Cree EZ900-n Gen 2 LEDs Data Sheet (Cathode-up) CxxxEZ900-Sxx000-2

Transcription

1 Cree EZ9-n Gen 2 LEDs Data Sheet (Cathode-up) CxxxEZ9-Sxx-2 Cree s EZBright LEDs are the next generation of solid-state LED emitters that combine highly efficient InGaN materials with Cree s proprietary optical design and device submount technology to deliver superior value for highintensity LEDs. The optical design maximizes light extraction efficiency and enables a Lambertian radiation pattern. Additionally, these LEDs are die-attachable with conductive epoxy, solder paste or solder preforms, as well as the flux eutectic method. These vertically structured, low forward voltage LED chips are approximately 7 microns in height. Cree s EZ chips are tested for conformity to optical and electrical specifications. These LEDs are useful in a broad range of applications such as general illumination, automotive lighting, and LCD backlighting. FEATURES EZBright LED Technology» 38 mw min & 46 nm» 34 mw min - 47 nm Lambertian Radiation Conductive Epoxy, Solder Paste or Preforms, or Flux Eutectic Attach Low Forward Voltage Dielectric Passivation across Epi Surface APPLICATIONS General Illumination» Aircraft» Decorative Lighting» Task Lighting» Outdoor Illumination White LEDs LCD Backlighting Projection Displays Automotive CxxxEZ9-Sxx-2 Chip Diagram Top View Bottom View Die Cross Section Data Sheet: CPR3DX Rev. B EZBright LED 88 x 88 μm 2 Dielectric Passivation Cathodes (-) 5 x 5 μm 2 t = 7 μm Gold Bond Pads (2) Backside Metalization Anode (+) 3 μm AuSn Subject to change without notice.

2 Maximum Ratings at T A = 25 C Note CxxxEZ9-Sxx-2 DC Forward Current ma Peak Forward Current (/ duty khz) 25 ma LED Junction Temperature 5 C Reverse Voltage 5 V Operating Temperature Range -4 C to + C Storage Temperature Range -4 C to +25 C Typical Electrical/Optical Characteristics at T A = 25 C, If = 35 ma Note 2 Part Number Forward Voltage (V f, V) Reverse Current [I(Vr=5V), μa] Full Width Half Max (λ D, nm) Min. Typ. Max. Max. Typ. C45EZ9-Sxx C46EZ9-Sxx C47EZ9-Sxx Mechanical Specifications CxxxEZ9-Sxx-2 Description Dimensions Tolerance P-N Junction Area (μm) 85 x 85 ± 35 Chip Area (μm) 88 x 88 ± 35 Chip Thickness (μm) 7 ± 25 Top Au Bond Pad (μm) - Qty. 2 5 x 5 ± 25 Au Bond Pad Thickness (μm) 3. ±.5 Back Contact Metal Area (μm) 88 x 88 ± 35 Back Contact Metal Thickness (μm) 3. ±.5 Notes:. Maximum ratings are package-dependent. The above ratings were determined using a 3.45 x 3.45 mm SMT without an encapsulant for characterization. Ratings for other packages may differ. The junction temperature should be characterized in a specific package to determine limitations. Assembly processing temperature must not exceed 325 C (< 5 seconds). See Cree EZBright Applications Note for assembly-process information. 2. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled and operated at 35 ma within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given are within the range of average values expected by the manufacturer in large quantities and are provided for information only. All measurements were made using a Au-plated TO39 header without an encapsulant. Optical characteristics were measured in an integrating sphere using Illuminance E. 2 Maximum Forward Current (ma) Rth j-a = C/W Rth j-a = 5 C/W Rth j-a = 2 C/W Rth j-a = 25 C/W Ambient Temperature ( C) Copyright 28-2 All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ9-n and EZ are trademarks of 2 CPR3DX Rev. B Durham, NC USA Tel: Fax:

3 Standard Bins for CxxxEZ9-Sxx-2 LED chips are sorted to the radiant flux and dominant wavelength bins shown. A sorted die sheet contains die from only one bin. Sorted die kit (CxxxEZ9-Sxx-2) orders may be filled with any or all bins (CxxxEZ9-xxx-2) contained in the kit. All radiant flux and dominant wavelength values shown and specified are at If = 35 ma. Radiant flux values are measured using Au-plated TO39 headers without an encapsulant. C45EZ9-S mw 42 mw 4 mw 38 mw C45EZ C45EZ C45EZ C45EZ C45EZ C45EZ C45EZ C45EZ C45EZ C45EZ9-3-2 C45EZ9-3-2 C45EZ C45EZ C45EZ C45EZ C45EZ nm nm 45 nm nm 455 nm C46EZ9-S mw 42 mw 4 mw 38 mw C46EZ C46EZ C46EZ C46EZ C46EZ C46EZ C46EZ C46EZ C46EZ C46EZ9-3-2 C46EZ9-3-2 C46EZ C46EZ C46EZ C46EZ C46EZ nm nm 46 nm nm 465 nm Copyright 28-2 All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ9-n and EZ are trademarks of 3 CPR3DX Rev. B Durham, NC USA Tel: Fax:

4 Standard Bins for CxxxEZ9-Sxx-2 (continued) 34 mw C45EZ9-S34-2 C45EZ9-3-2 C45EZ C45EZ C45EZ nm nm 45 nm nm 455 nm C46EZ9-S34-2 C46EZ9-3-2 C46EZ C46EZ C46EZ mw 455 nm nm 46 nm nm 465 nm C47EZ9-S mw 4 mw 38 mw 34 mw C47EZ C47EZ C47EZ C47EZ C47EZ C47EZ9-3-2 C47EZ9-3-2 C47EZ C47EZ C47EZ C47EZ C47EZ C47EZ9-3-2 C47EZ C47EZ C47EZ nm nm 47 nm nm 475 nm Copyright 28-2 All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ9-n and EZ are trademarks of 4 CPR3DX Rev. B Durham, NC USA Tel: Fax:

5 Characteristic Curves, T A = 25 C This is a representative measurement for the EZ9 LED product. Actual curves will vary slightly for the various radiant flux and dominant wavelength bins. If (ma) Forward Current vs. Forward Voltage Vf (V) Relative Light Intensity (%) Relative Light Intensity Vs Junction Temperature Junction Temperature ( C) Relative Intensity vs. Forward Current Shift Vs Junction Temperature 3 6 Relative Intensity If (ma) Shift (nm) Junction Temperature ( C) vs. Forward Current Voltage Shift Vs Junction Temperature DW Shift (nm) Voltage Shift (V) If (ma) Junction Temperature ( C) Copyright 28-2 All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ9-n and EZ are trademarks of 5 CPR3DX Rev. B Durham, NC USA Tel: Fax:

6 Radiation Pattern This is a representative radiation pattern for the EZBright Power Chip LED product. Actual patterns will vary slightly for each chip. Copyright 28-2 All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are registered trademarks, and EZBright. EZ9-n and EZ are trademarks of 6 CPR3DX Rev. B Durham, NC USA Tel: Fax: