RxP-1000 Series. SILETZ BSI APD Photoreceivers. Features. Applications

Transcription

1 Siletz BSI RxP-000 Series APD Photoreceivers SILETZ BSI APD Photoreceivers Features MHz- and GHz-Class Receivers with High-Gain, Low Excess Noise NIR Single-Carrier Multiplication APDs (SCM-APDs) InGaAs/InAlAs single-carrier multipli cation APD (SCM-APD) Integrated low-noise transimpedance amplifier nm spectral response High responsivity Low excess noise High bandwidth High gain 5 to +75 C operating case temperature Applications Range finding LADAR/LIDAR Fluorescence measurements Free-space optical communication systems Spectroscopy, electrophoresis, chromatography Ultra-fast pulse and transient measurements Model RDP-NJAF: 200 µm APD, 350 MHz Model RIP-NJAF: 200 µm APD, GHz Model RIP-JJAF: 75 µm APD, 2.2 GHz Model R2P-JCAA: 75 µm APD,.5 GHz TO-46 Voxtel offers high-sensitivity photoreceivers based on its Siletz single-carrier multiplication APDs (SCM-APDs) in the RXP-000 product series. High bandwidth as well as 75 μm and 200 μm optical areas make these ideal for laser rangefinders, laser designators, free space optical communication, optical instrumentation, and LADAR/LIDAR. Voxtel s VFP-000 Series of Siletz SCM-APDs integrates lownoise with transimpedance amplifiers (TIAs). Voxtel s SCM- APDs offer extremely low excess-noise NIR SWIR APDs, allowing the receiver to operate at high avalanche gain, boosting the optical signal over the amplifier noise level without the degrading effects of avalanche-induced excess noise. These photoreceivers are the most sensitive receivers available on the market today. A singlestage thermoelectric cooler (TEC) is included to eliminate temperatureinduced gain variations and allow optimal performance over the range of application environments. Standard fiber pigtail options for the 75 µm receivers include 62.5/25 (0.37 NA) graded-index and 05/25 (0.37 NA) step-index multi-mode fibers; other fiber options can be custom ordered. Optionally available with the photoreceivers are Support Electronics Modules, which provide power conditioning and TEC control. Voxtel, Inc., 5985 NW Schendel Avenue, #200, Beaverton, OR 97006, T , F

2 APD Photoreceivers Siletz BSI RxP-000 Series S i l e t z S e r i e s A P D P h o t o r e c e i v e r s 2 TO-46 Package 5.08 mm Ø 5.3 mm Ø 4.22 Ø BOTTOM VIEW Ø.50 mm 3 4 Ø 0.45 mm 5 TOP VIEW header only 6.35 mm Pinout ) DOUT 2) VDD 3) V+ APD 4) DOUT B 5) GND.37 SIDE VIEW with cap 2.70 Ø 6.50 mm 7.4 mm N/C N/C TO-8 Package Gnd +APD Gnd 2.39 ±0.5mm 6.35 mm SIDE VIEW with cap 0.6 mm Ø 5.25 mm Ø.50 mm BOTTOM VIEW Fiber-coupled TO-8 Package Ø 3.8 mm TSense TEC+ TSense+ (B/C) TSense (E) VCC Out+ Out TEC 5.08 mm 2.54 mm Ø 0.45 mm 6.65 ±0.4mm 0.38 ±0.03mm ) Gnd 2) +APD 3) TEC+ 4) TSense 5) TEC 6) TSense+ 7) Out 8) Gnd 9) Out+ 0) V CC +3.3V ) N/C 2) N/C 2.54 mm 0.6 mm 0.70 mm Ø 8.00 mm Ø 5.25 mm 2.83 mm 3.6 mm 000 mm Ø 6.50 mm BOTTOM VIEW SIDE VIEW TOP VIEW Voxtel SCM-APD Responsivity Voxtel SCM-APD QE Wavelength [nm] Spectral responsivity curve and quantum efficiency at gain M =, T = 295 K. 200-µm SCM-APD. Noise Equivalent Power [nw] RVC-NJAF RYC-NJAF RDC-NJAF RDP-NJAF RIP-NJAF RIP-JJAF (75µm) 0.00E+08.00E+09.00E+0 Bandwidth [Hz] Standard receiver configurations with typical NEP valves and bandwidths Voxtel, Inc., 5985 NW Schendel Avenue, #200, Beaverton, OR 97006, T , F

3 Siletz BSI RxP-000 Series APD Photoreceivers M o d e l R D P - N J A F Specifications S i l e t z S e r i e s A P D P h o t o r e c e i v e r µ m, M H z Parameter Min Typical Max Units Spectral Range, λ nm Active Diameter 200 μm Bandwidth 350 MHz APD Operating Gain, M Receiver Responsivity at M=40 400/560 kv/w at 064/550 nm Noise Equivalent Power at M=40 0/8 nw at 064/550 nm Low Frequency Cutoff i 30 khz APD Breakdown Voltage, V BR T = 298 K TEC T 40 T = 298 K TEC Supply.8/.9 A/ V Temp Sensing Diode Voltage and V/K ii mv/k 0.5 V TIA Power V Output Impedance iii Ω Overload/Saturation Power iv 00 µw Maximum Instantaneous 5 mw Input Power v Window Thickness mm 3 i - 3 d B, 4 0 µ A i n p u t i i S o u r c i n g 0 µ A, T = K i i i S i n g l e - e n d e d ; 5 0 Ω d i f f e r e n t i a l i v n m s i g n a l w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M=0 v 0 n s, n m s i g n a l a t a 2 0 H z P R F w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M=0 Receiver 550 nm [kv/w] M = 0 M = Frequency [MHz] Voxtel, Inc., 5985 NW Schendel Avenue, #200, Beaverton, OR 97006, T , F

4 APD Photoreceivers Siletz BSI RxP-000 Series M o d e l R I P - N J A F S i l e t z S e r i e s A P D P h o t o r e c e i v e r µ m, G H z Specifications Parameter Min Typical Max Units Spectral Range, λ nm Active Diameter 200 μm Bandwidth GHz APD Operating Gain, M Receiver Responsivity at M=0 i 32/40 kv/w at 064/550 nm Noise Equivalent Power at M=40 20/6 nw at 064/550 nm Low Frequency Cutoff ii 65 khz 4 APD Breakdown Voltage, V BR T = 298 K TEC T 40 T = 298 K TEC Supply.8/.9 A/ V Temp Sensing Diode Voltage and V/K iii mv/k 0.5 V TIA Power V Output Impedance iv Ω Overload/Saturation Power v 00 µw Max Instantaneous Input Power vi 5 mw Window Thickness mm Window Transparency 95/98% 064/550 nm i 0 M H z, d B m s i g n a l i i 3 d B, 4 0 µ A i n p u t i i i S o u r c i n g 0 µ A, T=298 K i v S i n g l e - e n d e d ; 0 0 Ω d i f f e r e n t i a l v n m s i g n a l w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M=0 v i 0 n s, n m s i g n a l a t a 2 0 H z P R F w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M=0 Receiver nm [kv / W] 00 0 M=0 M= ,000 0,000 Frequency [MHz] Voxtel, Inc., 5985 NW Schendel Avenue, #200, Beaverton, OR 97006, T , F

5 Siletz BSI RxP-000 Series APD Photoreceivers M o d e l R I P - J J A F Specifications S i l e t z S e r i e s A P D P h o t o r e c e i v e r 7 5 µ m, 2. 2 G H z Parameter Min Typical Max Units Spectral Range, λ nm Active Diameter 75 μm Bandwidth 2.2 GHz APD Operating Gain, M Receiver Responsivity at M=40 88/5 kv/w at 064/550 nm Noise Equivalent Power at M=40 0/8 nw at 064/550 nm Low Frequency Cutoff i 65 khz APD Breakdown Voltage, V BR ii V TEC T 40 T = 298 K TEC Supply.8/.9 A/ V Temp Sensing Diode Voltage and V/K iii mv/k 0.5 V TIA Power V Output Impedance iv Ω Overload/Saturation Power v 00 µw Max Instantaneous Input Power vi mw Window Thickness mm Window Transparency 95/98% 064/550 nm 5 i - 3 d B, 4 0 µ A i n p u t i i T=295 K i i i S o u r c i n g 0 µ A, T = K i v S i n g l e - e n d e d ; 0 0 Ω d i f f e r e n t i a l v n m s i g n a l w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M=0 v i 0 n s, n m s i g n a l a t a 2 0 H z P R F w i t h a n A P D m u l t i p l i c a t i o n g a i n o f M=0 Receiver nm [kv/w] 00 0 M = 0 M = ,000 0,000 Frequency [MHz] Voxtel, Inc., 5985 NW Schendel Avenue, #200, Beaverton, OR 97006, T , F

6 APD Photoreceivers Siletz BSI RxP-000 Series Ordering Informat ion For VFP S erie s APD Pr oduc t s R - P Device Type Amplifier Detector Diameter Package Option Lens Option Revision R=Photoreceiver P=Siletz C=TO- 46 D=580MHz TIA J=75μm A=Flat Window SCM-APD J=TO-8 with I=2.5GHz TIA N=200μm -Stage TEC Q=MM 62.5/25μm 2=.7GHz TIA R=MM 05/25μm S=MM 200/25µm Not all combinations of product features are available. Please contact Voxtel for specific ordering information and parts availability. 6 C a u t i o n D u r i n g A P D O p e r a t i o n If an APD is operated above its breakdown voltage without some form of current protection, it can draw enough current to permanently damage the device. To guard against this, the user can add either a protective resistor to the bias circuit or a currentlimiting circuit in the supporting electronics. The breakdown voltage of an APD is dependent upon its temperature: the breakdown voltage decreases when the APD is cooled. Consequently, a reverse bias operating point that is safe at room temperature may put the APD into breakdown at low temperature. The approximate temperature dependence of the breakdown voltage is published in the spec sheet for the part, but caution should be exercised when an APD is cooled. Low-noise readout circuits usually have high impedance, and an unusually strong current pulse from the APD could generate a momentary excessive voltage that is higher than the readout s supply voltage, possibly damaging the input to the amplifier. To prevent this, a protective circuit should be connected to divert excessive voltage at the inputs to a power supply voltage line. As noted in the specification, another consideration is that the APD gain changes depending on temperature. When an APD is used over a wide temperature range, it is necessary to use some kind of temperature compensation to obtain operation at a stable gain. This can be implemented as either regulation of the applied reverse bias according to temperature, feedback temperature control using a thermoelectric cooler (TEC) or other refrigerator, or both. Upon request, Voxtel will gladly assist customers in implementing the proper controls to ensure safe and reliable operation of APDs in their system. Voxtel Literature No. RxP-000 Series, Version date: 07/202 Voxtel makes no warranty or representation regarding its products specific application suitability and may make changes to the products described without notice.