Stage 3 Bias. Detector

Transcription

1 .3GHz to.7ghz W Power Amplifier SZM-66Z.3GHz to.7ghz W POWER AMPLIFIER Package: QFN, 6mmx6mm Product Description RFMD s SZM-66Z is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for 8.6 customer premises equipment (CPE) terminals in the.3ghz to.7ghz bands. It can run from a 3V to 6V supply. The external output match and bias adjustability allows load line optimization for other applications over narrower bands. It features an output power detector, on/off power control, and high RF overdrive robustness. A db step attenuator feature can be utilized by switching the second stage Power up/down control. This product features a RoHS compliant and Green package with matte finish, designated by the Z suffix Optimum Technology Matching Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS SiGe HBT GaAs phemt Si CMOS Si BJT GaN HEMT RF MEMS RFIN Vbias = 5V Vcc = 5V Power Up/Dow n Control Stage Bias Stage Bias Power Detector Stage 3 Bias RFOUT Features P db =35dBm at 6V Three Stages of Gain: 37dB 8.g 54Mb/s Class AB Performance P OUT =7dBm at.5%evm, V CC 6V, 878mA Active Bias with Adjustable Current On-Chip Output Power Detector Low Thermal Resistance Power Up/Down Control s Attenuator step db at V PC =V Applications 8.6 WiMAX Driver or Output Stage 8.b/g WiFi, WiFi CPE Terminal Applications Parameter Specification Min. Typ. Max. Unit Condition Frequency of Operation 3 7 MHz Output Power at db Compression 35 dbm.7ghz Small Signal Gain db.7ghz EVM.5 % 7dBm Output power EVM 8.g 54Mb/s-.7GHz Third Order Suppression dbc (P OUT =3dBm per tone)-.7ghz Noise Figure 8.3 db.7ghz Worst Case Input Return Loss 4 db.5ghz to.7ghz Worst Case Output Return Loss 3 4 db.5ghz to.7ghz Output Voltage Range.9 to.8 V P OUT =dbm to 33dBm Quiescent Current ma V cc =6V Power Up Control Current 4 ma V pc =6V, I VPC +I VPC +I VPC3 V cc Leakage Current A V cc =6V, V pc =V Thermal Resistance C/W junction - lead Test Conditions:.5GHz to.7ghz App circuit, Z =5, V cc =6.V, Iq=74mA, T BP =3 C RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 6, RF Micro Devices, Inc. support, contact RFMD at (+) or sales-support@rfmd.com. of

2 Absolute Maximum Ratings Parameter Rating Unit VC3 Collector Bias Current (I VC3 ) 5 ma VC Collector Bias Current (I VC ) 5 ma VC Collector Bias Current (I VC ) 5 ma *****Device Voltage (V D ) 9. V Operating Lead Temperature (T L ) -4 to +85 C ****Max CW RF output Power for 3 dbm 5 continuous long term operation Max CW RF Input Power for 5 output load 6 dbm Max CW RF Input Power for : VSWR FR out load 5 dbm Max Storage Temperature -4 to +5 C Operating Junction Temperature (T J ) +5 C ESD Human Body Model Class B Moisture Sensitivity Level MSL- ****With specified application circuit *****No RF Drive Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I CQ V CC <(T J -T L )/R TH, j-l Note: I CQ in this equation is for the stage with the highest current Caution! ESD sensitive device. Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. RoHS status based on EUDirective/95/EC (at time of this document revision). The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice. **.4 ***.5 ***.6 ***.7 Typical Performance with appropriate app circuit (V CC =6V, I CQ =655mA, 8.g 54Mb/s 64QAM) Parameter Unit.3 GHz GHz GHz GHz GHz Gain at P OUT =6dBm db P db dbm EVM% at 7dBm Output Power % Current at P OUT.5% EVM ma Input Return Loss db Output Return Loss db Note : Measured with.3ghz to.4ghz Application circuit Note : Measured with.5ghz to.7ghz Application circuit of support, contact RFMD at (+) or sales-support@rfmd.com.

3 Measured.3GHz to.4ghz Application Circuit Data (V CC =V PC =6.V, I q =653mA, T=5 C) 5 EVM vs Frequency, T=+5C 8.g, OFDM 54Mb/s, 64QAM 5 EVM vs Pout, F=.3GHz 8.g, OFDM 54Mb/s, 64QAM EVM(%) 4 3 EVM(%) GHz.4GHz support, contact RFMD at (+) or sales-support@rfmd.com. 3 of

4 5 EVM vs Pout, F=.4GHz 8.g, OFDM 54Mb/s, 64QAM -3 IM3 vs Pout ( Tone Avg.), T=+5C Tone Spacing = MHz EVM(%) 3 IM3(dBc) GHz.4GHz 44 Typical Gain vs Pout, F=.3GHz 44 Typical Gain vs Pout, F=.4GHz Gain(dB) Gain(dB) Narrowband S - Input Return Loss -4 Narrowband S - Reverse Isolation S(dB) S(dB) of support, contact RFMD at (+) or sales-support@rfmd.com.

5 S(dB) Narrowband S - Forward Gain S(dB) Narrowband S - Output Return Loss DC Supply Current vs Pout, F=.3GHz.6 DC Supply Current vs Pout, F=.4GHz Idc(A) Idc(A) RF Power Detector (Vdet) vs Pout, F=.4GHz 8 Noise Figure vs Frequency, T=+5C Vdet(V) NF(dB) support, contact RFMD at (+) or sales-support@rfmd.com. 5 of

6 S(dB) Broadband S -Input Return Loss, F=.3-.4GHz S(dB) Broadband S - Forward Gain, F=.3-.4GHz Broadband S - Output Return Loss, F=.3-.4GHz GHz db Step Attenuator Gain Delta vs Temp. Attenuator Enabled VPC=V S(dB) - -5 Delta(dB) T=-4c T=+5c T=+85c 6 of support, contact RFMD at (+) or sales-support@rfmd.com.

7 Measured.4GHz to.5ghz Application Circuit Data (V CC =V PC =6.V, I q =653mA, T=5 C) 5 EVM vs Pout, F=.4GHz 8.g, OFDM 54Mb/s, 64QAM 5 EVM vs Pout, F=.5GHz 8.g, OFDM 54Mb/s, 64QAM 4 4 EVM(%) 3 EVM(%) EVM vs Frequency, T=+5C 8.g, OFDM 54Mb/s, 64QAM -3 IM3 vs Pout ( Tone Avg.), T=+5C Tone Spacing = MHz EVM(%) 3 IM3(dBc) GHz.5GHz.4GHz.5GHz Typical Gain vs Pout, F=.4GHz Typical Gain vs Pout, F=.5GHz Gain(dB) Gain(dB) support, contact RFMD at (+) or sales-support@rfmd.com. 7 of

8 - Narrowband S - Input Return Loss -4 Narrowband S - Reverse Isolation S(dB) S(dB) Narrowband S - Forward Gain - Narrowband S - Output Return Loss S(dB) S(dB) DC Supply Current vs Pout, F=.4GHz DC Supply Current vs Pout, F=.5GHz Idc(A) Idc(A) of support, contact RFMD at (+) or sales-support@rfmd.com.

9 . RF Power Detector (Vdet) vs Pout, F=.5GHz 8 Noise Figure vs Frequency, T=+5C Vdet(V) NF(dB) Broadband S -Input Return Loss, F=.4-.5GHz 45 Broadband S - Forward Gain, F=.4-.5GHz S(dB) S(dB) Broadband S - Output Return Loss, F=.4-.5GHz GHz db Step Attenuator Gain Delta vs Temp. Attenuator Enabled VPC=V -5 3 S(dB) Delta(dB) T=-4c T=+5c T=+85c support, contact RFMD at (+) or sales-support@rfmd.com. 9 of

10 Measured.5GHz to.7ghz Application Circuit Data (V CC =V PC =6.V, I q =74mA, T=5 C) 5 EVM vs Frequency, T=+5C 8.g, OFDM 54Mb/s, 64QAM 5 EVM vs Pout, F=.5GHz 8.g, OFDM 54Mb/s, 64QAM 4 4 EVM(%) 3 EVM(%) GHz.6GHz.7GHz 5 EVM vs Pout, F=.7GHz 8.g, OFDM 54Mb/s, 64QAM -3 IM3 vs Pout ( Tone Avg.), T=+5C Tone Spacing = MHz EVM(%) 3 IM3(dBc) GHz.6GHz.7GHz 44 Typical Gain vs Pout, F=.5GHz 44 Typical Gain vs Pout, F=.7GHz Gain(dB) Gain(dB) of support, contact RFMD at (+) or sales-support@rfmd.com.

11 - -.5 Narrowband S - Input Return Loss Narrowband S - Reverse Isolation S(dB) S(dB) S(dB) Narrowband S - Forward Gain S(dB) Narrowband S - Output Return Loss DC Supply Current vs Pout, F=.5GHz DC Supply Current vs Pout, F=.7GHz Idc(A). Idc(A) support, contact RFMD at (+) or sales-support@rfmd.com. of

12 RF Power Detector (Vdet) vs Pout, F=.7GHz Noise Figure vs Frequency, T=+5C Vdet(V) NF(dB) Broadband S -Input Return Loss, F=.5-.7GHz 45 Broadband S - Forward Gain, F=.5-.7GHz S(dB) S(dB) Broadband S - Output Return Loss, F=.5-.7GHz GHz db Step Attenuator Gain Delta vs Temp. Attenuator Enabled VPC=V -5 3 S(dB) Delta(dB) T=-4c T=+5c T=+85c of support, contact RFMD at (+) or sales-support@rfmd.com.

13 Pin Function Description 7,,,, 9, 3, 39, 4 NC These are no connect (NC) pins and are not wired inside the package. It is recommended to connect them as shown in the application circuit to achieve the stated performance.,, GND These pins are internally grounded inside the package to the backside ground paddle. It is recommended to also ground them externally to the package to achieve the specified performance., 3 VC This is the collector of the first stage. 3 VBIAS This is the supply voltage for the active bias circuit of the st and nd stages. 4-5 RA-RA A resistor is tied across these pins internal to the package. 6 RF IN This is the RF input pin. It is DC grounded inside the package. Do not apply DC voltage to this pin. 8 VPC Power up/down control pin for the st stage. An external series resistor is required for proper setting of bias levels depending on control voltage. The voltage of this pin should never exceed the voltage on pin 3 by more than.5v unless the supply current from pin 3 is limited <ma. 9 VPC Power up/down control pin for the nd stage. Power down VPC<V for step attenuator function enable. An external series resistor is required for proper setting of bias levels depending on control voltage. The voltage on this pin should never exceed the voltage on pin 3 by more than.5v unless the supply current from pin 3 is limited<ma. 3, 38 VCA, VCB CA-CA C3A-C4A C4B-C3B CB-CB These two pins are connected internal to the package and connect to the nd stage collector. To achieve specified performance, the layout of these pins should match the Recommended Land Pattern. These pins have capacitatos across them internal to the package as shown in the below schematic. They are used as tuning and RF coupling elements between the nd and 3rd stage. 6, 35 VB3A, VB3B These are the connections to the base of the 3rd stage output device. To achieve specified performance, the layout of these pins should match the Recommended Land Pattern. 9 VPC3 Power up/down control pin for the nd stage. An external series reistor is required for proper setting of bias levels depending on control voltage. The voltage on this pin should never exceed the voltage on pin 3 by more than.5v unless the supply current from pin 33 is limited <ma. VDET This is the output port for the power detector. It samples the power at the input of the 3rd stage. 3-8 RF OUT These are the RF output pins and DC connections to the 3rd stage collector. 3 VBIAS3 This is the supply voltage for the active bias circuit of the 3rd stage. support, contact RFMD at (+) or sales-support@rfmd.com. 3 of

14 .3GHz to.4ghz Evaluation Board Schematic V CC =V+=V PC =6.V 4 of support, contact RFMD at (+) or sales-support@rfmd.com.

15 .3GHz to.4ghz Evaluation Board Layout V CC =V+=V PC =6.V Board material GETEK, mil thick, Dk=3.9, oz copper C7 C C6 R7 L3 C3 L R6 C5 C4 C Q L C8 C9 C R5 R R R3 R4 Bill of Materials DESG Description Notes Q SZM-66Z 6mmx6mm QFN R.87K, 63 % 4 may be used. R, 4 4.K, 63 % 4 may be used. R3.47K, 63 % 4 may be used. R5 47K, 63 4 may be used. R6, 7, 63 4 may be used. C uf 6V MLCC CAP Tantulum ok for EVM performance. Use MLCC type for best IM3 levels. C 5.6pF CAP, 63 NPO ROHM MCH85A5R6DK or equiv. C3, 4, 5, 6, 7.uF CAP, 63 X7R 4 ok, ROHM MCH8CN4K or equiv. C8.pF CAP, 63 NPO, low ESR, ATC 6SRCW5 or equiv. C9 pf CAP, 63 NPO, low ESR, ATC 6SJW5 or equiv. C.5pF CAP, 63 NPO, low ESR, ATC 6SR5JW5 or equiv. L nh IND 85 Coilcraft 85HQ - NXJBB L 4.7nH IND, 63 TOKO 63 - LL68FH4N7J L3 nh IND, 63 TOKO 63 - LL68FHNJ support, contact RFMD at (+) or sales-support@rfmd.com. 5 of

16 .4GHz to.5ghz Evaluation Board Schematic V CC =V+=V PC =6.V 6 of support, contact RFMD at (+) or sales-support@rfmd.com.

17 .4GHz to.5ghz Evaluation Board Layout V CC =V+=V PC =6.V Board material GETEK, mil thick, Dk=3.9, oz copper C7 C C6 R7 L3 C3 L R6 C5 C4 C Q L C8 C9 C R5 R R R3 R4 Bill of Materials DESG Description Notes Q SZM-66Z 6mmx6mm QFN R.87K, 63 % 4 may be used. R 5.76K, 63 % 4 may be used. R3.37K, 63 % 4 may be used. R4 3.9K, 63 % 4 may be used. R5 47K, 63 4 may be used. R6, 7, 63 4 may be used. C uf 6V MLCC CAP Tantulum ok for EVM performance. Use MLCC type for best IM3 levels. C 5.6pF CAP, 63 NPO ROHM MCH85A5R6DK or equiv. C3, 4, 5, 6, 7.uF CAP, 63 X7R 4 ok, ROHM MCH8CN4K or equiv. C8.8pF CAP, 63 NPO, low ESR, ATC 6SR8CW5 or equiv. C9 pf CAP, 63 NPO, low ESR, ATC 6SJW5 or equiv. C.pF CAP, 63 NPO, low ESR, ATC 6SRJW5 or equiv. L nh IND 85 Coilcraft 85HQ - NXJBB L 4.7nH IND, 63 TOKO 63 - LL68FH4N7J L3 nh IND, 63 TOKO 63 - LL68FHNJ support, contact RFMD at (+) or sales-support@rfmd.com. 7 of

18 .5GHz to.7ghz Evaluation Board Schematic V CC =V+=V PC =6.V 8 of support, contact RFMD at (+) or sales-support@rfmd.com.

19 .5GHz to.7ghz Evaluation Board Layout V CC =V+=V PC =6.V Board material GETEK, mil thick, Dk=3.9, oz copper C7 C C6 R7 L3 C3 L R6 C5 C4 C Q L C8 C9 R5 R R R3 R4 Bill of Materials DESG Description Notes Q SZM-66Z 6mmx6mm QFN R.5K, 63 % 4 may be used. R 4.99K, 63 % 4 may be used. R3.37K, 63 % 4 may be used. R4 4.K, 63 % 4 may be used. R5 47K, 63 4 may be used. R6, 7, 63 4 may be used. C uf 6V MLCC CAP Tantulum ok for EVM performance. Use MLCC type for best IM3 levels. C 5.6pF CAP, 63 NPO ROHM MCH85A5R6DK or equiv. C3, 4, 5, 6, 7.uF CAP, 63 X7R 4 ok, ROHM MCH8CN4K or equiv. C8.pF CAP, 63 NPO, low ESR, ATC 6SRCW5 or equiv. C9 pf CAP, 63 NPO, low ESR, ATC 6SJW5 or equiv. L nh IND 85 Coilcraft 85HQ - NXJBB L.nH IND, 63 TOKO 63 - LL68FHNJ L3 3.9nH IND, 63 TOKO 63 - LL68FH3N9J support, contact RFMD at (+) or sales-support@rfmd.com. 9 of

20 Package Outline Drawing (dimensions in mm) Metal Land Pattern and PCB Soldermask Recommended Metal Land Pattern (dimensions in mm[in]): Recommended PCB Soldermask for Land Pattern (dimensions in mm[in]): of support, contact RFMD at (+) or

21 Ordering Information Ordering Code SZM66ZSQ SZM66ZSR SZM66Z SZM66ZPCK-EVB SZM66ZPCK-EVB SZM66ZPCK-EVB3 Description Standard 5 piece bag Standard piece reel Standard piece reel Evaluation Board.3GHz to.4 GHz Tune and 5 loose sample pieces Evaluation Board.4GHz to.5ghz Tune and 5 loose sample pieces Evaluation Board.5GHz to.7ghz Tune and 5 loose sample pieces support, contact RFMD at (+) or sales-support@rfmd.com. of