TL064. Low power JFET quad operational amplifier. Features. Description
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1 Low power JFET quad operational amplifier Features Very low power consumption: 0 µa Wide commonmode (up to V + CC ) and differential voltage ranges Low input bias and offset currents Output shortcircuit protection High input impedance JFET input stage Internal frequency compensation Latch up free operation High slew rate: 3.5 V/µs Description The, A and B are highspeed JFET input single operational amplifiers. Each of these JFET input operational amplifiers incorporates well matched, highvoltage JFET and bipolar transistors in a monolithic integrated circuit. The devices feature high slew rates, low input bias and offset currents, and low offset voltage temperature coefficient. Noninverting Input 1 3 N DIP1 (Plastic package) D SO1 (Plastic micropackage) Output 1 1 Inverting Input 1 2 Pin connections (Top view) Output Inverting Input Noninverting Input V CC + 11 VCC Noninverting Input 2 Inverting Input Noninverting Input 3 Inverting Input 3 Output Output 3 July 07 Rev 2 1/1 1
2 Schematic diagram 1 Schematic diagram Figure 1. Circuit schematics V CC 2Ω Inverting Input Noninverting Input 6Ω Output 1/ 5k Ω 270Ω 3.2k Ω.2k Ω 0Ω V CC 2/1
3 Absolute maximum ratings and operating conditions 2 Absolute maximum ratings and operating conditions Table 1. Absolute maximum ratings Symbol Parameter Value M, AM, BM I, AI, BI C, AC, BC Unit V CC Supply voltage (1) ±18 V V i Input voltage (2) ±15 V V id Differential input voltage (3) ±30 V P tot Power dissipation 680 mw R thja R thjc Thermal resistance junction to ambient () (5) SO1 DIP1 Thermal resistance junction to case () (5) SO1 DIP1 Output shortcircuit duration (6) Infinite T oper Operating freeair temperature range 55 to to +5 0 to +70 C T stg Storage temperature range 65 to +150 C ESD HBM: human body model (7) 900 MM: machine model (8) 0 CDM: charged device model (9) All voltage values, except differential voltage, are with respect to the zero reference level (ground) of the supply voltages where the zero reference level is the midpoint between V + CC and V CC. 2. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 volts, whichever is less. 3. Differential voltages are the noninverting input terminal with respect to the inverting input terminal.. Shortcircuits can cause excessive heating and destructive dissipation. 5. Rth are typical values. 6. The output may be shorted to ground or to either supply. Temperature and/or supply voltages must be limited to ensure that the dissipation rating is not exceeded. 7. Human body model: 0pF discharged through a 1.5kΩ resistor between two pins of the device, done for all couples of pin combinations with other pins floating. 8. Machine model: a 0pF cap is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5Ω), done for all couples of pin combinations with other pins floating. 9. Charged device model: all pins plus package are charged together to the specified voltage and then discharged directly to the ground. Table 2. Operating conditions Symbol Parameter M, AM, BM I, AI, BI C, AC, BC Unit V CC Supply voltage range 6 to 36 V T oper Operating freeair temperature range 55 to to +5 0 to +70 C C/W C/W V 3/1
4 Electrical characteristics 3 Electrical characteristics Table 3. Symbol V CC = ±15V, T amb = +25 C (unless otherwise specified) M I C Unit Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. V io Input offset voltage (R s = 50Ω) T amb = +25 C T min T amb T max DV io Temperature coefficient of input offset voltage (R s = 50Ω) Input offset current (1) I io T amb = +25 C 5 0 T min T amb T max Input bias current (1) I ib T amb = +25 C 30 0 T min T amb T max 50 V icm V opp A vd GBP Input common mode voltage range Output voltage swing, R L =kω T amb = +25 C T min T amb T max Large signal voltage gain R L = kω, V o = ±V, T amb = +25 C T min T amb T max Gain bandwidth product T amb = +25 C, R L =kω, C L = 0pF ± mv μv/ C 27 6 ± ± pa na pa na V 27 V 6 V/mV MHz R i Input resistance Ω CMR SVR I CC P D SR t r Common mode rejection ratio R S = 50Ω Supply voltage rejection ratio R S = 50Ω Supply current, no load T amb = +25 C, no load, no signal Total power consumption T amb = +25 C, no load, no signal Slew rate V i = V, R L =kω, C L =0pF, A v = 1 Rise time V i = mv, R L = kω, C L =0pF, A v = db db μa mw μs db /1
5 Electrical characteristics Table 3. Symbol V CC = ±15V, T amb = +25 C (unless otherwise specified) (continued) M I C Unit Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. K ov Overshoot factor (see Figure 17) V i = mv, R L = kω, C L = 0pF, A v = 1 % e n Equivalent input noise voltage R S = 0Ω, f = 1KHz nv Hz 1. The input bias currents of a FETinput operational amplifier are normal junction reverse currents, which are temperature sensitive.pulse techniques must be used that will maintain the junction temperature as close to the ambient temperature as possible. Table. Symbol V CC = ±15V, T amb = +25 C (unless otherwise specified) AC, AI, AM BC, BI, BM Parameter Min. Typ. Max. Min. Typ. Max. Unit V io Input offset voltage (R s = 50Ω) T amb = +25 C T min T amb T max DV io Temperature coefficient of input offset voltage (R s = 50Ω) Input offset current (1) 5 0 I io T amb = +25 C 3 T min T amb T max Input bias current (1) I ib T amb = +25 C 30 0 T min T amb T max 7 V icm V opp Input common mode voltage range Output voltage swing (R L = kω) T amb = +25 C T min T amb T max Large signal voltage gain, R L =kω, V o = ±V A vd T amb = +25 C T min T amb T max ± mv μv/ C 27 6 ± pa na pa na V 27 V 6 V/mV GBP Gain bandwidth product T amb = +25 C, R L =kω, C L = 0pF 1 1 MHz R i Input resistance Ω CMR SVR I CC Common mode rejection ratio R S = 50Ω Supply voltage rejection ratio R S = 50Ω Supply current, no load T amb = +25 C, no load, no signal db db μa 5/1
6 Electrical characteristics Table. Symbol V CC = ±15V, T amb = +25 C (unless otherwise specified) (continued) AC, AI, AM BC, BI, BM Parameter Min. Typ. Max. Min. Typ. Max. Unit P D SR t r Total power consumption T amb = +25 C, no load, no signal Slew rate V i = V, R L = kω, C L = 0pF, A v = 1 Rise time V i = mv, R L = kω, C L = 0pF, A v = 1 K ov Overshoot factor (see Figure 17) V i = mv, R L = kω, C L = 0pF, A v = 1 e n Equivalent input noise voltage R S = 0Ω, f = 1KHz 1 1 db V/μs μs % 2 2 nv Hz 1. The input bias currents of a FETinput operational amplifier are normal junction reverse currents, which are temperature sensitive.pulse techniques must be used that will maintain the junction temperature as close to the ambient temperature as possible. 6/1
7 Electrical characteristics Figure 2. Maximum peaktopeak output voltage versus supply voltage Figure 3. Maximum peaktopeak output voltage versus free air temp Figure. Maximum peaktopeak output voltage versus load resistance Figure 5. Maximum peaktopeak output voltage versus frequency Figure 6. Differential voltage amplification versus free air temperature Figure 7. Large signal differential voltage amplification and phase shift versus frequency DIFFERENTIAL VOLTAGE AMPLIFICATION (V/mV) V CC = 15V R L = kω FREE AIR TEMPERATURE ( C) DIFFERENTIAL VOLTAGE AMPLIFICATION (V/V) PHASE SHIFT (right scale) V CC = 5V to 15V R L = 2kΩ T amb = +25 C DIFFERENTIAL VOLTAGE AMPLIFICATION (left scale) k k 0k 1M M FREQUENCY (Hz) /1
8 Electrical characteristics Figure 8. Supply current per amplifier versus supply voltage Figure 9. Supply current per amplifier versus free air temperature SUPPLY CURRENT (μa) T amb = +25 C No signal No load SUPPLY VOLTAGE ( V) SUPPLY CURRENT (μa) V CC No signal No load = 15V FREE AIR TEMPERATURE ( C) Figure. Total power dissipated versus free air temperature Figure 11. Common mode rejection ratio versus free air temperature TOTAL POWER DISSIPATED (mw) V CC = 15V No signal No load FREE AIR TEMPERATURE ( C) COMMON MODE REJECTION RATIO (db) V CC = 15V R L = kω FREE AIR TEMPERATURE ( C) Figure 12. Normalized unity gain bandwidth slew rate, and phase shift versus temperature Figure 13. Input bias current versus free air temperature NORMALIZED UNITYGAIN BANDWIDTH AND SLEW RATE UNITYGAINBANDWIDTH (left scale) PHASE SHIFT (right scale) SLEW RATE (left scale) V CC = 15V R L = kω f = B for phase shift FREE AIR TEMPERATURE ( C) 1 NORMALIZED PHASE SHIFT INPUT BIAS CURRENT (na) 0 V CC = 15V FREE AIR TEMPERATURE ( C) 8/1
9 Electrical characteristics Figure 1. Voltage follower large signal pulse response Figure 15. Output voltage versus elapsed time INPUT AND OUTPUT VOLTAGES (V) INPUT V = 15V CC R = kω L C L = 0pF T amb = +25 C OUTPUT TIME (μs) OUTPUT VOLTAGE (mv) OVERSHOOT % 90% V CC = 15V R L = k Ω T t amb = +25 C r TIME ( μs) Figure 16. Equivalent input noise voltage versus frequency EQUIVALENT INPUT NOISE VOLTAGE (nv/vhz) V CC = 15V R S = 0Ω T amb = +25 C k k k 0k 0k FREQUENCY (Hz) Parameter measurement information Figure 17. Voltage follower Figure 18. Gainof inverting amplifier k Ω k Ω e I 1k Ω e I 1k Ω 1/ e o 1/ e o R L C L = 0pF R L C L = 0pF 9/1
10 Typical applications Typical applications Figure 19. Audio distributor amplifier f O = 0kHz 1M Ω 1/ Output A Input 1μF 1/ 1/ Output B 0k Ω 0k Ω 1OO μf 0k Ω 0k Ω V CC + 1/ Output C 5 Package information In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a leadfree second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: /1
11 Package information Figure. Ref. DIP1 package mechanical data Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max. a B b b D E e e F I L Z /1
12 Package information Figure 21. Ref. SO1 package mechanical data Millimeters Dimensions Inches Min. Typ. Max. Min. Typ. Max. A a a b b C c1 5 (typ.) D E e e F G L M S 8 (max.) 12/1
13 Ordering information 6 Ordering information 06 Table 5. Part number Order codes Temperature range Package Packing Marking MN AMN BMN MD/MDT AMD/AMDT BMD/BMDT 55 C, +125 C DIP1 SO1 Tube Tube or tape & reel MN AMN BMN 06M 06AM 06BM IN AIN BIN ID/IDT AID/AIDT BID/BIDT 0 C, +5 C DIP1 SO1 Tube Tube or tape & reel IN AIN BIN 06I 06AI 06BI CN ACN BCN CD/CDT ACD/ACDT BCD/BCDT 0 C, +70 C DIP1 SO1 Tube Tube or tape & reel CN ACN BCN 06C 06AC 06BC 7 Revision history Table 6. Document revision history Date Revision Changes 13Nov01 1 Initial release. 25Jul07 2 Added R thja, R thjc and ESD values in Table 2: Operating conditions. Added Table 2: Operating conditions. Expanded Table 5: Order codes. Format update. 13/1
14 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 07 STMicroelectronics All rights reserved STMicroelectronics group of companies Australia Belgium Brazil Canada China Czech Republic Finland France Germany Hong Kong India Israel Italy Japan Malaysia Malta Morocco Singapore Spain Sweden Switzerland United Kingdom United States of America 1/1
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