TEA2025B TEA2025D STEREO AUDIO AMPLIFIER

Transcription

1 TEA05B TEA05D STEREO AUDIO AMPLIFIER DUAL OR BRIDGE CONNECTION MODES FEW EXTERNAL COMPONENTS SUPPLY VOLTAGE DOWN TO 3V HIGH CHANNEL SEPARATION VERY LOW SWITCH ON/OFF NOISE MAX GAIN OF 45dB WITH ADJUST EXTER- NAL RESISTOR SOFT CLIPPING THERMAL PROTECTION 3V < V CC < 5V P= W, VCC =, RL =4Ω P=.3W, VCC = 9V, RL =4Ω P= 0.W, V CC = 3V, R L =4Ω ABSOLUTE MAXIMUM RATINGS POWERDIP ++ SO0 (+4+4) ORDERING NUMBERS: TEA05B (PDIP) TEA05D (SO) DESCRIPTION The TEA05B/D is a monolithic integrated circuit in ++ Powerdip and +4+4 SO, intended for use as dual or bridge power audio amplifier portable radio cassette players. Symbol Parameter Test Conditions Unit V S Supply Voltage 5 V IO Ouput Peak Current.5 A TJ Junction Temperature 50 C T stg Storage Temperature 50 C BLOCK DIAGRAM (Sub) IN + FEED BOOT OUT THERMAL PROTECT. 50Ω 0KΩ START CIRCUIT - + 5KΩ SVR DECOUPLING V S+ BRIDGE IN KΩ 50Ω 50Ω D94AU0 FEED BOOT OUT June 994 /9

2 POWERDIP ++ PIN CONNECTION (Top view) BRIDGE 6 +Vs OUT. 5 OUT. BOOT. 3 4 BOOT FEEDBACK 6 FEEDBACK IN. (+) 7 0 IN. (+) SVR 8 9 (sub.) SO +4+4 PIN CONNECTION (Top view) BRIDGE OUT BOOT V CC OUT BOOT FEEDBACK 8 3 FEEDBACK IN (+) 9 IN (+) SVR 0 (Sub) D94AU9 5 4 THERMAL DATA Symbol Description SO +4+4 (*) PDIP ++ (**) Unit R th j-case R th j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient (*) The R th j-amb is measured with 4sq cm copper area heatsink Max Max C/W C/W (**) The Rth j-amb is measured on devices bonded on a 0 x 5 x 0.5cm glass-epoxy substrate with a 35µm thick copper surface of 5 cm. /9

3 ELECTRICAL CHARACTERISTICS (Tamb = 5 C, VCC = 9V, Stereo unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit V S Supply Voltage 3 V IQ Quiescent Current ma V O Quiescent Output Voltage 4.5 V AV Voltage Gain Stereo Bridge AV Voltage Gain Difference ± db R j Input Impedance 30 KΩ PO Output Power (d = 0%) Stereo 8 (per channel) 9V 9V 3V 3V V Bridge d Distortion Vs = 9V; R L =4Ω 9V 3V 3V Stereo Bridge SVR Supply Voltage Rejection f = 00Hz, VR = 0.5V, Rg = db R E N ( IN ) Input Noise Voltage G =0.5 3 RG=04Ω 3 6 mv CT Cross-Talk f = KHz, R g = 0KΩ 40 5 db 4Ω 8Ω 4Ω 8Ω 6Ω 3Ω 4Ω 3Ω 8Ω 8Ω 4Ω 8Ω 6Ω 3Ω db W W % Term. N (PDIP) DC VOLT (V) Figure : Bridge Application (Powerdip) Figure : Stereo Application (Powerdip) C0 C C4 C6 C C C8 C5 C7 C9 C3 3/9

4 Figure 3: Supply Current vs. Supply Voltage (R L =4Ω) I(mA) Vs(V) STEREO Figure 4: Output Voltage vs. Supply Voltage Vo(V) Vs(V) STEREO Figure 5: Output Power vs. Supply Voltage (THD = 0%, f = KHz) 3.5 Po(W) Figure 6: THD versus Output Power (f = KHz, V S = ) 0 THD(%) Rl=4ohm Rl=8ohm Rl=6ohm Rl=6ohmRl=8ohm Rl=4 OHM STEREO Vs(V) STEREO Po(W) 4/9

5 APPLICATION INFORMATION Input Capacitor Input capacitor is PNP type allowing source to be referenced to ground. In this way no input coupling capacitor is required. However, a series capacitor (0. uf)to the input side can be useful in case of noise due to variable resistor contact. The total gain of the bridge is given by: V OUT R = (+ R3 R ) V IN R4 Rf+R + R+R4+ JWC JWC and with the suggested values (C = C = 00 µf, Rf= 0) means: Gv = 5 db Figure 8 Bootstrap The bootstrap connection allows to increase the output swing. The suggested value for the bootstrap capacitors (00uF) avoids a reduction of the output signal also at low frequencies and low supply voltages. Voltage Gain Adjust STEREO MODE The voltage gain is determined by on-chip resistors R and R together with the external RfC series connected between pin 6 () and ground. The frequency response is given approximated by: V OUT V IN = R Rf + R + JWC With Rf=0, C=00 uf, the gain results 46 db with pole at f=3 Hz. THE purpose of Rf is to reduce the gain. It is recommended to not reduce it under 36 db. BRIDGE MODE Figure 7 with first pole at f = 3 Hz Output Capacitors. The low cut off frequency due to output capacitor depending on the load is given by: FL = ΠC OUT R L with COUT 470µF and RL = 4 ohm it means FL = 80 Hz. Pop Noise Most amplifiers similar to TEA 05B need external resistors between DC outputs and ground in order to optimize the pop on/off performance and crossover distortion. Figure 9 The bridge configuration is realized very easily thanks to an internal voltage divider which provides (at pin ) the CH output signal after reduction. It is enough to connect pin 6 (inverting input of CH ) with a capacitor to pin and to connect to ground the pin 7. The TEA 05B solution allows to save components because of such resistors (800 ohm)are included into the chip. 5/9

6 Stability A good layout is recommended in order to avoid oscillations. Generally the designer must pay attention on the following points: - Short wires of components and short connections. - No ground loops. - Bypass of supply voltage with capacitors as nearest as possible to the supply I.C.pin.The low value(poliester)capacitors must have good temperature and frequency characteristics. - No sockets. ) the heatsink can have a smaller factor of safety compared with that of a conventional circuit. There is no device damage in the case of excessive junction temperature: all that happens is that PO (and therefore Ptot) and Id are reduced. APPLICATION SUGGESTION The recommended values of the components are those shown on stereo application circuit of Fig. different values can be used, the following table can help the designer. COMPONENT RECOMMENDED VALUE C,C 0.µF INPUT DC DECOUPLING IN CASE OF SLIDER CONTACT NOISE OF VARIABLE RESISTOR C3 00µF RIPPLE REJECTON C4,C5 00µF BOOTSTRAP C6,C7 470µF PURPOSE LARGER THAN SMALLER THAN OUTPUT DECOUPLING DC C8,C9 0.5µF FREQUENCY STABILITY C0, C 00µF INVERTING INPUT DC DECOUPLING DEGRADATION OF SVR, INCREASE OF THD AT LOW FREQUENCY AND LOW VOLTAGE DANGER OSCILLATIONS OF INCREASE OF LOW FREQUENCY CUT- OFF INCREASE OF LOW FREQUENCY CUT- OFF 6/9

7 SO0 PACKAGE MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A a a b b C c 45 (typ.) D E e e F L M S 8 (max.) 7/9

8 DIP6 PACKAGE MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. a B b b D E e e F I L Z /9

9 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 994 SGS-THOMSON Microelectronics - All RightsReserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - Thaliand - United Kingdom - U.S.A. 9/9

10 This datasheet has been download from: Datasheets for electronics components.