RFVA0016 Application Note
|
|
- Peter Andrews
- 6 years ago
- Views:
Transcription
1 AN RFMD APPLICATION NOTE RFVA16 Application Note Product Description The RFVA16 is a small.2mm x.2mm leadless MCM package integrated analog controlled variable gain amplifier for broadband applications. It offers exceptional linearity over a greater than 3dB gain control. This analog controlled variable gain amplifier is ideal for Cellular, 3G Infrastructure, WiBro, WiMAX, LTE, Microwave Radio and High Linearity Power Control applications. This variable gain amplifier is controlled by a single V to 3.3V positive supply voltage when mode pin is V or V to V positive supply voltage when mode is pin V. RFMD's RFVA16 is capable of operating in other bands such as (89MHz to 91MHz, 177MHz to 183MHz). Its external matching allows for configurations in different bands with a single module across 4MHz to 27MHz. The following performance data of other band application was collected at room temperature, V CC, V REF is V and a single V to 3.3V positive supply voltage for voltage control when mode pin is V. AN1226 RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 212, RF Micro Devices, Inc Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or customerservice@rfmd.com. 1 of 7
2 RFVA16 Application Note Other Band Application 1. RFVA16 Typical Performance - 9MHz Application Circuit 1.1 Schematic 2 1.K Ohm C C1.1uF C.1uF C24 3 C2 1pF 1pF C.1uF C6 1 Ohm R2 1pF 1pF C7 Ohm R16 C8 VCTRL MODE _2 _3 39nH 1pF L1 C9 L2.6nH C1 R3 Ohm C12 1pF 1pF 1.pF 3.3pF VREF_1 2189_IN C28 1pF L 1.nH C16.2pF C29 68pF 387_OUT VVA_IN VVA_OUT R12 Ohm L12 8.2nH C21 2.2pF C19 9pF R1 2.2K Ohm R9 Ohm AN Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or customerservice@rfmd.com. 2 of 7
3 RFVA16 Application Note 1.2 S-Parameters (89MHz to 91MHz) Output Return Loss versus at 9MHz Input Return Loss versus at 9MHz Output Return Loss versus Frequency versus Input Return Loss versus Frequency versus V 1V V 1V 1.4V 1.8V 2.2V V 1.8V 2.2V AN Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or customerservice@rfmd.com. 3 of 7
4 RFVA16 Application Note 1.3 Data Gain versus Attenuation versus Attenuation (db) Gain versus Frequency versus 4 Output IP3 versus Output IP3 (dbm) V 1V 1.4V 1.8V 2.2V 2.4V 2.6V 2.8V Noise Figure versus Frequency versus 4 ACP versus Output Power Noise Figure (db) ACP (dbc) V 1V 1.4V 1.8V 2.2V 2.6V Output Power (dbm) Modulation: W-CDMA 3GPP 3. for ACP AN Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or customerservice@rfmd.com. 4 of 7
5 RFVA16 Application Note 2. RFVA16 Typical Performance - 18MHz Application Circuit 2.1 Schematic 2 1.K Ohm C C1.1uF C.1uF C24 3 C2 1pF 1pF C.1uF C6 1 Ohm R2 1pF 1pF C7 Ohm R16 C8 VCTRL MODE _2 _3 1pF 27nH L1 C9 L2 2.7nH C1 R3 Ohm C12 1pF 1pF 1.pF 1.8pF VREF_1 2189_IN C28 1pF L 4.7nH C16.1pF C29 1.8pF 387_OUT VVA_IN VVA_OUT R12 Ohm L12 1nH C21 2.2pF C19 2.1pF R1 2.2K Ohm R9 Ohm AN Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or customerservice@rfmd.com. of 7
6 RFVA16 Application Note 2.2 S-Parameters (177MHz to 183MHz) Output Return loss versus at 18MHz Input Return Loss versus at 18MHz Output Return Loss versus Frequency versus Input Return Loss versus Frequency versus -1-2 V 1.4V 2V 2.4V 2.8V V 1.4V 2V V 2.8V AN Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or customerservice@rfmd.com. 6 of 7
7 RFVA16 Application Note 2.3 Data Gain versus Attenuation versus Attenuation (db) Gain versus Frequency versus Output IP3 versus Output IP3 (dbm) V 1.4V 2V 2.4V 2.8V Noise Figure versus Frequency versus 4 ACP versus Output Power Noise Figure (db) V 1.4V 2V 2 2.4V 2.6V ACP (dbc) Output Power (dbm) Modulation: W-CDMA 3GPP 3. for ACP AN Thorndike Road, Greensboro, NC For sales or technical support, contact RFMD at (+1) or customerservice@rfmd.com. 7 of 7
RFPA2013 Application Note
AN RFMD APPLICATION NOTE RFPA1 Application Note Product Description The RFPA1 is a.w QFN package power amplifier specifically designed for Wireless Infrastructure applications. The RFPA1 is a single-stage
More informationRFVA1017 ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER
Analog Controlled Variable Gain Amplifier RFVA1017 ANALOG CONTROLLED VARIABLE GAIN AMPLIFIER Package: MCM, 7mm x 7mm VCTRL 8 Features 1425MHz to 1550MHz Operation Gain = 27dB Typical Gain Adjustment Range
More informationProduct Description. GaAs HBT GaAs MESFET InGaP HBT
Direct Quadrature Modulator RFMD0014 DIRECT QUADRATURE MODULATOR Package: QFN, 24-Pin, 4mm x 4mm Features ACPR Performance: -70 dbc Typ. for 1-Carrier WCDMA Very High Linearity: +26 dbm OIP3 Very Low Noise
More informationRDA1005L DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50 MHZ TO 4000 MHZ, 6 BIT
Digital Controlled Variable Gain Amplifier 50 MHz to 4000 MHz, 6 Bit RDA1005L DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50 MHZ TO 4000 MHZ, 6 BIT Package: MCM, 32-Pin, 5.2 mm x 5.2 mm Features Broadband
More informationGND GND GND. Product Description. Ordering Information. Sample bag with 25 pieces 7 Sample reel with 100 pieces. GaAs MESFET Si BiCMOS Si CMOS Si BJT
Temperature Compensating Attenuator TEMPERATURE COMPENSATING ATTENUATOR Package: QFN, 16-Pin,.9mm x 3mm x 3mm GND VDD GND GND 16 15 14 13 Features Patent Pending Circuit Architecture Broadband 5MHz to
More informationProduct Description. Ordering Information. GaAs MESFET Si BiCMOS
Digital Controlled Variable Gain Amplifier 1700MHz to 2400MHz RFDA2077 DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 1700MHz to 2400MHz Package: MCM 32-Pin, 7.0mmx7.0mm Features Dual Channel VGA Frequency
More informationRF3857 DUAL CHANNEL LNA WITH BYPASS MODE
DUAL CHANNEL LNA WITH BYPASS MODE Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm Features Low Noise and High Intercept Point Adjustable Bias Current Power Down Low Insertion Loss Bypass Feature 1.8V to 4V
More informationVCC1 GND IN GND LOP LON GND GND. Product Description. GaAs HBT GaAs MESFET InGaP HBT
Direct Quadrature Modulator 145MHz to 27MHz RFMD214 DIRECT QUADRATURE MODULATOR 145MHz TO 27MHz Package: QFN, 24-Pin, 4mm x 4mm VCC1 IN IP 24 23 22 21 2 19 Features ACPR Performance: -7dBc Typ. for 1-Carrier
More informationN/C GND LOIN GND N/C N/C N/C N/C. VLOA1 VLOA2 N/C N/C Vc1 Vc2 Vg2 VMPA. Product Description. Ordering Information
RFUV173 RFUV173 21GHz TO 26.GHz GaAs MMIC IQ UPCONVERTER Package: QFN, 32-Pin, mm x mm x.9mm N/C GND I N/C GND Q N/C Vg1 32 31 3 29 28 27 26 2 Features RF Frequency: 21GHz to 26.GHz LO Frequency (LSB):
More informationAbsolute Maximum Ratings Parameter Rating Unit V D1, V D2, V D3 +8 V V G 0 V Junction Temperature C Continuous P DISS (T = ) C/W (derate 37 mw/ C abov
9.8GHz to 13.5GHz High Linearity RFPA1002 9.8GHz TO 13.5GHz HIGH LINEARITY POWER AMPLIFIER Package: Ceramic QFN, -pin, 6mm x 6mm x 0.95mm 38 Vd1 Vg2 Vd2a 37 36 34 33 1 Features Frequency Range: 9.8GHz
More informationRF V LOW NOISE AMPLIFIER/ 3V DRIVER AMPLIFIER
3.3V LOW NOISE AMPLIFIER/ 3V DRIVER AMPLIFIER Package Style: SOT 5-Lead Features Low Noise and High Intercept Point Adjustable Bias Current Power Down Control Single 2.7V to 5.0V Power Supply 0.4GHz to
More informationRF V TO 4.0V, 915MHz TRANSMIT/RECEIVE MODULE
RF6693.1V to 4.V, 91MHz Transmit/Receive Module RF669 3.1V TO 4.V, 91MHz TRANSMIT/RECEIVE MODULE Package: LGA, 28-Pin,.mm x.mm ASW_RX BAL_IN 1 28 27 26 2 24 23 22 Features Tx Output Power: 3dBm NC 2 3
More informationAbsolute Maximum Ratings Parameter Rating Unit Max Input Power, OFDM Modulated, 3:1 Load VSWR +39 dbm Max Input Power, 2:1 VSWR +41 dbm ESD HBM Rating
1W GaAs phemt SPDT Switch FMS231-1 1W GaAs phemt SPDT SWITCH Package: 3mmx3mm QFN Product Description The FMS231-1 is a 1W, Single-pole, Double-throw, (SPDT) GaAs phemt reflective antenna switch. The switch
More informationRF V TO 4.0V,915MHz Transmit/Receive
3.3V to 4.0V,9MHz Transmit/Receive Module RF639 3.3V TO 4.0V,9MHz Transmit/Receive Module Package: LGA, 8-Pin,.mm x.0mm Features Tx Output Power: dbm Separate 0 Tx/Rx Transceiver Interface Rx Insertion
More informationRFDA0056 Digital Controlled Variable Gain Amplifier 300MHz to 1100MHz, 6-Bit 0.5dB LSB Control
Digital Controlled Variable Gain Amplifier 3MHz to MHz, 6- Bit.dB LSB Control RFDA6 Digital Controlled Variable Gain Amplifier 3MHz to MHz, 6-Bit.dB LSB Control Package: MCM 8-Pin, 6.mm x 6.mm 8 7 6 3
More informationPreliminary C0.25 VDD N/C RF1 N/C N/C. Product Description. Ordering Information
RFSA74 Parallel Controlled Digital Step Attenuator 5MHz to 4MHz, 7-Bit,.5dB LSB Package Style: QFN 4-Pin, 4mm x 4 mm Features C.5 C C C4 C8 C6 4 3 9 Frequency Range 5MHz to 4MHz 7-Bit, 3.75dB Range,.5dB
More informationRF2126 HIGH POWER LINEAR AMPLIFIER
RF16High Power Linear Amplifier RF16 HIGH POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Slug Features Single 3V to 6.0V Supply 1.3W Output Power 1dB Gain 45% Efficiency
More informationRF3376 General Purpose Amplifier
General Purpose Amplifier RF3376 General Purpose Amplifier Package Style: SOT8 Features DC to >6000MHz Operation Internally Matched Input and Output 22dB Small Signal Gain +2.0dB Noise Figure +11dBm Output
More informationRFFM V to 4.0V, 450MHz to 470MHz Transmit/Receive Front End Module
.V to.0v, 0MHz to 0MHz Transmit/Receive Front End Module Package Style: LGA, 8-Pin,.mm x.0mm NC 8 Features Tx Output Power: 0dBm Tx Gain: 0dB Separate 0Ω Tx/Rx Transceiver Interface Rx Insertion Loss:
More informationCGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier CGA-6618Z DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: E
Dual CATV 5MHz to 1MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP- Product Description RFMD s CGA-1Z is a high performance GaAs HBT MMIC amplifier.
More informationRF1200 BROADBAND HIGH POWER SPDT SWITCH
BROADBAND HIGH POWER SPDT SWITCH Package Style: QFN, 6-pin, 2x2 Features Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage: 2.6V to 5.0V
More informationRF2162 3V 900MHz LINEAR AMPLIFIER
3V 900MHz LINEAR AMPLIFIER Package Style: QFN, 16-Pin, 4x4 Features Single 3V Supply 9dBm Linear Output Power 9dB Linear Gain 35% Linear Efficiency Onboard Power Down Mode 800MHz to 960MHz Operation Applications
More informationRFDA3016 Digital Controlled Variable Gain Amplifier 3000MHz to 3800MHz, 6-Bit 0.5dB LSB Control
Digital Controlled Variable Gain Amplifier 3MHz to 38MHz, 6- Bit.dB LSB Control RFDA316 Digital Controlled Variable Gain Amplifier 3MHz to 38MHz, 6-Bit.dB LSB Control Package: MCM 28-Pin, 6.mm x 6.mm 28
More informationRF5632 SINGLE 5.0V, 2.3 TO 2.7 GHZ LINEAR POWER AMPLIFIER
Single 5.0V, 2.3 to 2.7 GHz Linear Power Amplifier RF5632 SINGLE 5.0V, 2.3 TO 2.7 GHZ LINEAR POWER AMPLIFIER Package Style: QFN, 24-Pin, 4mmx4mmx0.9mm VBIAS VC1 24 23 22 21 20 VC2 19 Features 34dB Small
More informationSZA-2044 Biasing, V PC Selection, and Performance versus Supply Voltage
AN RFMD APPLICATION NOTE SZA-2044 Biasing, V PC Selection, and Performance versus Supply Voltage RFMD Multimarket Products Group Overview The SZA-2044 is a very flexible amplifier in terms of biasing It
More informationAmplifier Configuration
Push-Pull MHz to 1MHz High Linearity InGaP HBT Amplifier CGA-7718Z PUSH-PULL MHz to 1MHz HIGH LINEARITY InGaP HBT AMPLIFIER Package: SOIC-8 Product Description RFMD s CGA-7718Z is a high performance InGaP
More informationRFG1M MHZ to 1000MHZ 180W GaN RFG1M MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced
700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >240W Advanced Heat Sink
More informationAmplifier Configuration
Dual CATV Broadband High Linearity SiGe HBT Amplifier CGA-33Z DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER Package: ESOP- Product Description RFMD s CGA-33Z is a high performance Silicon Germanium
More informationRF3375 GENERAL PURPOSE AMPLIFIER
Basestation Applications Broadband, Low-Noise Gain Blocks IF or RF Buffer Amplifiers Driver Stage for Power Amplifiers Final PA for Low-Power Applications High Reliability Applications RF3375General Purpose
More informationRF1226 BROADBAND MEDIUM POWER DIFFERENTIAL SPDT SWITCH
BROADBAND MEDIUM POWER DIFFERENTIAL SPDT SWITCH Package Style: QFN, 12-pin, 2.0 mm x 2.0 mm x 0.55 mm Features Broadband Performance Low Frequency to 3.5 GHz Very Low Insertion Loss 0.25 db Typ at 0.90
More informationGain and Return Loss versus Frequency (w/ BiasTees) 25 C 25 C 25 C. Frequency (GHz)
SBB489Z 5MHz to 6MHz Cascadable Active Bias InGaP HBT MMIC Amplifier SBB489Z 5MHz to 6MHz CASCADABLE ACTIVE BIAS InGaP HBT MMIC AMPLIFIER Package: SOT-89 Product Description RFMD s SBB489Z is a high performance
More informationRF5623 SINGLE 5.0V, 3.3 TO 3.8 GHZ LINEAR POWER AMPLIFIER
Single 5.0V, 3.3 to 3.8 GHz Linear Power Amplifier SINGLE 5.0V, 3.3 TO 3.8 GHZ LINEAR POWER AMPLIFIER Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm Features High Gain; 32dB 2.5% EVM (RMS) at 26dBm, 5.0V Integrated
More informationRFIN 2 GND. Product Description. Ordering Information. GaAs HBT GaAs MESFET. InGaP HBT
InGaP HBT Low Power Linear Amplifier RFGA212 InGaP HBT LOW POWER LINEAR AMPLIFIER Package: DFN, -Pin, 2mmx2mm Features High OIP3=35dBm at 196MHz 1 VBIAS Low DC Power: 3.3V, 23mA Low NF = 1.6dB at 196MHz
More informationSGB-6433(Z) Vbias RFOUT
SGB-6433(Z) DC to 3.5GHz ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description RFMD s SGB-6433 is a high performance SiGe HBT MMIC amplifier
More information= 35 ma (Typ.) Frequency (GHz)
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier SGA-486(Z) DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-86 Product Description The SGA-486
More informationRF2044A GENERAL PURPOSE AMPLIFIER
GENERAL PURPOSE AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Micro-X Ceramic Features DC to >6000MHz Operation Internally matched Input and Output 18.5dB Small Signal Gain @ 2GHz 4.0dB Noise
More informationSGA2386ZDC to 5000MHz, Cascadable. SiGe HBT. MMIC Amplifier. Frequency (GHz) 2800 MHz >10dB 97 C/W
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration
More informationRF1136 BROADBAND LOW POWER SP3T SWITCH
BROADBAND LOW POWER SP3T SWITCH Package Style: QFN, 12-Pin, 2.5 mm x 2.5 mm x 0.6 mm Features Low Frequency - 3.5 GHz Operations Very Low Insertion Loss: Cell Band 0.25 db PCS Band 0.30 db High Isolation:
More informationRF V TO 5.0V, 3.3GHz TO 3.8GHz LINEAR POWER AMPLIFIER
3.0V to 5.0V, 3.3GHz to 3.8GHz Linear Power Amplifier RF5603 3.0V TO 5.0V, 3.3GHz TO 3.8GHz LINEAR POWER AMPLIFIER Package Style: QFN, 16-Pin, 3mmx3mmx0.45mm Features High Gain; 32dB 2.5% EVM (RMS) at
More informationProduct Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
GPS Low Noise Amplifier with Integrated Input/Output SAW Filters RF2818 GPS LOW NOISE AMPLIFIER WITH INTEGRATED INPUT/OUTPUT SAW FILTERS Package: Module, 3.0mmx2.5mmx1.0mm Features Compact Footprint: 3.0mmx2.5mmx1.0mm
More informationRF2044 GENERAL PURPOSE AMPLIFIER
GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic Features DC to >6000MHz Operation Internally matched Input and Output 20dB Small Signal Gain 4.0dB Noise Figure
More informationAbsolute Maximum Ratings Parameter Rating Unit Drain Voltage (V D ) 150 V Gate Voltage (V G ) -8 to +2 V Gate Current (I G ) 39 ma Operational Voltage
60W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = db at 2GHz
More informationRFDA0045 DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 10MHZ TO 850MHZ
Digital Controlled Variable Gain Amplifier RFDA0045 DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 10MHZ TO 850MHZ Package: MCM 32-Pin, 5.2mm x 5.2mm 32 31 30 29 28 27 26 25 RFIN1 RFOUT1 ATTIN ACG1 Product
More informationLNA In. Input Match. LNA Vref. LNA Sel. RX Switch. TX Switch GND. PA Vcc2 GND GND. PA Out. Product Description. GaAs HBT GaAs MESFET InGaP HBT
3.0V to 4.2V, ISM Band Transmit/Receive Module with Diversity Transfer Switch RFFM6904 3.0V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH Package: LGA, 32-pin, 8mm x 8mm x 1.2mm
More informationRFGA0024. InGaP HBT. 1000MHz. Product Description. Ordering Information
InGaP HBT MMIC Amplifier 5MHz TO 1MHz RFGA24 InGaP HBT MMIC Amplifier 5MHz TO 1MHz Package: SOT-89 Features Low Cost Broadband Gain Internally Matched Internal Active Bias No Dropping Resistor Single Supply
More informationRF2418 LOW CURRENT LNA/MIXER
LOW CURRENT LNA/MIXER RoHS Compliant & Pb-Free Product Package Style: SOIC-14 Features Single 3V to 6.V Power Supply High Dynamic Range Low Current Drain High LO Isolation LNA Power Down Mode for Large
More informationRFPA TO 5 V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER
3 TO 5 V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER Package Style: QFN, 16-Pin, 3 mm x 3 mm Features 0.5 W CW Output Power at 3.6 V 1 W CW Output Power at 5 V 32 db Small Signal Gain at 900 MHz
More informationRF1 RF2 RF3 RF4. Product Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS
BROADBAND HIGH POWER SP4T SWITCH Package Style: QFN, 12-pin, 2.5mmx2.5mm Features 2kV HBM ESD Protection on All Ports Low Frequency to >2.7GHz Operation Low Insertion Loss: 0.4dB at 1GHz Very High Isolation:
More informationI REF Q REF GND2 GND2 GND2 VCC1. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
Direct Quadrature Modulator RF480 DIRECT QUADRATURE MODULATOR RoHS Compliant & Pb-Free Product Package Style: SOIC-16 Features Typical Carrier Suppression>5dBc over temperature with highly linear operation
More informationRFDA0035 DIGITAL CONTROLLED IF DUAL VGA 5 BIT 1dB LSB CONTROL
Digital Controlled IF Dual VGA RFDA0035 DIGITAL CONTROLLED IF DUAL VGA 5 BIT 1dB LSB CONTROL Package: QFN 32-Pin, 5.0mmx5.0mm 32 31 29 OPB- A1 A0 IPA+ IPA- GNDA VCCA OPA+ OPA- 28 27 26 25 Features Dual
More informationProduct Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
RFPA38 GaAs HBT 15MHz TO 96MHz POWER AMPLIFIER Package: SOIC-8 Features 5W Output Power (P1dB) High Linearity: OIP3>48dBm High Efficiency Low Noise: NF=3.2dB at 945MHz 5V to 7V Operation Thermally Enhanced
More informationSZM-3066Z. 3.3GHz to 3.8GHz 2W POWER AMPLIFIER. Product Description. Features. Applications. Package: QFN, 6mmx6mm
3.3GHz to 3.8GHz 2W Power Amplifier SZM-3066Z 3.3GHz to 3.8GHz 2W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description RFMD s SZM-3066Z is a high linearity class AB Heterojunction Bipolar Transistor
More informationFrequency (GHz) 5000 MHz
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier SGA-86(Z) DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-86 Product Description The SGA-86
More informationRF V TO 3.6V, 2.4GHz FRONT END MODULE
3.V TO 3.6V, 2.4GHz FRONT END MODULE Package Style: QFN, 2-Pin, 3.mmx3.mmx.mm NC VBAT VBAT NC 4 3 2 Features Tx Output Power=22dBm Integrated RF Front End Module with TX/RX switch, PA, filter, and DP2T
More informationProduct Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
RECEIVE AGC AMPLIFIER Package Style: MSOP-8 Features Supports Basestation Applications -55dB to +51dB Gain Control Range at 85MHz Single 3V Power Supply IN+ 1 IN- 2 GND 3 8 VCC1 7 VCC2 6 OUT+ -2dBm Input
More informationSBB MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK. Features. Product Description. Applications
50 to 6000 InGaP HBT Active Bias Gain Block SBB3000 50 to 6000 InGaP HBT ACTIVE BIAS GAIN BLOCK Package: Bare Die Product Description RFMD s SBB3000 is a high performance InGaP HBT MMIC amplifier utilizing
More informationSGA3363Z. = 35 ma (Typ.) Frequency (GHz) T L MHz >10dB 255 C/W
SGA3363Z DC to MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description The SGA3363Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters
More informationDATA GND VCC GND RF1 GND GND GND. Product Description. Ordering Information. Sample bag with 25 pieces 7 Sample reel with 100 pieces
Serial Controlled 75W Digital Step Attenuator 5MHz to 2000MHz, 6- Bit, LSB SERIAL CONTROLLED 75 DIGITAL STEP ATTENUATOR 5MHz TO 2000MHz, 6-BIT, Package: MCM, 24-Pin, 4.2mm x 4.2mm Features Frequency Range
More informationRF5633 SINGLE 5.0V, 3.3 TO 3.8GHZ LINEAR POWER AMPLIFIER
Single 5.0V, 3.3 to 3.8GHz Linear Power Amplifier RF5633 SINGLE 5.0V, 3.3 TO 3.8GHZ LINEAR POWER AMPLIFIER Package Style: QFN, 24-Pin, 4 mm x 4 mm x 0.9 mm Features High Gain; 34dB Supports Low Gain Mode
More informationNot For New Design FMS W GaAs phemt SPDT SWITCH. Product Description. Features. Applications
10W GaAs phemt SPDT Switch FMS2031-001 10W GaAs phemt SPDT SWITCH Package: 3 mm x 3 mm QFN Product Description The FMS2031-001 is a 10 W, Single-pole, Double-throw, (SPDT) GaAs phemt reflective antenna
More informationGain and Return Loss vs Frequency. s22. Frequency (GHz)
SBA4086Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-86 Product Description RFMD s SBA4086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington
More informationV S. RF Out / V S. Specification (V S =3V) Specification (V S =4V) Min. Typ. Max. Min. Typ. Max.
SGL-263(Z) 1MHz to 25MHz Silicon Germanium Cascadable Low Noise Amplifier SGL-263(Z) 1MHz to 25MHz SILICON GERMANIUM CASCADABLE LOW NOISE AMPLIFIER MD Green, RoHS Compliant, Pb-Free (Z Part Number) Package:
More informationSGA2363ZDC to 5000MHz, Cascadable. SiGe HBT. MMIC Amplifier. Frequency (GHz) 5000 MHz >10dB
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier SGA233Z DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-33 Product Description The SGA233Z is a high performance SiGe HBT MMIC Amplifier. A Darlington
More informationRFDA4005TR13. 6-Bit, Digital Controlled Variable Gain Amplifier 50MHz to 4000MHz
6-Bit, Digital Controlled Variable Gain Amplifier 50MHz to 4000MHz RFMD s RFDA4005 is a digitally controlled variable gain amplifier featuring high linearity over the entire gain control range with noise
More informationSZA-5044(Z) 4.9GHz to 5.9GHz 5V POWER AMPLIFIER. Features. Product Description. Applications. Package: QFN, 4mmx4mm
4.9GHz to 5.9GHz 5V Power Amplifier 4.9GHz to 5.9GHz 5V POWER AMPLIFIER Package: QFN, 4mmx4mm Product Description RFMD s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier
More informationGND GND GND GND. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
Direct Quadrature Modulator RF2484 DIRECT QUADRATURE MODULATOR RoHS Compliant & Pb-Free Product Package Style: QFN, 16-pin, 4x4 Features Typical Carrier Suppression>35dBc, Sideband Suppression>35dBc over
More informationRFPA GHz TO 5.9GHz 2W InGaP AMPLIFIER
4.9GHz to 5.9GHz 2W InGaP AMPLI- FIER RFPA5026 4.9GHz TO 5.9GHz 2W InGaP AMPLIFIER Package: DFN, 6-pin, 5.59mm x 6.23mm x 0.85mm Vcc Features P1dB=33dBm at 5V 802.11g 54Mb/s Class AB Performance P OUT
More informationTypical IP3, P1dB, Gain. 850 MHz 1960 MHz 2140 MHz 2450 MHz
400 to ¼W Medium Power GaAs HBT Amplifier with Active Bias SXA-9(Z) 400 to ¼W MEDIUM POWER GaAs HBT AMPLIFIER WITH ACTIVE BIAS Package: SOT-89 Product Description RFMD s SXA-9 amplifier is a high efficiency
More informationSXA-3318B(Z) 400MHz to 2500MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER. Product Description. Features. Applications
0MHz to 20MHz Balanced ½ W Medium Power GaAs HBT Amplifier SXA-331B(Z) 0MHz to 20MHz BALANCED ½ W MEDIUM POWER GaAs HBT AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Product Description
More informationSpecification Min. Typ. Max.
High Power Reflective GaAs SP4T Switch FMS2016-005 HIGH POWER REFLECTIVE GaAs SP4T SWITCH Package: 3 mm x 3 mm QFN Product Description The FMS2016-005 is a low loss, high power, linear single-pole four-throw
More informationRFPA V 2.4GHz to 2.5GHz Matched Power Amplifier
5.0V 2.4GHz to 2.5GHz Matched Power Amplifier Package: Laminate, 14-pin,7mm x 7mm x 1mm VCC 1 14 VCC3 PA_EN 2 13 Features P OUT = 29dBm; EVM = 3%; 11n MCS7 HT40 Input and Output Matched to 50Ω High Gain:
More informationAbsolute Maximum Ratings Parameter Rating Unit Drain Voltage (V D ) 150 V Gate Voltage (V G ) -8 to +2 V Gate Current (I G ) 8 ma Operational Voltage
10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance Output Power: 16W at
More informationVCC RF IN. Input Match VREG. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT
3.0V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Package Style: QFN, 8-Pin, 2.2x2.2x0.45mm Features Single Power Supply 3.0V to 3.6V 30dB Typical Gain, Input ed to 50 2.4GHz to 2.5GHz Frequency Range
More informationRFSA2033. Low Loss Voltage Controlled Attenuator 50MHz to 6000MHz Package: QFN, 16-Pin, 0.9mm x 3mm x 3mm
Low Loss Voltage Controlled Attenuator 50MHz to 6000MHz Package: QFN, 16-Pin, 0.9mm x 3mm x 3mm Features Patented Circuit Architecture Broadband 50MHz to 6000MHz Frequency Range Low Minimum Insertion Loss
More informationSZM-5066Z 5.0V, 5GHz HIGH POWER LINEAR POWER AMPLIFIER
5.0V, 5GHz HIGH POWER LINEAR POWER AMPLIFIER Package Style: QFN, 40-Pin, 6mm x 6mm Features Single Supply Voltage 5.0V 8dB Typical Gain Across Band P OUT = 25dBm
More informationGND RFIN. Product Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS
RFS213 Voltage Controlled ttenuator RFS213 VOLTGE CONTROLLED TTENUTOR Package Style: QFN, 16-Pin,.9mm x 3mm x 3mm MODE VDD VC GND Features Patent Pending Circuit rchitecture roadband 5MHz to 4MHz Frequency
More informationRF V TO 4.2V, 2.4GHz FRONT-END MODULE
3.0V TO 4.2V, 2.4GHz FRONT-END MODULE Package Style: QFN, 20-Pin, 3.5mmx3.5mmx0.5mm Features TX Output Power: 22dBm TX Gain: 28dB RX Gain: 11.5dB RX NF: 2.5dB Integrated LNA With Bypass Mode Applications
More informationRF V to 4.2V, 2.4GHz Front End Module
3.0V to 4.2V, 2.4GHz Front End Module Package Style: QFN, 20-Pin, 3.5mm x 3.5mm x 0.5mm TXCT _BAIS GND NC 15 14 13 12 11 Features TX Output Power: 23dBm TX Gain: 28dB RX Gain: 11.5dB RX NF: 3dB Integrated
More informationSGA-8343 GPS Application Circuits
AN RFMD APPLICATION NOTE SGA-8343 GPS Application Circuits RFMD Worldwide Applications Design Application Note -- AN-61 Abstract RFMD s SGA-8343 is a high performance SiGe amplifier designed for operation
More informationRF8889A SP10T ANTENNA SWITCH MODULE
SP10T ANTENNA SWITCH MOD- ULE RF8889A SP10T ANTENNA SWITCH MODULE Package: QFN, 3.0mmx3.8mmx0.85mm GSM Rx1 RF8889A GSM Rx2 Features Broadband Performance Suitable for all Cellular Modulation Schemes up
More informationProduct Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
Basestation pplications Broadband, Low-Noise Gain Blocks IF or RF Buffer mplifiers Driver Stage for Power mplifiers Final P for Low-Power pplications High Reliability pplications RF3396General Purpose
More informationRFPA3805TR13. GaAs HBT 2-Stage Power Amplifier 700MHz to 2700MHz
GaAs HBT 2-Stage Power Amplifier 700MHz to 2700MHz RFMD s RFPA3805 is a GaAs HBT linear power amplifier specifically designed for Wireless Infrastructure applications. Using a highly reliable GaAs HBT
More informationNOT FOR NEW DESIGNS SGA5386Z. Absolute Maximum Ratings MHz. Parameter Rating Unit. Typical Performance at Key Operating Frequencies
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration
More informationStage 3 Bias. Detector
.3GHz to.7ghz W Power Amplifier SZM-66Z.3GHz to.7ghz W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description RFMD s SZM-66Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier
More informationRF V, 2.4GHz TO 2.7GHz HIGH POWER AMPLIFIER
5.0V, 2.4GHz to 2.7GHz High Power Amplifier RF5652 5.0V, 2.4GHz TO 2.7GHz HIGH POWER AMPLIFIER Package: QFN, 32-Pin, 5mmx5mmx0.85mm 32 31 30 29 28 27 26 VBIAS VCC1 VCC2 25 1 24 Features High Gain = 34dB
More informationSGA4586Z DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER
DC to 4MHz, Cascadable SiGe HBT MMIC Amplifier DC to 4MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration
More informationSGA2463Z. Frequency (GHz) 18.0 dbm 1950MHz. 7.2 dbm 1950 MHz 255 C/W
SGA243Z DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-33 Product Description The SGA243Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters
More informationLNA VCC RX OUT TX IN VREG. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT
2.4GHz TO 2.5GHz, 802.11b/g/n SINGLE-BAND FRONT END MODULE Package Style: QFN, 16-pin, 3.0 x 3.0 x 0.5 mm LNA EN C RX C TX BT 16 15 14 13 Features Single Module Radio Front- End Single Supply Voltage 3.0V
More informationVC1. Input Match RF IN. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT
3.3V, 5GHz LINEAR POWER AMPLIFIER Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.45mm Features Single Supply Voltage 3.0V to 5.0V No external matching components 28dB Typical Gain Across Band P OUT =17dBm@
More informationRF V TO 4.2V, 2.4GHz FRONT END MODULE
3.V TO 4.2V, 2.4GHz FRONT END MODULE Package Style: QFN, 2-Pin, 3.5mmx3.5mmx.5mm TXCT GND VCC_BAIS VCC NC 15 14 13 12 11 Features TX Output Power: 22dBm RX Gain: 11.5dB RX NF: 2.5dB Integrated RF Front
More informationVCC RF IN. Input Match VREG. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT
3V TO 4.5V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.4mm Features Single Power Supply 3.0V to 3.6V 24dB Minimum Gain Input and Output ed to 50 2400MHz to 2500MHz
More informationCGB-1089Z. 50MHz to 1000MHz SINGLE ENDED InGaP/GaAs HBT MMIC CATV AMPLIFIER. Features. Product Description. Applications
50Mhz to 1000MHz Single Ended InGaP/GaAs HBT MMIC CATV Amplifier CGB-1089Z 50MHz to 1000MHz SINGLE ENDED InGaP/GaAs HBT MMIC CATV AMPLIFIER Product Description RFMD s CGB-1089Z is a high performance InGaP
More informationRF2334. Typical Applications. Final PA for Low Power Applications Broadband Test Equipment
RF233 AMPLIFIER Typical Applications Broadband, Low Noise Gain Blocks IF or RF Buffer Amplifiers Driver Stage for Power Amplifiers Final PA for Low Power Applications Broadband Test Equipment Product Description
More informationRF7234 3V TD-SCDMA/W-CDMA LINEAR PA MODULE BAND 1 AND 1880MHz TO 2025MHz
3V TD-SCDMA/W-CDMA LINEAR PA MODULE BAND 1 AND 1880MHz TO 2025MHz Package Style: Module, 10-Pin, 3mmx3mmx1.0mm Features TD-SCDMA and HSDPA Compliant Low Voltage Positive Bias Supply (3.4V to 4.2V) +28dBm
More informationSGL0363Z. 5MHz to 2000MHz Low Noise Amplifier. Germanium. Simplified Device Schematic. Vpc. Narrow-band Matching Network. Gnd
5MHz to MHz Low Noise Amplifier Silicon Germanium 5MHz to MHz LOW NOISE AMPLIFIER SILICON GERMANIUM Package: SOT-363 Product Description RFMD s is a low power, low noise amplifier. It is designed for.7v
More informationVCC GND RF IN. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
.GHz Low Noise Amplifier with Enable RF7G.GHz LOW NOISE AMPLIFIER WITH ENABLE Package Style: SOT Lead Features DC to >6GHz Operation.7V to.0v Single Supply High Input IP.dB Noise Figure at 00MHz db Gain
More informationProduct Description. Ordering Information. Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT
5MHz to 1MHz, Push-Pull, High Linearity InGaP HBT Amplifier Package Style: SOIC-8 Features 5V Single Supply Excellent Linearity Performance at +34dBmV Output Power per Tone Two Amplifiers in Each SOIC-8
More informationProduct Description. Ordering Information. GaAs MESFET Si BiCMOS Si CMOS Si BJT. DRAFT DRAFT1 of
UPSTREAM CATV AMPLI- FIER UPSTREAM CATV AMPLIFIER Package: QFN, -Pin, 4mm x 4mm Features Single.V Supply Operation Low Power Consumption: 14mA Typical 6db Dynamic Range: -.5dBm To 61dBmV Output Excellent
More informationRFPA V to 5.0V, 2.4GHz to 2.5GHz Integrated PA Module
Preliminary RFPA52.V to 5.V, 2.GHz to 2.5GHz Integrated PA Module Package: Laminate, mm x mm x mm RFIN Input Bias Match Circuit PA_EN Features P OUT = 2dBm, 5V < % Dynamic EVM db Typical Gain High PAE
More informationFMS W GaAs WIDEBAND SPDT SWITCH. Features. Product Description. Applications
10W GaAs Wideband SPDT Switch FMS2031-001 10W GaAs WIDEBAND SPDT SWITCH Package: 3mmx3mm QFN Product Description The FMS2031-001 is a 10-Watt, low loss, single-pole, dual-throw, Gallium Arsenide antenna
More information