TS V micropower shunt voltage reference. Features. Applications. Description
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1 2. micropower shunt voltage reference Features 2.5 typical output voltage Ultra low current consumption: 4µA typ. High 25 C ±2% (standard version) ±1% (A grade) High stability when used with capacitive loads Industrial temperature range: -4 C to +85 C 1ppm/ C maximum temperature coefficient Applications Computers Instrumentation Battery chargers Switch mode power supply Battery operated equipment L SOT23-3L (Plastic micropackage) Pin connections (Top view) Description The TS822 is a low power shunt voltage reference providing a stable 2. output voltage over the industrial temperature range (-4 C to +85 C). Availabe in SOT23-3 surface mount package, it can be designed in applications where space saving is critical. The low operating current is a key advantage for power restricted designs. In addition, the TS822 is very stable and can be used in a broad range of application conditions. August 27 Rev 2 1/9 9
2 Absolute maximum ratings and operating conditions TS822 1 Absolute maximum ratings and operating conditions Table 1. Absolute maximum ratings Symbol Parameter Value Unit I k Reverse breakdown current 2 ma I f Forward current 1 ma P d Power dissipation (1) SOT mw T stg Storage temperature -65 to +15 C ESD Human body model (HBM) (2) Machine model (MM) (3) 1. P d is calculated with T amb = 25 C and R thja = 34 C/W for the SOT23-3L package 2 kv 2 V T lead Lead temperature (soldering, 1 seconds) 26 C 2. Human body model: 1pF discharged through a 1.5kΩ resistor between two pins of the device, done for all couples of pin combinations with other pins floating. 3. Machine model: a 2pF cap is charged to the specified voltage, then discharged directly between two pins of the device with no external series resistor (internal resistor < 5Ω), done for all couples of pin combinations with other pins floating. Table 2. Operating conditions Symbol Parameter Value Unit I k-min Minimum operating current 5 μa I k-max Maximum operating current 15 ma T oper Operating free air temperature range -4 to +85 C 2/9
3 Electrical characteristics 2 Electrical characteristics Table 3. TS822 (2% precision) T amb = 25 C (1) (unless otherwise specified) Symbol Parameter Test conditions Min. Typ. Max. Unit Reverse breakdown voltage I k = 1μA V V k I Reverse breakdown voltage tolerance k = 1μA -5 5 mv I k-min Minimum operating current T = 25 C ΔV ref /ΔT Average temperature coefficient I k = 1μA 3 1 ppm/ C ΔV k /ΔI k R ka Reverse breakdown voltage change with operating current range Reverse static impedance I k-min < I k < 1mA 1mA < I k < 15mA I k = I k-min to 1mA I k = 1 to 15mA K vh Long term stability I k = 1μA, t = 1hrs 12 ppm En Wide band noise I k = 1μA, 1Hz < f < 1kHz 35 nv/ Hz 1. Limits are 1% production tested at 25 C. Behavior at temperature range limits is guaranteed by correlation and design. Table 4. TS822A (1% precision) T amb = 25 C (1) (unless otherwise specified) Symbol Parameter Test conditions Min. Typ. Max. Unit Reverse breakdown voltage I k = 1μA V V k I Reverse breakdown voltage tolerance k = 1μA mv I k-min Minimum operating current T = 25 C ΔV ref /ΔT Average temperature coefficient I k = 1μA 3 1 ppm/ C ΔV k /Δ Ik R ka Reverse breakdown voltage change with operating current range Reverse static impedance I k-min < I k < 1mA 1mA < I k < 15mA I k = I k-min to 1mA I k = 1mA to 15mA K vh Long term stability I k = 1μA, t = 1hrs 12 ppm En Wide band noise I k = 1μA, 1Hz < f < 1kHz 35 nv/ Hz 1. Limits are 1% production tested at 25 C. Behavior at temperature range limits is guaranteed by correlation and design. μa mv Ω μa mv Ω 3/9
4 Electrical characteristics TS822 Figure 1. Reference voltage versus cathode current Figure 2. Minimum operating current Reference voltage versus cathode current 15 3 Minimum operating current Cathode current (ma) 1 5 Cathode voltage (V) T=+25 C T=+85 C T=-4 C Cathode voltage (V) 2 4 Cathode current (µa) Figure 3. Test circuit Figure 4. Reference voltage versus temperature Reference voltage versus Temperature Test circuit % Vin R Ik=(Vin-Vref)/R Vout=Vref Cathode voltage (V) % -1% % Temperature ( C) Figure 5. Static impedance (R ka ) versus temperature Figure 6. Noise voltage versus frequency Static impedance (Ohms) Static impedance (Rka) versus temperature Noise voltage (nv/vhz) Noise voltage versus Frequency CL=1µF CL=1µF CL=1µF CL=1nF CL= Temperature ( C) Frequency (KHz) 1. 4/9
5 Electrical characteristics Figure 7. Test circuit for pulse response at I k =1µA Figure 8. Pulse response for I k =1µA Pulse response for Ik=1µA Test circuit for pulse response at Ik=1µA 5 25k ohm Ik=1µA Pulse Generator Intput Figure 9. Pulse response for I k =1µA (detailed part) Figure 1. Pulse response for I k =1µA (detailed part) Pulse response for Ik=1µA Detailed part Pulse response for Ik=1µA Detailed part Figure 11. Test circuit for pulse response at I k =1mA Figure 12. Pulse response for I k =1mA Pulse response for Ik=1mA Test circuit for pulse response at Ik=1mA 2.5k ohm Ik=1mA Pulse Generator Intput /9
6 Package information TS822 Figure 13. Pulse response for I k =1mA (detailed part) Figure 14. Pulse response for I k =1mA (detailed part) Pulse response for Ik=1mA Detailed part Pulse response for Ik=1mA Detailed part Time (ns) Package information In order to meet environmental requirements, STMicroelectronics offers these devices in ECOPACK packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an STMicroelectronics trademark. ECOPACK specifications are available at: 6/9
7 Package information Figure 15. Ref. SOT23-3 package mechanical data Millimeters Dimensions Mils Min. Typ. Max. Min. Typ. Max. A A A b C D E E e e L L k /A 7/9
8 Ordering information TS822 4 Ordering information Table 5. Order codes Part number Precision Temperature range Package Packing Marking TS822ILT 2% L223-4 C to +85 C SOT23-3 Tape & reel TS822AILT 1% L222 5 Revision history Table 6. Document revision history Date Revision Changes 21-Mar-22 1 Initial release. 2-Aug-27 2 Removed information related to TO-92 package. Format update. 8/9
9 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 27 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 9/9
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Low forward voltage TVS Transky Features High peak pulse power: 600 W (10/1000 µs) 4000 W (8/20 µs) Stand-off voltage 5 or 12 V Low forward voltage: 0.48 V @ 0.85 A @ 25 C K A Low clamping factor V CL
Obsolete Product(s) - Obsolete Product(s)
N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET II Power MOSFET Features Type V DSSS R DS(on) max I D 100 V < 0.065 Ω 23 A Exceptional dv/dt capability 100% avalanche tested Application oriented
PD RF power transistor the LdmoST plastic family. Features. Description
RF power transistor the LdmoST plastic family Features Excellent thermal stability Common source configuration Broadband performances P OUT = 1 W with 15 db gain @ 870 MHz Plastic package ESD protection
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Low drop - Low supply voltage Low ESR capacitor compatible Feature summary Input voltage from 1.7 to 3.6V Ultra low dropout voltage (130mV typ. at 300mA load) Very low quiescent current (110µA typ. at
LD3985xx. Ultra low drop-low noise BiCMOS voltage regulators low ESR capacitors compatible. Features. Description
Ultra low drop-low noise BiCMOS voltage regulators low ESR capacitors compatible Features Input voltage from 2.5 V to 6 V Stable with low ESR ceramic capacitors Ultra low dropout voltage (100 mv typ. at
L79xxC. Negative voltage regulators. Features. Description
Negative voltage regulators Features Output current up to 1.5 A Output voltages of -5; -8; -12; -15; -20 V Thermal overload protection Short circuit protection Output transition SOA protection Description
Obsolete Product(s) - Obsolete Product(s)
1-bit dual supply bus buffer level translator with A-side series resistor Features High speed: t PD = 4.4ns (Max.) at T A = 85 C V CCB = 1.65V; V CCA = 3.0V Low power dissipation: I CCA = I CCB = 5µA(Max.)
74LCX139 Low voltage CMOS Dual 2 to 4 decoder / demultiplexer Features Description Order codes
Low voltage CMOS Dual 2 to 4 decoder / demultiplexer Features 5V tolerant inputs High speed: t PD = 6.2ns (Max) at V CC = 3V Power down protection on inputs and outputs Symmetrical output impedance: I
SD1728 (TH430) RF & Microwave transistors HF SSB application. Features. Description. Pin connection
SD1728 (TH430) RF & Microwave transistors HF SSB application Features 13.56MHz 44V Gold metallization Common emitter P OUT = 200W with 15dB gain Description The SD1728 is a 50V epitaxial silicon NPN planar
ESDA18-1F2. Transil, transient voltage suppressor. Features. Description. Complies with the following standards A 1
Transil, transient voltage suppressor Features Stand-off voltage 16V Unidirectional device Low clamping factor V CL /V BR Fast response time Very thin package: 0.65 mm Complies with the following standards
LF253, LF353. Wide bandwidth dual JFET operational amplifiers. Features. Description
Wide bandwidth dual JFET operational amplifiers Features Low power consumption Wide common-mode (up to + ) and differential voltage range Low input bias and offset current Output short-circuit protection
TL431. Programmable voltage reference. Features. Applications. Description
Programmable voltage reference Features Adjustable output voltage: 2.5 to 36 V Sink current capability: 1 to 100 ma Typical output impedance: 0.22 Ω 1% and 2% voltage precision Automotive temperature range
1N5908 SM5908. Transil. Features. Description. Complies with the following standards. Peak pulse power: Stand off voltage: 5 V Unidirectional
1N5908 SM5908 Transil Features Peak pulse power: 1500 W (10/1000 μs) Stand off voltage: 5 V Unidirectional A A Operating T jmax : 175 C High power capability at T jmax : 1500 W (10/1000 µs) JEDEC registered
Obsolete Product(s) - Obsolete Product(s)
Low forward voltage TVS: Transky Main applications Power rail ESD transient over-voltages and reverse voltages protection for 5 and 12 V supplied IC s Description The Transky is designed specifically for
STV300NH02L. N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET. Features. Applications. Description
N-channel 24V - 0.8mΩ - 280A - PowerSO-10 STripFET Power MOSFET Features Type V DSS R DS(on) I D STV300NH02L 24V 0.001Ω 280A R DS(on) *Q g industry s benchmark Conduction losses reduced Low profile, very
Obsolete Product(s) - Obsolete Product(s)
2N6284 2N6287 Complementary power Darlington transistors Features Complementary transistors in monolithic Darlington configuration Integrated collector-emitter antiparallel diode Applications Audio power
MD2103DFH. High voltage NPN power transistor for standard definition CRT display. Features. Description. Applications
High voltage NPN power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector enhanced generation Stable performance versus operating temperature variation
LS1240. Electronic two-tone ringer. Features. Description. Pin connection (top view)
Electronic two-tone ringer Features Low current consumption, in order to allow the parallel operation of 4 devices Integrated rectifier bridge with zener diodes to protect against over voltages little
STN2580. High voltage fast switching NPN power transistor. Features. Applications. Description. High voltage capability Fast switching speed
High voltage fast switching NPN power transistor Datasheet production data Features High voltage capability Fast switching speed Applications Lighting Switch mode power supply Description This device is
STN2NF10. N-channel 100V Ω - 2.4A - SOT-223 STripFET II Power MOSFET. Features. Description. Application. Internal schematic diagram.
N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET II Power MOSFET Features Type V DSS R DS(on) I D STN2NF10 100V < 0.26Ω 2.4A 2 Description This Power MOSFET is the latest development of STMicroelectronics