffer. Description. Features. Outline and Article Indication. Function Table. R04DS0032EJ0300 Rev.3.
HD74V1GW16 Dual Buffer Data Sheet R04DS0032EJ0300 Rev.3.00 Description The HD74V1GW16 has dual buffer in a 6 pin package. ow voltage and high-speed operation is suitable for the battery powered products
1. Basis of Mutual capacitance method Outline Renesas mutual capacitance method... 2
Introduction APPLICATION NOTE The RX113 group has incorporated hardware (Capacitive Touch Sensor Unit; CTSU) that detects human body contact by measuring capacitance existed between touch electrode and
RQK0203SGDQA. Preliminary Datasheet. Silicon N Channel MOS FET Power Switching. Features. Outline. Absolute Maximum Ratings. R07DS0303EJ0500 Rev.5.
Datasheet RQK3SGDQ Silicon N Channel MOS FET Power Switching R7DS33EJ5 Rev.5. Jan, Features Low on-resistance R DS(on) = 68 mω typ (V GS =.5 V, I D =.5 ) Low drive current High speed switching.5 V gate
RJK03M5DNS. Preliminary Datasheet. Silicon N Channel Power MOS FET Power Switching. Features. Outline. Absolute Maximum Ratings
RJK3M5DNS Silicon N Channel Power MOS FET Power Switching Datasheet R7DS769EJ11 Rev.1.1 May 29, Features High speed switching Capable of.5 V gate drive Low drive current High density mounting Low on-resistance
RJK0653DPB. Preliminary Datasheet. 60V, 45A, 4.8m max. Silicon N Channel Power MOS FET Power Switching. Features. Outline.
RJK653DPB 6V, 45A, 4.8m max. Silicon N Channel Power MOS FET Power Switching Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Datasheet Low on-resistance