RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
|
|
- Marian Maxwell
- 5 years ago
- Views:
Transcription
1 Electrical Specifications, TA =, Vcc = V ltra Wide Band Low Noise Amplifier.~ Features Gain: Typical Noise Figure:. Typical Output power m typical High P: m Full Band Supply Voltage: V Parameter in. Typ. ax. in. Typ. ax. in. Typ. ax. nits Frequency Range. Gain Gain Flatness ±. ±. ±. ±. ±. Gain Variation Over Temperature (- ~ ) Typical Applications Wireless Infrastructure RF icrowave & VSAT ilitary & Aerospace Test Instrument ±. ±. ±. Noise Figure..... Input VSWR..... : Output VSWR.. : Output Compression Point (P). m Saturated Output Power (Psat). m Output Third Order Intercept (IP) m Supply Current (Vcc=V) ma Isolation S Weight. ounces Impedance Ohms Input / Output Connectors Finish aterial Package Sealing SA-Female Gold Plated Copper Epoxy Sealing (Standard) Hermetically Sealed (Optional) SA
2 Absolute aximum Ratings Operating Voltage V RF Input Power m Biasing p Procedure Step Connect Ground Pin Step Connect input and output Step Connect V biasing Environmental Specifications and Test Standards Step Step Step Parameter Standard Description Operational Temperature IL-STD- Power OFF Procedure - ~ Storage Temperature - ~ Thermal Shock Random Vibration Electrical & Temperature Burn In Shock Turn off V biasing Remove RF connection Remove Ground. Hour@ - ( Cycles) Acceleration Spectral Density (m/s) Total. RS Temperature for Hours. Weight >g, g half sine wave for ms, Speed variation.m/s. Weight <=g, g Half sine wave for ms, Speed variation.m/s. Total times ( directions, repetitions per direction). Altitude Standard:, Ft (Epoxy Sealed Controlled Environment) Optional: Hermetically Sealed (, ft.. PSI min) Hermetically Sealed (Optional) IL-STD- IL-STD- (For Hermetically Sealed nits) SA
3 Typical Performance Plots (ax) Input Trc SWR / Ref (ax) Output VSWR@ Trc SWR / Ref Trc SWR / Ref Ch Base Freq Start //, : A Ch Base Freq Start Gain@- //, : A Base Pwr - m Output VSWR@- Base Pwr - m.... Ch Base Freq Start Base Pwr - m Stop (ax) Stop - Stop.... Trc S ag / Ref.. S Ch - Base Freq Start Base Pwr - m //, - : P Stop Ch Base Freq Start //, : A Isolation@ Trc S ag / Ref S - - Trc S ag / Ref - S Ch Base Freq Start //, : A Input VSWR@- Ch Base Freq Start Base Pwr - m Isolation@- Base Pwr - m.... Base Pwr - m Trc SWR Trc / Ref SWR / Ref Stop Ch Base Freq Start Ch Base Base Pwr Freq - Start m Base Pwr Stop - m Stop (ax) Stop Stop Stop Ch Base Freq Start Base Pwr - m Stop.... Trc SWR Trc / Ref SWR / Ref Trc S ag / Ref S Ch - Base Freq Start Base Pwr - m Stop //, - : P Stop Ch Base Freq Start Ch Base Base Pwr Freq - m Start Base Pwr Stop - m Stop Ch Base Freq Start Base Pwr - m Stop Trc S S - Ch Base Freq Trc SWR Ch Base Freq Trc SWR / Ref Sales: sales@rflambda.com SA... Technical : support@rflambda.com...
4 OIP(m) Gain() P(m) Ch Base Freq Start Base Pwr - m... - Stop Input VSWR@ Ch Base Freq Start Base Pwr - m Stop Trc SWR Trc / Ref SWR / Ref Trc S a S Trc S ag / Ref S Ch -Base Freq Start Base Pwr - m Stop Ch Base Freq Start Base Ch Base Pwr Freq - Start m Base Pwr Stop - m Stop Ch Base Freq //, - : A Trc SWR.... Output VSWR@ Isolation@ Stop Ch Base Freq Start Base Pwr - m Stop.... Trc SWR / Ref Trc S ag / Ref Trc SWR / Ref S Ch Base Freq Start Base Pwr - m Stop - //, : A Ch Base Freq Start Base Pwr - m Stop Ch Base Freq Start Base Pwr - m Stop Stop Ch Base Freq Start Base Pwr - m Stop Gain vs. Output Power Gain vs. Output Power - Ch Base Freq Start Base Pwr - m //, : A.... Output Power(m).... Stop Trc SWR / Ref P vs. Frequency... P vs. Frequency. Ch Base Freq Start Base Pwr - m.... Stop Frequency() Ch Base Freq Output Third Order Intercept (IP) Noise Figure(-) OIP vs. Frequency Frequency() SA
5 rd Harmonic Wave(c) th Harmonic Wave(c) nd Harmonic Wave(c) Noise Figure(-) nd Harmonic Wave Output Power rd Harmonic Wave Output Power rd Harmonic Wave vs. Output Power - Output Power(m) th Harmonic Wave Output Power nd Harmonic Wave vs. Output Power th Harmonic Wave vs. Output Power Output Power(m) - Output Power(m) SA
6 [.] [.] [.] [.] [.]. [.] [.] Outline Drawing: All Dimensions in mm [inches] -.[.] THR [.] [.] [.] [.] Ordering Information IN -. Tapped hole Part No. ECCN Description GND V RF-Lambda F:.- OT SN:XXXXXXXXX [.] [.] [.] Heat Sink required during operation (Sold Separately) Including Heat Sink IN GND V RF-Lambda F:.- OT SN:XXXXXXXXX [.] [.] EAR.- ltra Wide Band Low Noise Amplifier Important Notice The information contained herein is believed to be reliable. RF-Lambda makes no warranties regarding the information contained herein. RF-Lambda assumes no responsibility or liability whatsoever for any of the information contained herein. RF-Lambda assumes no responsibility or liability whatsoever for the use of the information contained herein. The information contained herein is provided "AS IS, WHERE IS" and with all faults, and the entire risk associated with such information is entirely with the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for RF-Lambda products. The information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. RF-Lambda products are not warranted or authorized for use as critical components in medical, life-saving, or life sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death. SA
RF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
RF-LAMBDA LEADER OF RF BROADBAND SOLTIONS RPNAGGA W Front Over Drive Protected LNA ltra Wide Band Low Noise Amplifier ~ Electrical Specifications, TA = ⁰C, Vcc = V Features Gain: Typical Noise Figure:.
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
LEADER OF RF BROADBAND SOLTIONS Low Noise Amplifier.~. RLNAGG Electrical Specifications, TA = + C, Vcc = +V Features Gain: Typical Noise Figure:. Typical P Output Power: + m Typical Supply Voltage: + V
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
LEADER OF RF BROADBAND SOLTIONS ltra Wide Band Low Noise Amplifier.~ Electrical Specifications, TA = ⁰C, Vcc = V Parameters Min. Typ. Max. Min. Typ. Max. nits Frequency Range... Gain Gain Flatness ±. ±.
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
Wide Band Power Amplifier.~ Electrical Specifications, TA = ⁰C, Vcc = V Features Gain: Typical Noise Figure:. Typical Output P: m Typical Supply Voltage: V Ohm Matched Typical Applications Wireless Infrastructure
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
LEADER OF RF BROADBAND SOLTIONS Wideband Solid State Power Amplifier - Features Gain: typical Output power +m typical High P: + m Full Band Supply Voltage: +V Ohm Matched RFLPAGGA Electrical Specifications,
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
LEADER OF RF BROADBAND SOLTIONS Wideband Low Noise Amplifier.~ RLNAMGB Features Gain: Typical Noise Figure:. Typical Output P: m Typical Supply Voltage: V Ohm Matched Electrical Specifications, TA = ⁰C,
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
Ultra Wide Band Low Noise Amplifier 0.01GHz~10GHz Electrical Specifications, TA = 25, Vcc = 12V Features Gain: 28dB Typical Noise Figure: 2.5dB Typical High P1dB: 15dBm Typical Supply Voltage: 12V Parameter
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
Reflective Coaxial SP2T Switch DC - 6 Electrical Specifications, TA = +25 C, Vcc +5V, TTL= 0 / +5V Description Features Wide Band Operation DC-6 TTL compatible driver included Fast Switching Speed Low
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
LEADER OF RF BROADBAND SOLTIONS Absorptive Coaxial SPST Switch - RFSPSTAG Features Wide Band Operation - TTL compatible driver included Fast Switching Speed Low Insertion Loss and High Isolation Electrical
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
LEADER OF RF BROADBAND SOLTIONS Absorptive Coaxial SP2T Switch.2 ~ Features Wide Band Operation.2- TTL compatible driver included Fast Switching Speed Low Insertion Loss and High Isolation Customization
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
LEADER OF RF BROADBAND SOLTIONS Absorptive Coaxial SP8T Switch. -. RFSP8TAG Electrical Specifications, TA = + C, Vdd = +V/-V, TTL = / +V Description Features ltra Wide Band Operation.-. TTL compatible
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
Absorptive Voltage Controlled Attenuator 4-8GHz Features Wide Band Operation 4-8GHz Wide Attenuation Range 30dB Absorptive Topology Singe Control Operation Electrical Specifications, T A = 25 C Description
More informationIsolation db Input VSWR : 1 Output VSWR : 1 RF Input Power (Pulsed, 10% Duty Cycle, 20us pulse
LEADER OF RF BROADBAND SOLTIONS Reflective Coaxial SP2T Switch.5-6 Electrical Specifications, T A = +25 C, Vdd = +5V, TTL = / +5V Description PN: SP2T Reflective Switch High Power Cold Switching Parameter
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
Absorptive Coaxial SP3T Switch 8-43.5 Electrical Specifications, T A = +25 C, Vdd = +5V/-5V, TTL = 0 / +5V Description PN: SP3T Absorptive Switch Low Power Cold Switching Parameters Min. Typ. Max. Min.
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
Wide Band Power Amplifier 18~45 Features Gain: 35 typical Output power +26m typical High P1: +24 m Full Band Supply Voltage: +12V 50 Ohm Matched Input / Output The photo is only to show the package type.
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
Ultra Wide Band Low Noise Amplifier 0.01GHz~30GHz Electrical Specifications, TA = 25⁰C Features Gain: 36 Typical Noise Figure: 3.5 Typical P1 Output Power: 28m Typical Supply Voltage: AC110V~220V Typical
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
Voltage Control Phase Shifter 2-4GHz Features Wide Band Operation 2-4GHz 360 Phase Shift Low Insertion Loss and Low Phase Error Singe Control Operation Customization available upon request Electrical Specifications,
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
Ultra Wide Band Power Amplifier 0.7GHz ~ 6GHz Features Gain: 35dB typical Output power 38dBm typical High P1dB: 35 dbm Full Band Supply Voltage: 28V 50 Ohm Matched Electrical Specifications, T A = 25⁰C,
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
LEADER OF RF BROADBAND SOLTIONS RVPT88GBC Voltage Control Phase Shifter 8-8 Electrical Specifications, TA = +25 C Description Features Wide Band Operation 8-8 Phase Shift Low Insertion Loss and Low Singe
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
Reflective Coaxial SP2T Switch 50 700MHz Electrical Specifications, TA = +25 C, Vdd = +5V/-28V, TTL = 0 / +5V Description Features Wide Band Operation 50-700MHz TTL compatible driver included Fast Switching
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
Absorptive Coaxial SP3T Switch 0.5-50GHz Electrical Specifications, T A = +25 C, Vdd = +5V/-5V, TTL = 0 / +5V Description PN: SP3T Absorptive Switch Low Power Cold Switching Parameter Min Typ Max Min Typ
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
Electrical Specifications, T A =25 Ultra Wide Band Low Noise Amplifier AC 110V/220V 0.01-20GHz Parameters Min. Typ. Max. Min. Typ. Max. Units Frequency Range 0.01 10 10 20 GHz Gain 28 30 26 28 db Gain
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
100W Coaxial Microwave Power Amplifier 20MHz~520MHz Features Small signal open loop gain: 50dB Output power 100W typical Electrical Specifications, T A = +25 C Typical Applications Suitable for RFI, EMC
More informationUltra Wide Band Low Noise Amplifier GHz. Electrical Specifications, TA = +25⁰C, With Vg= -5V, Vcc = +4V ~ +7V, 50 Ohm System
Ultra Wide Band Low Noise Amplifier 0.5 46GHz Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 0.5 20 20 46 GHz Gain 13 13 db Gain Variation Over Temperature (-45 ~ +85) ±3 ±2 db Noise Figure
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
50W Broadband High Power Amplifier Module 500 2500MHz Electrical Specifications, T A = +25⁰C, Vdd = +28V Features Ultra-broadband Amplifier Module Small and lightweight Supply Voltage: +28V Parameter Min.
More informationParameter Min. Typ. Max. Min. Typ. Max. Units
Electrical Specifications, TA = 25 C, With Vcc = 12V, 50 Ohm System Feature Gain: 36 db Noise Figure: 3.0dB P1dB Output Power: 10dB m full band Supply Voltage: 12V @185mA 50 Ohm Matched Input / Output
More information5W Ultra Wide Band Power Amplifier 2-18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units
7-3 RF-LAMBDA 5W Ultra Wide Band Power Amplifier 2-18GHz Features Wideband Solid State Power Amplifier Psat: + 37dBm Gain: 35 db Supply Voltage: +24V Electrical Specifications, T A = +25⁰C, Vcc = +24V
More information30W Solid State High Power Amplifier 2-6 GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units
7-3 RF-LAMBDA 30W Solid State High Power Amplifier 2-6 GHz Features Wideband Solid State Power Amplifier Psat: +45dBm Gain: 50dB Supply Voltage: +36V Electrical Specifications, T A = +25⁰C, Vcc = +36V
More information8W Wide Band Power Amplifier 1GHz~22GHz
8W Wide Band Power Amplifier 1GHz~22GHz Features Wideband Solid State Power Amplifier Gain: 50 db Typical Psat: +39 dbm Supply Voltage: +36V Electrical Specifications, T A = +25⁰C Typical Applications
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
80W Broadband High Power Amplifier Module 20-1000MHz Electrical Specifications, T A = +25⁰C, VDD = +28V Features Broadband High Power High Efficiency Great Linearity Small Size & Light Weight Low Distortion
More information4W Ultra Wide Band Power Amplifier 0.1GHz~22GHz
4W Ultra Wide Band Power Amplifier 0.1GHz~22GHz Features Wideband Solid State Power Amplifier Gain: 40 db Typical Psat: +37 dbm Typical Noise Figure: 3dB Typical Supply Voltage: +24V (-NP) / +36V (-WP)
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
Ultra Wide Band Low Noise Amplifier AC 1V/2V 0.0~ Electrical Specifications, T A =2 Parameters Min. Typ. Max. Min. Typ. Max. Units Frequency Range 0.01 1 1 3 GHz Gain 33 36 33 36 db Gain Flatness ±1. ±1.0
More information30W Wideband Solid State Power Amplifier 6-12GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units
7-3 RF-LAMBDA 30W Wideband Solid State Power Amplifier 6-12GHz Electrical Specifications, TA = +25⁰C, Vdd = +36V Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range 6 9 10 12 GHz Gain 60 55 db
More informationRF-LAMBDA LEADER OF RF BROADBAND SOLUTIONS
Wide Band High Power Solid State Power Amplifier 2GHz~6GHz Electrical Specifications, TA = +25⁰C, Vcc = +28V Features Gain: 42 db min Output power +47dBm typical High P1dB: +45dB m Full Band Supply Voltage:
More information100W Wide Band Power Amplifier 6GHz~18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz Gain db
100W Wide Band Power Amplifier 6GHz~18GHz Features Wideband Solid State Power Amplifier Psat: +50dBm Gain: 75 db Typical Supply Voltage: +48V On board microprocessor driven bias controller. Electrical
More information20W Solid State Power Amplifier 26.2GHz~34GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units. Frequency Range GHz.
20W Solid State Power Amplifier 26.2GHz~34GHz Features Wideband Solid State Power Amplifier Gain: 65dB Typical Psat: +43dBm Typical Supply : +24V Electrical Specifications, T A = +25⁰C, Vcc = +24V Typical
More informationDC-20 GHz Distributed Driver Amplifier. Parameter Min Typ Max Min Typ Max Units
7-3 RF-LAMBDA DC-20 GHz Distributed Driver Amplifier Electrical Specifications, T A =25 Features Ultra wideband performance Positive gain slope High output power Low noise figure Microwave radio and VSAT
More informationParameter Min. Typ. Max. Units. Frequency Range 8-11 GHz. Saturated Output Power (Psat) 52 dbm. Input Max Power (No Damage) Psat Gain dbm
150W Solid State EMC Benchtop Power Amplifier 8GHz~11GHz Electrical Specifications, T A =25 Features Automatic Calibration Built in Temperature Compensation Adjustable Attenuation: 31.5dB Range, 0.5dB
More information2W Ultra Wide Band Power Amplifier 0.2GHz~35GHz. Parameter Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Units. Frequency Range
2W Ultra Wide Band Power Amplifier 0.2GHz~35GHz Features Wideband Solid State Power Amplifier Gain: 37dB Typical Psat 35dBm Typical Electrical Specifications, TA = +25⁰C, Vcc = +12V. Parameter Min. Typ.
More informationParameter Min Type Max Units Frequency Range GHz Small Signal Gain,S21 18 db. Input Return Loss,S11 10 db Output Return Loss,S22 7 db
High output power >+33dBm Applicable for base station,repeaters of cellular network Aerospace and military application LMDS multi carrier operation High peak to average handle capability High Linearity
More informationParameter Min. Typ. Max. Min. Typ. Max. Units
25W Wide Band Power Amplifier 20-6000MHz Features Wideband Solid State Power Amplifier Psat: +45dBm Typical Gain: 50dB Typical Supply Voltage: +60V DC Electrical Specifications, T A =25 Parameter Min.
More informationRF-LAMBDA. ABSORPTIVE 2-4 GHz 6 Bits 64dB PIN DIODE ATTENUATOR. Absorptive Pin Diode Attenuator 6 Bits 64dB 2-4GHz RFDAT0204G6A.
7 65 6 55 5 5 35 3 25 2 5 5 Frequenc y (GHz) 2- Attenuation Value Insert. Loss 3.dB typ. 3.5dB max. ABSORPTIVE 2- GHz 6 Bits 6dB PIN DIODE ATTENUATOR VSWR Control bits Features Wide Band Operation 2.-.GHz
More information20W Solid State Power Amplifier 6-18GHz. Parameter Min. Typ. Max. Min. Typ. Max. Units
7-3 RF-LAMBDA 20W Solid State Power Amplifier 6-18GHz Electrical Specifications, TA = +25⁰C Vcc = +36V Features Psat: + 43.5dBm Gain: 51 db Supply Voltage: +36V 50 Ohm Matched Short Haul / High Capacity
More information9W Power Amplifier 26.2GHz~34GHz
9W Power Amplifier 26.2GHz~34GHz High output power > +39.5 dbm Aerospace and military application High Peak to average handle capability High Linearity and low noise figure All specifications can be modified
More information100W Power Amplifier 8GHz~11GHz
100W Power Amplifier 8GHz~11GHz High output power +50dBm Aerospace and military application X band radar High Peak to average handle capability All specifications can be modified upon request Parameter
More informationdbm Supply Current (Idd) (Vdd=+36V)
Ka Band 6W Power Amplifier 28GHz~42GHz High output power Aerospace and military application High Peak to average handle capability High Linearity and low noise figure All specifications can be modified
More information150W Solid State Broadband EMC Benchtop Power Amplifier 6-18GHz. Parameter Min Typ Max Min Typ Max Units
7-3 RF-LAMBDA 150W Solid State Broadband EMC Benchtop Power Amplifier 6-18GHz Electrical Specifications, T A =25 Voltage = 110v/220v AC Features High Saturated Output Power 50~52dBm. Telecom Infrastructure
More informationTGA2583-SM 2.7 to 3.7 GHz, 10 W GaN Power Amplifier
Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7 3.7 GHz PSAT:.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db Bias:
More informationTGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier
2 to, W GaN Power Amplifier Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal
More informationTGA2622-CP 9 10 GHz 35 W GaN Power Amplifier
9 1 GHz W GaN Power Amplifier Applications Weather and Marine Radar Product Features Frequency Range: 9 1 GHz PSAT:.5 dbm @ PIN = 18 dbm PAE: >% @ PIN = 18 dbm Power Gain: 27.5 db @ PIN = 18 dbm Bias:
More informationTGA2578-CP 2 to 6 GHz, 30W GaN Power Amplifier
TGA78-CP Applications Electronic Warfare Radar Communications Test Instrumentation EMC Amplifier Product Features Frequency Range: 2 Pout: dbm at PIN = 23 dbm PAE: >% CW Small Signal Gain: > db IM3: -
More informationTGA2813-CP 3.1 to 3.6 GHz, 100W GaN Power Amplifier
Applications Radar Product Features Frequency Range: 3.1 3.6 GHz Pout: 5 dbm (at PIN = 27 dbm) Power Gain: 23 db (at PIN = 27 dbm) PAE: 51 % CW Bias: VD = pulsed (PW = 15 ms, DC = 3 %), IDQ = 3 ma, VG
More informationTGA2814-CP 3.1 to 3.6 GHz, 80W GaN Power Amplifier
Applications Radar Product Features Frequency Range:.1. GHz Pout: 9 dbm at PIN = 7 dbm PAE: 5 % Pulsed Power Gain: db at PIN = 7 dbm Bias: VD = V, IDQ = ma, VG = - V typical, pulsed (PW = 15 ms, DC = %)
More informationQPA GHz 50 Watt GaN Amplifier
QPA1 2.8 3.2 GHz Watt GaN Amplifier Product Description Qorvo s QPA1 is a high-power, S-band amplifier fabricated on Qorvo s QGaN.um GaN on SiC production process. Covering 2.8-3.2 GHz, the QPA1 typically
More informationTQP DC-6 GHz Gain Block
Applications Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram
More informationTGA2214-CP 2 18 GHz 4 W GaN Power Amplifier
Product Description Qorvo s TGA2214-CP is a packaged wideband power amplifier fabricated on Qorvo s QGaN15 0.15 µm GaN on SiC process. Operating from 2 to 18 GHz, the TGA2214- CP generates > 4 W saturated
More informationQPA GHz 50 Watt GaN Amplifier
QPA1 2.8 3.2 GHz Watt GaN Amplifier Product Description Qorvo s QPA1 is a high-power, S-band amplifier fabricated on Qorvo s QGaN.um GaN on SiC production process. Covering 2.8-3.2 GHz, the QPA1 typically
More informationFeatures. = +25 C, +Vdc = +6V, -Vdc = -5V
v3.7 WIDEBAND LNA MODULE, - 2 GHz amplifiers Typical Applications The Wideband LNA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Industrial Sensors Functional
More informationTGA2625-CP GHz 20 W GaN Power Amplifier
Product Description Qorvo s is a packaged high-power X-Band amplifier fabricated on Qorvo s QGaN25 0.25 um GaN on SiC process. Operating from 10 to 11 GHz, the TGA2625- CP achieves 42.5 dbm saturated output
More informationTGM2543-SM 4-20 GHz Limiter/LNA
TGM243-SM Applications Receiver front end building block Product Features QFN 7x7mm 22L Frequency Range: 4-2 GHz Input Power CW Survivability: 4 W Functional Block Diagram Gain: 17 db Noise Figure: 2 db
More informationFeatures. The HMC-C072 is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT. = +25 C, Vdc = +7V
amplifiers Typical Applications The is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT Functional Diagram Features Ultra Low Phase Noise: -67 dbc/hz @ khz Noise Figure: 4.5 db Gain:
More informationTGA2583-SM 2.7 to 3.7GHz, 10W GaN Power Amplifier
Applications Commercial and Military Radar QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 2.7-3.7 GHz P SAT :.5 dbm PAE: > 50 % Small Signal Gain: 33 db Return Loss: > 12 db
More informationFeatures. Gain Variation Over Temperature db/ C
HMC-C26 Features Typical Applications The HMC-C26 Wideband PA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram Gain: 3 db
More informationTGA2567-SM 2 20 GHz LNA Amplifier
Product Description Qorvo s is a LNA Gain Block fabricated on Qorvo s proven.um phemt production process. The operates from 2 to 2 GHz and typically provides 19 dbm of 1dB compressed output power with
More informationAVP TO 2600 MHz, 15 WATTS HIGH POWER GaNPak B AMPLIFIER AVP2524 SPECIFICATIONS * INTERMODULATION PERFORMANCE ABSOLUTE MAXIMUM RATINGS AVP2524
Rev. 5/1 6 TO 26 MHz, 15 WATTS HIGH POWER GaNPak B AMPLIFIER Typical Values Broadband....................................... High Gain....................................... High Saturated Power, Psat.........................
More informationQPA GHz Variable Gain Driver Amplifier
QPA8 Product Description Qorvo's QPA8 is an S-band two stage variable gain driver amplifier in a 5x5 mm QFN. The QPA8 operates from 2.7 to 3.8 GHz and provides 31dBm of P1dB output power with 26 db of
More informationTAT7457-EB. CATV 75 Ω phemt Adjustable Gain RF Amplifier. Applications. Ordering Information
Applications Single-ended and Push-pull Optical Receivers Low-noise Drop Amplifiers Distribution Amplifiers Multi-Dwelling Units Single-ended Gain Block SOT-89 package Product Features Functional Block
More informationFeatures. = +25 C, +Vdc = +6V, -Vdc = -5V
HMC-C59 v.59 WIDEBAND LNA MODULE, - 2 GHz Typical Applications The HMC-C59 Wideband LNA is ideal for: Telecom Infrastructure Features Noise Figure:.8 db @ 8 GHz High Gain: 6 db @ 8 GHz PdB Output Power:
More informationTGM2635-CP X-Band 100 W GaN Power Amplifier
Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of
More informationWJA V Active-Bias InGaP HBT Gain Block
Applications IF Amplifier VHF/UHF Transmission Wireless Infrastructure CATV / SATV / MoCA General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram 50 Ohm Cascadable Gain Block
More informationTQP PCB. DC-6 GHz Gain Block. Applications. Ordering Information
Applications Mobile Infrastructure LTE / WCDMA / CDMA CATV Point to Point General Purpose Wireless Product Features Cascadable Gain Block DC 6000 MHz 19.1 db Gain @ 1.9 GHz 4.7 db Noise Figure @ 1.9 GHz
More informationTGM2635-CP X-Band 100 W GaN Power Amplifier
Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of
More informationTGA4533-SM K-Band Power Amplifier
Applications Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm L Product Features Functional Block Diagram Frequency Range: 21.2 23.6 GHz Power: dbm Psat, 31 dbm P1dB Gain: 22 db TOI: 41 dbm at 21 dbm SCL
More informationECG055B-G InGaP HBT Gain Block
Applications Wireless Infrastructure CATV / SATV / MoCA Point to Point Defense & Aerospace Test & Measurement Equipment General Purpose Wireless Product Features SOT-89 Package Style Functional Block Diagram
More informationFeatures. = +25 C, Vdc = +7V
amplifiers Typical Applications The is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT Functional Diagram Features Ultra Low Phase Noise: -7 dbc/hz @ khz Noise Figure: 6 db Gain:
More informationQPA1003P 1 8 GHz 10 W GaN Power Amplifier
QPA13P 1 8 GHz 1 W GaN Power Amplifier Product Description Qorvo s QPA13P is a wideband high power MMIC amplifier fabricated on Qorvo s production.um GaN on SiC process (QGaN). The QPA13P operates from
More informationTQP3M9008 High Linearity LNA Gain Block
General Description The is a cascadable, high linearity gain block amplifier in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 2.6 db gain, +36 dbm OIP3, and 1.3 db Noise
More informationTGA2818-SM S-Band 30 W GaN Power Amplifier
S-Band 3 W GaN Power Amplifier Applications Military Radar Civilian Radar Wideband Amplifiers Product Features Functional Block Diagram Frequency Range: 2.8-3.7 GHz Pout: >.5 dbm (Pin=27 dbm) Large Signal
More informationQPC GHz 50 W GaN SPDT Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
.15 2.8 GHz 5 W GaN SPDT Switch Product Overview Qorvo s is a Single-Pole, Double Throw (SPDT) switch fabricated on Qorvo s QGaN25.25um GaN on SiC production process. Operating from.15 to 2.8 GHz, the
More informationTGA2594-HM GHz GaN Power. Product Description. Product Features. Functional Block Diagram. Applications. Ordering Information
TGA94-HM Product Description Qorvo s TGA94-HM is a packaged power amplifier fabricated on Qorvo s. um GaN on SiC process (QGaN). Operating from 27 to 31 GHz, the TGA94- HM achieves 36.5 dbm saturated output
More informationTQP DC-6 GHz Gain Block
Applications Mobile Infrastructure LTE / WCDMA / CDMA / EDGE CATV Point to Point General Purpose Wireless SOT-89 Package Product Features Functional Block Diagram DC-6000 MHz 15.4 db Gain @ 1.9 GHz 4 3.6
More informationFeatures. = +25 C, Vdc = +5V
amplifiers Typical Applications The HMC-C is ideal for: Microwave Radio Military & Space Test Instrumentation VSAT Functional Diagram v.7 HMC-C Features Ultra Low Phase Noise: -6 dbc/hz @ khz Noise Figure:
More informationQPC1006EVB GHz High Power GaN SP3T Switch. Product Overview. Key Features. Functional Block Diagram. Applications. Ordering Information
0.15 2.8 GHz High Power GaN SP3T Switch Product Overview Qorvo s is a Single-Pole, Triple Throw (SP3T) switch fabricated on Qorvo s QGaN25 5um GaN on SiC production process. Operating from 0.15 to 2.8
More informationTGP2105-SM 6-18 GHz 6-Bit Digital Phase Shifter (+Vc)
Applications Phased Array Antenna Systems Satellite Communication Systems Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 6 to 18 GHz 6-Bit Digital Phase Shifter
More informationTGV2561-SM GHz VCO with Divide by 2
GND RFout / 2 Vtune TGV2561-SM Applications Point to Point Radio / VSAT Millimeter-wave Communications Test Equipment 32-pin 5x5mm package Product Features Functional Block Diagram Frequency range: 8.9
More informationQPD W, 48 V GHz GaN RF Power Transistor. Product Description. Product Features. Functional Block Diagram.
Product Description The is a discrete GaN on SiC HEMT which operates from 3.4 3.8 GHz. The device is a single stage matched power amplifier transistor. The can be used in Doherty architecture for the final
More informationApplications Ordering Information
Applications Repeaters Mobile Infrastructure Defense/Aerospace LTE / WCDMA / EDGE / CDMA General Purpose Wireless IF amplifier, RF driver amplifier Product Features 5-4 MHz Flat gain (14.7 ±.3 db) from.5
More informationTQP3M9008 High Linearity LNA Gain Block
Applications Repeaters Mobile Infrastructure LTE / WCDMA / EDGE / CDMA General Purpose Wireless 3-pin SOT-89 Package Product Features Functional Block Diagram 5-4 MHz 2 db Gain @ 1.9 GHz +35.5 dbm Output
More informationTGP2107-SM 6 to 18 GHz 6-Bit Digital Phase Shifter ( V C )
TGP217-SM Applications Phased Array Antenna Systems Satellite Communication Systems Electronic Warfare QFN 5x5 mm 32L Product Features Functional Block Diagram Frequency Range: 6 to 18 GHz 6-Bit Digital
More informationQPC GHz Phase Shifter with Integrated SPDT
QPC1 Product Description Qorvo s QPC1 integrates a 5-bit digital phase shifter and a SPDT switch inside a small 6x5mm surface mount package. Individually, the Qorvo products include the TGP21 phase shifter
More informationTGA2760-SM-T/R GHz Power Amplifier. Product Overview. Key Features. Applications. Functional Block Diagram. Ordering Information
Product Overview Qorvo s is a packaged X-band high power amplifier utilizing Qorvo s production GaAs phemt and GaN processes. The operates from 11.7GHz and typically provides 16W saturated power with power-added
More informationTQP7M W High Linearity Amplifier. Applications. Ordering Information
Applications Repeaters BTS Transceivers BTS High Power Amplifiers CDMA / WCDMA / LTE General Purpose Wireless 3-pin SOT-89 Package Product Features 5-15 MHz +3 dbm P1dB at 94MHz +49 dbm Output IP3 at 94MHz
More informationTQP3M9028 High Linearity LNA Gain Block
General Description The is a cascadable, high linearity gain block amplifier in a low-cost surface-mount package. At 1.9 GHz, the amplifier typically provides 14.7 db gain, + dbm OIP3, and 1.8 db Noise
More informationQPD W, 48 V GHz GaN RF Power Transistor
Applications W-CDMA / LTE Macrocell Base Station, Band 1 and Band 3 Active Antenna General Purpose Applications 2 Lead NI400 Package Product Features Functional Block Diagram Operating Frequency Range:
More informationTGL2201-SM T/R. Wideband Dual Stage VPIN Limiter. Applications. Ordering Information. Part No. ECCN Description
Applications LNA Receiver Chain Protection Military Radar Product Features 2-12 GHz Passive, High Isolation Limiter Low Loss < 1.0 db, X-band Return Loss > 10 db Flat Leakage < 18 dbm Input Power CW Survivability
More informationML485-G. Applications. Functional Block Diagram. Product Features. General Description. Pin Configuration. Ordering Information
RFMD + TriQuint = Qorvo ML 1.-3.2 GHz High IP3 Mixer with Integrated LO Amp Applications PCS / 3G Base station / Repeaters WCDMA / LTE WiMax / WiBro ISM / Fixed Wireless HPA Feedback Paths Product Features
More informationTQQ7399 DC 2700 MHz Through Line
Applications General Purpose Wireless RF Bypass Paths Microwave Radio Test & Measurement Scientific Instruments Product Features 6 Pin 3 x 3 mm leadless SMT Package Functional Block Diagram DC 2700 MHz
More informationTGS SM GHz High Power SPDT Reflective Switch
- 18 GHz High Power SPDT Reflective Switch Product Overview Qorvo s is a single-pole, double-throw (SPDT) reflective switch packaged in a 4x4mm ceramic, air-cavity QFN. Fabricated on Qorvo s QGaN25 0.25um
More informationTGL2767-SM-EVB. 2 31GHz Voltage Variable Attenuator. Product Description. Product Features. Applications Block Diagram. Ordering Information
Product Description The TGL2767 SM is a packaged wideband voltagevariable attenuator using Qorvo's production.15um GaAs phemt process (QPHT15). Operating from 2 31 GHz, the TGL2767 SM offers > 2 db of
More informationTQP3M9035 High Linearity LNA Gain Block
Applications Repeaters Mobile Infrastructure LTE / WCDMA / CDMA / GSM General Purpose Wireless TDD or FDD systems Product Features 2x2mm 8-lead DFN plastic package Functional Block Diagram 5-4 MHz.66 db
More information