VNB14NV04 / VND14NV04 / VND14NV04-1/ VNP14NV04/ VNS14NV04

Transcription

1 VNB4NV4 / VND4NV4 / VND4NV4-/ VNP4NV4/ VNS4NV4 OMNIFET II : FULLY AUTOPROTECTED POWER MOSFET TYPE R DS(on) I lim V clamp VNB4NV4 VND4NV4 VND4NV4- VNP4NV4 VNS4NV4 35 mω A 4 V 3 TO-5 (DPAK) SO-8 LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION INTEGRATED CLAMP LOW CURRENT DRAWN FROM INPUT PIN DIAGNOSTIC FEEDBACK THROUGH INPUT PIN ESD PROTECTION DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET DESCRIPTION The VNB4NV4, VND4NV4, VND4NV4-, VNP4NV4, VNS4NV4, are monolithic devices designed in STMicroelectronics VIPower M-3 Technology, intended for replacement of BLOCK DIAGRAM TO- 3 TO-5 (IPAK) standard Power MOSFETS from DC up to 5KHz applications.built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. 3 D PAK 3 ORDER CODES: D PAK VNB4NV4 TO-5 (DPAK) TO-5 (IPAK) VND4NV4 VND4NV4- TO- VNP4NV4 SO-8 VNS4NV4 DRAIN Overvoltage Clamp INPUT Gate Control Over Temperature Linear Current Limiter 3 SOURCE March /

2 ABSOLUTE MAXIMUM RATING Symbol Parameter Value SO-8 DPAK TO- IPAK D PAK Unit V DS Drain-source Voltage (V IN =V) Internally Clamped V V IN Input Voltage Internally Clamped V I IN Input Current +/- ma R IN MIN Minimum Input Series Impedance Ω I D Drain Current Internally Limited A I R Reverse DC Output Current -5 A V ESD Electrostatic Discharge (R=.5KΩ, C=pF) 4 V V ESD Electrostatic Discharge on output pin only (R=33Ω, C=5pF) 65 V P tot Total Dissipation at T c =5 C W T j Operating Junction Temperature Internally limited C T c Case Operating Temperature Internally limited C T stg Storage Temperature -55 to 5 C CONNECTION DIAGRAM (TOP VIEW) SO-8 Package (*) SOURCE SOURCE SOURCE INPUT DRAIN DRAIN DRAIN DRAIN (*) For the pins configuration related to DPAK, D PAK, IPAK, TO- see outlines at page. CURRENT AND VOLTAGE CONVENTIONS I D I IN R IN INPUT DRAIN V DS SOURCE V IN /

3 THERMAL DATA Symbol Parameter Value SO-8 DPAK TO- IPAK D PAK Unit R thj-case Thermal Resistance Junction-case MAX C/W R thj-lead Thermal Resistance Junction-lead MAX 5 C/W R thj-amb Thermal Resistance Junction-ambient MAX 65(*) 5.5(*) 5 5 (*) C/W (*)When mounted on a standard single-sided FR4 board with 5mm of Cu (at least 35 µm thick) connected to all DRAIN pins. Horizontal mounting and no artificial air flow. ELECTRICAL CHARACTERISTICS (-4 C <T j < 5 C, unless otherwise specified) OFF Symbol Parameter Test Conditions Min Typ Max Unit V CLAMP Drain-source Clamp Voltage V IN =V; I D =7A V V CLTH Drain-source Clamp Threshold Voltage V IN =V; I D =ma 36 V V INTH Input Threshold Voltage V DS =V IN ;I D =ma.5.5 V I ISS Supply Current from Input Pin V DS =V; V IN =5V 5 µa V INCL Input-Source Clamp I IN =ma Voltage I IN =-ma V I DSS Zero Input Voltage Drain V DS =3V; V IN =V; T j =5 C 3 Current (V IN =V) V DS =5V; V IN =V 75 µa ON Symbol Parameter Test Conditions Min Typ Max Unit Static Drain-source On V IN =5V; I D =7A; T j =5 C 35 R DS(on) mω Resistance V IN =5V; I D =7A 7 3/

4 ELECTRICAL CHARACTERISTICS (continued) (T j =5 C, unless otherwise specified) DYNAMIC Symbol Parameter Test Conditions Min Typ Max Unit g fs (*) Forward Transconductance V DD =3V; I D =7A 8 S C OSS Output Capacitance V DS =3V; f=mhz; V IN =V 4 pf SWITCHING Symbol Parameter Test Conditions Min Typ Max Unit t d(on) Turn-on Delay Time 8 5 ns V DD =5V; I D =7A t r Rise Time 35 ns V gen =5V; R gen =R IN MIN =Ω t d(off) Turn-off Delay Time ns (see figure ) t f Fall Time 5 5 ns t d(on) Turn-on Delay Time µs V DD =5V; I D =7A t r Rise Time µs V gen =5V; R gen =.KΩ t d(off) Turn-off Delay Time 9 5. µs (see figure ) t f Fall Time. 3. µs (di/dt) on Turn-on Current Slope V DD =5V; I D =7A V gen =5V; R gen =R IN MIN =Ω 6 A/µs Q i Total Input Charge V DD =V; I D =7A; V IN =5V; I gen =.3mA (see figure 5) 36.8 nc SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min Typ Max Unit V SD (*) Forward On Voltage I SD =7A; V IN =V.8 V t rr Reverse Recovery Time I SD =7A; di/dt=4a/µs 3 ns Q rr Reverse Recovery Charge V DD =3V; L=µH.8 µc I RRM Reverse Recovery Current (see test circuit, figure ) 5 A PROTECTIONS (-4 C<T j < 5 C, unless otherwise specified) Symbol Parameter Test Conditions Min Typ Max Unit I lim Drain Current Limit V IN =5V; V DS =3V 8 4 A t dlim Step Response Current Limit V IN =5V; V DS =3V 45 µs T jsh Overtemperature Shutdown 5 75 C T jrs Overtemperature Reset 35 C I gf Fault Sink Current V IN =5V; V DS =3V; T j =T jsh 5 ma E as starting T j =5 C; V DD =4V Single Pulse V IN = 5V; R gen =R IN MIN =Ω; L=4mH Avalanche Energy (see figures 3 & 4) 4 mj (*) Pulsed: Pulse duration = 3µs, duty cycle.5% 4/

5 PROTECTION FEATURES During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path. The device then behaves like a standard power MOSFET and can be used as a switch from DC up to 5KHz. The only difference from the user s standpoint is that a small DC current I ISS (typ. µa) flows into the INPUT pin in order to supply the internal circuitry. The device integrates: - OVERVOLTAGE CLAMP PROTECTION: internally set at 45V, along with the rugged avalanche characteristics of the Power MOSFET stage give this device unrivalled ruggedness and energy handling capability. This feature is mainly important when driving inductive loads. - LINEAR CURRENT LIMITER CIRCUIT: limits the drain current I D to I lim whatever the INPUT pin voltages. When the current limiter is active, the device operates in the linear region, so power dissipation may exceed the capability of the heatsink. Both case and junction temperatures increase, and if this phase lasts long enough, junction temperature may reach the overtemperature threshold T jsh. - OVERTEMPERATURE AND SHORT CIRCUIT PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the sensing element on the chip in the power stage area ensures fast, accurate detection of the junction temperature. Overtemperature cutout occurs in the range 5 to 9 C, a typical value being 7 C. The device is automatically restarted when the chip temperature falls of about 5 C below shut-down temperature. - STATUS FEEDBACK: in the case of an overtemperature fault condition (T j >T jsh ), the device tries to sink a diagnostic current I gf through the INPUT pin in order to indicate fault condition. If driven from a low impedance source, this current may be used in order to warn the control circuit of a device shutdown. If the drive impedance is high enough so that the INPUT pin driver is not able to supply the current I gf, the INPUT pin will fall to V. This will not however affect the device operation: no requirement is put on the current capability of the INPUT pin driver except to be able to supply the normal operation drive current I ISS. Additional features of this device are ESD protection according to the Human Body model and the ability to be driven from a TTL Logic circuit. 5/

6 Figure : Switching Time Test Circuit for Resistive Load V D V gen R gen I D 9% t r % V gen t d(on) td(off) t f t t Figure : Test Circuit for Diode Recovery Times D A A I OMNIFET FAST DIODE L=uH 5 Ω S B R gen I B OMNIFET D V DD V gen S 8.5 Ω 6/

7 Figure 3: Unclamped Inductive Load Test Circuits Figure 4: Unclamped Inductive Waveforms R GEN V IN P W Figure 5: Input Charge Test Circuit VIN GEN ND83 Thermal Impedance for DPAK/IPAK Thermal Impedance for TO- 7/

8 Source-Drain Diode Forward Characteristics Static Drain Source On Resistance Vsd (mv) Rds(on) (mohms) Vin=V 6 4 Vin=.5V Tj=-4ºC Tj=5ºC Tj=5ºC Id (A) Derating Curve Id(A) Static Drain-Source On resistance Vs. Input Voltage Rds(on) (mohms) Tj=5ºC 5 4 Tj=5ºC Id=A Id=A 3 Static Drain-Source On resistance Vs. Input Voltage Tj=-4ºC Transconductance Vin(V) Id=A Id=A Id=A Id=A Rds(on) (mohms) 8 Gfs (S) Id=7A 8 6 Vds=3V Tj=-4ºC Tj=5ºC Tj=5ºC 5 Tj=5ºC Tj=5ºC Tj= - 4ºC Vin(V) Id(A) 8/

9 Static Drain-Source On Resistance Vs. Id Transfer Characteristics Rds(on) (mohms) 7 Idon (A) Vin=5V Tj=5ºC 6 4 Vds=3.5V Tj=5ºC Tj=-4ºC 4 3 Tj=5ºC 8 6 Tj=5ºC 4 Tj=-4ºC Id(A) Turn On Current Slope Turn On Current Slope Vin (V) di/dt(a/us) Rg(ohm) Vin=5V Vdd=5V Id=7A di/dt(a/us) Rg(ohm) Vin=3.5V Vdd=5V Id=7A Input Voltage Vs. Input Charge Vin (V) Vds=V Id=7A Qg (nc) Turn off drain source voltage slope dv/dt(v/us) Rg(ohm) Vin=5V Vdd=5V Id=7A 9/

10 Turn Off Drain-Source Voltage Slope dv/dt(v/us) Rg(ohm) Switching Time Resistive Load Vin=3.5V Vdd=5V Id=7A Capacitance Variations C(pF) f=mhz Vin=V Vds(V) Switching Time Resistive Load t(us) Vdd=5V Id=7A Vin=5V tr tf td(off) t(ns) Vdd=5V Id=7A Rg=ohm td(on) Rg(ohm) Output Characteristics 75 td(off) 5 tr 5 tf td(on) Vin(V) Normalized On Resistance Vs. Temperature Id (A) 8 7 Vin=5V 6 5 Vin=4V 4 3 Vin=3V Vin=V Vds (V) Rds(on) (mohm) Vin=5V Id=7A Tc (ºC) /

11 Normalized Input Threshold Voltage Vs. Temperature Vinth (V) Current Limit Vs. Junction Temperature Ilim (A) Vds=Vin Id=mA 35 3 Vin=5V Vds=3V Tc (ºC) Step Response Current Limit Tc (ºC) Tdlim(us) Vin=5V Rg=ohm Vdd(V) /

12 TO-5 (IPAK) MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A A A B B B B5.3. B C C D E G H L L L H A C A3 A C L D L E = = B = = 3 G = = B3 B6 B B5 L /

13 D PAK MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A A A B B C C D D 8.35 E E G L L L M R.4.5 V º 8º 3/

14 TO-5 (DPAK) MECHANICAL DATA mm. DIM. MIN. TYP MAX. A..4 A.9. A.3.3 B.64.9 B C.45.6 C.48.6 D D 5. E E 4.7 e.8 G H L.8 L4.6. R. V 8 Package Weight Gr..9 P3P 4/

15 TO- MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A C D E F F F G G H L L L L L L M.6. DIA # % & / * KC & ) ) * ( 8 ( (. 5/

16 SO-8 MECHANICAL DATA DIM. mm. inch MIN. TYP MAX. MIN. TYP. MAX. A a a a b b C c 45 (typ.) D E e.7.5 e F L M.6.3 F 8 (max.) 6/

17 D PAK FOOTPRINT TUBE SHIPMENT (no suffix) All dimensions are in millimeters B A C Base Q.ty 5 Bulk Q.ty 5 Tube length (±.5) 53 A 6 B.3 C(±.).6 All dimensions are in mm. TAPE AND REEL SHIPMENT (suffix 3TR ) TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 48 rev. A, Feb 986 Tape width W 4 Tape Hole Spacing P (±.) 4 Component Spacing P 6 Hole Diameter D (±./-).5 Hole Diameter D (min).5 Hole Position F (±.5).5 Compartment Depth K (max) 6.5 Hole Spacing P (±.) REEL DIMENSIONS Base Q.ty Bulk Q.ty A (max) 33 B (min).5 C(±.) 3 F. G (+ / -) 4.4 N (min) 6 T (max) 3.4 All dimensions are in mm. All dimensions are in mm. End Start Top cover tape No components 5mm min Components Emptycomponents pockets saled with cover tape. User direction of feed No components 5mm min 7/

18 DPAK FOOTPRINT TUBE SHIPMENT (no suffix) B A C Base Q.ty 75 Bulk Q.ty 3 Tube length (±.5) 53 A 6 B.3 C(±.).6 All dimensions are in mm. TAPE AND REEL SHIPMENT (suffix 3TR ) REEL DIMENSIONS Base Q.ty 5 Bulk Q.ty 5 A (max) 33 B (min).5 C(±.) 3 F. G (+ / -) 6.4 N (min) 6 T (max).4 TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 48 rev. A, Feb 986 Tape width W 6 Tape Hole Spacing P (±.) 4 Component Spacing P 8 Hole Diameter D (±./-).5 Hole Diameter D (min).5 Hole Position F (±.5) 7.5 Compartment Depth K (max) 6.5 Hole Spacing P (±.) All dimensions are in mm. End Start Top cover tape No components 5mm min Components Emptycomponents pockets saled with cover tape. User direction of feed No components 5mm min 8/

19 SO-8 TUBE SHIPMENT (no suffix) B C A Base Q.ty Bulk Q.ty Tube length (±.5) 53 A 3. B 6 C(±.).6 All dimensions are in mm. TAPE AND REEL SHIPMENT (suffix 3TR ) REEL DIMENSIONS Base Q.ty 5 Bulk Q.ty 5 A (max) 33 B (min).5 C(±.) 3 F. G (+ / -).4 N (min) 6 T (max) 8.4 All dimensions are in mm. TAPE DIMENSIONS According to Electronic Industries Association (EIA) Standard 48 rev. A, Feb 986 Tape width W Tape Hole Spacing P (±.) 4 Component Spacing P 8 Hole Diameter D (±./-).5 Hole Diameter D (min).5 Hole Position F (±.5) 5.5 Compartment Depth K (max) 4.5 Hole Spacing P (±.) All dimensions are in mm. End Start Top cover tape No components 5mm min Components Emptycomponents pockets saled with cover tape. User direction of feed No components 5mm min 9/

20 TO- TUBE SHIPMENT (no suffix) A B Base Q.ty 5 Bulk Q.ty Tube length (±.5) 53 A 5.5 B 3.4 C(±.).75 All dimensions are in mm. C /

21 IPAK TUBE SHIPMENT (no suffix) A C B Base Q.ty 75 Bulk Q.ty 3 Tube length (±.5) 53 A 6 B.3 C(±.).6 All dimensions are in mm. MECHANICAL POLARIZATION /

22 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics STMicroelectronics - Printed in ITALY- All Rights Reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. /

23 This datasheet has been download from: Datasheets for electronics components.