Planar Back (Tunnel) Diodes MBD Series

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Elfreda Pearson
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Description The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and

Unlike the standard tunnel diode I P is minimized for detector operation and offered in five nominal values with varying degrees of

The back detector is generally operated with zero bias and is known for its exellent temperature stability and fast video rise times.

Storage Temperature -65 C to +25 C Soldering Temperature Chip Packaged See chip assembly instructions on page 8 +230 C for 5 seconds

1 Description The MDB series of back (tunnel) diodes are fabricated on germanium substrates using passivated, planar construction and gold metallization for reliable operation up to + C. Unlike the standard tunnel diode I P is minimized for detector operation and offered in five nominal values with varying degrees of sensitivity and video impedance. The back detector is generally operated with zero bias and is known for its exellent temperature stability and fast video rise times. Features Zero bias operation Exellent temperature stability Low Video Impedance Screening per MIL-PRF-9500 and MIL-PRF available. Absolute Maximum Ratings Parameters Rating Input Power +4 dbm CW or Pulsed in a tuned detector Operating Temperature -65 C to + C Storage Temperature -65 C to +25 C Soldering Temperature Chip Packaged See chip assembly instructions on page C for 5 seconds (must be hand soldered) Chip Electrical Specifications, T A = 25 C Model MIN μa I P C J γ R V I P / I V V R V F MAX MAX TYP TYP MIN MIN MAX Package μa pf mv / mw Ω mv mv MBD57-C8 0.30, C8 MBD2057-C C8 MBD3057-C C8 MBD4057-C C8 MBD5057-C C8 Test Conditions V R = V V F = MHz P IN = -20 dbm R L = KΩ I R = 500 μa I F = 3 ma

2 Back Diode Perameters Planar Back (Tunnel) Diodes Diode Equivalent Circuit I 3mA L S PACKAGE V v V R I V V F V Cp R j C j I p 500μA R S R V R S + R j C T =C p + C MHz Package Electrical Specifications, T A = 25 C Model MIN μa I P C T γ MAX μa MAX pf TYP mv / mw R V TYP Ω I P / I V MIN V R MIN mv V F MAX mv Package MBD57-E28 / 28X 0.40, E28 / 28X MBD57-H , H20 MBD57-T , T54 MBD57-T , T80 MBD2057-E28 / 28X E28 / 28X MBD2057-H H20 MBD2057-T T54 MBD2057-T T80 MBD3057-E28 / 28X E28 / 28X MBD3057-H H20 MBD3057-T T54 MBD3057-T T80 MBD4057-E28 / 28X E28 / 28X MBD4057-H H20 MBD4057-T T54 MBD4057-T T80 MBD5057-E28 / 28X E28 / 28X MBD5057- H H20 MBD5057- T T54 MBD5057- T T80 Test Conditions V R = V V F= MHz P IN = -20 dbm R L = KΩ F = GHz I R = 500 μa I F = 3 ma 2

3 Typical Performance, T A = 25 C Video Resistance vs. Input Power F = GHz MBD R v (Ω) MBD _ 30 _ 20 _ 0 + Video Impedance & Sensitivity vs. Peak Current 0 R L = KΩ P IN = -20 dbm γ (mv/mw) 500 γ R V (Ω) R V I P (μa) 3

4 Typical Performance, T A = 25 C, Planar Back (Tunnel) Diodes R L = KΩ Output Voltage Vs. Input Power MBD57 MBD2057 MBD3057 MBD4057 MBD GHz RF Detector Test Circuit TUNER 4

5 Typical Performance, T A = 25 C, MDB2057 Output Voltage vs. Input Power R L = KΩ R L = KΩ R L = 500Ω R L = Ω R L = 50Ω R L = Ω Output Voltage vs. Temperature R L = KΩ + C 55 C R L = Ω

6 Typical Performance, T A = 25 C, MDB5057 Output Voltage vs. Input Power R L = KΩ R L = KΩ R L = Ω R L = 50Ω R L = Ω Output Voltage vs Temperature + C 55 C R L = KΩ R L = KΩ R L = Ω

7 Outline Drawings C8 6 [0.406] 4 [0.356] SQ. Pad 3 Pad Pad 2 Pad 4 Anode Pad 4 Pls [0.025] Bond only on crosshatched area (non-hermetic) 55 [.397] 45 [.43] 85 [2.59] 75 [.905] Cathode Dot Epoxy 50 [.270] Max. 6 [52] 4 [0.2] 33 [0.838] 27 [0.686] Gold Metalization Cathode 6 [0.406] 2 [0.305] 40 [.06] Min. Bottom View E28 (non-hermetic) Cut lead is Cathode E28X (non-hermetic) 78 [4.52] 62 [4.5] Cathode Dot [2.540] Min. 2 Pls 25 [0.635] 5 [0.38] 95 [2.43] 85 [2.59] 50 [.270] 40 [.06] Epoxy 50 [.270] Max. 50 [.270] 40 [.06] 30 [0.762] Max. 95 [2.43] 85 [2.59] Epoxy 25 [0.635] 5 [0.38] 5 [0.38] 8 [0.203] 5 [27] 3 [0.076] 4 [0.356] Max. 20 [0.508] [0.254] 30 [0.762] 20 [0.508] 8 [0.203] 4 [0.2] H20 (hermetic) 2 [2.59] 8 [2.057] Dia 23 [0.584] 7 [0.432] Cut lead is Cathode 8 [0.203] 4 [0.2] 4 [2.642] 92 [2.337] Square 6 [52] 3 [0.076] 30 [3.302] Min. 2 Pls 35 [0.889] 25 [0.635] 7

8 Outline Drawings (Continued) Planar Back (Tunnel) Diodes T80 (hermetic) 24 [3.50] Dia. 8 [2.997] T54 (hermetic) 86 [2.84] 78 [.98] Dia. 27 [0.686] Max. Cathode (T80) Body 83 [2.8] Dia. 77 [.956] 65 [.65] 55 [.397] 2 [0.305] [0.254] Cathode (T54) Body 44 [.8] 34 [0.864] 52 [.32] 48 [.29] Dia. CHIP ASSEMBLY The germanium planar back (tunnel) diode is sensitive to mechanical pressure and high temperatures. Die attach: Conductive epoxy only with maximum curing temperatue of +25 C Wire Bond:0.7 mil Gold wire and thermo-compression wedge bond within the following: Stage Temperature: +55 C maximum for 20 seconds max Tip Temperature: +60 C maximum Bonding Pressure: 20 grams maximum Bonding is performed on the larger diameter offset bonding pad (see figure ) and not over the junction. JUNCTION Aeroflex / Metelics Aerofl ex Microelectronic Solutions 975 Stewart Drive, Sunnyvale, CA TEL: Fax: GOLD BOND WIRE figure THERMOCOMPRESSION WEDGE BOND sales@aeroflex-metelics.com Aerofl ex / Metelics, Inc. reserves the right to make changes to any products and services herein at any time without notice. Consult Aerofl ex or an authorized sales representative to verify that the information in this data sheet is current before using this product. Aerofl ex does not assume any responsibility or liability arising out of the application or use of any product or service described herein, except as expressly agreed to in writing by Aerofl ex; nor does the purchase, lease, or use of a product or service from Aerofl ex convey a license under any patent rights, copyrights, trademark rights, or any other of the intellectual rights of Aerofl ex or of third parties. Copyright 3 Aerofl ex / Metelics. All rights reserved. Our passion for performance is defi ned by three attributes represented by these three icons: solution-minded, performance-driven and customer-focused. A7077 (-)

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