USER S MANUAL. ISL284xxEVAL1Z. Introduction. Reference Documents. Evaluation Board Key Features. Amplifier Configuration (Figure 2)
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1 USER S MANUAL Evaluation Board User Guide AN9 Rev. Introduction The evaluation board is a design platform containing all the circuitry needed to characterize critical performance parameters of the ISL87 quad instrumentation amplifier using a variety of user defined test circuits. The ISL8xx are quad operational amplifiers featuring low noise, low distortion, and rail-to-rail output drive capability. They are designed to operate with single and dual supplies from +VDC (±.VDC) down to +.VDC (±.VDC). supply operation, the V - and GND pins are tied together to the power supply negative terminal. For split supplies +V and V - terminals connect to their respective power supply terminals. De-coupling capacitors C and C, connect to GND through R and R, resistors. Resistors R and R are but can be changed by the user to provide additional power supply filtering, or to reduce the voltage rate-of-rise to less than ±V/µs. Anti-reverse diodes D and D protect the circuit in the case of accidental polarity reversal. J J V- V+ J Reference Documents ISL876 Data Sheet, FN6 C D R R C D ISL878 Data Sheet, FN69 ISL886 Data Sheet, FN6 ISL888 Data Sheet, FN69 Evaluation Board Key Features C R7 C.UF FIGURE. POWER SUPPLY CIRCUIT R8 The is designed to enable the IC to operate from a single supply (+.VDC to +VDC), or from split supplies (±.VDC to ±/V). The board is configured for independent op amps connected for differential input with a closed loop gain of. A single external reference voltage (VREF) pin and provisions for a user-selectable voltage divider (filter is included). Power Supplies (Figure ) External power connections are made through the V +, V - and GND connections on the evaluation board. For single Amplifier Configuration (Figure ) The schematic of each of the op amps with the components supplied is shown in Figure. The circuit implements a differential input-amp with a closed loop gain of. The circuit can operate from a single.vdc to +VDC supply, or from dual supplies from ±.VDC to ±.VDC. The VREF pin can be connected to ground to establish a ground referenced input for split supply operation, or can be externally set to any reference level for single supply operation. RF / ISL8xx VCM IN+ IN(A,B,C,D)+ VREF IN+ IN(A,B,C,D)- R k RIN+ k RREF(A,B,C,D)+ k k V+ V- TO OTHER CHANNELS k V(x) VREF GND k FIGURE. BASIC AMPLIFIER CONFIGURATION AN9 Rev. Page of
2 User-selectable Options (Figure ) Component pads are included to enable a variety of user-selectable circuits to be added to the amplifier inputs, the VREF input, and the amplifier feedback loops. A voltage divider and filter option can be added to establish a power supply-tracking common mode reference at the VREF input. The inverting and non-inverting inputs have additional resistor placements for adding input attenuation, or to establish input DC offsets through the VREF pin.. J R R REF RREF K C R A K C6 R8 IN(A,B,C,D)- J R R6 R R IN(A,B,C,D)+ J6 R K C7 R K R R FIGURE. COMPONENT-SELECTABLE OPTIONS Components Parts List DEVICE NUMBER DESCRIPTION COMMENTS C, C, C CAP-TANTALUM, SMD, D,.7µF, V, % LOW ESR, ROHS Power Supply Decoupling C, C CAP, SMD, 6,.µF, V, %, X7R, ROHS Power Supply Decoupling C6-C CAP, SMD, 6, -PLACE HOLDER, ROHS User selectable capacitors - not populated D, D DIODE-RECTIFIER, SMD, SOD-, P, V,.A, ROHS Reverse Power Protection U (ISL876EVALZ) U (ISL878EVALZ) U (ISL886EVALZ) U (ISL888EVALZ) R-R, R-R, R-R, R, R6, R8, R, R, R, R8, R, R, R6, R-R8, R9-R6 R6, R8, R, R, R7, R9, R6, R, R-R, R6-R66 R, R7, R9, R, R6, R8, R, R, R, R67-R7 R, R7, R9, R9, R, R7, R9, R ISL876FAZ, IC-RAIL-TO-RAIL PRECISION OP AMP, 6P, QSOP, ROHS ISL878FAZ, IC-RAIL-TO-RAIL PRECISION OP AMP, 6P, QSOP, ROHS ISL886FAZ, IC-RAIL-TO-RAIL PRECISION OP AMP, 6P, QSOP, ROHS ISL888FAZ, IC-RAIL-TO-RAIL PRECISION OP AMP, 6P, QSOP, ROHS RESISTOR, SMD, 6,.%, MF, -PLACE HOLDER RES, SMD, 6,, /6W,TF, ROHS RES, SMD, 6, k, /W, %, TF, ROHS RES, SMD, 6, k, /W, %, TF, ROHS User selectable resistors - not populated user selectable resistors RG gain resistors RF gain resistors R, R, R7, R, R8 RES, SMD, 8,, /8W, TF, ROHS user selectable resistors AN9 Rev. Page of
3 ISL8xxEVALZ Top View AN9 Rev. Page of
4 ISL8XXEVALZ Schematic Diagram A IN+ B IN+ C IN+ R R R A RREF CLOSE TO PART CLOSE TO PART C.UF C R6 R7 R7 R7 B R K C D R9 R9 J R IN+ K K K C R9 C IN+C R K IN+D R7 R69 R68 R67 K K K K R6 K C8 IN+B R8 K R C C C C R R R9 D D J R6 R R6 J R R R8 R C C C R R9 R R R66 J6 C R8 R6 C8 R9 R R6 J R6 C9 R7 R6 J9 J R R J7 J8 C R7 K C9 R8 R R R R U QSOP6 9 6 R R6 J R C R J C7 C6 R6 R6 R6 R K C6 R8 R R R R J K C7 R8 J J6 R C J C R R7 J C B D D IN+D IN+C C C R.UF K K A A R D K K K K K REF V- V+ IN+B B Generic Pack. 6 9 AN9 Rev. Page of
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RBN5H65TFPQ-A 65V - 5A - IGBT Power Switching Data Sheet R7DS38EJ Rev.. Jun 5, 28 Features Trench gate and thin wafer technology (G8H series) High speed switching Built in fast recovery diode in one package
2SB1691. Preliminary Datasheet. Silicon PNP Epitaxial Planer Low Frequency Power Amplifier. Features. Outline. Absolute Maximum Ratings
Silicon PNP Epitaxial Planer Low Frequency Power mplifier Datasheet R07DS0272EJ0400 Rev.4.00 Features Small size package: MPK (SC 59) Large Maximum current: I C = 1 Low collector to emitter saturation
Types of Ambient Light Sensors
APPLICATION NOTE Making Sense of Light Sensors AN1311 Rev 0.00 As electronics seamlessly weave their way into our lives, sensors play an increasingly important role. Light sensors are one of the simplest
NP45N06VDK is N-channel MOS Field Effect Transistor designed for high current switching applications.
NP45N6VDK 6 V 45 A N-channel Power MOS FET Application: Automotive Data Sheet R7DS295EJ2 Rev.2. May 24, 28 Description NP45N6VDK is N-channel MOS Field Effect Transistor designed for high current switching
Part Number Lead Plating Packing Package µpa502ct-t1-a/at -A : Sn-Bi, -AT : Pure Sn 3000p/Reel SC-74A (5pMM)
µpa52ct N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R7DS277EJ2 Rev.2. Jul 6, 25 Description The µpa52ct, N-channel vertical type MOSFET designed for general-purpose switch, is a device which
2SK E. Data Sheet. 1500V - 2A - MOS FET High Speed Power Switching. Features. Outline. Absolute Maximum Ratings. R07DS1275EJ0200 Rev.2.
SK5-8-E 5V - A - MOS FET High Speed Power Switching Data Sheet R7DS75EJ Rev.. Features High breakdown voltage (V DSS = 5 V) High speed switching Low drive current Outline RENESAS Package code: PRSSZD-A
TABLE 1. OVERALL SEE TEST RESULTS (Note 1) TEST ±1% < SET < ±4% SET > ±5% TEMP (ºC) LET (Note 5) UNITS REMARKS SEB/L (Notes 2, 3)
TEST REPORT ISL75051SRH SEE Testing: Summary and Conclusions Single Event Burnout/Latch-up No Single Event Burnout (SEB) was observed for the device up to an LET value of 86 MeV.cm 2 /mg (+125 C). No Single
RAA is designed for 2Wheeler Flasher driver with double frequency flashing in low load current condition.
INTELLIGENT POWER DEVICE Datasheet R07DS1342EJ0101 Rev.1.01 1. Overview 1.1 Description RAA290003 is designed for 2Wheeler Flasher driver with double frequency flashing in low load current condition. 1.2
1. Operating Modes Half-Duplex Configuration Circuit Schematics Revision History... 5
COMM INFOMTI S-232/S-485 Transceivers esigning a 3-Wire, Half-uplex, ual Protocol Interface Using the ISL3330 and ISL3331 T513 ev.1.00 bstract The ISL3330 and ISL331 are dual protocol (S-232/S-485) transceivers
SECONDARY PROTECTION F 100V PROTECTION RESISTORS AND FUSE 0.1 F 100V 100V RFI CAPS FIGURE 1. BASIC PROTECTION CIRCUIT
APPLICATION NOTE Implementing Tip and Ring Protection Circuitry Introduction A very important segment of the design of telecommunications equipment is proving adequate surge protection circuitry for the
USER S MANUAL. The Need for Testing Transient Load Response of POL (Point of Load) Regulators. Limitations of Commercially Available Electronic Loads
USER S MANUAL ISL800MEVALPHZ Using the Transient Load Generator on the ISL800M -Phase Power Module Evaluation Board AN76 Rev 0.00 January 6, 0 The Need for Testing Transient Load Response of POL (Point
APPLICATION NOTE. Recommended Test Equipment. Introduction. Power and Load Connections. Reference Design. Quick Start Evaluation
APPLICATION NOTE Embedded ACPI Compliant DDR AN1056 Rev 0.00 Introduction The ISL6532A provides a complete ACPI compliant power solution for dual channel DDRI and DDRII Memory systems. Included are both
RJP4301APP-M0. Preliminary Datasheet. Nch IGBT for Strobe Flash. Features. Outline. Applications. Maximum Ratings. R07DS0749EJ0100 Rev.1.
Nch IGBT for Strobe Flash Datasheet R07DS0749EJ0100 Rev.1.00 Features V CES : 430 V TO-220FL package High Speed Switching Outline RENESAS Package code: PRSS0003AF-A) (Package name: TO-220FL) 2 1 1 : Gate
RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA)
7V - 3A - Triac Medium Power Use R7DS963EJ11 Rev.1.1 Features I T (RMS) : 3 A V DRM : 8 V (Tj = 125 C) Tj: 15 C I FGTI, I RGTI, I RGT III: 3 ma Insulated Type Planar Passivation Type Viso: V Outline RENESAS
SHUNT LOAD LOAD CURRENT SENSE CIRCUITRY FIGURE 1. SIMPLIFIED BLOCK DIAGRAM FIGURE 2. ISL28006 HIGHLY INTEGRATED AND ACCURATE CURRENT SENSE AMPLIFIER
APPLICATION NOTE ISL28006, ISL28133, ISL28134, ISL28191 HighSide, High Current Sensing Introduction There is a need in many applications to sense currents on the highside rail of a power bus and translate
APPLICATION NOTE. Abstract. Table of Contents. List of Figures. ISL29501 Sand Tiger Optics Application Note. AN1966 Rev 0.00 Page 1 of 6.
APPLICATION NOTE ISL29501 Sand Tiger Optics AN1966 Rev 0.00 Abstract This application note describes important optical and opto-mechanical features of the ISL29501 Sand Tiger distance measurement system.
RJP65T54DPM-A0. Data Sheet. 650V - 30A - IGBT Application: Partial switching circuit. Features. Outline. Absolute Maximum Ratings
3 RJP65T54DPM-A 65V - 3A - IGBT Application: Partial switching circuit Data Sheet R7DS365EJ Rev.. Dec 9, 6 Features Low collector to emitter saturation voltage V CE(sat) =.35 V typ. (at I C = 3 A, V GE
USER S MANUAL ISL78010EVAL1Z. Reference Documents. Key Features. Recommended Equipment. Quick Setup Guide. Evaluation Board
USER S MANUAL Evaluation Board The evaluation board is used to demonstrate the performance of the ISL78010 IC used for automotive grade TFT-LCD power supply solution. The top side and the bottom side of
RJH60F7BDPQ-A0. Preliminary Datasheet. 600V - 50A - IGBT High Speed Power Switching. Features. Outline. Absolute Maximum Ratings
RJH6F7BDPQ-A 6V - 5A - IGBT High Speed Power Switching Datasheet R7DS677EJ2 Rev.2. Nov 2, 24 Features Low collector to emitter saturation voltage V CE(sat) =.35 V typ. (at I C = 5 A, V GE = 5 V, Tj = 25
APPLICATION NOTE. Making Accurate Voltage Noise and Current Noise Measurements on Operational Amplifiers Down to 0.1Hz. Abstract
APPLICATION NOTE Making Accurate Voltage Noise and Current Noise Measurements on Operational Amplifiers Down to 0.1Hz AN1560 Rev.1.00 Jan 11, 011 Abstract Making accurate voltage and current noise measurements
RBN75H125S1FP4-A0. Preliminary Data Sheet. 1250V - 75A - IGBT Application: Uninterruptible Power Supply. Features. Outline. Absolute Maximum Ratings
1250V - 75A - IGBT Application: Uninterruptible Power Supply Data Sheet R07DS1382EJ0004 Rev.0.04 Features Low collector to emitter saturation voltage V CE(sat) = 1.8 V typ. (at I C = 75 A, V GE = 15 V,
APPLICATION NOTE ISL Abstract. 1. Advanced Calibration Process. 1.1 Advanced Calibration Registers
APPLICATION NOTE ISL29501 Temperature and Ambient Light Error Correction AN1984 Rev.0.00 Abstract The ISL29501 has the ability to perform real time correction of distance measurements due to changing temperature
RMLV0808BGSB - 4S2. 8Mb Advanced LPSRAM (1024k word 8bit) Description. Features. Part Name Information. R10DS0232EJ0200 Rev
8Mb Advanced LPSRAM (1024k word 8bit) Description The RMLV0808BGSB is a family of 8-Mbit static RAMs organized 1,048,576-word 8-bit, fabricated by Renesas s high-performance Advanced LPSRAM technologies.
Absolute Maximum Ratings (Tc = 25 C)
Datasheet RJP3HDPD Silicon N Channel IGBT High speed power switching R7DS465EJ2 Rev.2. Jun 5, 2 Features Trench gate and thin wafer technology (G6H-II series) High speed switching: t r = 8 ns typ., t f
DATASHEET ISL70024SEH, ISL73024SEH. Features. Related Literature. Applications. 200V, 7.5A Enhancement Mode GaN Power Transistor
DATASHEET ISL724SEH, ISL7324SEH 2V, 7.5A Enhancement Mode GaN Power Transistor FN8976 Rev. 3. The ISL724SEH and ISL7324SEH are 2V N-channel enhancement mode GaN power transistors. These GaN FETs have been
APPLICATION NOTE. Linear Arrays Have Advantages Over Discrete Transistors. What Comprises A Linear Array
ALICATIO OTE RF Up/Down Conversion Is Simplified A Rev.00 un 00 Linear Arrays Have Advantages Over Discrete Transistors Discrete transistors have been used to build RF up/down converters in the past because
Absolute Maximum Ratings (Ta = 25 C)
RJP63K2DPP-M Silicon N Channel IGBT High Speed Power Switching Datasheet R7DS468EJ2 Rev.2. Jun 5, 2 Features Trench gate and thin wafer technology (G6H-II series) Low collector to emitter saturation voltage:
R 39, R 47, R 49, R 50 IN-A. 100kΩ IN-B 6 2 IN-C V+ IN-D IN+A IN+B 5 3 IN+C IN+D 12 ISL71444MVZ 11 V- R kΩ R 33 OPEN
USER S MANUAL ISL7MEVALZ Evaluation Board Introduction The ISL7MEVALZ evaluation platform is designed to evaluate the ISL7M. The ISL7M contains four high speed and low power op amps designed to take advantage
Switching of all types of 14 V DC grounded loads, such as inductor, resistor and capacitor
Data Sheet mpd166036gr INTELLIGENT POWER DEVICE R07DS1118EJ0200 Rev.2.00 Description The mpd166036 is an N-channel high side driver with built-in charge pump and embedded protection function. It is also
USER S MANUAL ISL6406EVAL1, ISL6406EVAL2, ISL6406EVAL3. Quick Start Evaluation. Introduction. Recommended Test Equipment. Power and Load Connections
USER S MANUAL ISL6406EVAL1, ISL6406EVAL2, ISL6406EVAL3 PWM Controller Evaluation Boards AN1031 Rev 1.00 Introduction The ISL6406, ISL6426 is a highly efficient, adjustable frequency, synchronous buck switching
NP90N04VUK. Preliminary Data Sheet MOS FIELD EFFECT TRANSISTOR. Description. Features. Ordering Information. Absolute Maximum Ratings (TA = 25 C)
NP9NVUK MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R7DS577EJ Rev.. May, 8 Description The NP9NVUK is N-channel MOS Field Effect Transistor designed for high current switching applications. Features
CR12LM-12B. Preliminary Datasheet. Thyristor. Medium Power Use. Features. Outline. Applications. Maximum Ratings. R07DS0213EJ0100 Rev.1.
Thyristor Medium Power Use Datasheet R7DS213EJ1 Rev.1. Features I T (AV) : 12 A V DRM : 6 V I GT : 3 ma Viso : 1 V The product guaranteed maximum junction temperature of 15 C Insulated Type Planar Passivation
60 Co irradiator located in the Palm Bay, Florida Intersil facility TABLE 1. ISL72813SEH PINOUT
TEST REPORT TR040 Rev 0 Introduction This report provides results of low dose rate and high dose rate, Total Ionizing Dose (TID) testing of the, a high-voltage, high-current driver. The tests were conducted
V C = V BP - V BP /[A 1 *A 2 ] -V R /A 1. where V BP is the average back porch voltage for the sample period. V 1 = V IN - V BP + V R /A 1.
![V C = V BP - V BP /[A 1 *A 2 ] -V R /A 1. where V BP is the average back porch voltage for the sample period. V 1 = V IN - V BP + V R /A 1.](/thumbs/77/75390112.jpg "V C = V BP - V BP /[A 1 *A 2 ] -V R /A 1. where V BP is the average back porch voltage for the sample period. V 1 = V IN - V BP + V R /A 1.")
APPLICATION NOTE DC Restored 100MHz Current AN1086 Rev 0.00 The EL2090 is an extremely versatile video amplifier with an integral on-board DC loop amplifier and sample-hold control circuitry. It is the
APPLICATION NOTE. Abstract. Table of Contents. List of Figures. ISL29501 Layout Design Guide. AN1917 Rev 0.00 Page 1 of 6.
APPLICATION NOTE ISL29501 Layout Design Guide AN1917 Rev 0.00 Abstract This document discusses best practices for board layout design for the ISL29501. Design goals are laid out for critical parameters
RQK0203SGDQA. Preliminary Datasheet. Silicon N Channel MOS FET Power Switching. Features. Outline. Absolute Maximum Ratings. R07DS0303EJ0500 Rev.5.
Datasheet RQK3SGDQ Silicon N Channel MOS FET Power Switching R7DS33EJ5 Rev.5. Jan, Features Low on-resistance R DS(on) = 68 mω typ (V GS =.5 V, I D =.5 ) Low drive current High speed switching.5 V gate
TEST REPORT. Introduction. Test Description. Part Description. Results ISL70444SEH. Irradiation Facility. Characterization Equipment
TEST REPORT ISL7444SEH TR8 Rev. July 6, 215 Introduction This report summarizes results of 1MeV equivalent neutron testing of the ISL7444SEH quad operational amplifier (op amp). The test was conducted
1 2 3 E. Note1. Note1
Datasheet RJH6TDPQ-A 6V - 3A - IGBT Application:Current resonance circuit R7DS9EJ2 Rev.2. Apr 2, 2 Features Optimized for current resonance application Low collector to emitter saturation voltage V CE(sat)
APPLICATION NOTE. RS-422 vs RS-485. Abstract. Contents. List of Figures. Similarities and Key Differences
PPLICTION NOTE S-422 vs S-485 N1989 ev.0.00 bstract The S-422 and S-485 standards specify the physical characteristics of driver and receiver components for differential data transmission interfaces in
2SK975. Preliminary Datasheet. Silicon N Channel MOS FET. Application. Features. Outline. Absolute Maximum Ratings
Silicon N Channel MOS FET Datasheet R7DS44EJ (Previous: REJG9-) Rev.. Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device Can
1. SCHEMATIC OF INVERTING OP AMP
APPLICATION NOTE Evaluation Programs for SPICE AN952 Rev.. Introduction There is no consistent method for evaluating SPICE models in the industry, so it is hard to reproduce a specific manufacturer s results
RENESAS Package code: PRSS0003AP-A (Package name: TO-220FPA)
7V - 16A - Triac Medium Power Use R7DS1189EJ4 Rev.4. Features I T (RMS) : 16 A V DRM : 8 V (Tj=125 C) Tj: 15 C I FGTI, I RGTI, I RGT III:3 ma(2ma) Note6 Insulated Type Planar Passivation Type Viso: 2V
APPLICATION NOTE. Introduction: IEEE Standard Test Access Port and Boundary Scan Register for the ISL5216 (QPDC) AN9987 Rev 1.
APPLICATION NOTE IEEE Standard Test Access Port and Boundary Scan Register for the ISL5216 (PC) AN9987 Rev 1.00 Introduction: The test access port (TAP) provided on the ISL5216 is compliant with the IEEE