Features. Reference Design R-REF01-HB

Transcription

1 Features Reference Design Half-bridge voltage up to kv TTL-compatible signal input Single 5V to 4V supply Shoot-through protection Separate input for low and high-side switch for use with different topologies Reference Design Description The Half-Bridge Gate-Drive Power Supply Reference Design (RD) consists of a half-bridge suitable for voltages up to kv and a fully-isolated driver stage with isolated power supplies for the low-side and the high-side switching transistors. It is suitable for single gate drive supply voltages as low as +4V as well as dual gate drive supply voltages as high as +0V / -5V (30V max) with no maximum duty cycle limitations. NOTE: transistors sold separately. Delivered Board The signal ground is galvanically isolated from the power ground and can be connected to any potential, as long as it is less than.5kv with respect to the power potential (high-side and low-side). The limiting element is the gate driver IC specification. Features: Optimized for very high switching speed.5kv continuous input to output isolation High gate-drive currents (up to 0A source and sink) The RD is fitted with a SI873 gate driver, but can be used with any pin-compatible gate driver with a PWM input (SI874) or for gate driver ICs with reinforced isolation, for example the UCC50 (dual pinout layout on PCB). This RD can easily be configured for the following topologies (see application suggestions section): LLC half-bridge Asymmetric duty cycle half-bridge (forward and flyback) Active clamp half-bridge (forward and flyback) Full-bridge / phase-shifted full-bridge 3-phase B6 bridge NPC B6 bridge (additional driving circuit for NPC is required) Double pulse test Synchronous boost converter Synchronous buck converter DANGER! This board is designed to be used with voltages up to kv, only qualified personnel should work with this board. Direct contact with hazardous voltage can cause injury or death! Never leave the board operating unattended. After removing the high voltage from the board, discharge the capacitors with a suitable discharging resistor to avoid electrical shock! Caution: This reference design is built with ESD (electrostatic discharge) sensitive components. Always follow ESD prevention procedures when handling the product to avoid failures! REV.: 0/07 P-

2 Reference Design Specifications ta= 5 C,.5Vin, full load after warm up unless otherwise stated) BASIC CHARACTERISTICS Parameter Condition Min. Typ. Max. Input Voltage Con 5V 4V Input Voltage Con -> limited by C0 0V 000V Digital, U, Enable -0.5V 5.5V Logic High Input Threshold V Logic Low Input Threshold 0.8V Input Hysteresis 350mV 400mV Maximum Ratings -0.5V 5.5V Driver Section Source and Sink Current (max) 0A Total Drive Voltage positive and negative +4V 30V Propagation Delay system before gate resistors 0ns 40ns 70ns Rise and Fall Times refer to the datasheet of the gate-driver IC Voltage input to output.5kvdc Component Placement T T CON 000V Max +VBridge -VBridge C CON3 FD High Side Switch R4 IC6 C3 C R6 C4 IC R8 R5 R4 R5 R9 R TTLcompatible Input R R6 LED IC IC7 C C C6 C7 R0 CON5 Switch Node R9 U R5 C3 C4 R C7 R C5 R R3 Low Side Switch IC4 C9 C8 IC8 LED4 R3 C C9 D R IC5 R7 C8 R7 R0 R6 IC3 R8 LED R3 FD D R4 LED3 C5 FB C6 CON4 CON Signal High Side Signal Low Side ABLE 5V to 4V continued on next page P- REV.: 0/07

3 DC/DC Reference Converter Design Specifications ta= 5 C,.5Vin, full load after warm up unless otherwise stated) Component List Part IC IC3 T T Note: CON CON CON3 CON4 CON5 U Description DC/DC isolated converter for high-side gate-driver. Depending on the transistor type, fit the appropriate DC/DC converter (please refer to pages P-0 to P-). DC/DC isolated converter for low-side gate-driver. Depending on the transistor type, fit the appropriate DC/DC converter (see table ). High-side switching transistor (not supplied). Read important notice below. Low-side switch transistor (not supplied). Read important notice below. The transistors are placed on the edge of the PCB so that they are easy to mount to a heatsink. They can also be mounted inverted on the bottom side of the PCB. Both TO47-3L and TO47-4L format transistors can be used by using the appropriate hole set. Connector for logic and driver supply. Connect a 5V, 8V, 4V or 36V DC supply here. +V bridge voltage: connect a positive voltage up to kv in respect to power-gnd to this connector. -V bridge voltage: power-gnd Enable: a high signal enables the driver signals. Place the jumper on the connector to enable the signals permanently Switching node of the half-bridge Signal high-side: TTL-compatible input for the high-side transistor Signal low-side: TTL-compatible input for the low-side transistor Following DC/DC models are suitable for use with this reference design Table Model Power [W] Output Voltage [V] Application RP005D* +0/-5 SiC MOSFETs RP503D* +5/-3 SiC MOSFETs RP509D* +5/-9 IGBTs RP509D +5/-9 IGBTs RP06S* +6 GaN RPS + Cascode/Si MOSFET *These models are included in the reference design Truth table (with IC SI873 mounted): Input Output U Enable High-side Gate Low-side Gate Comment L L H L L L H H L H H L H H L H H H L L Invalid state X X L L L Device is disabled REV.: 0/07 P-3

4 Reference Design Specifications ta= 5 C,.5Vin, full load after warm up unless otherwise stated) NOTE: TRANSISTORS SOLD SEPARATELY 3-Pin 4-Pin C C IGBT (N-type) G G recommended gate-driver DC/DC: RP509D E K E TO47-3L Package D D SiC MOSFET (N-type) G S G S K recommended gate-driver DC/DC RP005D or RP503D GaN HEMT (normally off) G D G D recommended gate-driver DC/DC RP06S TO47-4L Package S S K Important: using three pin or four pin TO47 packages: TO47-4L packages can be used without any modification of the PCB. The Kelvin source pin is already connected to the gate-driver ground. TO47-3L packages however require a minor modification to join the gate-driver ground to the source pin ground. This can be done by soldering 0Ω resistors across R9 and R0 or by making a solder bridge between the source and Kelvin source pads (recommended for lowest gate inductance). T T High-side Switch Low-side Switch P-4 REV.: 0/07

5 DC/DC Reference Converter Design Specifications ta= 5 C,.5Vin, full load after warm up unless otherwise stated) Schematic V Supply D PMEG FB CON IC5 R-78C Vin +Vout C6 0R 4A 806 C5 0uF 4.7uF GND V Supply D PMEG600 +V +5V IC8-A L78L05 3 +Vin +Vout C8 C9 uf GND uf 6V 5V 4 IC8-B in BNC -A R0 in U-A 0K BNC 00mW +5V 3 4 in in IC7-A VCCI GND INA INB R3 0K 00mW LED4 UCC50 VDDA 6 VDDA 5 OUTA out 4 VSSA VDDB GNDA +V VDDA VDDA Supply +V C3 R5 IC RPxx uf K LED R Vin +Vout 0K C 50mW 4 uf Gnd C4 00mW 5V -Vin 3 -Vout R6 uf 0 LED3 K DRIVER 06 SOURCE 50mW HS GNDA R4 0R 00mW VDDA IC6 ZXGD3006E6TA 6 VDDA C R6 00nF C6 K0 +5V 00nF 00mW IC Si873 C 3 3 VDDI uf C7 6 VDDA uf GNDA GNDA 4 5 VOA VDDB 4 VIA GNDA VDDB VIB GNDA ZXGD3006E6TA CON4 VDDB 6300 R9 C4 en 5 ABLE C3 uf 0K 00nF R 9 +5V GNDB 00mW 0K 8 VDD 0 GNDB out VOB 00mW C5 R3 uf K0 00mW R 0K 00mW 3 GNDB VDDB VDDB Supply R5 R3 0K 00mW 4 IC4 6 4 R4 R 007 W R5 3R3 007 W R R 007 W R 3R3 007 W CON T D R 0R 00mW GS 4 G 5 KS 3 R8 S 0K 00mW R9 CON5 0R DRIVER SOURCE 00mW HS T D R6 0R 00mW GS 4 G 5 KS 3 S R7 0K 00mW C0 uf kv R 0K 00mW VDDB 5 en DISABLE VSSB +5V 8 VCCI OUTB 6 DT C7.nF 9 0 GNDB out C uf 5V 0 +V IC3 +Vin -Vin RPxx +Vout Gnd -Vout C8 uf 5 4 C9 3 uf GNDB R7 K 06 50mW R8 K 06 50mW LED 0R 00mW R0 0R 00mW CON Description: The reference design board requires a single supply voltage with a range of 5-4V. IC5 creates the regulated V supply for IC and IC3. IC generates the isolated high-side gate-driver supply voltage. Choose the appropriate DC/DC converter from the selection provided. IC3 generates the isolated low-side gate-driver supply voltage. Choose the appropriate DC/DC converter from the selection provided. IC8 creates a +Vcc rail required for the gate driver. IC isolates the control signals and level shifts the TTL input to the gate-drive voltages. IC7 can be mounted instead of IC if reinforced isolation is required. IC4 and IC5 amplify the maximum gate-drive current to ±0A. R4 and R5 are not fitted. Zero Ω resistors can be mounted if IC4 and IC5 are not required (for example GaN transistors). The input GND is galvanically isolated from the high-side GNDA and the low-side GNDB. For single-ended designs, it is recommended to connect GND to Power-GND (CON3) with a star-earth configuration. For full-bridge configurations, couple GND to Power-GND with Y-Capacitors to avoid generating high potentials caused by common mode currents. R5, R6, R7 and R8 are not fitted. The positions can be used to add dummy loads for the power supplies if needed, for example, under very light load conditions or low switching frequencies. Alternately R6 and R8 can be used to allow single-output voltage DC/DC converters to be used by connecting -Vout to the gate-driver ground. Configuration R5, R7 R6, R8 Dual Output DC/DC, Normal Load (standard) Not required Not required Dual Output DC/DC, Light Load kω kω Single Output DC/DC, Normal Load Not required Zero Ω Single Output DC/DC, Light Load kω Zero Ω R and R4 control the turn-on slew rate. Ω is fitted as standard. R and R5 control the turn-off slew rate. 3.3Ω is fitted as standard. These 007 package resistors are made to withstand highly pulsed loads. Gate currents up to 0A are possible. REV.: 0/07 P-5

6 Reference Design Specifications ta= 5 C,.5Vin, full load after warm up unless otherwise stated) Layout Layer with components T T CON 000V Max +VBridge -VBridge C CON3 FD High Side Switch R4 IC6 C3 C R6 C4 IC R8 R5 R4 R9 R R5 TTL Compatible Input R R6 LED IC IC7 C C C6 C7 R0 CON5 Switch Node R9 U R5 C3 C4 R C7 R C5 R R3 Low Side Switch IC4 C9 C8 IC8 LED4 R3 C C9 D R IC5 R7 C8 R7 R0 R6 IC3 R8 LED R3 FD D R4 LED3 C5 FB C6 CON4 CON Signal High Side Signal Low Side ABLE 5V to 4V Layer P-6 REV.: 0/07

7 DC/DC Reference Converter Design Specifications ta= 5 C,.5Vin, full load after warm up unless otherwise stated) Layer 3 Bottom View REV.: 0/07 P-7

8 Reference Design Specifications ta= 5 C,.5Vin, full load after warm up unless otherwise stated) BOM Part Name/Number Description Manufacturer Part Number Manufacturer Qty. Comps FERRITE BEAD 0Ω 806 LN Wurth FB BNC_50OHM_6.6mm_THD CONN BNC JACK STR 50Ω PCB TE Connectivity U CµF-kV-FOIL-3mmX3mm CAP FILM µf 0% kvdc RADIAL R7QR400400K KEMET C0 CµF--6V CAP CER µf 6V X7R CCKRX7R7BB05 Yageo C9 CµF--5V CAP CER µf 5V X7R TMK07B705KA-T Taiyo Yuden C8 CµF-- µf ±0% X7R MLCC CAPACITOR UMK07AB705KA-T Taiyo Yuden 8 C3 C4 C7 C8 C9 C C3 C5 C.nF-- CAP CER 00pF X7R CCKRX7R9BB Yageo C7 C3M0000K-HYBRID 000V 0mΩ G3 SIC MOSFET C3M0000K C4.7µF µF ±0% X7R MLCC CAPACITOR 06 Cree/ Wolfspeed T T UMK36AB7475KL-T Taiyo Yuden C5 C0µF-0- CAP CER 0µF X7R 0 UMK35AB706KMHT Taiyo Yuden C6 CµF-0-5V CAP CER µf 5V X7R 0 TMK35B76KM-PR Taiyo Yuden C C C00nF-- 0.0µF ±0% X7R CERAMIC CAPACITOR SURFACE MOUNT MLCC CC04M5RACTU Kemet 3 CONNECTOR_X_5.5mm MOLEX MINI-FIT JR Molex CON CONNECTOR_6.35mmX0.83mm FASTON 50 PCB TAB TPBR 6.35 x 0.83mm L=5.8mm TE Connectivity 3 C6 C C4 CON CON3 CON5 HEADER_X.54mm_WURTH CONN HEADER POS Wurth CON4 L78L05ABUTR IC REG LINEAR 5V 00mA SOT89-3 L78L05ABUTR STMicroelectronics LED--GRE-3.V LED GRE CLEAR SMD 50060GS75000 Wurth 4 PMEG600-SOD33 DIODE SCHOTTKY 60V A SOD33F PMEG600 IC8 LED LED LED3 LED4 PMEG600CEJ NXP D D R0- RES SMD 0.0Ω JUMPER /0W RCJR-070RL Yageo P-8 REV.: 0/ R9 R0 R4 R5 R R6 RK0- RES SMD kω % /0W RCFR-07KL Yageo R3 R6 R3E3-007-MELF RES SMD 3.3Ω % W 007 MMB0070C3308FB00 Vishay Beyschlag R R5 RP005D CONV DC/DC W 5VIN +0/-5VOUT RP005D RECOM IC IC3 R0K0- RES SMD 0kΩ % /0W RCFR-070KL Yageo RE0-007-MELF RES SMD Ω % W 007 MMB0070C09FB00 Vishay Beyschlag R47K-06 RES SMD 47kΩ % /4W 06 RC06FR-0747KL Yageo 4 9 R R7 R8 R9 R0 R R R3 R4 R3 R R4 R5 R6 R7 R8 R-78C-.0 CONV DC/DC A V OUT SIP VERT R-78C-.0 RECOM IC5 SI873GBD-IS OPTOISO.5kV GATE DRVR 6SOIC SI873GBD-IS Silicon Labs IC UCC50 OPTOISO 5.7kV GATE DRVR 6SOIC UCC50ADW ZXGD3006E6TA IC GATE DRVR IGBT/MOSFET SOT6 ZXGD3006E6TA Texas Instruments Diodes Incorporated IC7 IC4 IC6

9 DC/DC Reference Converter Design Specifications ta= 5 C,.5Vin, full load after warm up unless otherwise stated) Typical Switching Waveforms Ch.: Low-side Gate Source Voltage Ch.: Low-side Drain Source Voltage Switching Voltage: 000VDC Transistor: CM00070D-ND IC/IC3: RP005D Switching Frequency: 50kHz Measured Switching Slew Rate: 65kV/µs Measured Switching Time: 5ns REV.: 0/07 P-9

10 Reference Design Specifications ta= 5 C,.5Vin, full load after warm up unless otherwise stated) Application Suggestion +V out Con L Synchronous Boost +Vout > +Vin C Con +V out Con L Synchronous Buck +Vout < +Vin C Con Con L out +V out, iso Con C out Con Phase Shifted/ Full-bridge Converter Con P-0 REV.: 0/07

11 DC/DC Reference Converter Design Specifications ta= 5 C,.5Vin, full load after warm up unless otherwise stated) Con C +V out, iso Half-bridge Flyback Converter Con C out +V out, iso L out Con C C out Half-bridge Forward Converter Con +V out, iso Con L r C out Half-bridge LLC Converter Con C r REV.: 0/07 P-

12 Reference Design Specifications ta= 5 C,.5Vin, full load after warm up unless otherwise stated) Con Con Con 3 Phase Motor Driver Con Con Con NC DUT Con L Double Pulse Tester (DUT can be a MOSFET or diode) Con The product information and specifications may be subject to changes even without prior written notice.the product has been designed for various applications; its suitability lies in the responsibility of each customer. The products are not authorized for use in safety-critical applications without RECOM s explicit written consent. A safety-critical application is an application where a failure may reasonably be expected to endanger or cause loss of life, inflict bodily harm or damage property. The applicant shall indemnify and hold harmless RECOM, its affiliated companies and its representatives against any damage claims in connection with the unauthorized use of RECOM products in such safety-critical applications. P- REV.: 0/07